Claims
- 1. A high temperature piezoelectric sensor device comprisingfirst and second electrodes; a first insulator having first and second surfaces; a pressure component engaging at least said first surface of said first insulator, wherein said second surface of said first insulator engages said first electrode, and said pressure component is coupled to said second electrode; a second insulator extending substantially perpendicular from said second electrode; and a piezoelectric film separating said first and said second electrode, wherein said piezoelectric film is deposited using chemical vapor deposition, wherein said piezoelectric sensor is operable up to a temperature of about 1200° C.
- 2. A device as claimed in claim 1 wherein said piezoelectric film is aluminum nitride.
- 3. A device as claimed in claim 1 wherein said pressure component is a pressure body having a plug engaging said first surface of said first insulator, wherein said plug is accommodated in a cavity of said pressure body.
- 4. A device as claimed in claim 1 wherein said pressure component expands over said first insulator and includes a pressure plate portion that is slidably mounted between said second insulator and said second electrode.
- 5. A device as claimed in claim 1 wherein said first electrode, is a substrate selected from the group consisting of carbide and titanium.
- 6. A device as claimed in claim 1 wherein said sensor is adapted to provide a measurement selected from the group consisting of force, pressure and acceleration.
- 7. A device as claimed in claim 1 wherein said second electrode is a forging die body.
- 8. A device as claimed in claim 1 wherein said pressure component is a pressure plate.
- 9. A device as claimed in claim 1 wherein said pressure component is a mass member, wherein said first insulator, said first electrode and said piezoelectric film form a cavity, and said mass member ii coupled to said second electrode through said cavity.
- 10. A device as claimed in claim 9 wherein said second electrode forms a protective housing for said first insulator, said first electrode, said piezoelectric film and said mass member.
- 11. A device as claimed in claim 10 wherein said second insulator is a connector insulatively couple to second electrode and electrically couple to said first electrode.
- 12. A high temperature piezoelectric sensor device comprising:first and second electrodes; a piezoelectric film starting said first and second electrodes first and second insulator plates, said first insulator being coupled to said first electrode, a housing coupled between said first and second insulator plates; and a mass member having exterior and interior portions, said housing enclosing said interior portion of said mass member and said second insulator plate member, wherein said first and second insulator plates, said first and second electrodes, said piezoelectric film, and said housing define a cavity, and said exterior portion of said mass member is coupled to said second electrode through said cavity.
- 13. A device as claimed in claim 12 further comprising a connector insulatively coupled to said housing, wherein said mass member is grounded to said connector and said first electrode is electrically couple to said connector through said first and second insulator plates.
- 14. A high temperature piezoelectric sensor suitable for use in a control circuit comprising:a sensor; a charge amplifier that is electronically coupled to said sensor; and a microelectronic device that is electronically coupled to said charge amplifier; wherein said sensor comprises: first and second electrodes; a first insulator having first and second surfaces; a pressure component engaging at leant said first surface of said first insulator, wherein said second surface of said first insulator engages said first electrode, and said pressure component is coupled to said second electrode; a second insulator extending substantially perpendicular from said second electrode; and a piezoelectric film separating said first and said second electrode, wherein said piezoelectric film is deposited using chemical vapor deposition, wherein said piezoelectric sensor is operable up to a temperature of about 1200° C.
- 15. A sensor suitable for use in a control circuit as claimed in claim 14, wherein said control circuit provides a measurement selected from the group consisting of pressure, force, and acceleration.
- 16. A high temperature piezoelectric sensor suited for measuring force comprising:a first electrode having a first side and a second side; a piezoelectric aluminum nitride film provided to said second aids of said first electrode; a second electrode having a first side and a second side, wherein said piezoelectric aluminum nitride film is coupled to said second side of said second electrode; an insulating plate provided to said first side of said first electrode; an insulator provided to said second side of said second electrode said insulator protrudes from said second electrode in a manner that cause said insulator to fit perpendicularly against said first electrode and said piezoelectric aluminum nitride film; a top pressure plate coupled to said insulating plate, said top pressure plate expands over said insulating plate and slidably mounts between said insulator and said second electrode; a connector, a first wire connecting said first electrode to said connector, and a jumper wire connecting said second electrode to said pressure plate.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application claims the benefit of U.S. Provisional Application Ser. No. 60/232,484, filed Sep. 13, 2000.
FEDERAL RESEARCH STATEMENT
This invention was made with government support under Contract No. F33615-98-C-5217 awarded by the Department of the Air Force. The Government has certain rights in this invention. The invention described herein may be manufactured and used by or for the Government of the United States for all governmental purposes without the payment of any royalty.
US Referenced Citations (19)
Non-Patent Literature Citations (1)
Entry |
L. Zheng et al: “Aluminum Nitride Thin Film Sensor for Force, Acceleration and Acoustic Emission Sensing” Journal of Vacuum Science and Technology: Part A, vol. 11, No. 5, Sep. 1993-Oct. 1993, pp. 2437-2446. |
Provisional Applications (1)
|
Number |
Date |
Country |
|
60/232484 |
Sep 2000 |
US |