Claims
- 1. A highly-oriented diamond film field-effect transistor, comprising;
- a source electrode,
- a drain electrode,
- a gate electrode,
- a first semiconducting diamond film connected to said source electrode,
- a second semiconducting diamond film connected to said drain electrode and having the same conductivity type as said first semiconducting diamond film,
- a highly resistant diamond film connected to said gate electrode and positioned between said first and second semiconducting diamond films, said highly resistant diamond film having a thickness in a direction between said first and second semiconducting diamond films of 10 .ANG. to 1 mm and an electrical resistance of 10.sup.2 .OMEGA..cm or more,
- a channel region being defined within said highly resistant diamond film, said channel region connecting said first and second semiconducting diamond films, and
- at least part of said first and second semiconducting diamond films and said highly resistant diamond film being made of a highly-oriented diamond film in which at least 80% of a film surface consists of a plurality of diamond crystals with (100) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..tau.} of the Euler angles {.alpha., .beta., .tau.}, which represent the orientations of the crystals with the (100) crystal planes, satisfy .vertline..DELTA..alpha..vertline..ltoreq.10.degree., .vertline..DELTA..beta..vertline..ltoreq.10.degree., and .vertline..DELTA..tau..vertline..ltoreq.10.degree. between adjacent (100) crystal planes.
- 2. A highly-oriented diamond film field-effect transistor, comprising;
- a source electrode,
- a drain electrode,
- a gate electrode,
- a first semiconducting diamond film connected to said source electrode,
- a second semiconducting diamond film connected to said drain electrode and having the same conductivity type as said first semiconducting diamond film,
- a highly resistant diamond film connected to said gate electrode and positioned between said first and second semiconducting diamond films, said highly resistant diamond film having a thickness in a direction between said first and second semiconducting diamond films of 10 .ANG. to 1 mm and an electrical resistance of 10.sup.2 .OMEGA..cm or more,
- a channel region being defined within said highly resistant diamond film, said channel region connecting said first and second semiconducting diamond films, and
- at least part of said first and second semiconducting diamond films and said highly resistant diamond film being made of a highly-oriented diamond film in which at least 80% of a film surface consists of a plurality of diamond crystals with (111) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..tau.} of the Euler angles {.alpha., .beta., .tau.}, which represent the orientations of the crystals with the (111) crystal planes, satisfy .vertline..DELTA..alpha..vertline..ltoreq.10.degree., .vertline..DELTA..beta..vertline..ltoreq.10.degree., and .vertline..DELTA..tau..vertline..ltoreq.10.degree. between adjacent (111) crystal planes.
- 3. A diamond field-effect transistor according to claim 1 wherein a non-diamond insulating layer is provided between said gate electrode and said highly resistant diamond film.
- 4. A diamond field-effect transistor according to claim 2 wherein a non-diamond insulating layer is provided between said gate electrode and said highly resistant diamond film.
- 5. A diamond field-effect transistor according to claim 3 wherein said non-diamond insulating layer is formed of at least one material selected from the group consisting of silicon oxides, silicon nitrides, aluminum oxides, aluminum nitrides and zirconium oxides.
- 6. A diamond field-effect transistor according to claim 4 wherein said non-diamond insulating layer is formed of at least one material selected from the group consisting of silicon oxides, silicon nitrides, aluminum oxides, aluminum nitrides and zirconium oxides.
Parent Case Info
This is a continuation of application Ser. No. 08/061,857 filed on 14 May 1993, now abandoned.
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Continuations (1)
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Number |
Date |
Country |
Parent |
61857 |
May 1993 |
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