The present invention relates to methods for improving the metal surface conductivity and/or the corrosion resistance of metal components used in electrochemical applications, and more particularly, to the design of such metal components and the use of cost-effective processing methods for depositing small amounts of conductive materials to reduce the surface electrical contact resistance of a corrosion-resistant metal substrate surface.
Metallic materials are widely used in various devices for electrochemical applications, including electrodes used in a chlor-alkali processes and separate/interconnect plates used in both low temperature (proton exchange membrane) and high temperature (solid oxide) fuel cells. Metal-based components are also used in batteries, electrolyzers, and electrochemical gas separation devices, for example. In these and similar applications, it is desirable for the metal-based components to have a surface with high electrical conductance (or low electrical resistance) to reduce the internal electrical losses that can occur in the electrochemical devices and achieve high operation efficiency in such devices. One of the difficulties usually encountered in electrochemical applications is that the metal-based component need also have high corrosion-resistant properties in addition to having high electrical conductance.
Coating metal-based components with a corrosion-resistant material, such as a chromium or nickel layer, for example, is a common industrial practice. These materials, however, cannot be used in some types of severe corrosive environments in electrochemical devices. While precious metals have excellent corrosion-resistant properties and are also highly conductive, they tend to be too costly for large-volume commercial applications.
Other materials, such as titanium, zirconium, and silicon, for example, can have outstanding corrosion-resistant properties, particularly after applying proper passivation treatments. These materials, however, have other limitations. For example, the electrical contact resistance of these materials is very high, especially after passivation. Moreover, these materials are too costly and/or are sometimes difficult to process. As a result, these materials can be limited in their commercial use.
Therefore, there is a need for technologies that can provide reduced-cost coatings for use in electrochemical applications that improve the electrical conductivity and/or corrosion-resistant of those substrates. Such coatings can be used in devices for electrochemical applications having metal-based components, such as fuel cells, batteries, electrolyzers, and gas separation devices, for example.
Various embodiments are described below for methods in which materials can be disposed on metal substrates for use in electrochemical applications that improve the electrical conductivity and/or corrosion-resistant of those substrates at reduced or lower costs. Such embodiments can be used in devices for electrochemical applications having metal-based components, such as fuel cells, batteries, electrolyzers, and gas separation devices, for example.
In some embodiments, the electrical contact resistance of a corrosion-resistant metal substrate can be reduced by depositing multiple highly-electrically-conductive contact points or contact areas on the corrosion-resistant metal substrate surface. These contact points can be used to electrically connect the component having the corrosion-resistant metal substrate with other components in electrochemical devices to maintain good electrical continuity. These contact points need not cover the entire surface (e.g., contacting surface) of the corrosion-resistant metal substrate, resulting in lower materials and processing costs. These contact points can include various corrosion-resistant and/or electrically-conductive materials, such as, but not limited to, precious metals, conductive nitrides, carbides, borides and carbon, for example.
The metal splats 12 can include precious metal particles that are sprayed and/or bonded onto the surface of the corrosion-resistant metal substrate 10. The metal splats 12 can have high electrical conductivity and can include gold, palladium, platinum, iridium, and/or ruthenium. In one example, a material used for the metal splats 12 can have a contact resistance of about 50 milliohms-per-square centimeter (mΩ/cm2) or lower. In some embodiments, it may be desirable for the contact resistance of the material used for the metal splats 12 to have a contact resistance of 10 mΩ/cm2 or lower, for example. A thickness associated with the metal splats 12 is in the range of about 1 nanometer (nm) to about 5 microns (μm). In some embodiments, metal splats 12 is gold, and the thickness of the splats can have a range of 1 nm-5 nm, 1 nm-10 nm, 10 nm-50 nm, 10 nm-100 nm, 10 nm-20 μm, 1 nm-0.5 μm, 20 nm-0.5 μm, 100 nm-0.5 μm, 20 nm-1 μm, 100 nm-1 μm, 0.5 μm-5 μm, or 1 μm-20 μm, for example, with a range of 10 nm-20 μm being desirable in certain embodiments. The electrically-conductive metal splats 12 can be deposited on the corrosion-resistant metal substrate 10 through a thermal or a cold spray process, for example.
Thermal spraying techniques provide a low-cost, rapid fabrication deposition technique that can be used to deposit a wide range of materials in various applications. In a typical thermal spraying, materials are first heated to, for example, temperatures higher than 800 degrees Celsius (° C.), and subsequently sprayed onto a substrate. The material can be heated by using, for example, a flame, a plasma, or and electrical arc and, once heated, the material can be sprayed by using high flow gases. Thermal spraying can be used to deposit metals, ceramics, and polymers, for example. The feeding materials can be powders, wires, rods, solutions, or small particle suspensions.
There are various types of thermal spraying techniques that can be used for material deposition, such as those using salt solutions, metal particle suspensions, dry metal particles, metal wires, or composite particles having a metal and a ceramic. One type of thermal spraying is cold gas dynamic spraying. In cold gas dynamic spraying, the material is deposited by sending the materials to the substrate at very high velocities, but with limited heat, typically at temperatures below 1000 degrees Fahrenheit (° F.). This process, however, has the advantage of the properties of the material that is being deposited are less likely to be affected by the spraying process because of the relatively low temperatures.
In this embodiment, the metal splats 12 can be thermally sprayed onto the top surface of the corrosion-resistant metal substrate 10 by thermally spraying a salt solution or a metal particle suspension. The salt solution can include a one percent (1%) in weight gold acetate solution in water, for example. The metal particle suspension can include gold powder, ethylene glycol, and a surfactant, for example. In one example, the metal particle suspension can include a mix having 2.25 grams (g) of gold powder (at about 0.5 μm in diameter), 80 g of ethylene glycol, and 0.07 g of surfactant (PD-700 from Uniquema) and then dispersed for 15 minutes using an ultrasonic probe.
The metal splats 12 can be deposited to cover a portion of the surface (e.g., the top surface area) of the corrosion-resistant metal substrate 10 that is less than the entire surface of the corrosion-resistant metal substrate 10. Said differently, less than the entire area of the surface of the corrosion-resistant metal substrate 10 that is typically used for contacting other components is covered by the metal splats 12. In this manner, the metal splats 12 can increase the electrical conductance of the surface of the corrosion-resistant metal substrate 10 but the amount of precious metal that is used can be significantly less than if a continuous metal layer was deposited on the corrosion-resistant metal substrate 10. In some embodiments, the portion or amount (e.g., top surface area) of the corrosion-resistant metal substrate 10 that is covered by the multiple metal splats 12 can be predetermined and the rate at which the metal splats 12 are disposed can be controlled to achieve that predetermined amount. For example, the percentage of the surface of the corrosion-resistant metal substrate 10 covered by the metal splats 12 can be in the range of 0.5 percent (%) to 10%, 10% to 30%, 20% to 40%, 30% to 50%, 40% to 60%, or 50% to 70%, or 50% to 95%. In some embodiments, the percentage of the surface of the corrosion-resistant metal substrate 10 covered by the metal splats 12 can be approximately 50% or less, 60% or less, 70% or less, or 95% or less.
In some embodiments, other deposition methods can be used to deposit the metal splats or dots 12 on the corrosion-resistant metal substrate 10. One of the most common deposition techniques is the use of a plating process to plate precious metal on a substrate. In some instances, plating can result in poor adhesion of the plated metal dots or particles 12 on the corrosion-resistant metal substrate 10. In such instances, a subsequent bonding step or process may be desirable to improve the adhesion characteristics. A bonding step or process can include thermally treating the metal splats 12 at 450 degrees Celsius (° C.) in air for approximately one hour, for example. Another deposition technique is physical vapor deposition (PVD) in which materials are deposited on the substrate in vacuum. PVD, however, is very expensive because of the cost associated with generating a vacuum.
To contain or limit the deposition of the metal splats 12 to the raised portions 14 of the corrosion-resistant metal substrate 10, a mask 16 having openings 16a can be used. For example, during thermal spraying, the openings 16a can be configured to substantially coincide with the raised portions 14 such that metal splats 12 are deposited on the raised portions 14 and not on other portions or regions of the corrosion-resistant metal substrate 10. The mask can be temporary and can be removed after the processing, or can be permanent and can remain with the metal plate.
The corrosion-resistant metal or alloy particles 22 can be deposited and/or bonded on the top surface of the corrosion-resistant metal substrate 20. The corrosion-resistant particles 22 can be disposed on the top surface of the corrosion-resistant metal substrate 20 through a thermal spraying process, a selective plating process, a selective etching process, or a sputtering process using shield masks, for example. The corrosion-resistant particles 22 can be deposited as splats, dots, and/or strips, in accordance with the deposition technique used. The bonding can include a thermal treatment of corrosion-resistant particles 22 at 450° C. in air for approximately one hour, for example. The corrosion-resistant particles 22 can include palladium, for example. A thickness associated with the corrosion-resistant particles 22 is in the range of about 0.01 μm to about 20 μm. In some embodiments, the thickness of the corrosion-resistant particles 22 can have a range of 0.01 μm-0.2 μm, 0.1 μm-0.5 μm, 0.1 μm-1 μm, 0.1 μm-5 μm 0.5 μm-1 μm, 1 μm-2 μm, 1 μm-5 μm, 2 μm-5 μm, 5 μm-10 μm, or 10 μm-20 μm for example, with a range of 0.1 μm-5 μm being desirable in certain embodiments.
The thin electrically-conductive metal layer 24 can include a precious metal and can be selectively plated (e.g., by electro-chemical plating process or by an electroless chemical plating process) on the outer surface of the corrosion-resistant particles 22. The conductive metal layer 24 that covers the corrosion-resistant particles 22 is used to improve the electrical conductance and/or the corrosion resistance of the corrosion-resistant particles 22. The conductive metal layer 24 can include gold, platinum, iridium, and ruthenium, for example. A thickness associated with the conductive metal layer 24 is in the range of about 1 nm to about 1 μm. In some embodiments, the thickness of the conductive metal layer 24 can have a range of 1 nm-5 nm, 1 nm-10 nm, 10 nm-50 nm, 10 nm-100 nm, 1 nm-0.5 μm, 20 nm-0.5 μm, 100 nm-0.5 μm, or 100 nm-1 μm, for example, with a range of 10 nm-100 nm being desirable in certain embodiments.
The corrosion-resistant particles 22 can be deposited to cover a portion of the top surface of the corrosion-resistant metal substrate 20 that is less than the entire surface of the corrosion-resistant metal substrate 20. In this manner, the corrosion-resistant particles 22 with the conductive metal layer 24 can be used as highly-electrically-conductive contact points to increase the electrical conductance of the surface of the corrosion-resistant metal substrate 20 but at a lower cost than if a continuous metal layer was deposited on the corrosion-resistant metal substrate 20. Similar ratios or percentages as described above in
As shown in
The corrosion-resistant particles 23 can be deposited and/or bonded on the top surface of the corrosion-resistant metal substrate 21. The corrosion-resistant particles 23 can be disposed on the top surface of the corrosion-resistant metal substrate 21 through a thermal spraying process, a selective plating process, a selective etching process, or a sputtering process using shield masks, for example. The corrosion-resistant particles 23 can be deposited as splats, dots, and/or strips, in accordance with the deposition technique used. The corrosion-resistant particles 23 can include titanium, chromium, or nickel, or an alloy made of any one of those materials, for example. A thickness associated with the corrosion-resistant particles 23 is in the range of about 0.1 μm to about 100 μm. In some embodiments, the thickness of the corrosion-resistant particles 23 can have a range of 0.1 μm-0.5 μm, 0.1 μm-1 μm, 0.1 μm-50 μm, 0.5 μm-1 μm, 1 μm-2 μm, 1 μm-5 μm, 1 μm-10 μm, 1 μm-50 μm, 5 μm-50 μm, 10 μm-50 μm, 20 μm-50 μm, or 50 μm-100 μm, for example, with a range of 0.1 μm-50 μm being desirable in certain embodiments.
The conductive nitride layer 25 can be formed by using a nitration process that includes annealing the corrosion-resistant particles 23 at a temperature range of about 800° C. to about 1300° C. in a substantially pure nitrogen atmosphere. In some instances, the nitration process may also result in a nitride layer 25a being formed in portions of the top surface of the corrosion-resistant metal substrate 21 that are void of a corrosion-resistant particles 23. The nitride layer 25a, however, need not adversely affect the electrical conductance or the corrosion resistance of the corrosion-resistant metal substrate 21. A thickness associated with the conductive nitride layer 25 is in the range of about 1 nm to about 10 μm. In some embodiments, the thickness of the conductive metal layer 24 can have a range of 1 nm-5 nm, 1 nm-10 nm, 2 nm-1 μm, 10 nm-50 nm, 10 nm-100 nm, 1 nm-0.5 μm, 5 nm-20 nm, 20 nm-0.5 μm, 100 nm-0.5 μm, 100 nm-1 μm, or 1 μm-10 μm for example, with a range of 2 nm-1 μm being desirable in certain embodiments.
The corrosion-resistant particles 23 can be deposited to cover a portion of the surface of the corrosion-resistant metal substrate 21 that is less than the entire surface of the corrosion-resistant metal substrate 21. In this manner, the corrosion-resistant particles 23 with the conductive nitride layer 25 can increase the electrical conductance of the surface of the corrosion-resistant metal substrate 21 but at a lower cost than if a continuous metal layer was deposited on the corrosion-resistant metal substrate 21. Similar ratios or percentages as described above in
In
As shown in
The electrically-conductive ceramic particles 32 can be deposited to cover a portion of the top surface of the corrosion-resistant metal substrate 30 that is less than the entire surface of the corrosion-resistant metal substrate 30. Similar ratios or percentages as described above in
In
In
As described above, the alloy 42 can be deposited to cover a portion of the top surface of the corrosion-resistant metal substrate 40 that is less than the entire surface of the corrosion-resistant metal substrate 40, or the whole surface of the corrosion-resistant metal substrate 40. Moreover, when less than the entire surface of the corrosion resistant metal substrate 40 is covered, similar ratios or percentages as described above in
The carbon nanotubes 54 can be used as highly-electrically-conductive contact points to reduce the electrical contact resistance of the corrosion-resistant metal substrate 50. The thin layer of catalyst 52 is used to enable the growth of the carbon nanotubes 54 on the corrosion-resistant metal substrate 50. In some embodiments, the carbon nanotubes 54 can be grown on substantially the entire top surface of the corrosion-resistant metal substrate 50. In other embodiment, the carbon nanotubes 54 can be grown on a portion or on multiple portions of top surface of the corrosion-resistant metal substrate 50. In some embodiments, such as when the corrosion-resistant metal substrate 50 is a nickel-containing alloy structure, for example, it may be possible to grow the carbon nanotubes 54 directly from the corrosion-resistant metal substrate 50 without the need of the catalyst 52.
When growing the carbon nanotubes 54, a very thin layer of the catalyst 52 is deposited on the metal surface. The catalyst 52 can include nickel, iron, platinum, palladium, and/or other materials with like properties. The catalyst 52 can be deposited such that it covers substantially the entire top surface of the corrosion-resistant metal substrate 50 or can be deposited to cover a portion or multiple portions of the surface of the corrosion-resistant metal substrate 50. The corrosion-resistant metal substrate 50 with the catalyst 52 is placed in the reaction chamber to grow the carbon nanotubes 54 on the catalyst 52 through a chemical vapor deposition (CVD) process or through a plasma enhanced chemical vapor deposition (PECVD) process. When desirable, the catalyst 52 that may exist on top of the carbon nanotubes 54 can be removed through a chemical etching process or through an electro-chemical etching process after the carbon nanotubes 54 are firmly attached to the top surface of the corrosion-resistant metal substrate 50. In some embodiments, the corrosion-resistant metal substrate 50 can go through a passivation process to enhance its corrosion resistance.
The corrosion-resistant metal substrate 60 can include low-cost carbon steel, stainless steel, copper, and/or aluminum, and/or alloys made of any one of these materials. In one example, the corrosion-resistant coating layer 62 can include titanium, zirconium, niobium, nickel, chromium, tin, tantalum, and/or silicon, and/or alloys made of any one of these materials. In another example, the corrosion-resistant layer 62 can include electrically-conductive or semi-conductive compounds, such as silicon carbide or chromium carbide, titanium nitride for example. A thickness of the corrosion-resistant layer 62 can range from about 1 nm to about 50 μm. In some embodiments, the thickness of the corrosion-resistant layer 62 can have a range of 1 nm-100 nm, 1 nm-200 nm, 1 nm-10 μm, 0.01 μm-0.5 μm, 0.01 μm-1 μm, 1 μm-5 μm, 1 μm-10 μm, 10 μm-20 μm, 10 μm-50 μm, or 20 μm-50 μm, for example, with a range of 1 nm-10 μm being desirable in certain embodiments.
The corrosion-resistant coating layer 62 can be disposed on the top surface of the corrosion-resistant metal substrate 60 by using a vapor deposition process (e.g., PVD or CVD) or a plating process. By applying a relatively thick coating for the corrosion-resistant coating layer 62, it may be possible to minimize the number and/or the size of defects that typically occur when coating a substrate. Moreover, to improve the adhesion of the corrosion-resistant coating layer 62 to the corrosion-resistant metal substrate 60, the corrosion-resistant metal substrate 60 with the corrosion-resistant coating layer 62 can go through a proper heat treatment (e.g., bonding process). For example, the corrosion-resistant metal substrate 60 with the corrosion-resistant layer 62 can be thermally treated at 450° C. in air for approximately one hour. Such thermal treatment can also be used to eliminate or minimize the number and/or size of tiny pores that typically occur as a result of a coating layer being deposited by PVD process. In some embodiments, to enhance the corrosion resistance properties of the corrosion-resistant coating layer 62, a surface passivation treatment can be applied on the corrosion-resistant coating layer 62 before or after the electrically-conductive splats 64 are deposited.
The highly-electrically-conductive contact points 64 can include gold, palladium, platinum, iridium, ruthenium, niobium, and/or osmium, as described above with respect to
The highly-electrically-conductive contact points 64 can be deposited using any one of an electro-plating process, electroless plating process, a thermal spraying process, vapor deposition process, or a metal brushing process, for example. A high-temperature treatment can be used after deposition to enhance the bonding between the highly-electrically-conductive contact points 64 and the corrosion-resistant coating layer 62.
In some embodiments, an additional layer (not shown in
In a first example of a method to produce a structure such as the one described above with respect to
In some embodiments, photolithographic techniques can be used to produce a particular pattern or arrangement for the metal dots or splats that are deposited a substrate such as the titanium-coated SS316 substrates in
When depositing materials, layers, or coatings onto an substrate, coating defects generally occur as a result of such processes. These defects could be in the form of small pinholes, or as micro-cracks in the coating layer (e.g., the corrosion-resistant coating layer 62). Such defects can cause the accelerated corrosion of the corrosion-resistant metal substrate 60 because of the electrical coupling that can take place between the substrate metal 60 and the coating layer material 62. Below are described various embodiments in which a plating process can be used to seal the defects that can occur in the corrosion-resistant coating layer 62 by selectively plating (e.g., electro-plating, electroless plating) corrosion-resistant metals, such as gold, palladium, chromium, tin, or platinum, for example, into the defects to cover the exposed portions of the corrosion-resistant metal substrate 60. For example, the selective electro-plating of the precious metals can occur by controlling a voltage such that the corrosion-resistant metal primarily attaches to the defect in the corrosion-resistant coating layer 62, instead of on the surface of the corrosion-resistant coating layer 62. An appropriate voltage or voltages to use in selective electro-plating applications can be typically determined empirically. A heat treatment process or step can used to ensure an effective bonding and/or sealing of the plated gold, palladium, tin, chromium, or platinum with the corrosion-resistant metal substrate 60 and/or the corrosion-resistant coating layer 62. In this regard, the plated metal not only seals the coating defects but is also used as an electrical conductive via or conductive conduit between the corrosion-resistant metal substrate 60 and the corrosion-resistant coating layer 62 that can enhance the electrical conductance characteristics of the corrosion-resistant metal substrate 60. In some embodiments, the sealing of coating defects can be done before the highly-electrically-conductive contact points 64 are disposed on the corrosion-resistant layer 62.
The various embodiments described above have been presented by way of example, and not limitation. It will be apparent to persons skilled in the art(s) that various changes in form and detail can be made therein without departing from the spirit and scope of the disclosure. In fact, after reading the above description, it will be apparent to one skilled in the relevant art(s) how to implement alternative embodiments. Thus, the disclosure should not be limited by any of the above-described exemplary embodiments.
Moreover, the methods and structures described above, like related methods and structures used in the electrochemical arts are complex in nature, are often best practiced by empirically determining the appropriate values of the operating parameters, or by conducting computer simulation to arrive at the best design for a given application. Accordingly, all suitable modifications, combinations, and equivalents should be considered as falling within the spirit and scope of the disclosure.
In addition, it should be understood that the figures are presented for example purposes only. The structures provided in the disclosure are sufficiently flexible and configurable, such that they may be formed and/or utilized in ways other than those shown in the accompanying figures.
The present application is a Divisional of U.S. application Ser. No. 12/350,896, filed Jan. 8, 2009 which claims priority to U.S. Provisional Application Ser. No. 61/089,233, filed on Aug. 15, 2008, entitled “Method to Produce High Electrical Conductive Surface for Electrochemical Applications,” U.S. Provisional Application Ser. No. 61/023,273, filed on Jan. 24, 2008, entitled “Spray Method for the Formation of High Electrical Conductive Surface for Electrochemical Applications,” and U.S. Provisional Application Ser. No. 61/019,657, filed on Jan. 8, 2008, entitled “Method of Metal Corrosion Protection for Electrochemical Applications,” each of which is incorporated herein by reference in its entirety.
Number | Name | Date | Kind |
---|---|---|---|
3755105 | Messner | Aug 1973 | A |
4031268 | Fairbairn | Jun 1977 | A |
4104785 | Shiba | Aug 1978 | A |
4310404 | Satoh | Jan 1982 | A |
4643818 | Seko et al. | Feb 1987 | A |
4666743 | Ohta et al. | May 1987 | A |
4706870 | Legge | Nov 1987 | A |
5098485 | Evans | Mar 1992 | A |
5290410 | Tenfalt et al. | Mar 1994 | A |
5397657 | Ito et al. | Mar 1995 | A |
5624769 | Li et al. | Apr 1997 | A |
5682067 | Manley et al. | Oct 1997 | A |
6071570 | Hardee et al. | Jun 2000 | A |
6149794 | Heimann et al. | Nov 2000 | A |
6153080 | Heimann et al. | Nov 2000 | A |
6245390 | Baranovski et al. | Jun 2001 | B1 |
6258243 | Heimann et al. | Jul 2001 | B1 |
6322687 | Heimann et al. | Nov 2001 | B1 |
6372376 | Fronk et al. | Apr 2002 | B1 |
6379476 | Tarutani et al. | Apr 2002 | B1 |
6425745 | Lavin | Jul 2002 | B1 |
6455108 | Muffoletto et al. | Sep 2002 | B1 |
6475958 | Paul | Nov 2002 | B1 |
6572756 | Heimann et al. | Jun 2003 | B2 |
6592738 | Heimann et al. | Jul 2003 | B2 |
6599643 | Heimann et al. | Jul 2003 | B2 |
6649031 | Iqbal et al. | Nov 2003 | B1 |
6685988 | Van Steenkiste | Feb 2004 | B2 |
6728092 | Hunt et al. | Apr 2004 | B2 |
6761990 | Yoshitake | Jul 2004 | B1 |
6919543 | Abbott | Jul 2005 | B2 |
6924002 | Lee et al. | Aug 2005 | B2 |
6994779 | Heimann et al. | Feb 2006 | B2 |
7052741 | Medeiros et al. | May 2006 | B2 |
7070833 | Smith et al. | Jul 2006 | B2 |
7144628 | Kudo et al. | Dec 2006 | B2 |
7144648 | Tawfik et al. | Dec 2006 | B2 |
7309540 | Wang | Dec 2007 | B2 |
7399532 | Seido et al. | Jul 2008 | B2 |
7758921 | Liu et al. | Jul 2010 | B2 |
7763152 | Suzuki et al. | Jul 2010 | B2 |
7846591 | Gu et al. | Dec 2010 | B2 |
20010050231 | Heimann et al. | Dec 2001 | A1 |
20020012804 | Heimann et al. | Jan 2002 | A1 |
20020054998 | Heimann et al. | May 2002 | A1 |
20020151161 | Furusawa | Oct 2002 | A1 |
20020168466 | Tapphorn et al. | Nov 2002 | A1 |
20030124427 | Takeuchi et al. | Jul 2003 | A1 |
20030178317 | Heimann et al. | Sep 2003 | A1 |
20030235711 | Seido et al. | Dec 2003 | A1 |
20040081881 | Vyas et al. | Apr 2004 | A1 |
20040086689 | Takahashi | May 2004 | A1 |
20040197661 | Utsunomiya | Oct 2004 | A1 |
20050026020 | Franklin | Feb 2005 | A1 |
20050089742 | Ishigami et al. | Apr 2005 | A1 |
20050100771 | Vyas et al. | May 2005 | A1 |
20050158621 | Benoit | Jul 2005 | A1 |
20050260473 | Wang | Nov 2005 | A1 |
20050266161 | Medeiros et al. | Dec 2005 | A1 |
20060003174 | Yashiki et al. | Jan 2006 | A1 |
20060011490 | Nguyen et al. | Jan 2006 | A1 |
20060019142 | Abd Elhamid et al. | Jan 2006 | A1 |
20060094309 | Holtkamp et al. | May 2006 | A1 |
20060141340 | Takeuchi et al. | Jun 2006 | A1 |
20060222777 | Skoog et al. | Oct 2006 | A1 |
20070015034 | Vyas et al. | Jan 2007 | A1 |
20070138147 | Molz et al. | Jun 2007 | A1 |
20070160899 | Atanassova et al. | Jul 2007 | A1 |
20070231673 | Noh | Oct 2007 | A1 |
20070248832 | Maeda et al. | Oct 2007 | A1 |
20080085439 | Hilliard | Apr 2008 | A1 |
20080134493 | Vyas et al. | Jun 2008 | A1 |
20080145633 | Kodas et al. | Jun 2008 | A1 |
20080220234 | Ko et al. | Sep 2008 | A1 |
20090042084 | Kobayashi | Feb 2009 | A1 |
20090087549 | Zhou | Apr 2009 | A1 |
20090176120 | Wang | Jul 2009 | A1 |
20100021634 | Kodas et al. | Jan 2010 | A1 |
20100133111 | Nocera et al. | Jun 2010 | A1 |
20100151267 | Kodas et al. | Jun 2010 | A1 |
20100143781 | Keshavarz et al. | Jul 2010 | A1 |
20100285386 | Wang | Nov 2010 | A1 |
20110076587 | Wang et al. | Mar 2011 | A1 |
20110091789 | Mofakhami et al. | Apr 2011 | A1 |
20120145532 | Smolyakov et al. | Jun 2012 | A1 |
20140242462 | Wang | Aug 2014 | A1 |
Number | Date | Country |
---|---|---|
533 691 | Feb 1973 | CH |
101918619 | Dec 2010 | CN |
102074715 | Jul 2015 | CN |
1 369 504 | Dec 2003 | EP |
1 808 920 | Jul 2007 | EP |
1 847 628 | Oct 2007 | EP |
1-301878 | Dec 1989 | JP |
2003-268567 | Sep 2003 | JP |
2006-080083 | Mar 2006 | JP |
10-2006-0106865 | Oct 2006 | KR |
WO 02059936 | Aug 2002 | WO |
WO 2004052559 | Jun 2004 | WO |
WO 2005085490 | Sep 2005 | WO |
WO 2007149881 | Dec 2007 | WO |
WO 2014134019 | Sep 2014 | WO |
Entry |
---|
A.S. Woodman et al., “Development of Corrosion-Resistant Coatings for Fuel Cell Bipolar Plates”, American Electroplaters and Surface Finishers Society, AESF SUR/FIN '99 Prooceedings, Jun. 21-24, 1999. |
Toshiki SATO et al., “The Titanium Separator with Stable Durability and Low Electrical Resistance”, Materials Research Laboratory, Kobelco Kobe Steel Group, 10 pages, Undated. |
D.S.R. Krishna et al., “Effect of Thermal Oxidation Conditions on Tribological Behaviour of Titanium Films on 316L Stainless Steel”, Science Direct Surface & Coating Technology, vol. 198, pp. 447-453 (2005). |
J. Berghaus et al., “Suspension Plasma Spraying of Nanostructured WC-12Co Coatings”, Journal of Thermal Spray Technology, vol. 15(4), pp. 676-681, Dec. 2006. |
International Search Report issued in International Application No. PCT/US2009/030475, dated Aug. 19, 2009. |
Written Opinion issued in International Application No. PCT/US2009/030475, dated Aug. 19, 2009. |
International Preliminary Report on Patentability issued in International Application No. PCT/US2009/030475, dated Jul. 22, 2010. |
Erich Lugscheider et al., “Reactive Plasma Spraying of Titanium”, Advanced Engineering Materials, vol. 2, No. 5, pp. 281-284 (2000). |
Supplementary European Search Report issued in EP 09 70 0943, dated Jan. 25, 2011. |
International Search Report issued in International Application No. PCT/US2010/050578, dated Jun. 7, 2011. |
Written Opinion issued in International Application No. PCT/US2010/050578, dated Jun. 7, 2011. |
English language abstract of KR 10-2006-0106865, published Oct. 12, 2006. |
English language abstract of CH 533,691, published Feb. 15, 1973. |
Machine English language translation of CH 533,691, published Feb. 15, 1973. |
“Thermal Spraying: Practice, Theory, and Application”, American Welding Society, pp. 3, 31, and 32 (1985). |
Tzeng, et al. “Electrical Contacting Techniques for High TC Superconductor Applications”, Superconductivity and Its Applications, 1998, pp. 174-179. |
Chinese Office Action issued in CN 200980101881 dated Jun. 5, 2012. |
Partial English language translation of Chinese Office Action issued in CN 200980101881 dated Jun. 5, 2012. |
European Office Action issued in EP 09700943.5, dated Jun. 27, 2012. |
Yamada, et al. “Nitridation of aluminum particles and formation process of aluminum nitride coatings by reactive RF plasma spraying,” Thin Solid Films 515 (2007), pp. 4166-4171. |
Bacci et al. “Reactive plasma spraying of titanium in nitrogen containing plasma gas”, Materials Science and Engineering A283 (2000), pp. 189-195. |
Chinese Office Action issued in CN 200980101881 dated Jan. 6, 2013. |
Partial English language translation of Chinese Office Action issued in CN 200980101881 dated Jan. 6, 2013. |
“Laser Plating and Melting for Hard metal Surfaces”, IBM Technical Disclosure Bulletin, vol. 26, No. 7A, Dec. 1, 1983. |
Chinese Office Action issued in CN 200980101881 dated Aug. 1, 2014. |
Partial English language translation of Chinese Office Action issued in CN 200980101881 dated Aug. 1, 2014. |
Korean Office Action issued in Korean Application No. 10-2010-7017499 dated Jan. 20, 2015. |
English language translation of Korean Office Action issued in Korean Application No. 10-2010-7017499 dated Jan. 20, 2015. |
English language abstract and translation of JP 2003-268567 published Sep. 25, 2003. |
International Search Report issued in International Application No. PCT/US2014/033667 dated Oct. 8, 2014. |
Written Opinion issued in International Application No. PCT/US2014/033667 dated Oct. 8, 2014. |
P. Gougeon et al., “Simultaneous Independent Measurement of Splat Diameter and Cooling Time during Impact on a Substrate of Plasma-Sprayed Molybdenum Particles”, Journal of Thermal Spray Technology, vol. 10, No. 1, pp. 76-82, Mar. 2001. |
J.W. Luster et al., “Formation and Characterization of Corrosion Resistant Amorphous Coating by Thermal Spraying”, In Surface Modification Technologies IX, pp. 479-493 (1996). |
International Search Report issued in International Application No. PCT/US2014/018260 dated May 30, 2014. |
Written Opinion issued in International Application No. PCT/US2014/018260 dated May 30, 2014. |
L.C. Erickson et al., “Alumina Coatings by Plasma Spraying of Monosize Sapphire Particles”, Journal of Thermal Spray Technology, vol. 8, No. 3, pp. 421-426. Sep. 1999. |
Supplementary European Search Report issued in EP 14 75 6924 dated Jun. 29, 2016. |
Machine English language abstract and translation of CN102074715 published Jul. 22, 2015. |
Machine English language abstract and translation of JP2006080083 published Mar. 23, 2006. |
Supplementary European Search Report issued in EP 14 78 3237 dated Jun. 16, 2016. |
Chinese Office Action issued in CN 201480008566.7 dated Jun. 2, 2017. |
English language translation of Chinese Office Action issued in Chinese Application No. 201480008566.7 dated Jun. 2, 2017. |
Partial English language translation CN 101918619 dated Dec. 15, 2010. |
U.S. Appl. No. 12/350,896. |
U.S. Appl. No. 12/892,791. |
U.S. Appl. No. 13/931,393. |
U.S. Appl. No. 14/189,223. |
Korean Office Action issued in Korean Application No. 10-2010-7017499 dated Oct. 6, 2020. |
Canada Office Action issued in Application No. 2,899,513 dated Nov. 10, 2020. |
Number | Date | Country | |
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20170356074 A1 | Dec 2017 | US |
Number | Date | Country | |
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61019657 | Jan 2008 | US | |
61023273 | Jan 2008 | US | |
61089233 | Aug 2008 | US |
Number | Date | Country | |
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Parent | 12350896 | Jan 2009 | US |
Child | 15688423 | US |