HIGH TEMPERATURE NEGATIVE TEMPERATURE COEFFICIENT THERMISTOR MATERIAL AND PREPARATION METHOD THEREOF

Abstract

A composite thermistor material, a preparation method and an application thereof. The perovskite structure oxide and the pyrochlorite structure oxide are composite by solid state reaction method, which comprise process of ball milling, drying, and calcining. Then the thermistor ceramics with high temperature resistance and controllable B value are sintered at high temperature after mould forming, then the thermistor disks are coated by platinum paste, and then the platinum wire is welded as the lead wire to form thermistor element. The thermistor of the invention can realize temperature measurement from room temperature to 1000° C. and has good negative temperature coefficient thermistor characteristics. The thermistor coefficient B can be adjusted by changing the two-phase ratio to meet the requirements of different systems.

Description

BACKGROUND OF THE PRESENT INVENTION

Field of the Present Invention

The invention belongs to the field of temperature sensing technique, more particularly relates to a composite thermal thermistor material and a preparation method thereof, in which the prepared thermal thermistor material can be used for a temperature sensing technique.

Description of the Related Art

The negative temperature coefficient (NTC) thermistor is widely used in different kinds of circuit system as a compensate device, whose resistance decrease with the temperature rising up. Compare with the traditional temperature sensing element such as thermocouple, thermal resistance, the main characteristic of NTC thermistor is their high sensibility and low cost. The high temperature NTC thermistor is more stable than normal NTC thermistor, so it can be used for temperature of 1000° C., which makes it a better choice as temperature sensing element in high temperature automobile applications.

The main parameters of NTC is the resistivity and their negative temperature coefficient B, which was used to evaluate the relation between resistivity and temperature. In order to realize the temperature detection range from 0° C. to 1000° C., it is important for the NTC thermistor to simultaneously possess high resistivity and low B value. However, too high B value will lead to less resistivity in high temperature but too low B value will influence the sensitivity. Usually, the range of B value for high temperature NTC is 2000˜4000, and it is difficult to tune the B value for a given system. Thus, there is urgent need to develop a method to tune the B value for NTC materials.

SUMMARY OF THE PRESENT INVENTION

In view of the above-described problems, the present invention provides a composite NTC material and a preparation method thereof, which can achieve the tunable B value to fabricate high temperature NTC thermistor by synthesis two different kinds of materials. Meanwhile, the NTC thermistor can effectively used with B value from 2000˜4000, with the good performance of long-term stability and NTC effect.

In order to achieve the above objective, according to an aspect of the present invention, there is provided a composite NTC thermistor material, wherein the NTC thermistor material is formed by oxides of pyrochlorite and perovskite. The ratio of two materials is (70:30)˜(90:10), the main elements in oxide of pyrochlorite are calcium, titanium, tungsten and cerium. Correspondingly, the main elements in oxide of perovskite is yttrium, manganese and chromium.

Further, the perovskite oxide and the pyrochlorite oxide are YCr_0.5Mn_0.5O₃ and CaWO₄—CeTi₂O₆, respectively.

Further, the molar ratio of yttrium manganese and chromium in the perovskite structure oxide is (2˜2.5):(0.8˜1.2):(0.8˜1.2). The molar ratio of calcium, titanium, tungsten and cerium in the calcined chlorite oxide is (0.8˜1.2):(0.8˜1.2):(0.8˜1.2):(2˜2.5).

For example, the molar ratio of yttrium manganese and chromium in perovskite oxides is 2:1:1, and the molar mass ratio of calcium, titanium, tungsten and cerium in the calcined chlorite oxide is 1:1:1:2. The optimum resistivity and B value of the prepared composite thermistors can be achieved by using the molar mass ratio. The properties of the prepared composite thermistors are superior.

According to another aspect of the present invention, there is provided a preparation method of a composite NTC material, comprising:

(1) The analytical pure Y₂O₃, Mn₂O₃ and Cr₂O₃ are mixed grinding, and the molar ratio of the three is 2:1:1, then calcined the mixture at 1200° C. for 1-2 hours to obtain the YCr_0.5Mn_0.5O₃ oxide powder;(2) The analytical pure CaCO₃, CeO₂, TiO₂ and WO₃ were mixed to grind, and the molar ratio of the four was 2:2:2:1, and then calcined the dried powder at 1000° C. for 3 h to obtain the CaWO₄—CeTi₂O₆ oxide powder;(3) The perovskite oxide YCr_0.5Mn_0.5O₃ powder was prepared and the PVA binder was added to the perovskite oxide powder to disperse the perovskite oxide powder evenly, and the uniformly dispersed particles were sintered directly at 1400-1600° C. for 1-2 h.(4) Taking step (3) perovskite oxide YCr_0.5Mn_0.5O₃ powder after sintering, and preparing calcined chlorite oxide CaWO₄—CeTi₂O₆ powder in step (2), grinding them uniformly for 4-8 h. The molar ratio of perovskite oxide YCr_0.5Mn_0.5O₃ powder to calcined chlorite oxide CaWO₄—CeTi₂O₆ powder is (70:30)˜(90:10);(5) Mixing and grinding the uniform powder in step (4) and adding the PVA binder to form the uniformly dispersed granular particles again, and then forming the uniformly dispersed particles into a wafer after the mold molding;(6) The formed wafer is sintered at 1400° C. to form a B value adjustable thermistor material;(7) The platinum paste is coated on the surface of the sintered thermistor material in step (6) and then kept at 1200° C. for 2 h;(8) The thermistor material obtained in step (7) is cut according to the requirement, and the platinum lead is welded to the cut thermistor chip.

The invention also discloses an application of a composite thermistor material. The composite thermistor material is used to prepare a composite thermistor. The platinum wire was bonded to the two ends of the thermistor chip after cutting, and the high temperature thermistor with lead was formed after high temperature treatment at 1200° C.

The invention also discloses an application of a composite thermistor material. The composite thermistor material is used to prepare a high temperature dense ceramic thermistor temperature sensor.

Beneficial effect: the composite thermistor material in the invention, according to the ratio of its composite material, the obtained thermistor coefficient B value is different, which can be adjusted by the B value of 2000-4000 to meet the requirements of different industrial production. The invention can be widely used in the field of automobile exhaust gas measurement and various temperature measurement, and is a low price and stable thermistor material.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram of the resistance and temperature characteristic curve in embodiment 1;

FIG. 2 is a schematic diagram of the resistance and temperature characteristic curve in embodiment 1;

FIG. 3 is a schematic diagram of the resistance and temperature characteristic curve in embodiment 1;

FIG. 4 is a schematic diagram of the resistance and temperature characteristic curve in embodiment 1;

DETAILED DESCRIPTION OF THE EMBODIMENTS

For clear understanding of the objectives, features and advantages of the present invention, detailed description of the present invention will be given below in conjunction with accompanying drawings and specific embodiments. It should be noted that the embodiments described herein are only meant to explain the present invention, and not to limit the scope of the present invention.

The composite NTC thermistor material in the present invention is formed by perovskite structure oxide and pyrochlorite structure oxide. The molar ratio of the two materials is (70:30)˜(90:10), and the perovskite structure oxide contains yttrium, manganese and chromium. The pyrochlorite oxide containing calcium, titanium, tungsten and cerium. Among them, perovskite oxide and pyrochlorite oxide are YCr_0.5Mn_0.5O₃ and CaWO₄—CeTi₂O₆, respectively. The molar ratio of yttrium, manganese and chromium in perovskite oxide is 2:1:1, and the molar ratio of calcium, titanium, tungsten and cerium in calcined chlorite oxide is 1:1:1:2. The composite NTC thermistor material can be prepared according the following steps:

(1) The analytical pure Y₂O₃, Mn₂O₃ and Cr₂O₃ are mixed grinding, and the molar ratio of the three is 2:1:1, then calcined the mixture at 1200° C. for 1-2 hours to obtain the YCr_0.5Mn_0.5O₃ oxide powder;(2) The analytical pure CaCO₃, CeO₂, TiO₂ and WO₃ were mixed to grind, and the molar ratio of the four was 2:2:2:1, and then calcined the dried powder at 1000° C. for 3 h to obtain the CaWO₄—CeTi₂O₆ oxide powder;(3) The perovskite oxide YCr_0.5Mn_0.5O₃ powder was prepared and the PVA binder was added to the perovskite oxide powder to disperse the perovskite oxide powder evenly, and the uniformly dispersed particles were sintered directly at 1400-1600° C. for 1-2 h.(4) Taking step (3) perovskite oxide YCr_0.5Mn_0.5O₃ powder after sintering, and preparing calcined chlorite oxide CaWO₄—CeTi₂O₆ powder in step (2), grinding them uniformly for 4-8 h. The molar ratio of perovskite oxide YCr_0.5Mn_0.5O₃ powder to calcined chlorite oxide CaWO₄—CeTi₂O₆ powder is (70:30)˜(90:10);(5) Mixing and grinding the uniform powder in step (4) and adding the PVA binder to form the uniformly dispersed granular particles again, and then forming the uniformly dispersed particles into a wafer after the mold molding;(6) The formed wafer is sintered at 1400° C. to form a B value adjustable thermistor material;(7) The platinum paste is coated on the surface of the sintered thermistor material in step (6) and then kept at 1200° C. for 2 h;(8) The thermistor material obtained in step (7) is cut according to the requirement, and the platinum lead is welded to the cut thermistor chip.

The composite thermistor material is used to prepare a composite thermistor. The platinum wire was bonded to the two ends of the thermistor chip after cutting, and the high temperature thermistor with lead was formed after high temperature treatment at 1200° C.

The composite thermistor material can also be used to fabricate high temperature dense ceramic thermistor temperature sensor.

Embodiment 1

A, preparing the composite NTC thermistor material, which specifically includes the following steps:

a, the prepared perovskite oxide YCr_0.5Mn_0.5O₃, and PVA binder are added to disperse the raw powder into granular form, then the uniformly dispersed powder is sintered at 1400-1600° C. for 1-2 h;

b, after sintering, perovskite oxide YCr_0.5Mn_0.5O₃ powder was obtained and mixed with the prepared CaWO₄—CeTi₂O₆ powder for 4-8 h at the molar ratio of 70:30;

c, the uniform powder was added to the binder to form the granular uniform dispersed powder again, and then formed the disk after the mould forming;

d, the formed disk was sintered at 1400-1500 temperature to form a B value adjustable thermistor material;

e, the platinum paste was coated on the surface of the sintered thermistor material and kept for 2 h at 1200° C.;

f, the platinum coated thermistor material is cut according to the requirement, and the platinum lead is welded to the cut thermistor chip;

g, the resistivity at room temperature (25° C.) is 2540 (k Ω*cm), the resistivity at high temperature (900° C.) 0.0076 (k Ω*cm), B value (25-200) is 4378, B value (200-800) is 4797, the temperature resistance curve is shown in FIG. 1;

Embodiment 2

B, preparing the composite NTC thermistor material, which specifically includes the following steps:

a, the prepared perovskite oxide YCr_0.5Mn_0.5O₃, and PVA binder are added to disperse the raw powder into granular form, then the uniformly dispersed powder is sintered at 1400-1600° C. for 1-2 h;

b, after sintering, perovskite oxide YCr_0.5Mn_0.5O₃ powder was obtained and mixed with the prepared CaWO₄—CeTi₂O₆ powder for 4-8 h at the molar ratio of 80:20;

c, the uniform powder was added to the binder to form the granular uniform dispersed powder again, and then formed the disk after the mould forming;

d, the formed disk was sintered at 1400-1500 temperature to form a B value adjustable thermistor material;

e, the platinum paste was coated on the surface of the sintered thermistor material and kept for 2 h at 1200° C.;

f, the platinum coated thermistor material is cut according to the requirement, and the platinum lead is welded to the cut thermistor chip;

g, the resistivity at room temperature (25° C.) is 151.62 (k Ω*cm), the resistivity at high temperature (900° C.) 0.0048 (k Ω*cm), B value (25-200) is 3798, B value (200-800) is 4370, the temperature resistance curve is shown in FIG. 2;

Embodiment 3

C, preparing the composite NTC thermistor material, which specifically includes the following steps:

a, the prepared perovskite oxide YCr_0.5Mn_0.5O₃, and PVA binder are added to disperse the raw powder into granular form, then the uniformly dispersed powder is sintered at 1400-1600° C. for 1-2 h;

b, after sintering, perovskite oxide YCr_0.5Mn_0.5O₃ powder was obtained and mixed with the prepared CaWO₄—CeTi₂O₆ powder for 4-8 h at the molar ratio of 90:10;

c, the uniform powder was added to the binder to form the granular uniform dispersed powder again, and then formed the disk after the mould forming;

d, the formed disk was sintered at 1400-1500 temperature to form a B value adjustable thermistor material;

e, the platinum paste was coated on the surface of the sintered thermistor material and kept for 2 h at 1200° C.;

f, the platinum coated thermistor material is cut according to the requirement, and the platinum lead is welded to the cut thermistor chip;

g, the resistivity at room temperature (25° C.) is 30 (k Ω*cm), the resistivity at high temperature (900° C.) 0.0022 (k Ω*cm), B value (25-200) is 3263, B value (200-800) is 4135, the temperature resistance curve is shown in FIG. 3;

Embodiment 4

D, preparing the composite NTC thermistor material, which specifically includes the following steps:

a, the analytical pure Y₂O₃ Mn₂O₃ Cr₂O₃ was mixed with the molar ratio of 2:1:1 and then calcined at 1200° C. for 1-2 h to obtain the YCr_0.5Mn_0.5O₃ oxide powder.

b, the powder obtained in step a is dried and added with binder to disperse the particles evenly, and the disk is formed by mould forming process.

d, the formed disk was sintered at 1400-1500 temperature to form a thermistor material;

e, the platinum paste was coated on the surface of the sintered thermistor material and kept for 2 h at 1200° C.;

f, the platinum coated thermistor material is cut according to the requirement, and the platinum lead is welded to the cut thermistor chip;

g, the resistivity at room temperature (25° C.) is 21.54 (k Ω*cm), the resistivity at high temperature (800° C.) 0.01864 (k Ω*cm), B value (25-200) is 2881, B value (200-800) is 3083, the temperature resistance curve is shown in FIG. 4.

Claims

1. A composite thermistor material, which is characterized by comprising a perovskite structure oxide and a pyrochlorite structure oxide, wherein the molar ratio of the two phase is (70:30) to (90:10). The perovskite oxides contain yttrium, manganese and chromium, pyrochlorite oxides contain calcium, titanium, tungsten and cerium.

2. The composite thermistor material according to claim 1, wherein the perovskite oxide and the pyrochlorite oxide are YCr0.5Mn0.5O3 and CaWO4—CeTi2O6, respectively.

3. The composite thermistor material according to claim 1, wherein the molar mass ratio of yttrium, manganese, chromium in the perovskite structure oxide is (2-2.5):(0.8-1.2):(0.8-1.2), and the molar mass ratio of calcium, titanium, tungsten, cerium in the pyrochlorite oxide is (0.8-1.2):(0.8-1.2):(0.8˜1.2):(2˜2.5).

4. The composite thermistor material according to claim 3, wherein the molar mass ratio of yttrium, manganese, chromium in the perovskite structure oxide is 2:1:1, and the molar mass ratio of the calcium, titanium, tungsten, cerium in the pyrochlorite oxide is 1:1:1:2.

5. The method for preparing a composite thermistor material according to claim 1, comprising the steps of: (1) mixing and grinding pure Y2O3, Mn2O3 and Cr2O3, and the molar mass ratio of the three is 2:1:1; and then sintering the ground mixture at the temperature of 1100-1300° C. for 1-2 hours to obtain the YCr0.5Mn0.5O3 oxide powder;(2) the pure CaCO3, CeO2, TiO2 and WO3 are mixed and ground, and the molar mass ratio between the four is 2:2:2:1; then grinding and drying the powder to obtain the CaWO4—CeTi2O6 oxide powder at the temperature of 950° C.-1050° C. for 3 h to obtain the CaWO4—CeTi2O6 oxide powder;(3) weighing all the prepared perovskite oxide YCr0.5Mn0.5O3 powder in the step (1), and adding a PVA adhesive to make the perovskite oxide powder form a granular uniform dispersion, sintering the uniformly dispersed powders at the temperature of 1400-1600° C. for 1-2 h;(4) weighing the perovskite oxide YCr0.5Mn0.5O3 powder after the step (3) is sintered, and the prepared green-green-stone oxide CaWO4—CeTi2O6 powder prepared in the step (2), and the mixture is ground for 4-8 h to make the powder uniform. The molar ratio of the perovskite oxide YCr0.5Mn0.5O3 powder to the sintered green stone oxide CaWO4—CeTi2O6 powder is (70:30) to (90:10).(5) adding the uniformly mixed powder in the step (4) into the PVA adhesive so as to form the granular uniformly dispersed powders again, and then the uniformly dispersed particles are formed into a disk after being formed by a mould;(6) sintering the formed circular sheet at temperature of 1400° C. to form a tunable B value thermistor material;(7) coating the platinum paste on the surface of the sintered thermistor material in step (6), and then keeping the temperature for 2 h at the temperature of 1200° C.;(8) cutting the thermistor material obtained in the step (7) according to the requirement, and welding the platinum wire lead to the cut thermistor chip.

6. The method for preparing the composite thermistor material according to claim 5, wherein in the step (3), the perovskite oxide YCr0.5Mn0.5O3 powder directly sintered under 1400˜1500° C. after adding PVA.

7. The application of the composite thermistor material according to claim 1, characterized in that the composite thermistor material is used for preparing a composite thermistor, and the platinum wire is bonded on the two ends of the thermistor chip after the cutting treatment, and the high-temperature thermistor with the lead is formed after the high-temperature treatment at the temperature of 1200° C.

8. The application of the composite thermistor material according to claim 1, characterized in that the composite thermistor material is used for preparing a high-temperature dense ceramic thermistor temperature sensor.