Claims
- 1. An organic light-emitting device comprising an anode component comprising a metal conducting oxide material having a work function greater than 4.7 eV, a cathode component and at least one organic conductive layer therebetween.
- 2. The device of claim 1 wherein said anode component material is selected from the group consisting of Ga—In—O compositions, Zn—In—O compositions and said compositions doped with Sn.
- 3. The device of claim 2 wherein said component material is a Sn-doped Zn—In—O composition.
- 4. The device of claim 3 wherein said Zn—In—O composition is Zn0.45In0.88Sn0.66O3.
- 5. The device of claim 2 wherein one said conductive layer comprises a hole injection layer.
- 6. The device of claim 2 wherein one of said conductive layers comprises a hole transport layer.
- 7. The device of claim 2 wherein one said conductive layer comprises a primary color light-emitting polymeric composition.
- 8. The device of claim 7 wherein said polymeric composition is poly(9,9-dioctylfluorene) and said anode component material is a Sn-doped Zn—In—O composition.
- 9. The device of claim 8 further including a hole injection layer on said anode component, said injection layer comprising a triarylamine composition.
- 10. An optoelectric anode component comprising a doped indium oxide composition having a work function greater than about 5.0 eV.
- 11. The anode component of claim 10 wherein said dopant is selected from the group consisting of Ga and Zn.
- 12. The anode component of claim 11 wherein said composition is selected from the group consisting of Ga—In—O and Zn—In—O.
- 13. The anode component of claim 11 further including an Sn dopant, wherein said composition is selected from the group consisting of Ga—In—Sn—O and Zn—In—Sn—O.
- 14. A method of using energy level alignment to enhance the performance properties of an organic light-emitting diode device, said method comprising:
providing an anode component comprising a conductive oxide material, said material having a work function; and contacting said anode with a conductive layer comprising an organic composition having an ionization potential, said ionization potential level and said work function level aligned, said alignment defined by a difference between said ionization potential and said work function less than 1.2 eV.
- 15. The method of claim 14 wherein said conducting oxide material is selected from the group consisting of Ga—In—O compositions, Zn—In—O compositions and said compositions doped with Sn.
- 16. The method of claim 15 wherein said composition is an Sn-doped Zn—In—O composition.
- 17. The method of claim 14 wherein said conductive layer comprises at least one of a hole injection component, a hole transport component and an emissive component.
- 18. The method of claim 17 wherein said emissive component comprises a blue light-emitting polymeric composition spincast on said anode component.
- 19. The method of claim 18 wherein said anode component is Zn0.45In0.88Sn0.66O3, having a work function of about 6.1 eV.
- 20. The method of claim 19 wherein said polymeric composition is poly(9,9-dioctylfluorene) having a work function of about 5.9 eV.
Parent Case Info
[0001] This application claims priority benefit of provisional application serial No. 60/315,159 filed Aug. 27, 2001, the entirety of which is incorporated herein by reference.
Government Interests
[0002] The United States government has certain rights to this invention pursuant to Grant Nos. CAMP MURI (N00014-95-1-1319) and DMR-0076097, to Northwestern University from the Office of Naval Research and National Science Foundation, respectively.
Provisional Applications (1)
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Number |
Date |
Country |
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60315159 |
Aug 2001 |
US |