Highly Magnetoresistive Thin Film Multilayers

Information

• NSF Award
• 8960023

Owner

• Nonvolatile Electronics, Incorporated

• Award Id

  8960023

• Award Effective Date

  1/1/1990 - 35 years ago

• Award Expiration Date

  9/30/1990 - 35 years ago

• Award Amount

  $ 49,978.00

• Award Instrument

  Standard Grant

The objective of this program is to synthesize a thin film multilayer composite material with a magnetoresistive effect up to ten times the magneto-resistance ratio of permalloy material. A composite iron-chromium multilayer with 25% room temperature magnetoresistive ratio has been made by molecular beam epitaxy techniques. This program will build on that work, but will provide a soft magnetic composite material with low magnetostriction and temperature coefficient of resistance, which are essential for practical applications. The multilayers will be sputtered for fast turnaround, alloy composition control, and may result in rapid commercialization.

• Program Officer

  Darryl G. Gorman

• Min Amd Letter Date

  1/5/1990 - 35 years ago

• Max Amd Letter Date

  1/5/1990 - 35 years ago

• ARRA Amount

• Name

  Nonvolatile Electronics Inc

• City

  Eden Prairie

• State

  MN

• Country

  United States

• Address

  11409 Valley View Road

• Postal Code

  553443617

• Phone Number

  6129961608

• First Name

  James

• Last Name

  Daughton

• Email Address

  daughton@nve.com

• Start Date

  1/1/1990 12:00:00 AM

• Name

  Materials Research

• Code

  106000

• Name

  Engineering-Metallurgy & Material

• Code

  57