Claims
- 1. High-voltage direct current cable semiconductive shield comprising:
a blend of or which is made from a blend of
(a) at least one ethylene copolymer having a density of less than about 0.900 grams/cubic centimeter, a melt index of from about 0.5 to about 10 grams/10 minutes, a crystallinity of less than about 10 percent and a catalyst residue of less than about 1000 ppm; (b) a carbon black having a low level of ionic species; (c) at least one polar polymer modifier in an amount effective to provide a semiconductive shield made with the blend with an enhanced field conductivity and enhanced space charge leakage at high fields relative to a semiconductive shield made with a blend which does not include a polar polymer modifier; and (d) at least one ion scavenger in an amount effective to reduce ionic mobility relative to a semiconductive shield made with a blend, which does not include an ion scavenger.
- 2. A high-voltage direct current cable semiconductive shield according to claim 1, wherein the ethylene copolymer is selected from the group consisting of
(a) ethylene/alpha olefin copolymers and (b) nonpolar, low crystalline ethylene copolymers selected from the group consisting of ethylene/propylene copolymer and ethylene/styrene copolymer and mixtures thereof.
- 3. The high-voltage direct current semiconductive shield of claims 1 or 2, wherein the blend further includes at least one heat stabilizer.
- 4. The high-voltage direct current semiconductive shield of any of claims 1-3, wherein
(a) the polar polymer modifier is selected from the group consisting of (i) a polymer having a density of less than 0.900 grams/cubic centimeter with at least one side group selected from the group consisting of hydroxyl, carboxyl, styrenic; (ii) a polymer having a density of less than 0.900 grams/cubic centimeter and at least one side group which is a residue of maleic anhydride, vinyl acetate or vinyl acrylate; (iii) a polylactone resin and; (iv) mixtures thereof, and (b) the ion scavenger has at least one chelating group.
- 5. The high-voltage direct current semiconductive shield as recited in claim 4, wherein the ion scavenger is selected from the group consisting of 1,2-bis(3,5-di-tert-butyl-4-hydroxyhydrocinnamoyl)hydrazine, poly[[6-[1,1,3,3-tetramethylbutyl)amino]-s-triazine-2,4-diyl] [2,2,6,6-tetramethyl-4-piperidyl)imino]hexamethylene[(2,2,6,6-tetramethyl-4-piperidyl)imino]] N,N′-bis(O-hydroxybenzal) oxalydihydride, barbituric acid, tertiary phosphorous acid ester of a thiobisphenol, and N,N′-diphenyuloxamid, and mixtures thereof.
- 6. The high-voltage direct current semiconductive shield of any one of claims 1-5, wherein the ethylene copolymer is crosslinked.
REFERENCE TO PARENT APPLICATION
[0001] This is a continuation-in-part of application Ser. No. 10/263,328.
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
10263328 |
Oct 2002 |
US |
Child |
10663525 |
Sep 2003 |
US |