Hybrid thin-film battery

Abstract
An electrochemical device is claimed and disclosed wherein certain embodiments have a cathode greater than about 4 μm and less than about 200 μm thick; a thin electrolyte less than about 10 μm thick; and an anode less than about 30 μm thick. Another claimed and disclosed electrochemical device includes a cathode greater than about 0.5 μm and less than about 200 μm thick; a thin electrolyte less than about 10 μm thick; and an anode less than about 30 μm thick, wherein the cathode is fabricated by a non-vapor phase deposition method. The electrochemical device may also include a substrate, a current collector, an anode current collector, encapsulation and a moderating layer.
Description
FIELD OF THE INVENTION

The field of this invention relates to electrochemical devices and methods of manufacturing thereof, and more particularly, the composition, method of depositing, and fabrication of solid-state, thin-film, secondary and primary electrochemical devices, including batteries.


BACKGROUND

Thick positive cathodes are good for creating energy-rich thin-film batteries. A thick positive cathode substantially increases the active cathode mass per unit area. Unfortunately, producing such cathodes with typical vacuum vapor phase processes has been problematic.


Cathodes made with a typical vacuum vapor phase method have a number of limitations. For instance, vacuum vapor phase deposited materials typically grow in columns as schematically shown in FIG. 1. This figure depicts schematically and in cross-sectional view three microscopic columns, grown by a vacuum vapor phase deposition method, of the positive cathode layer of an electrochemical device. As the columns grow through the process, the bases of these columns remain anchored to the substrate surface and the cross sectional area of these bases remains virtually fixed as the height of the columns grows. As the height of the columns increases, the aspect ratio (height of column/width of column) increases and the cathode film consisting of these columns and thus the entire device becomes mechanically unstable, typically around an aspect ratio of 15. Thus, there are limitations to the height, and therefore the thickness, of columns grown with a vacuum deposition processes. Limitations on the height directly correspond to the thickness of the cathode and the energy of an electrochemical device per unit area that can be produced using a vacuum vapor phase deposition method. Furthermore, thick cathodes take a relatively long time to grow using a vacuum vapor phase process and are, therefore, quite expensive. For instance, LiCoO2 positive cathodes grown in a vacuum vapor phase deposition method above about 3 μm become overly expensive because of their long deposition time.


Thus, there is demand for electrochemical devices whose cathodes can be produced thick and reliably while being fabricated quickly and inexpensively. Further, it would be desirable to accomplish these demands using any of the many well-known non-vapor phase deposition techniques and processes, such as slurry coating, Meyer rod coating, direct and reverse roll coating, doctor blade coating, spin coating, electrophoretic deposition, sol-gel deposition, spray coating, dip coating, and ink-jetting, to name a few.


Depositing a thicker cathode in order to increase the energy of an electrochemical device per unit area results in an increased, overall thickness of the device. Because an overall thickness increase of a milli, micro, or nano device is typically undesirable, the device manufacturer has to explore options of how to compensate for or offset such a thickness increase. A generally valid and desirable approach is to minimize the thickness and volume of all of the non-energy providing components inside an electrochemical device.


One of the options is to reduce the non-energy providing packaging of an electrochemical device. Both the encapsulation and the substrate are inherent and usually large, fractional parts of the packaging.


For instance, the reduction of an encapsulation thickness from 100 micrometers, which is a typical thickness for a laminate encapsulation, to a true thin-film encapsulation in the range of 1-10 micrometers would allow the electrochemical device manufacturer, for example, to increase the thickness of the energy bearing cathode by almost 100 micrometers without any discernible overall thickness change of the device. This design approach substantially improves the volumetric quantities of energy, capacity, and power of the electrochemical device. Because these physical performance quantities are required to be delivered in the smallest volume possible for most any milli, micro, or nano electrochemical device, the reduction of the non-energy providing components inside an electrochemical device is critically important for its acceptance in the marketplace.


The other option is to fabricate an electrochemical device onto the thinnest possible substrate, if used, traded or sold as a standalone device. This is different from the non-standalone case wherein the device manufacturer may exploit an existing, free surface in an electronic device (chip surface, printed circuit board surface, etc.) and then directly integrate, fabricate or deposit the electrochemical device onto that free surface. This surface then serves as the electrochemical device's substrate as well. One may consider such an electrochemical device being configured with a zero-thickness substrate because no further substrate thickness was introduced by the electrochemical device into the final electronic device. In the more common, standalone case, however, the limits of substrate thinness are reached when it does not provide adequate chemical and physical, mainly mechanical, protection or functionality anymore to support the electrochemical device. Because most vacuum deposited cathode materials require high-temperature processing to fully develop all of their physical properties, which in turn creates film stresses that are translated into the substrate, the mechanical properties of these vacuum vapor deposited cathode materials may challenge any substrate in terms of mechanical deformation.


The typical result of vacuum vapor phase deposited films in conjunction with high-temperature processing is a bending, warping, or general deformation of the substrate and thus the entire electrochemical device. If this situation occurs, then completing the fabrication of the electrochemical device becomes difficult, in addition to the mere fact that a deformed electrochemical device is not well suited for device integration. In contrast, non-vapor phase deposited cathode materials may be fabricated with most or even all of their important physical properties already developed at the time of deposition, so that any high-temperature processing becomes redundant. Hence, non-vapor phase deposited cathode materials and other components of an electrochemical device create less stress in the substrate and allow the use of a thinner substrate without the risk of substantially deforming it.


Accordingly, there is also a need for capsulation that exhibits fairly high-temperature characteristics.


Thus, there is demand for an electrochemical device (i) whose cathode can be produced thick and reliably while being fabricated quickly and inexpensively, (ii) whose substrate thickness is as thin as possible while not being deformed by the component layers of the electrochemical device, (iii) whose encapsulation is fabricated as thin as possible while still providing adequate protection against the ambient in which these devices are operated, and/or (iv) whose encapsulation is composed of high-temperature materials that provide the entire electrochemical device with increased thermal resilience.


SUMMARY

Various aspects and embodiments of the present invention, as described in more detail and by example below, address certain of the shortfalls of the background technology and emerging needs in the relevant industries.


One aspect of the invention is an electrochemical device comprising a positive cathode greater than about 0.5 μm and less than about 200 μm thick; a thin electrolyte less than about 10 μm thick; and an anode less than about 30 μm thick. The device may also comprise a substrate, current collectors, terminals, a moisture protection layer, and an encapsulation. In an embodiment of the invention, the cathode may be greater than about 5 μm and less than about 100 μm thick. The cathode may also be greater than about 30 μm and less than about 80 μm thick.


Another aspect of the invention is an electrochemical device comprising a non-vapor phase deposited cathode, an anode, and an electrolyte that is less than 10 μm thick. In an embodiment of the invention, the cathode may be greater than about 0.5 μm and less than about 200 μm thick, and the anode may be less than about 30 μm thick.


A cathode in accordance with an aspect of an embodiment of the invention may be non-vapor phase deposited. The cathode may be deposited by one of the following methods: slurry coating, Meyer rod coating, direct and reverse roll coating, doctor blade coating, spin coating, electrophoretic deposition or ink-jetting.


The cathode may comprise LiCoO2, LiMn2O4, LiMnO2, LiNiO2, LiFePO4, LiVO2, and any mixture or chemical derivative thereof. Alternatively these cathode materials may be doped with elements from the groups 1 through 17 of the periodic table.


In an embodiment, the electrolyte may comprise lithium phosphorus oxynitride (LiPON). The electrolyte may comprise a thin-film electrolyte. The electrolyte may be deposited by a vacuum vapor phase growth method or non-vapor phase method.


The anode may comprise lithium, a lithium alloy or a metal, which can form a solid solution or a chemical compound with lithium, or a so-called lithium-ion compound suitable for use as a negative anode material in lithium based batteries, such as, for example, Li4Ti5O12.


In a further aspect of an embodiment of the invention, an electrochemical device may also be encapsulated with an encapsulation process selected from the group consisting of vacuum vapor phase grown thin-film encapsulation, pressure-heat lamination as described by Snyder et al. in U.S. Pat. No. 6,916,679, the contents of which are hereby incorporated herein by reference in its entirety, metal foil attachment, and metal canning.


The device may further comprise a cathode current collector and an optional anode current collector on top or underneath of the thin electrolyte layer. The electrolyte immediately underneath the optional anode current collector may be protected by a moisture barrier, such as ZrO2, if the encapsulation has an opening that allows the optional anode current collector to be in direct contact with ambient atmosphere.


According to an aspect of an embodiment of the present invention, non-vapor phase fabrication methods may be used to form a positive cathode, and the cathode combined with cell components of an electrochemical device that are all, or in part fabricated by vacuum vapor phase methods. Exemplary embodiments that utilize such a combination of different methods are viewed as hybrid fabrication methods and resulting devices, for example, a “hybrid thin-film battery.”


In another aspect of an embodiment of the invention, the non-vapor phase fabrication of the positive cathode does not require a high-temperature fabrication step, which limits the stress development inside the component layer stack of an electrochemical device. This in turn allows use of a thinner substrate. Although thinner substrates may be prone to undesirable deformation under a given magnitude of stress, tradeoffs from using a thin substrate include a thinner electrochemical device for a given energy, capacity, and power performance. In other words, the use of a thinner substrate allows for increases in the volumetric quantities of energy, capacity, and power of an electrochemical device.


In another aspect, the cathode may be vacuum vapor phase grown, or fabricated by a non-vapor phase method, and then may be mechanically embossed or otherwise formed into structures that increase its surface area within the same previously coated footprint, but with resulting increased maximum thickness and decreased minimum thickness. This structure or architecture minimizes the average distance of any volume element inside the cathode relative to the neighboring solid state thin-film electrolyte layer, which, unlike in electrochemical devices with gel or liquid type electrolytes, typically does not intimately penetrate the cathode bulk. Therefore, minimizing the average distance of any volume element inside the cathode relative to the solid state thin-film electrolyte reduces the ionic diffusion lengths during operation of the electrochemical device, which in turn improves its power capability.


A further aspect of an embodiment of the invention involves mixing electronic conducting material such as carbon into an embossed or other surface-increased cathode structure to minimize electronic diffusion lengths inside the cathode bulk to improve the power capability of an electrochemical device.


In another aspect of an embodiment of the invention, an electrochemical device includes a thin-film encapsulation comprising or consisting of inorganic material that exhibits fairly good high-temperature characteristics.


In another aspect of an embodiment of the invention, a thin-film encapsulation is used to minimize the thickness contribution of the encapsulation to the overall thickness of the electrochemical device.


In another aspect, a thin encapsulation, such as a thin-film encapsulation, can overcompensate or at least compensate in full, or in part for any thickness increase of the cathode relative to the overall thickness of the electrochemical device. In addition, and compared with, for example, a pressure-heat laminate, the use of a thinner encapsulation directly increases the volumetric quantities of energy, capacity, and power of a given electrochemical device.


In yet another aspect of an embodiment of the invention, a thin-film encapsulation consists of multiple inorganic layers that all exhibit intrinsic, high-temperature stability, a characteristic that raises to some extent the temperature stability and resilience of the entire electrochemical device.





BRIEF DESCRIPTION OF THE FIGURES

The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the invention that together with the description serve to explain the principles of the invention. In the drawings:



FIG. 1 schematically shows a cathode with columns grown according to methods used in the prior art.



FIG. 2 illustrates a hybrid thin-film electrochemical device according to an exemplary embodiment of the present invention.



FIG. 3 shows a cross-sectional view of a scanning electron micrograph of a composite LiCoO2 cathode deposited by slurry coating and then coated with a LiPON thin-film electrolyte according to an exemplary embodiment of the invention.



FIG. 4 illustrates the electrochemical cycle behavior of an electrochemical device using the composite LiCoO2 cathode and the LiPON thin-film from FIG. 3 according to an exemplary embodiment of the invention.



FIG. 5 depicts a scanning electron micrograph of a 9 μm thick, fully crystalline LiCoO2 positive cathode film fabricated by electrophoretic deposition according to an exemplary embodiment of the invention.



FIG. 6 shows the current-discharge voltage performance of a thin-film electrochemical device whose LiCoO2 positive cathode was fabricated by electrophoretic deposition according to an exemplary embodiment of the invention.



FIG. 7 shows the reversible discharge capacity as a function of cycle number of a thin-film electrochemical device whose LiCoO2 positive cathode was fabricated by electrophoretic deposition according to an exemplary embodiment of the invention.



FIG. 8 shows a scanning electron micrograph of an about 15 μm thick, fully crystalline LiCoO2 positive cathode film deposited by ink-jetting according to an exemplary embodiment of the invention.



FIG. 9 shows a hybrid thin-film electrochemical device without a substrate according to an exemplary embodiment of the present invention.



FIG. 10 shows a multi-layer thin-film used to encapsulate an electrochemical device according to an exemplary embodiment of the present invention.



FIG. 11 shows the electrochemical device shown in FIG. 2, including a modulating LiPON layer and a multi-layer thin-film encapsulation layer according to an exemplary embodiment of the present invention.



FIG. 12 shows an inverted thin-film battery configuration according to an exemplary embodiment of the present invention.



FIG. 13 shows an exemplary embodiment of an inverted thin-film battery.



FIG. 14 shows an exemplary embodiment of an embossed cathode layer.





DETAILED DESCRIPTION


FIG. 1 illustrates a schematic cross-sectional view of a typical cathode layer 120 fabricated onto a metal current collector 101 over a substrate 100. In electrochemical devices produced by vacuum vapor phase deposition processes, the cathode may grow, for example, in columns 120 with inter-columnar void space 111. Also shown in FIG. 1 is a next layer in the fabrication process sequence of the thin-film electrochemical device, the electrolyte 110 with a typical bridging structure over the inter-columnar void space 111.



FIG. 2 shows a hybrid thin-film electrochemical device with a cathode 210 deposited without using a vacuum vapor phase process according to an exemplary embodiment of the present invention. In this embodiment, a cathode 210 is directly deposited onto a substrate 200. If metallically conducting, for example, the substrate 200 in this embodiment may also serve as the cathode current collector. Otherwise, a metallically conducting current collector (not shown) may be interposed between the substrate 200 and the cathode 210. The cathode 210, for example, may comprise LiCoO2, LiMn2O4, LiMnO2, LiNiO2, LiFePO4, LiVO2, or any mixture or chemical derivative thereof. The cathode 210, for example, in one embodiment, may be between about 0.5 μm and about 200 μm thick. In a preferred embodiment, the cathode 210, for example, may be between about 5 and about 100 μm thick. In a most preferred embodiment, for example, the cathode 210 may be between about 30 to about 80 μm thick.


As shown in FIG. 2, an electrolyte layer 220 may be deposited on the top surface of the cathode layer 210. The electrolyte layer may, for example, comprise lithium phosphorus oxynitride (LiPON) or other solid state thin-film electrolytes such as LiAlF4, as discussed in U.S. Pat. No. 4,367,267, or Li3PO4 doped Li4SiS4, as discussed by Yamamura et al. in U.S. Pat. No. 5,217,826. Both of these patents are incorporated herein in their entirety by reference. This electrolyte layer 220 may, for example, be less then about 10 μm thick.


The cathode 210 is thick when compared to the relative sizes of the electrolyte 220, substrate 200, and an anode 230 formed over the electrolyte 220. In other embodiments, the relative size of the cathode 210 is also thick in comparison to the anode current collector 240, as well as a thin-film encapsulation 250.


The electrolyte 220 may be deposited on the cathode 210 using a variety of methods. These methods may include, for example, vacuum vapor phase growth methods or non-vapor phase methods. Vacuum vapor phase methods may include, for example, reactive or non-reactive RF magnetron sputtering, reactive or non-reactive DC diode sputtering, reactive or non-reactive thermal (resistive) evaporation, reactive or non-reactive electron beam evaporation, ion-beam assisted deposition, plasma enhanced chemical vapor deposition or the like. Non-vapor phase methods may include, for example, spin coating, ink-jetting, thermal spray deposition or dip coating. Spin coating is discussed, for example, by Stetter et al. in U.S. Pat. No. 4,795,543; Venkatasetty in U.S. Pat. No. 4,948,490; or Schmidt et al. in U.S. Pat. No. 6,005,705. One such ink-jetting process is disclosed by Delnick in U.S. Pat. No. 5,865,860. A thermal spray deposition process is disclosed by Inda in U.S. Patent Publication No. 2004/0106046. Dip coating is discussed by Kejha in U.S. Pat. Nos. 5,443,602 and 6,134,773. Each of the above patents and patent publications is incorporated herein by reference in its entirety.


As shown in FIG. 2, the next layer on top of the electrolyte is the thin negative anode layer 230. The thin anode 230 may comprise, for example, lithium, lithium alloys, metals that can form solid solutions or chemical compounds with lithium, or a so-called lithium-ion compound that may be used as a negative anode material in lithium based batteries, such as, for example, Li4Ti5O12. The thin anode layer 230, for example, may be less than about 30 μm thick. The thin anode may make contact with the anode current collector 240, which can be accessed electrically through an opening 260 in the encapsulation 250. In one embodiment the anode current collector is less than about 2 μm thick. The thin-film encapsulation 250, for example, may be electrically conducting in certain areas and thus may, in some embodiments, serve as an anode current collector. In such embodiments, a separately deposited anode current collector 240 would not be necessary. The thin-film encapsulation 250 may, for example, be less than about 250 μm thick.


The cathode 210 in FIG. 2 may be deposited on the substrate 200 using a variety of deposition methods. In one specific embodiment, the cathode material 210 is deposited using a non-vapor phase deposition method. Non-vapor phase deposition methods are not performed in a vacuum environment. A number of non-vapor phase deposition methods are known in the art. A few exemplary methods include, slurry coating, Meyer rod coating, direct and reverse roll coating, doctor blade coating, spin coating, electrophoretic deposition, sol-gel deposition, spray coating, dip coating, and ink-jetting, to name a few. Any other non-vapor phase deposition methods or methods that do not require deposition in a vacuum may be used without deviating from the spirit, scope or embodiments of the present invention. These non-vapor phase, non-vacuum deposition methods may produce a single phase cathode or a composite cathode. The composite cathode may be deposited either on a nanoscopic, microscopic , or milliscopic scale and may consist of organic and/or inorganic matter which, in addition, may be polymerized, such as poly(vinyl pyrrolidone), sulfur nitride (SN)x, nano-tubed carbon or acetylene black.


All of the depositions mentioned herein, may, for example, be followed by a drying step with temperatures below about 150° C., and/or a low-temperature drying and adhesion improving step with temperatures between about 150° C. to about 400° C., and/or a high temperature anneal step ranging from about 400° C. to about 1000° C. These steps may help, for example, in drying, improving adhesion, formation of the correct film phase, and/or crystallization. The cathode deposition material may be used either in pure form or mixed with binder material, with or without carbon-type, metal-type or alloy-type electrical conduction enhancers. When the cathode material comprises a mixed form rather than a pure form, such cathode materials may be composite cathode materials.


The method of slurry coating has been used in battery fabrication as shown, for example, by Hikaru et al. in U.S. Pat. No. 6,114,062, or by Kinsman in U.S. Pat. No. 4,125,686, which are incorporated herein in the entirety by reference. Slurry coating may lead to the deposition of a composite electrode consisting of the electrochemical active material, which is in the form of finely dispersed powder particles that are bonded together using a polymeric binder and some form of electrical conduction enhancer, such as carbon black or the like. Also, the slurry contains solvents which need to be evaporated and/or pyrolyzed after film deposition.


According to an exemplary embodiment, a composite cathode may be deposited from slurry including or consisting of fully crystalline LiCoO2 powder, a polyimide binder, and a graphite electrical conduction enhancer. This slurry may then be coated onto an Al foil substrate and dried at temperatures below about 150° C. in ambient air for less than about 2 days. Subsequently, in this embodiment, the cathode may be coated, for example, with an about 2 μm LiPON thin-film electrolyte, an about 3 μm thick Li negative anode, and an about 0.3 μm thick Cu anode current collector. Finally, an about 100 μm thick heat and pressure sensitive metal-polymer laminate, which may serve to encapsulate the electrochemical device, may be applied to the electrochemical device so that the electrochemical performance of the device may be tested in the ambient.


In an exemplary another embodiment, the dried slurry coating may require an additional drying, adhesion, formation, and/or crystallization steps at temperatures up to about 1000° C., as described above, to finalize the structure of the cathode or composite cathode. This method is quick, simple and can produce thick cathodes without using a vacuum vapor phase method. Furthermore, the resulting cathode does not have the mechanical instability as those produced by vacuum vapor phase deposition methods.


The cathode 210 in FIG. 2 may be modified as shown, for example, in FIG. 14 through mechanical displacement or removal means including embossing, stamping, abrading scraping, forming and the like. This layer modification may be performed on either the wet or completely dried cathode. The cathode may be vacuum vapor phase grown, or fabricated by a non-vapor phase method, and then may be mechanically embossed or otherwise formed into structures that increase its surface area within the same previously coated footprint, but with resulting increased maximum thickness and decreased minimum thickness. FIG. 2 shows cathode 210 as a flat surface. As shown in FIG. 14, cathode 210 may be formed to create vertical structures, both humps and troughs. For example, embossing creates troughs or valleys protruding downward into the cathode layer, but not reaching the base of cathode 210 such that the height of cathode 210 in such troughs remain non-zero, and vertical humps or walls extend upward from the base of cathode 210. This structure or architecture minimizes the average distance of any volume element inside the cathode relative to the neighboring solid state thin-film electrolyte layer, which, unlike in electrochemical devices with gel or liquid type electrolytes, typically does not intimately penetrate the cathode bulk. Therefore, minimizing the average distance of any volume element inside the cathode relative to the solid state thin-film electrolyte reduces the ionic diffusion lengths during operation of the electrochemical device. This cathode surface modification improves the ion transfer efficiency between the cathode bulk and the thin-film electrolyte, for example, consisting of a LiPON layer (not shown), and thus improves the power performance of the electrochemical device.


Further improvement in power capability may be accomplished when cathode 210 comprises a composite material including or consisting of at least the electrochemically active cathode material, for example LiCoO2, and a carbonaceous electronic conduction enhancer, which serves to minimize the electronic diffusion lengths inside the composite cathode bulk.



FIG. 3 shows a cross-sectional view of a scanning electron micrograph showing an exemplary LiPON coated composite cathode. The dimension calibration bar at the very left side in the left picture is about 9 μm long; and the one in the insert picture on the right side represents a length of about 3 μm.


An electrochemical cycling performance of an electrochemical device according to an exemplary embodiment of the present invention is shown in FIG. 4.


According to an exemplary embodiment of the invention, a composite cathode may be deposited by Meyer rod coating of a viscous suspension or solution containing, for example, LiCoO2 powder, as described by Principe et al. in U.S. Pat. No. 6,079,352, which is incorporated herein by reference in its entirety. Alternatively, a polymeric binder, such as, for example, a polyimide, and/or an electrical conduction enhancer, such as graphite, may be admixed. This coating on a substrate, such as an Al foil substrate, may then be dried at temperatures below, for example, about 150° C. in air for less than about 2 days. Subsequently, in this embodiment the cathode may be coated, for example, with an about 2 μm LiPON thin-film electrolyte, an about 3 μm thick Li negative anode, and an about 0.3 μm thick Cu anode current collector. Finally, an about 100 μm thick heat and pressure sensitive metal-polymer laminate, which may serve to encapsulate the electrochemical device, may be applied to the electrochemical device so that the electrochemical performance of the device may be tested in the ambient.


In an exemplary embodiment, a dried Meyer rod coating may require an additional drying, adhesion, formation, and/or crystallization steps at temperatures up to, for example, about 1000° C., as described above, to finalize the structure of the cathode or composite cathode. This method is quick, simple and can produce thick cathodes without using a vacuum vapor phase method. Furthermore, the resulting cathode does not have the mechanical instability as those produced by vacuum vapor phase deposition methods.


According to an exemplary embodiment of the invention, a composite cathode may be deposited by direct and/or reverse roll coating of a viscous suspension or solution, containing, for example, LiCoO2 powder as described by Davis et al. in U.S. Pat. No. 3,535,295, which is incorporated herein by reference in its entirety. Alternatively, a polymeric binder, such as, for example, a polyimide, and/or an electrical conduction enhancer, such as graphite, may be admixed. This coating onto a substrate, such as an Al foil substrate, may then be dried at temperatures below about 150° C. in ambient air for less than about 2 days. Subsequently, in this embodiment, the cathode may be coated, for example, with an about 2 μm LiPON thin-film electrolyte, an about 3 μm thick Li negative anode, and an about 0.3 μm thick Cu anode current collector. Finally, an about 100 μm thick heat and pressure sensitive metal-polymer laminate, which may serve to encapsulate the electrochemical device, may be applied to the electrochemical device so that the electrochemical performance of the device may be tested in the ambient.


In an exemplary embodiment, a dried direct or reverse roll coated deposit may require an additional drying, adhesion, formation, and/or crystallization steps at temperatures up to, for example, about 1000° C., as described above, to finalize the structure of the cathode or composite cathode. This method is quick, simple and can produce thick cathodes without using a vacuum vapor phase method. Furthermore, the resulting cathode does not have the mechanical instability as those produced by vacuum vapor phase deposition methods.


According to an exemplary embodiment of the invention, a thick cathode may be deposited on a substrate via a doctor blade technique as disclosed by Brown in GB Patent No. 947518, which is incorporated herein in its entirety by reference. This deposition method is analogous to spreading butter. Accordingly, for example, a fine blade slices into some cathode material paste, consisting of the electrochemically active material, in precursor or final form, mixed with solvents, binders, and potentially electrical conduction enhancer materials, and then spreads the cathode material paste under a certain thickness directly onto a substrate. Depending on the formulation of the cathode material paste, additional drying, adhesion, formation and/or crystallization steps at temperatures of up to about 1000° C., as described above, may be used to form the final cathode or composite cathode. This method is quick, simple and can produce thick cathodes without using a vacuum vapor phase method. Furthermore, the resulting cathode does not have the mechanical instability as those produced by vacuum vapor phase deposition methods.


Spin coating is used in the thin-film coating industry, using a variety of standard spin coaters offered by many well-known manufacturers, such as Hitachi disclosed in JP Patent No. 1320728 and incorporated herein by reference in its entirety. Using a spin coating technique, a cathode powder is suspended or dispersed in a solvent of a low boiling point (high volatility), such as, for example, water, low-molecular mass alcohols, low-molecular mass ethers, low-molecular mass ketones, low-molecular mass esters, low-molecular mass hydrocarbons, etc. This suspension may then be dropped onto a fast spinning substrate (typically about 1000-3000 rpm) and is thus spread out quickly into a thin-film over the substrate due to the high centrifugal forces exerted on the droplets. Because of the extremely low mass or volume per unit area, thin-films of a volatile solvent evaporate quickly leaving the solute or suspended or dispersed material precipitated on the substrate. The spin coating process may be repeated multiple times so as to increase the thickness of a given film. To further the evaporation process of the solvent and the precipitation of the solute, or suspended or dispersed material, the spinning substrate may be heated. Alternatively, the spin coating suspension may additionally contain binder material or binder precursor material as well as electrical conduction enhancer material. All of these materials do not and are not intended to evaporate during the spin-coating process, either conducted at ambient conditions or at elevated temperatures, as described above, and/or vacuum. Depending on the spin coating suspension formulations, an additional drying, adhesion, formation, and/or crystallization step at temperatures of up to about 1000° C., as described above, may be required to form the final cathode or composite cathode.


According to an exemplary embodiment of the present invention, a non-vapor phase LiCoO2 cathode film may be developed using electrophoretic deposition as discussed by Kanamura et al. in 3 Electrochem. Solid State Letters 259-62 (2000) or by Lusk in GB Patent No. 1298746, both of which are incorporated herein by reference in their entirety. For example, micron size, fully crystallized LiCoO2 particles may be suspended in a solution of acetone, isopropanol, and/or iodine and may enable the electrophoretic deposition of, for example, an about 9 μm thick, fully crystalline LiCoO2 cathode film onto stainless steel substrate without any columnar structure. This process may be performed, for example, at less than about 120VDC within about 30 minutes at room temperature.



FIG. 5 depicts a scanning electron micrograph of an exemplary positive cathode film in cross-sectional view deposited with electrophoretic deposition. The potential iodine impurity concentration of the film shown in the figure is below the detection limits (<1 wt %) of the energy dispersive x-ray spectroscopic method employed. Electrochemical cells may also be fabricated with thinner LiCoO2 composite cathodes by electrophoretic deposition, for example, in a solution consisting of about 200 ml acetone, about 23 mg I2, about 38 mg carbon black, and about 53 mg poly(tetrafluoroethylene) (PTFE) into which about 1 g of fully crystalline LiCoO2 particle powder was suspended. In such an embodiment, the driving voltage of 50VDC for this electrophoretic deposition may be applied, for example, for about 30 seconds. Following which, the so-deposited LiCoO2 composite film may be annealed at approximately about 377° C. in air for about 4 hours to improve adhesion to the conductive substrate. Subsequently, the fabrication of the electrochemical device may be completed by depositing an about 2 μm thick LiPON electrolyte using RF magnetron sputter over the LiCoO2 composite cathode, then fabricating approximately about 0.3 μm thick Cu anode current collector film by electron beam evaporation, which may then be followed by a thermal (resistive) vacuum deposition of an about 3 μm thick metallic Li anode. The current-discharge voltage performance of such an electrochemical device is presented in FIG. 6, while its electrochemical cycle stability is shown in FIG. 7. Depending on the formulation of the electrophoretic suspension, an additional drying, adhesion, formation, and/or crystallization step at temperatures of up to about 1000° C., as described above, may be required to form the final cathode or composite cathode.


According to an exemplary embodiment, a thick cathode may be deposited using a sol-gel method. In this embodiment, for example, an oxidic cathode film material to be deposited is provided in a precursor state, such as aqueous or alcoholic sols or gels of lithium and cobalt ions that are electrically balanced by anionic counter ions or chelates. These anionic counter ions or chelates may comprise, for example, nitrate, glycolate, hydroxide, citrate, carboxylates, oxalate, alcoholate, or acetylacetonate. Such formulations may be dip coated or sprayed onto the substrate and then dried at elevated temperatures for extended periods of time, for example, less than 2 days. In addition, the so-fabricated films may be subjected to a high-temperature pyrolysis process so as to convert the anionic counter ions or chelates quantitatively into pure oxides. This method is discussed in the Ph.D Thesis of Bernd J. Neudecker, Stuttgart, Germany (1994); by Plichta et al., in 139 J. Electrochem. Soc. 1509-13 (1992); and by Nazri, U.S. Pat. No. 5,604,057. Alternatively, the sol-gel may additionally contain binder material or binder precursor material, as well as electrical conduction enhancer material. All of these additives do not, and are also not intended to evaporate during the drying process, either done at ambient conditions or at elevated temperatures, as described above, and/or vacuum. Depending on these sol-gel formulations, an additional drying, adhesion, formation, and/or crystallization step at temperatures of up to about 1000° C., as described above, may be required to form the final cathode or composite cathode.


In an exemplary embodiment of the present invention, the thick cathode may be deposited using an ink-jet method. Ink-jetting of oxide film electrodes is discussed by Watanabe Kyoichi et al. in JP 2005011656, Speakman in U.S. Pat. No. 6,713,389 and Hopkins et al. in U.S. Pat. No. 6,780,208, which are incorporated herein in their entirety by reference. In one embodiment of the present invention, fully crystallized LiCoO2 powder may be milled to about 0.55 μm in average particle size, and then dispersed in an aqueous solution of about 0.05 vol % iso-octanol, about 5 vol % isopropanol, about 10 vol % ethylene glycol monobutyl ether, and about 10 vol % ethylene glycol. This solution may then be sonicated for about 1 hour to form a suitable ink-jet solution. The LiCoO2 films may then be deposited through a print head and wetted ceramic, for example, about 250 μm thick Al2O3 plates, and a stainless steel substrates well, for example, an about 50 μm foil. Subsequent to the printing, the as-deposited LiCoO2 films may be dried in air at about 200° C. for about 2 hours in order to drive off excess solvent and improve the adhesion of the LiCoO2 film to its substrate. A dried LiCoO2 film thickness of about 15 μm may be achieved based on ten print head passes over the same substrate region. A cross-sectional scanning electron micrograph view of such a LiCoO2 film is shown in FIG. 8. Alternatively, the ink-jet solution or suspension may contain binder material, binder precursor material, and/or electrical conduction enhancer material. If used, each of these materials do not, and are also not intended to evaporate during the drying process, whether at ambient conditions or at elevated temperatures, as described above, and/or in a vacuum. Depending on these formulations of the ink-jet solution or suspension, an additional drying, adhesion, formation, and/or crystallization step at temperatures of up to about 1000° C., as described above, may be required to form the final cathode or composite cathode.


According to an exemplary embodiment, a cathode fabricated by a non-vapor phase deposition may be coated, in its finished or unfinished state, for example, with an inert, metallically conducting layer, such as gold. Subsequently, a finished or unfinished cathode and an inert, metallically conducting coating may be, for example, heated together for further drying, adhesion, formation, and/or crystallization during which processes the inert, metallically conducting coating may be substantially absorbed into the pores, voids, and crevices of the cathode, thus improving the electrical conduction of the cathode.


The anode in the exemplary embodiments described above may be deposited using a variety of methods. For example, the anode material may be deposited using a vacuum vapor phase growth method, or a non-vapor phase growth method, such as ink-jetting or dip coating.


An exemplary embodiment of the present invention includes depositing a negative anode material via a vacuum vapor phase growth method. Typical vapor phase growth methods for negative anodes include, but are not limited to, reactive or non-reactive RF magnetron sputtering, reactive or non-reactive DC diode sputtering, reactive or non-reactive thermal (resistive) evaporation, reactive or non-reactive electron beam evaporation, ion-beam assisted deposition, or plasma enhanced chemical vapor deposition. The negative anode may either be, for example, metallic lithium, a lithium alloy, or a metal that can form a solid solution or a chemical compounds with lithium.


Other exemplary embodiments may include non-vapor phase growth methods for depositing a negative anode. For example, non-vapor phase growth methods, such as ink-jetting of metallic lithium powder mixtures may be used to deposit a negative anode. Such methods are described by Nelson et al. in U.S. Patent Publication No. 2005/0239917. As well, for example, one could simply dip a sample into molten lithium under a protective atmosphere and allow the resulting film on the sample to cool and solidify. Analogously, one may fabricate a lithium-ion anode, such as metallic tin, by dipping a sample into molten tin under air atmosphere or transfer the molten or hot tin on a flattened face of a, for example, rod and then stamp the tin onto the sample.


A dip coating technique via sol-gel route may similarly work for depositing negative anode materials as described, for example, by Patrusheva et al. in RU Patent No. 2241281C2, which is incorporated herein by reference in its entirety. For example, SnO2 based Li-ion anodes using suitable anionic formulations of alkoxides may be used, as described by Toki Motoyuki in U.S. Pat. No. 6,235,260, which is also incorporated herein by reference in it entirety.



FIG. 9 shows an exemplary hybrid thin-film electrochemical device fabricated without a substrate according to an embodiment of the present invention. This device is similar to that shown in FIG. 2, but does not have a substrate. Instead, the device is spatially terminated by a thin metal layer 300 that may be used, for example, as a current collector and electrical terminal. In addition to this thin metal layer 300, the device in FIG. 9 comprises at least a cathode 310, an electrolyte 320, and an anode 330.


The embodiments described above may be encapsulated using an encapsulation 350 selected from the group consisting of vacuum vapor phase grown thin-film encapsulation, pressure-heat lamination of protective polymer composites as described by Snyder et al. in U.S. Pat. No. 6,916,679, pressure-heat lamination of metal foils coated with pressure-heat sensitive adhesive surfaces, and metal canning.


An anode current collector 340, such as Zr may be interposed between the electrolyte 320, the anode 330, and the encapsulation 350. Furthermore, a moisture barrier may be applied between the anode current collector 340 and the underlying moisture sensitive electrolyte 320 to protect latter from the environment. A material having moisture blocking properties may be selected: a) from the group of metals, semi-metals, alloys, borides, carbides, diamond, diamond-like carbon, silicides, nitrides, phosphides, oxides, fluorides, chlorides, bromides, iodides; b) from the group of any multinary compounds composed of borides, carbides, silicides, nitrides, phosphides, oxides, fluorides, chlorides, bromides, and iodides; or c) from the group of high-temperature stable organic polymers and high-temperature stable silicones. This moisture barrier, for example, may comprise ZrO2 or ZrN and may be part of the anode current collector 340 that may be gradiented in terms of its oxide or nitride content thus reaching a stoichiometry of ZrO2 or ZrN near the interface to the electrolyte.



FIG. 10 shows an embodiment of an electrochemical device with a multilayer thin-film encapsulation material. The multilayer thin-film encapsulation 400 may be comprised, for example, of multiple strong metallic getter layers 410 with alternating amorphous or glassy oxide or nitride layers 420 thereof. The strong metallic getter layers 410 are used to protect the device from moisture and oxygen based on their superior gettering ability for H2O and O2. The strong metallic getter layers may, for example, be comprised of Zr, Y, Ti, Cr, Al, or any alloy thereof. The glassy or amorphous layers 420 may be the oxides or nitrides of the metal or metals used in the getter layers, such as, for example, ZrO2, ZrN, Y2O3, YN, TiO2, TiN, Cr2O3, CrN, Al2O3, AlN, or any multi-element compound thereof. The mechanically dense glassy or amorphous layers being substantially free of grain boundaries may, for example, effectively block any moisture or oxygen diffusion through said oxides or nitrides. As a result, the multilayer thin-film encapsulation may effectively protect the underlying, air sensitive metallic anode.


In another exemplary embodiment, for example, the multilayer thin-film encapsulation consists of inorganic high-temperature stable or resilient materials. Using such an encapsulation increases the high temperature stability of the electrochemical device as compared with an electrochemical device that employs polymeric components in its encapsulation, such as is the case in the above-mentioned pressure-heat laminated encapsulation described by Snyder et al. in U.S. Pat. No. 6,916,679.


Another exemplary embodiment of inorganic high-temperature stable or resilient materials may include a multilayer thin-film encapsulation having vacuum vapor phase deposited alternating layers. For example, a thin-film encapsulation may comprise or consist of 30 alternating 1000 Å thick layers of the sequence ZrO2 /Zr/ZrO2 /Zr/ . . . or ZrN/Zr/ZrN/Zr/ . . . , although it is to be understood that different sized thickness, periods and materials may be used. These alternating layers may be deposited at less than about 100° C. substrate temperature in one vacuum chamber pump-down from ambient pressures, for example. Such an exemplary 30 multilayer thin-film encapsulation may, for example, be only about 3 μm thick and high-temperature stable to far above about 300° C.


As those skilled in the art will appreciate, the mere thinness of such a thin-film encapsulation directly increases the energy, capacity, and power of a given electrochemical device per unit volume (volumetric energy, volumetric capacity, and volumetric power) compared with an electrochemical device that uses a pressure-heat laminated encapsulation, which is typically thicker by at least one order of magnitude than the presented thin-film encapsulation of about 3 μm. For example, the volumetric quantities of energy, capacity, and power can increase three-fold when for a given electrochemical device of, for example, 150 μm in total packaged thickness, which may comprise an actual electrochemical cell of, for example, 10 μm in thickness, a, for example, 35 μm thick substrate, and a, for example, 100 μm thick pressure-heat laminate, the encapsulation is replaced by a thin-film encapsulation of, for example, 3 μm in thickness, which results in an overall thickness of the electrochemical device of 48 μm.



FIG. 11 shows an electrochemical device according to an exemplary embodiment of the present invention. In addition to the electrically conductive substrate 500, the positive cathode 510, the electrolyte film 520, the negative anode 530, the anode current collector 540, and the electrical insulation layer 550, this embodiment includes an encapsulation layer 570. This encapsulation may be, for example, a multilayer encapsulation as described above and as shown in FIG. 10. Between the encapsulation layer 570 and the anode 530, for example, a second LiPON layer 560 may be interposed. The encapsulation layer 570 may be fabricated onto the anode 530, which may comprise metallic lithium. The softness of the anode 530 material may cause the encapsulation layer 570 to crack due to the mechanically weak fundament provided by the soft anode 530 and/or the stress imbalance at the interface of the anode 530 encapsulation 570. Once cracked, the encapsulation 570 may cause exposure of the sensitive anode 530 to the ambient, which may destroy the anode. Using a glassy LiPON (or derivative) modulator layer 560, for example, may mechanically stabilize the soft anode surface while chemically encapsulating it.



FIG. 11, the cathode 510 may be thick when compared to the relative sizes of the electrolyte 520, substrate 500 (and cathode current collector in some embodiments), anode 530, anode current collector 540, electrical insulation layer 550, modulating LiPON layer 560, and thin-film encapsulation 570.


The underlying LiPON electrolyte layer 520 together with the overlying LiPON modulator layer 560 confine the interposed anode 530 while protecting it, not only mechanically, but also chemically. In this configuration, a metallic anode 530, such as, for example, metallic Lithium, may be melted when heated above its melting point at about 181° C. Due to its spatial confinement, chemical protection, and inertness towards LiPON well above the melting point of lithium, the metallic lithium anode 530 remains fixed at location and intact as a negative anode material inside of the described electrochemical device. This engineering design also enables the described electrochemical device being used in solder reflow processing or flip chip processing.


Many materials may be used as the anode, for example, copper lithium alloy or solid solutions, such as, LixCu, LixZr, LixV, LixW, LixBe, LixBeyCu, etc. Those skilled in the art will recognize these and other materials that may be used for the anode. These alloys or solid solutions of lithium may offer stronger mechanical properties compared with soft metallic lithium, and thus may allow the direct deposition of the multilayer thin-film encapsulation 570 without the use of the above-described LiPON modulator layer 560 interposed between the soft negative metallic anode 530 and the multilayer thin-film encapsulation 570. In such case, the LiPON modulator layer 560 may be redundant.


In an example of the embodiment shown in FIG. 11, an electrochemical device may be fabricated, for example, onto a 25.4 mm×25.4 mm large aluminum substrate of 25 μm in thickness (500), coated with a 80 μm×3.3 cm2 large LiCoO2 composite positive cathode consisting of 62 volume % of LiCoO2 powder and the volume balance of polymeric binder and electronically conducting carbon black powder (510), a 1.5 μm thin film of solid state LiPON electrolyte (520), a 10 μm thick negative, metallic lithium anode (530), a 0.5 μm thick nickel anode current collector (540), a 0.5 μm thick ZrO2 electrical insulation layer (550), a 0.5 μm thick LiPON modulator layer (560), and a 3 μm thick multilayer thin-film encapsulation layer consisting of fifteen 1000 Å thick Zr/1000 Å thick ZrO2 bi-stacks (570). In this example, the electrochemical device is 120 μm thick at its thickest cross-section and provides 10 mAh of continuous capacity within the voltage range of 4.2-3.0 V with an average voltage of 4.0 V, which results in a volumetric energy of 520 Wh/liter for the fully packaged electrochemical device. When using a 10 μm aluminum substrate instead of the 25 μm thick one, then the volumetric energy of this device increases from 520 Wh/liter to 590 Wh/liter.


In another exemplary embodiment, a barrier layer may be included. This barrier layer may be deposited onto a substrate, such as, for example, a metal foil substrate, wherein the barrier layer chemically separates the battery part (i.e., electrochemically active cell) from the substrate part of an electrochemical apparatus. The barrier may prevent diffusion of any contaminants entering the battery from the substrate as well as, for example, block ions from escaping the battery and diffusing into the substrate during both battery fabrication and during battery operating and storage conditions. Certain potentially suitable materials for a barrier layer may include poor ion conducting materials, for example, such as borides, carbides, diamond, diamond-like carbon, silicides, nitrides, phosphides, oxides, fluorides, chlorides, bromides, iodides, and any multinary compounds thereof. Of those compounds, electrically insulating materials may further prevent possible reactions between the substrate and the battery layers from occurring. For example, if a possible chemical reaction includes the diffusion of ions and electrons, an insulating barrier would provide a way to block the electrons, and thus prevent any such chemical reaction. However, a barrier layer may comprise electrically conducting materials as well, as long as they do not conduct any of the ions of the substrate or battery layer materials. For instance, ZrN is an effective conducting layer that will prevent ion conduction. In some cases metals, alloys, and/or semi-metals may serve as a sufficient barrier layer depending on the anneal temperatures applied during the battery fabrication process and substrate material used. The diffusion barrier layer may, for example, be single or multi-phase, crystalline, glassy, amorphous or any mixture thereof, although glassy and amorphous structures are preferred in some applications due to their lack of grain boundaries that would otherwise serve as locations for increased, but unwanted, ion and electron conduction.


A thin-film encapsulation layer, such as the one shown in FIGS. 10 & 11, may, for example, tent over the device. Therefore, a flexible encapsulation may, for example, be used to allow the device to expand and contract. The above-described glass-metal multilayer encapsulation possesses appropriate flexible properties, which can be tailored, for example, by changing the sputter deposition parameters, which then changes the densities of the glass and/or metal. Another approach to tuning the mechanical properties of the constituents of the thin-film encapsulation, and thus also the thin-film encapsulation itself may include changing the stoichiometry of one or more constituents of the thin-film encapsulant. For instance, ZrN can be changed to Zr2N, which is equivalent to depriving the particular composition of this layer of nitride. Alternatively, one can change the metals in the stack. For example, instead of a Zr, ZrN, Zr, ZrN stack, one could fabricate a multilayer thin-film encapsulation consisting of Zr, AlN, Cr, TiN.


Some of the embodiments above discuss a thick positive cathode that is inexpensive and reliable. The thick cathode may also be configured with a thin electrolyte, a thin anode, and a thin encapsulation so as to maximize the volumetric densities of capacity, energy, and power of the resulting electrochemical device.



FIG. 12 shows another embodiment of the present invention, which depicts a configuration variant of the electrochemical device shown in FIG. 2 and termed inverted thin-film battery configuration. The negative anode 610 is chosen from the same materials and fabricated by the same methods as described for FIG. 2, when deposited directly onto substrate 600, which in turn is electrically conducting and chemically inert, such as, for example, Cu foil, to the anode 610. In this particular configuration, the substrate also serves as the anode current collector and negative terminal of a battery. If the substrate 600 is electrically insulating, then an additional anode current collector, consisting of, for example, Cu or Ni, may be interposed between said substrate 600 and the negative anode 610 (not shown). Electrical access to this anode current collector may be accomplished, for example, by either extending the anode current collector beyond the edge of the encapsulation 650 or providing an opening in the substrate 600. The opening in the substrate may then be filled with a conductive material, such as a Cu paste, in a manner that this material makes electrical contact with the anode current collector. Using the same materials and methods as for the electrolyte in FIG. 2, the electrolyte 620 is deposited over the anode 610. Using the same materials and methods as for the positive cathode in FIG. 2, the positive cathode 630 is deposited over the electrolyte 620. To allow electrical access to the positive cathode 630, a cathode current collector 640, such as Al or Au, is fabricated on top of the positive cathode 630. If encapsulation 650 is used on an electrochemical device, then one may provide an opening 660 in encapsulation 650 to allow electrical access to the positive cathode 630.


Analogously, an electrochemical device may be fabricated with inverted thin-film battery configuration using the elements, materials and methods described in regard to FIG. 11. Such an electrochemical device, for example, is shown in FIG. 13. First, a negative anode 710 is directly deposited onto a chemically inert substrate 700. To avoid short-circuiting of an electrochemical device, an electrically insulating layer 750 may be fabricated, which may be partially coated with an electrolyte 720 and may entirely tent over the anode 710. After depositing the electrolyte 720, the positive cathode 730 may be deposited followed by a cathode current collector 740. To employ a thin-film encapsulation 770 over the existing layers in the fabrication sequence of the electrochemical device, a mechanical and chemical modulation layer 760, for example, may be applied mainly over that area in the battery part of the electrochemical device which is defined by the cathode. Those skilled in the art will appreciate that the invention covers additional inverted configurations, which may be achieved by way of combining constituent parts of the non-inverted batteries described above.


In another embodiment, a barrier layer may be fabricated between the substrate and the battery part of the electrochemical device as described in U.S. patent application Ser. No. 11/209,536, entitled Electrochemical Apparatus with Barrier Layer Protected Substrate, filed 23 Aug. 2005, and incorporated by reference herein in its entirety. Depending on the material and configuration of the barrier layer, one or more additional current collectors may be fabricated onto the barrier layer so as to improve the electrical contact to the positive cathode, the negative anode or both.


The embodiments described above are exemplary only. One skilled in the art may recognize variations from the embodiments specifically described here, which are intended to be within the scope of this disclosure. As such, the invention is limited only by the following claims. Thus, it is intended that the present invention cover the modifications of this invention provided they come within the scope of the appended claims and their equivalents. Further, specific explanations or theories regarding the formation or performance of electrochemical devices according to the present invention are presented for explanation only and are not to be considered limiting with respect to the scope of the present disclosure or the claims.

Claims
  • 1. An electrochemical device comprising: a non-vapor phase deposited positive cathode greater than about 0.5 μm thick and less than about 200 μm thick;a layer on the positive cathode;a vapor phase deposited electrolyte less than about 10 μm thick deposited over the layer on said positive cathode;a negative anode less than about 30 μm thick is positioned directly on the vapor phase deposited electrolyte.
  • 2. The electrochemical device of claim 1, further comprising a substrate.
  • 3. The electrochemical device of claim 2, wherein the cathode is adjacent to the substrate.
  • 4. The electrochemical device of claim 2, further comprising said substrate of up to about 50 μm in thickness.
  • 5. The electrochemical device of claim 2, further comprising said substrate of up to about 10 μm in thickness.
  • 6. The electrochemical device of claim 2, wherein said substrate is selected from the group of aluminum and aluminum alloys.
  • 7. The electrochemical device of claim 2, wherein said substrate comprises a current collector.
  • 8. The electrochemical device of claim 2, further comprising a barrier layer on said substrate.
  • 9. The electrochemical device of claim 8, wherein said barrier layer is adapted to prevent electrons from migrating between the substrate and either the anode or cathode.
  • 10. The electrochemical device of claim 8, wherein said barrier layer is adapted to prevent ions from migrating between the substrate and either the anode or cathode.
  • 11. The electrochemical device of claim 1, further comprising a current collector.
  • 12. The electrochemical device of claim 1, wherein said cathode is greater than about 5 μm and less than about 100 μm thick.
  • 13. The electrochemical device of claim 1, wherein said cathode is greater than about 30 μm and less than about 80 μm thick.
  • 14. The electrochemical device of claim 1, wherein said electrolyte is a thin-film electrolyte.
  • 15. The electrochemical device of claim 1, wherein said cathode is deposited by slurry coating cathode powder material, binder material, and electrical conduction enhancer material.
  • 16. The electrochemical device of claim 1, wherein said cathode is deposited using a Meyer rod coating technique.
  • 17. The electrochemical device of claim 1, wherein said cathode is deposited using a direct roll coating technique.
  • 18. The electrochemical device of claim 1, wherein said cathode is deposited using a reverse roll coating technique.
  • 19. The electrochemical device of claim 1, wherein said cathode is deposited using a doctor blade technique.
  • 20. The electrochemical device of claim 1, wherein said cathode is deposited by spin coating.
  • 21. The electrochemical device of claim 1, wherein said cathode is deposited by electrophoretic deposition.
  • 22. The electrochemical device of claim 1, wherein said cathode is deposited by an ink-jetting process.
  • 23. The electrochemical device of claim 1, wherein said cathode comprises pores, voids or crevices and a material selected from the group of inert metal, inert alloy, and carbonaceous material provided in said pores, voids or crevices of said cathode.
  • 24. The electrochemical device of claim 1, wherein said cathode comprises LiCoO2 or a derivative thereof.
  • 25. The electrochemical device of claim 24, wherein said LiCoO2 or derivative thereof is doped with elements selected from the group of elements from Groups 1 through 17 of the periodic table.
  • 26. The electrochemical device of claim 1, wherein said cathode comprises a material from the group consisting of LiCoO2, LiMn2O4, LiMnO2, LiNiO2, LiFePO4, LiVO2, and any mixture thereof.
  • 27. The electrochemical device of claim 1, wherein said cathode is formed into a structure with a plurality of vertical structures.
  • 28. The electrochemical device of claim 27, wherein the plurality of vertical structures are formed using mechanical means.
  • 29. The electrochemical device of claim 27, wherein the vertical structures have a height less than a maximum thickness of the cathode material.
  • 30. The electrochemical device of claim 27, wherein said plurality of vertical structures are configured to decrease the average distance between any volume element within said cathode and the closest volume element of said electrolyte layer that is opposite to said cathode.
  • 31. The electrochemical device of claim 1, wherein said cathode is a composite cathode further comprising at least carbonaceous material.
  • 32. The electrochemical device of claim 31, wherein said composite cathode has a shape including a plurality of vertical structures.
  • 33. The electrochemical device of claim 32, wherein said plurality of vertical structures are configured to decrease the average distance between any volume element within said cathode and the closest volume element of said electrolyte layer that is opposite to said cathode.
  • 34. The electrochemical device of claim 1, wherein said electrolyte comprises lithium phosphorus oxynitride (LiPON).
  • 35. The electrochemical device of claim 1, wherein said anode is selected from lithium, lithium alloy, a metal that can form a solid solution or a chemical compound with lithium, and any lithium-ion compound that can serve as a negative anode.
  • 36. The electrochemical device of claim 1, wherein said electrolyte is deposited by a vacuum vapor phase growth method directly on said positive cathode.
  • 37. The electrochemical device of claim 1, further comprising an encapsulation formed with an encapsulation process selected from vacuum vapor phase grown thin-film encapsulation, pressure-heat lamination of protective polymer composites, pressure-heat lamination of metal foils coated with pressure-heat sensitive adhesive surfaces, and metal canning
  • 38. The electrochemical device of claim 1, further comprising an encapsulation grown by a vacuum vapor phase process.
  • 39. The electrochemical device of claim 38, wherein said encapsulation consists of a multilayer stack of inorganic compounds and metals.
  • 40. The electrochemical device of claim 38, wherein said encapsulation is thinner than about 10 μm.
  • 41. The electrochemical device of claim 38, wherein said encapsulation is separated from the negative anode by an interposed modulation layer.
  • 42. The electrochemical device of claim 41, wherein said modulation layer comprises LiPON.
  • 43. The electrochemical device of claim 41, wherein said modulation layer consists of LiPON.
  • 44. The electrochemical device of claim 1, further comprising an anode current collector.
  • 45. The electrochemical device of claim 44, wherein a moisture barrier is interposed between said anode current collector and said electrolyte.
  • 46. The electrochemical device of claim 45, wherein said moisture barrier comprises a material having moisture blocking properties, and is selected from metals, semi-metals, alloys, borides, carbides, diamond, diamond-like carbon, silicides, nitrides, phosphides, oxides, fluorides, chlorides, bromides, and iodides.
  • 47. The electrochemical device of claim 45, wherein said moisture barrier comprises a material having moisture blocking properties, and is selected from any multinary compounds composed of borides, carbides, silicides, nitrides, phosphides, oxides, fluorides, chlorides, bromides, and iodides.
  • 48. The electrochemical device of claim 45, wherein said moisture barrier comprises a material having moisture blocking properties, and is selected from organic polymers and silicones.
  • 49. An electrochemical device comprising: a non-vapor phase deposited cathode;a layer on the cathodean anode; anda vapor phase deposited electrolyte less than about 10 μm thick deposited over the layer on said cathode,wherein the anode is positioned directly on the vapor phase deposited electrolyte.
  • 50. The electrochemical device of claim 49, wherein said cathode is greater than about 0.5 μm and less than about 200 μm thick.
  • 51. The electrochemical device of claim 49, wherein said cathode is greater than about 10 μm and less than about 100 μm thick.
  • 52. The electrochemical device of claim 49, wherein said cathode is greater than about 30 μm and less than about 80 μm thick.
  • 53. The electrochemical device of claim 49, wherein said anode is less than about 30 μm thick.
  • 54. The electrochemical device of claim 49, further comprising a substrate.
  • 55. The electrochemical device of claim 54, wherein said substrate has up to about a 50 μm thickness.
  • 56. The electrochemical device of claim 54, wherein said substrate has up to about 10 μm thickness.
  • 57. The electrochemical device of claim 54, wherein said substrate is selected from aluminum and aluminum alloys.
  • 58. The electrochemical device of claim 49, wherein said electrolyte is a thin-film electrolyte.
  • 59. The electrochemical device of claim 49, wherein said cathode is deposited by slurry coating cathode powder material, binder, carbonaceous material, and electronic enhancer.
  • 60. The electrochemical device of claim 49, wherein said cathode is deposited using a Meyer rod coating technique.
  • 61. The electrochemical device of claim 49, wherein said cathode is deposited using a direct roll coating technique.
  • 62. The electrochemical device of claim 49, wherein said cathode is deposited using a reverse roll coating technique.
  • 63. The electrochemical device of claim 49, wherein said cathode is deposited by a doctor blade technique.
  • 64. The electrochemical device of claim 49, wherein said cathode is deposited by spin coating.
  • 65. The electrochemical device of claim 49, wherein said cathode is deposited by electrophoretic deposition.
  • 66. The electrochemical device of claim 49, wherein said cathode is deposited by an ink jetting process.
  • 67. The electrochemical device of claim 49, wherein said cathode is substantially absorbed with a material selected from the group of inter metal, inert alloy, and carbonaceous material.
  • 68. The electrochemical device of claim 49, wherein said cathode comprises LiCoO2.
  • 69. The electrochemical device of claim 49, wherein said cathode comprises a material selected from the group consisting of LiCoO2, LiMn2O4, LiMnO2, LiNiO2, LiFePO4, LiVO2, and any mixture thereof.
  • 70. The electrochemical device of claim 49, wherein said cathode is formed through mechanical means into a structure with a multitude of smaller vertical structures.
  • 71. The electrochemical device of claim 70, wherein said multitude of smaller vertical structures decrease the average distance between any volume element within said cathode and the closest volume element of said electrolyte layer that is opposite to said cathode.
  • 72. The electrochemical device of claim 49, wherein said cathode is a composite cathode further comprising at least carbonaceous material.
  • 73. The electrochemical device of claim 72, wherein said composite cathode comprises a multitude of vertical structures.
  • 74. The electrochemical device of claim 73, wherein said multitude of vertical structures decrease the average distance between any volume element within said cathode and the closest volume element of said electrolyte layer that is opposite to said cathode.
  • 75. The electrochemical device of claim 49, wherein said electrolyte comprises Lithium Phosphorus Oxynitride (LiPON).
  • 76. The electrochemical device of claim 49, wherein said anode is selected from the group consisting of lithium, lithium alloy, a metal that can form a solid solution or a chemical compound with lithium, and any lithium-ion compound that can serve as a negative anode.
  • 77. The electrochemical device of claim 49, wherein said electrolyte is deposited directly on said cathode.
  • 78. The electrochemical device of claim 49, wherein said electrochemical device is encapsulated with a material selected from ceramic multi-layer thin-film encapsulate, polymer composite, metal foil, adhesive, and metal can.
  • 79. The electrochemical device of claim 49, wherein said electrochemical device is encapsulated with an encapsulation grown by a vacuum vapor phase process.
  • 80. The electrochemical device of claim 79, wherein said encapsulation consists of a multilayer stack of inorganic compounds and metals.
  • 81. The electrochemical device of claim 79, wherein said encapsulation is thinner than 10 μm.
  • 82. The electrochemical device of claim 79, wherein said encapsulation is separated from the negative anode by an interposed modulation layer.
  • 83. The electrochemical device of claim 82, wherein said modulation layer comprises LiPON.
  • 84. The electrochemical device of claim 82, wherein said modulation layer consists of LiPON.
  • 85. The electrochemical device of claim 49, further comprising a cathode current collector.
  • 86. The electrochemical device of claim 49, further comprising an anode current collector.
  • 87. The electrochemical device of claim 86, wherein said anode current collector covered, at least in part, by a moisture barrier.
  • 88. The electrochemical device of claim 87, wherein said moisture barrier comprises ZrO2.
  • 89. The electrochemical device of claim 1, wherein the layer is absorbed into the cathode.
  • 90. The electrochemical device of claim 49, wherein the layer is absorbed into the cathode.
RELATED APPLICATIONS

The present application claims the benefit under 35 U.S.C. §119 of U.S. Patent Application Ser. No. 60/737,613, filed Nov. 17, 2005, U.S. Patent Application Ser. No. 60/759,479 filed Jan. 17, 2006, and U.S. Patent Application Ser. No. 60/782,792, filed Mar. 16, 2006; and is a continuation-in-part, and claims the benefit under 35 U.S.C. §120, of U.S. patent application Ser. No. 11/209,536, entitled “Electrochemical Apparatus with Barrier Layer Protected Substrate,” filed 23 Aug. 2005, which is a continuation, and claims the benefit under 35 U.S.C. §120, of U.S. patent application Ser. No. 11/374,282, converted from 119(e) of U.S. provisional application Ser. No. 60/690,697, and filed on Jun. 15, 2005, entitled “Electrochemical Apparatus with Barrier Layer Protected Substrate,” which is a continuation-in-part, and claims the benefit under 35 U.S.C. §120, of U.S. patent application Ser. No. 10/215,190, filed 9 Aug. 2002, entitled “Methods of and device for encapsulation and termination of electronic devices,” now U.S. Pat. No. 6,916,679, issued 12 Jul. 2005, which are all incorporated herein by reference in their entirety.

US Referenced Citations (812)
Number Name Date Kind
712316 Loppe et al. Oct 1902 A
1712316 Loppe et al. Oct 1902 A
2970180 Urry Jan 1961 A
3309302 Heil Mar 1967 A
3616403 Collins et al. Oct 1971 A
3790432 Fletcher et al. Feb 1974 A
3797091 Gavin Mar 1974 A
3850604 Klein Nov 1974 A
3939008 Longo et al. Feb 1976 A
4082569 Evans, Jr. Apr 1978 A
4111523 Kaminow et al. Sep 1978 A
4127424 Ullery, Jr. Nov 1978 A
4226924 Kimura et al. Oct 1980 A
4283216 Brereton Aug 1981 A
4318938 Barnett et al. Mar 1982 A
4328297 Bilhorn May 1982 A
4395713 Nelson et al. Jul 1983 A
4437966 Hope et al. Mar 1984 A
4442144 Pipkin Apr 1984 A
4467236 Kolm et al. Aug 1984 A
4481265 Ezawa et al. Nov 1984 A
4518661 Rippere May 1985 A
4555456 Kanehori et al. Nov 1985 A
4572873 Kanehori et al. Feb 1986 A
4587225 Tsukuma et al. May 1986 A
4619680 Nourshargh et al. Oct 1986 A
4645726 Hiratani et al. Feb 1987 A
4664993 Sturgis et al. May 1987 A
4668593 Sammells May 1987 A
RE32449 Claussen Jun 1987 E
4672586 Shimohigashi et al. Jun 1987 A
4710940 Sipes, Jr. Dec 1987 A
4728588 Noding et al. Mar 1988 A
4740431 Little Apr 1988 A
4756717 Sturgis et al. Jul 1988 A
4785459 Baer Nov 1988 A
4826743 Nazri May 1989 A
4865428 Corrigan Sep 1989 A
4878094 Balkanski Oct 1989 A
4903326 Zakman et al. Feb 1990 A
4915810 Kestigian et al. Apr 1990 A
4964877 Keister et al. Oct 1990 A
4977007 Kondo et al. Dec 1990 A
4978437 Wirz Dec 1990 A
5006737 Fay Apr 1991 A
5019467 Fujiwara May 1991 A
5030331 Sato Jul 1991 A
5035965 Sangyoji et al. Jul 1991 A
5055704 Link et al. Oct 1991 A
5057385 Hope et al. Oct 1991 A
5085904 Deak et al. Feb 1992 A
5096852 Hobson Mar 1992 A
5100821 Fay Mar 1992 A
5107538 Benton et al. Apr 1992 A
5110694 Nagasubramanian et al. May 1992 A
5110696 Shokoohi et al. May 1992 A
5119269 Nakayama Jun 1992 A
5119460 Bruce et al. Jun 1992 A
5124782 Hundt et al. Jun 1992 A
5147985 DuBrucq Sep 1992 A
5153710 McCain Oct 1992 A
5169408 Biggerstaff et al. Dec 1992 A
5171413 Arntz et al. Dec 1992 A
5173271 Chen et al. Dec 1992 A
5174876 Buchal et al. Dec 1992 A
5180645 Moré Jan 1993 A
5187564 McCain Feb 1993 A
5196041 Tumminelli et al. Mar 1993 A
5196374 Hundt et al. Mar 1993 A
5200029 Bruce et al. Apr 1993 A
5202201 Meunier et al. Apr 1993 A
5206925 Nakazawa et al. Apr 1993 A
5208121 Yahnke et al. May 1993 A
5217828 Sangyoji et al. Jun 1993 A
5221891 Janda et al. Jun 1993 A
5225288 Beeson et al. Jul 1993 A
5227264 Duval et al. Jul 1993 A
5237439 Misono et al. Aug 1993 A
5252194 Demaray et al. Oct 1993 A
5262254 Koksbang et al. Nov 1993 A
5273608 Nath Dec 1993 A
5287427 Atkins et al. Feb 1994 A
5296089 Chen et al. Mar 1994 A
5300461 Ting Apr 1994 A
5302474 Shackle et al. Apr 1994 A
5303319 Ford et al. Apr 1994 A
5306569 Hiraki Apr 1994 A
5307240 McMahon Apr 1994 A
5309302 Vollmann May 1994 A
5314765 Bates May 1994 A
5326652 Lake Jul 1994 A
5326653 Chang Jul 1994 A
5338624 Gruenstern et al. Aug 1994 A
5338625 Bates et al. Aug 1994 A
5342709 Yahnke et al. Aug 1994 A
5355089 Treger et al. Oct 1994 A
5360686 Peled et al. Nov 1994 A
5362579 Rossoll et al. Nov 1994 A
5381262 Arima et al. Jan 1995 A
5387482 Anani Feb 1995 A
5401595 Kagawa et al. Mar 1995 A
5403680 Otagawa et al. Apr 1995 A
5411537 Munshi et al. May 1995 A
5411592 Ovshinsky et al. May 1995 A
5419982 Tura et al. May 1995 A
5427669 Drummond Jun 1995 A
5435826 Sakakibara et al. Jul 1995 A
5437692 Dasgupta et al. Aug 1995 A
5445856 Chaloner-Gill Aug 1995 A
5445906 Hobson et al. Aug 1995 A
5448110 Tuttle et al. Sep 1995 A
5449576 Anani Sep 1995 A
5455126 Bates et al. Oct 1995 A
5457569 Liou et al. Oct 1995 A
5458995 Behl et al. Oct 1995 A
5464692 Huber Nov 1995 A
5464706 Dasgupta et al. Nov 1995 A
5470396 Mongon et al. Nov 1995 A
5472795 Atita Dec 1995 A
5475528 LaBorde Dec 1995 A
5478456 Humpal et al. Dec 1995 A
5483613 Bruce et al. Jan 1996 A
5493177 Muller et al. Feb 1996 A
5498489 Dasgupta et al. Mar 1996 A
5499207 Miki et al. Mar 1996 A
5501918 Gruenstern et al. Mar 1996 A
5504041 Summerfelt Apr 1996 A
5512147 Bates et al. Apr 1996 A
5512387 Ovshinsky Apr 1996 A
5512389 Dasgupta et al. Apr 1996 A
5538796 Schaffer et al. Jul 1996 A
5540742 Sangyoji et al. Jul 1996 A
5547780 Kagawa et al. Aug 1996 A
5547781 Blonsky et al. Aug 1996 A
5547782 Dasgupta et al. Aug 1996 A
5552242 Ovshinsky et al. Sep 1996 A
5555127 Abdelkader et al. Sep 1996 A
5561004 Bates et al. Oct 1996 A
5563979 Bruce et al. Oct 1996 A
5565071 Demaray et al. Oct 1996 A
5567210 Bates et al. Oct 1996 A
5569520 Bates Oct 1996 A
5582935 Dasgupta et al. Dec 1996 A
5591520 Migliorini et al. Jan 1997 A
5597660 Bates et al. Jan 1997 A
5597661 Takeuchi et al. Jan 1997 A
5599355 Nagasubramanian et al. Feb 1997 A
5601952 Dasgupta et al. Feb 1997 A
5603816 Demaray et al. Feb 1997 A
5607560 Hirabayashi et al. Mar 1997 A
5607789 Treger et al. Mar 1997 A
5612152 Bates et al. Mar 1997 A
5612153 Moulton et al. Mar 1997 A
5613995 Bhandarkar et al. Mar 1997 A
5616933 Li Apr 1997 A
5618382 Mintz et al. Apr 1997 A
5625202 Chai Apr 1997 A
5637418 Brown et al. Jun 1997 A
5643480 Gustavsson et al. Jul 1997 A
5644207 Lew et al. Jul 1997 A
5645626 Edlund et al. Jul 1997 A
5645960 Scrosati et al. Jul 1997 A
5654054 Tropsha et al. Aug 1997 A
5654984 Hershbarger et al. Aug 1997 A
5658652 Sellergren Aug 1997 A
5660700 Shimizu et al. Aug 1997 A
5665490 Takeuchi et al. Sep 1997 A
5667538 Bailey Sep 1997 A
5677784 Harris Oct 1997 A
5679980 Summerfelt Oct 1997 A
5681666 Treger et al. Oct 1997 A
5686360 Harvey, III et al. Nov 1997 A
5689522 Beach Nov 1997 A
5693956 Shi et al. Dec 1997 A
5702829 Paidassi et al. Dec 1997 A
5705293 Hobson Jan 1998 A
5716728 Smesko Feb 1998 A
5718813 Drummond et al. Feb 1998 A
5719976 Henry et al. Feb 1998 A
5721067 Jacobs et al. Feb 1998 A
RE35746 Lake Mar 1998 E
5731661 So et al. Mar 1998 A
5738731 Shindo et al. Apr 1998 A
5742094 Ting Apr 1998 A
5755938 Fukui et al. May 1998 A
5755940 Shindo May 1998 A
5757126 Harvey, III et al. May 1998 A
5762768 Goy et al. Jun 1998 A
5763058 Isen et al. Jun 1998 A
5771562 Harvey, III et al. Jun 1998 A
5776278 Tuttle et al. Jul 1998 A
5779839 Tuttle et al. Jul 1998 A
5790489 O'Connor Aug 1998 A
5792550 Phillips et al. Aug 1998 A
5805223 Shikakura et al. Sep 1998 A
5811177 Shi et al. Sep 1998 A
5814195 Lehan et al. Sep 1998 A
5830330 Lantsman Nov 1998 A
5831262 Greywall et al. Nov 1998 A
5834137 Zhang et al. Nov 1998 A
5841931 Foresi et al. Nov 1998 A
5842118 Wood, Jr. Nov 1998 A
5845990 Hymer Dec 1998 A
5847865 Gopinath et al. Dec 1998 A
5849163 Ichikawa et al. Dec 1998 A
5851896 Summerfelt Dec 1998 A
5853830 McCaulley et al. Dec 1998 A
5855744 Halsey et al. Jan 1999 A
5856705 Ting Jan 1999 A
5864182 Matsuzaki Jan 1999 A
5865860 Delnick Feb 1999 A
5870273 Sogabe et al. Feb 1999 A
5874184 Takeuchi et al. Feb 1999 A
5882721 Delnick Mar 1999 A
5882946 Otani Mar 1999 A
5889383 Teich Mar 1999 A
5895731 Clingempeel Apr 1999 A
5897522 Nitzan Apr 1999 A
5900057 Buchal et al. May 1999 A
5909346 Malhotra et al. Jun 1999 A
5916704 Lewin et al. Jun 1999 A
5923964 Li Jul 1999 A
5930046 Solberg et al. Jul 1999 A
5930584 Sun et al. Jul 1999 A
5942089 Sproul et al. Aug 1999 A
5948215 Lantsmann Sep 1999 A
5948464 Delnick Sep 1999 A
5948562 Fulcher et al. Sep 1999 A
5952778 Haskal et al. Sep 1999 A
5955217 Lerberghe Sep 1999 A
5961672 Skotheim et al. Oct 1999 A
5961682 Lee et al. Oct 1999 A
5966491 DiGiovanni Oct 1999 A
5970393 Khorrami et al. Oct 1999 A
5973913 McEwen et al. Oct 1999 A
5977582 Flemming et al. Nov 1999 A
5982144 Johnson et al. Nov 1999 A
5985484 Young et al. Nov 1999 A
5985485 Ovshinsky et al. Nov 1999 A
6000603 Koskenmaki et al. Dec 1999 A
6001224 Drummond et al. Dec 1999 A
6004660 Topolski et al. Dec 1999 A
6007945 Jacobs et al. Dec 1999 A
6013949 Tuttle Jan 2000 A
6019284 Freeman et al. Feb 2000 A
6023610 Wood, Jr. Feb 2000 A
6024844 Drummond et al. Feb 2000 A
6025094 Visco et al. Feb 2000 A
6028990 Shahani et al. Feb 2000 A
6030421 Gauthier et al. Feb 2000 A
6033768 Muenz et al. Mar 2000 A
6042965 Nestler et al. Mar 2000 A
6045626 Yano et al. Apr 2000 A
6045652 Tuttle et al. Apr 2000 A
6045942 Miekka et al. Apr 2000 A
6046081 Kuo Apr 2000 A
6046514 Rouillard et al. Apr 2000 A
6048372 Mangahara et al. Apr 2000 A
6051114 Yao et al. Apr 2000 A
6051296 McCaulley et al. Apr 2000 A
6052397 Jeon et al. Apr 2000 A
6057557 Ichikawa May 2000 A
6058233 Dragone May 2000 A
6071323 Kawaguchi Jun 2000 A
6075973 Greeff et al. Jun 2000 A
6077106 Mish Jun 2000 A
6077642 Ogata et al. Jun 2000 A
6078791 Tuttle et al. Jun 2000 A
6080508 Dasgupta et al. Jun 2000 A
6080643 Noguchi et al. Jun 2000 A
6093944 VanDover Jul 2000 A
6094292 Goldner et al. Jul 2000 A
6096569 Matsuno et al. Aug 2000 A
6100108 Mizuno et al. Aug 2000 A
6106933 Nagai et al. Aug 2000 A
6110531 Paz De Araujo Aug 2000 A
6115616 Halperin et al. Sep 2000 A
6117279 Smolanoff et al. Sep 2000 A
6118426 Albert et al. Sep 2000 A
6120890 Chen et al. Sep 2000 A
6129277 Grant et al. Oct 2000 A
6133670 Rodgers et al. Oct 2000 A
6137671 Staffiere Oct 2000 A
6144916 Wood, Jr. et al. Nov 2000 A
6146225 Sheats et al. Nov 2000 A
6148503 Delnick et al. Nov 2000 A
6156452 Kozuki et al. Dec 2000 A
6157765 Bruce et al. Dec 2000 A
6159635 Dasgupta et al. Dec 2000 A
6160373 Dunn et al. Dec 2000 A
6162709 Raoux et al. Dec 2000 A
6165566 Tropsha Dec 2000 A
6168884 Neudecker et al. Jan 2001 B1
6169474 Greeff et al. Jan 2001 B1
6175075 Shiotsuka et al. Jan 2001 B1
6176986 Watanabe et al. Jan 2001 B1
6181283 Johnson et al. Jan 2001 B1
6192222 Greeff et al. Feb 2001 B1
6197167 Tanaka Mar 2001 B1
6198217 Suzuki et al. Mar 2001 B1
6204111 Uemoto et al. Mar 2001 B1
6210544 Sasaki Apr 2001 B1
6210832 Visco et al. Apr 2001 B1
6214061 Visco et al. Apr 2001 B1
6214660 Uemoto et al. Apr 2001 B1
6218049 Bates et al. Apr 2001 B1
6220516 Tuttle et al. Apr 2001 B1
6223317 Pax et al. Apr 2001 B1
6228532 Tsuji et al. May 2001 B1
6229987 Greeff et al. May 2001 B1
6232242 Hata et al. May 2001 B1
6235432 Kono et al. May 2001 B1
6236793 Lawrence et al. May 2001 B1
6242128 Tura et al. Jun 2001 B1
6242129 Johnson Jun 2001 B1
6242132 Neudecker et al. Jun 2001 B1
6248291 Nakagama et al. Jun 2001 B1
6248481 Visco et al. Jun 2001 B1
6248640 Nam Jun 2001 B1
6249222 Gehlot Jun 2001 B1
6252564 Albert et al. Jun 2001 B1
6258252 Miyasaka et al. Jul 2001 B1
6261917 Quek et al. Jul 2001 B1
6264709 Yoon et al. Jul 2001 B1
6265652 Kurata et al. Jul 2001 B1
6268695 Affinito Jul 2001 B1
6271053 Kondo Aug 2001 B1
6271793 Brady et al. Aug 2001 B1
6271801 Tuttle et al. Aug 2001 B2
6280585 Obinata Aug 2001 B1
6280875 Kwak et al. Aug 2001 B1
6281142 Basceri Aug 2001 B1
6284406 Xing et al. Sep 2001 B1
6287986 Mihara Sep 2001 B1
6289209 Wood, Jr. Sep 2001 B1
6290821 McLeod Sep 2001 B1
6290822 Fleming et al. Sep 2001 B1
6291098 Shibuya et al. Sep 2001 B1
6294722 Kondo et al. Sep 2001 B1
6296949 Bergstresser et al. Oct 2001 B1
6296967 Jacobs et al. Oct 2001 B1
6296971 Hara Oct 2001 B1
6300215 Shin Oct 2001 B1
6302939 Rabin Oct 2001 B1
6306265 Fu et al. Oct 2001 B1
6316563 Naijo et al. Nov 2001 B2
6323416 Komori et al. Nov 2001 B1
6324211 Ovard et al. Nov 2001 B1
6325294 Tuttle et al. Dec 2001 B2
6329213 Tuttle et al. Dec 2001 B1
6339236 Tomii et al. Jan 2002 B1
6340880 Higashijima et al. Jan 2002 B1
6344366 Bates Feb 2002 B1
6344419 Forster et al. Feb 2002 B1
6344795 Gehlot Feb 2002 B1
6350353 Gopalraja et al. Feb 2002 B2
6351630 Wood, Jr. Feb 2002 B2
6356230 Greeff et al. Mar 2002 B1
6356694 Weber Mar 2002 B1
6356764 Ovard et al. Mar 2002 B1
6358810 Dornfest et al. Mar 2002 B1
6360954 Barnardo Mar 2002 B1
6361662 Chiba et al. Mar 2002 B1
6365300 Ota et al. Apr 2002 B1
6365319 Heath et al. Apr 2002 B1
6368275 Sliwa et al. Apr 2002 B1
6369316 Plessing et al. Apr 2002 B1
6372383 Lee et al. Apr 2002 B1
6372386 Cho et al. Apr 2002 B1
6373224 Goto et al. Apr 2002 B1
6375780 Tuttle et al. Apr 2002 B1
6376027 Lee et al. Apr 2002 B1
6379835 Kucherovsky et al. Apr 2002 B1
6379842 Mayer Apr 2002 B1
6379846 Terahara et al. Apr 2002 B1
6380477 Curtin Apr 2002 B1
6384573 Dunn May 2002 B1
6387563 Bates May 2002 B1
6391166 Wang May 2002 B1
6392565 Brown May 2002 B1
6394598 Kaiser May 2002 B1
6395430 Cho et al. May 2002 B1
6396001 Nakamura May 2002 B1
6398824 Johnson Jun 2002 B1
6399241 Hara et al. Jun 2002 B1
6402039 Freeman et al. Jun 2002 B1
6402795 Chu et al. Jun 2002 B1
6402796 Johnson Jun 2002 B1
6409965 Nagata et al. Jun 2002 B1
6413284 Chu et al. Jul 2002 B1
6413285 Chu et al. Jul 2002 B1
6413382 Wang et al. Jul 2002 B1
6413645 Graff et al. Jul 2002 B1
6413676 Munshi Jul 2002 B1
6414626 Greeff et al. Jul 2002 B1
6416598 Sircar Jul 2002 B1
6420961 Bates et al. Jul 2002 B1
6422698 Kaiser Jul 2002 B2
6423106 Bates Jul 2002 B1
6423776 Akkapeddi et al. Jul 2002 B1
6426163 Pasquier et al. Jul 2002 B1
6432577 Shul et al. Aug 2002 B1
6432584 Visco et al. Aug 2002 B1
6433380 Shin Aug 2002 B2
6433465 McKnight et al. Aug 2002 B1
6436156 Wandeloski et al. Aug 2002 B1
6437231 Kurata et al. Aug 2002 B2
6444336 Jia et al. Sep 2002 B1
6444355 Murai et al. Sep 2002 B1
6444368 Hikmet et al. Sep 2002 B1
6444750 Touhsaent Sep 2002 B1
6459418 Comiskey et al. Oct 2002 B1
6459726 Ovard et al. Oct 2002 B1
6466771 Wood, Jr. Oct 2002 B2
6475668 Hosokawa et al. Nov 2002 B1
6480699 Lovoi Nov 2002 B1
6481623 Grant et al. Nov 2002 B1
6488822 Moslehi Dec 2002 B1
6494999 Herrera et al. Dec 2002 B1
6495283 Yoon et al. Dec 2002 B1
6497598 Affinito Dec 2002 B2
6500287 Azens et al. Dec 2002 B1
6503661 Park et al. Jan 2003 B1
6503831 Speakman Jan 2003 B2
6506289 Demaray et al. Jan 2003 B2
6511516 Johnson et al. Jan 2003 B1
6511615 Dawes et al. Jan 2003 B1
6517968 Johnson et al. Feb 2003 B2
6522067 Graff et al. Feb 2003 B1
6524466 Bonaventura et al. Feb 2003 B1
6524750 Mansuetto Feb 2003 B1
6525976 Johnson Feb 2003 B1
6528212 Kusumoto et al. Mar 2003 B1
6529827 Beason et al. Mar 2003 B1
6533907 Demaray et al. Mar 2003 B2
6537428 Xiong et al. Mar 2003 B1
6538211 St. Lawrence et al. Mar 2003 B2
6541147 McLean et al. Apr 2003 B1
6548912 Graff et al. Apr 2003 B1
6551745 Moutsios et al. Apr 2003 B2
6558836 Whitacre et al. May 2003 B1
6562513 Takeuchi et al. May 2003 B1
6563998 Farah et al. May 2003 B1
6569564 Lane May 2003 B1
6569570 Sonobe et al. May 2003 B2
6570325 Graff et al. May 2003 B2
6572173 Muller Jun 2003 B2
6573652 Graff et al. Jun 2003 B1
6576546 Gilbert et al. Jun 2003 B2
6579728 Grant et al. Jun 2003 B2
6582480 Pasquier et al. Jun 2003 B2
6582481 Erbil Jun 2003 B1
6582852 Gao et al. Jun 2003 B1
6589299 Missling et al. Jul 2003 B2
6593150 Ramberg et al. Jul 2003 B2
6599662 Chiang et al. Jul 2003 B1
6600905 Greeff et al. Jul 2003 B2
6602338 Chen et al. Aug 2003 B2
6603139 Tessler et al. Aug 2003 B1
6603391 Greeff et al. Aug 2003 B1
6605228 Kawaguchi et al. Aug 2003 B1
6608464 Lew et al. Aug 2003 B1
6608470 Oglesbee et al. Aug 2003 B1
6610440 LaFollette et al. Aug 2003 B1
6615614 Makikawa et al. Sep 2003 B1
6616035 Ehrensvard et al. Sep 2003 B2
6618829 Pax et al. Sep 2003 B2
6620545 Goenka et al. Sep 2003 B2
6622049 Penner et al. Sep 2003 B2
6632563 Krasnov et al. Oct 2003 B1
6637906 Knoerzer et al. Oct 2003 B2
6637916 Mullner Oct 2003 B2
6639578 Comiskey et al. Oct 2003 B1
6642895 Zurcher et al. Nov 2003 B2
6645675 Munshi Nov 2003 B1
6650000 Ballantine et al. Nov 2003 B2
6650942 Howard et al. Nov 2003 B2
6662430 Brady et al. Dec 2003 B2
6664006 Munshi Dec 2003 B1
6673484 Matsuura Jan 2004 B2
6673716 D'Couto et al. Jan 2004 B1
6674159 Peterson et al. Jan 2004 B1
6677070 Kearl Jan 2004 B2
6683244 Fujimori et al. Jan 2004 B2
6683749 Daby et al. Jan 2004 B2
6686096 Chung Feb 2004 B1
6693840 Shimada et al. Feb 2004 B2
6700491 Shafer Mar 2004 B2
6706449 Mikhaylik et al. Mar 2004 B2
6709778 Johnson Mar 2004 B2
6713216 Kugai et al. Mar 2004 B2
6713389 Speakman Mar 2004 B2
6713987 Krasnov et al. Mar 2004 B2
6723140 Chu et al. Apr 2004 B2
6730423 Einhart et al. May 2004 B2
6733924 Skotheim et al. May 2004 B1
6737197 Chu et al. May 2004 B2
6737789 Radziemski et al. May 2004 B2
6741178 Tuttle May 2004 B1
6750156 Le et al. Jun 2004 B2
6752842 Luski et al. Jun 2004 B2
6753108 Hampden-Smith et al. Jun 2004 B1
6753114 Jacobs et al. Jun 2004 B2
6760520 Medin et al. Jul 2004 B1
6764525 Whitacre et al. Jul 2004 B1
6768246 Pelrine et al. Jul 2004 B2
6768855 Bakke et al. Jul 2004 B1
6770176 Benson et al. Aug 2004 B2
6773848 Nortoft et al. Aug 2004 B1
6780208 Hopkins et al. Aug 2004 B2
6797428 Skotheim et al. Sep 2004 B1
6797429 Komatsu Sep 2004 B1
6805998 Jensen et al. Oct 2004 B2
6805999 Lee et al. Oct 2004 B2
6818356 Bates Nov 2004 B1
6822157 Fujioka Nov 2004 B2
6824922 Park et al. Nov 2004 B2
6827826 Demaray et al. Dec 2004 B2
6828063 Park et al. Dec 2004 B2
6828065 Munshi Dec 2004 B2
6830846 Kramlich et al. Dec 2004 B2
6835493 Zhang et al. Dec 2004 B2
6838209 Langan et al. Jan 2005 B2
6846765 Imamura et al. Jan 2005 B2
6852139 Zhang et al. Feb 2005 B2
6855441 Levanon Feb 2005 B1
6861821 Masumoto et al. Mar 2005 B2
6863699 Krasnov et al. Mar 2005 B1
6866901 Burrows et al. Mar 2005 B2
6866963 Seung et al. Mar 2005 B2
6869722 Kearl Mar 2005 B2
6884327 Pan et al. Apr 2005 B2
6886240 Zhang et al. May 2005 B2
6890385 Tsuchiya et al. May 2005 B2
6896992 Kearl May 2005 B2
6899975 Watanabe et al. May 2005 B2
6902660 Lee et al. Jun 2005 B2
6905578 Moslehi et al. Jun 2005 B1
6906436 Jensen et al. Jun 2005 B2
6911667 Pichler et al. Jun 2005 B2
6916679 Snyder et al. Jul 2005 B2
6921464 Krasnov et al. Jul 2005 B2
6923702 Graff et al. Aug 2005 B2
6924164 Jensen Aug 2005 B2
6929879 Yamazaki Aug 2005 B2
6936377 Wensley et al. Aug 2005 B2
6936381 Skotheim et al. Aug 2005 B2
6936407 Pichler Aug 2005 B2
6949389 Pichler et al. Sep 2005 B2
6955986 Li Oct 2005 B2
6962613 Jenson Nov 2005 B2
6962671 Martin et al. Nov 2005 B2
6964829 Utsugi et al. Nov 2005 B2
6982132 Goldner et al. Jan 2006 B1
6986965 Jenson et al. Jan 2006 B2
6994933 Bates Feb 2006 B1
7022431 Shchori et al. Apr 2006 B2
7033406 Weir et al. Apr 2006 B2
7045246 Simburger et al. May 2006 B2
7045372 Ballantine et al. May 2006 B2
7056620 Krasnov et al. Jun 2006 B2
7073723 Fürst et al. Jul 2006 B2
7095372 Soler Castany et al. Aug 2006 B2
7129166 Speakman Oct 2006 B2
7131189 Jenson Nov 2006 B2
7144654 LaFollette et al. Dec 2006 B2
7144655 Jenson et al. Dec 2006 B2
7157187 Jenson Jan 2007 B2
7158031 Tuttle Jan 2007 B2
7162392 Vock et al. Jan 2007 B2
7183693 Brantner et al. Feb 2007 B2
7186479 Krasnov et al. Mar 2007 B2
7194801 Jenson et al. Mar 2007 B2
7198832 Burrows et al. Apr 2007 B2
7202825 Leizerovich et al. Apr 2007 B2
7220517 Park et al. May 2007 B2
7230321 McCain Jun 2007 B2
7247408 Skotheim et al. Jul 2007 B2
7253494 Mino et al. Aug 2007 B2
7265674 Tuttle Sep 2007 B2
7267904 Komatsu et al. Sep 2007 B2
7267906 Mizuta et al. Sep 2007 B2
7273682 Park et al. Sep 2007 B2
7274118 Jenson et al. Sep 2007 B2
7288340 Iwamoto Oct 2007 B2
7316867 Park et al. Jan 2008 B2
7323634 Speakman Jan 2008 B2
7332363 Edwards Feb 2008 B2
7335441 Luski et al. Feb 2008 B2
RE40137 Tuttle et al. Mar 2008 E
7345647 Rodenbeck Mar 2008 B1
7348099 Mukai et al. Mar 2008 B2
7389580 Jenson et al. Jun 2008 B2
7400253 Cohen Jul 2008 B2
7410730 Bates Aug 2008 B2
RE40531 Graff et al. Oct 2008 E
7466274 Lin et al. Dec 2008 B2
7468221 LaFollette et al. Dec 2008 B2
7494742 Tarnowski et al. Feb 2009 B2
7670724 Chan et al. Mar 2010 B1
7848715 Boos Dec 2010 B2
7858223 Visco et al. Dec 2010 B2
7993773 Snyder et al. Aug 2011 B2
8010048 Brommer et al. Aug 2011 B2
8021778 Snyder et al. Sep 2011 B2
8056814 Martin et al. Nov 2011 B2
8236443 Snyder et al. Aug 2012 B2
20010005561 Yamada et al. Jun 2001 A1
20010027159 Kaneyoshi Oct 2001 A1
20010031122 Lackritz et al. Oct 2001 A1
20010032666 Jenson et al. Oct 2001 A1
20010033952 Jenson et al. Oct 2001 A1
20010034106 Moise et al. Oct 2001 A1
20010041294 Chu et al. Nov 2001 A1
20010041460 Wiggins Nov 2001 A1
20010052752 Ghosh et al. Dec 2001 A1
20010054437 Komori et al. Dec 2001 A1
20010055719 Akashi et al. Dec 2001 A1
20020000034 Jenson Jan 2002 A1
20020001746 Jenson Jan 2002 A1
20020001747 Jenson Jan 2002 A1
20020004167 Jenson et al. Jan 2002 A1
20020009630 Gao et al. Jan 2002 A1
20020019296 Freeman et al. Feb 2002 A1
20020028377 Gross Mar 2002 A1
20020033330 Demaray et al. Mar 2002 A1
20020037756 Jacobs et al. Mar 2002 A1
20020066539 Muller Jun 2002 A1
20020067615 Muller Jun 2002 A1
20020071989 Verma et al. Jun 2002 A1
20020076133 Li et al. Jun 2002 A1
20020090758 Henley et al. Jul 2002 A1
20020091929 Ehrensvard Jul 2002 A1
20020093029 Ballantine et al. Jul 2002 A1
20020106297 Ueno et al. Aug 2002 A1
20020110733 Johnson Aug 2002 A1
20020115252 Haukka et al. Aug 2002 A1
20020134671 Demaray et al. Sep 2002 A1
20020139662 Lee Oct 2002 A1
20020140103 Kloster et al. Oct 2002 A1
20020159245 Murasko et al. Oct 2002 A1
20020161404 Schmidt Oct 2002 A1
20020164441 Amine et al. Nov 2002 A1
20020170821 Sandlin et al. Nov 2002 A1
20020170960 Ehrensvard et al. Nov 2002 A1
20030019326 Han et al. Jan 2003 A1
20030022487 Yoon et al. Jan 2003 A1
20030024994 Ladyansky Feb 2003 A1
20030029493 Plessing Feb 2003 A1
20030030589 Zurcher et al. Feb 2003 A1
20030035906 Memarian et al. Feb 2003 A1
20030036003 Shchori et al. Feb 2003 A1
20030042131 Johnson Mar 2003 A1
20030044665 Rastegar et al. Mar 2003 A1
20030048635 Knoerzer et al. Mar 2003 A1
20030057423 Shimoda et al. Mar 2003 A1
20030063883 Demaray et al. Apr 2003 A1
20030064292 Neudecker et al. Apr 2003 A1
20030068559 Armstrong et al. Apr 2003 A1
20030076642 Shiner et al. Apr 2003 A1
20030077914 Le et al. Apr 2003 A1
20030079838 Brcka May 2003 A1
20030091904 Munshi May 2003 A1
20030095463 Shimada et al. May 2003 A1
20030097858 Strohhofer et al. May 2003 A1
20030109903 Berrang et al. Jun 2003 A1
20030127319 Demaray et al. Jul 2003 A1
20030134054 Demaray et al. Jul 2003 A1
20030141186 Wang et al. Jul 2003 A1
20030143853 Celii et al. Jul 2003 A1
20030146877 Mueller Aug 2003 A1
20030152829 Zhang et al. Aug 2003 A1
20030162094 Lee et al. Aug 2003 A1
20030173207 Zhang et al. Sep 2003 A1
20030173208 Pan et al. Sep 2003 A1
20030174391 Pan et al. Sep 2003 A1
20030175142 Milonopoulou et al. Sep 2003 A1
20030178623 Nishiki et al. Sep 2003 A1
20030178637 Chen et al. Sep 2003 A1
20030180610 Felde et al. Sep 2003 A1
20030185266 Henrichs Oct 2003 A1
20030231106 Shafer Dec 2003 A1
20030232248 Iwamoto et al. Dec 2003 A1
20040008587 Siebott et al. Jan 2004 A1
20040015735 Norman Jan 2004 A1
20040023106 Benson et al. Feb 2004 A1
20040028875 Van Rijn et al. Feb 2004 A1
20040029311 Snyder et al. Feb 2004 A1
20040038050 Saijo et al. Feb 2004 A1
20040043557 Haukka et al. Mar 2004 A1
20040048157 Neudecker et al. Mar 2004 A1
20040053124 LaFollette et al. Mar 2004 A1
20040058237 Higuchi et al. Mar 2004 A1
20040072067 Minami et al. Apr 2004 A1
20040077161 Chen et al. Apr 2004 A1
20040078662 Hamel et al. Apr 2004 A1
20040081415 Demaray et al. Apr 2004 A1
20040081860 Hundt et al. Apr 2004 A1
20040085002 Pearce May 2004 A1
20040101761 Park et al. May 2004 A1
20040105644 Dawes Jun 2004 A1
20040106038 Shimamura et al. Jun 2004 A1
20040106045 Ugaji Jun 2004 A1
20040106046 Inda Jun 2004 A1
20040118700 Schierle-Arndt et al. Jun 2004 A1
20040126305 Chen et al. Jul 2004 A1
20040151986 Park et al. Aug 2004 A1
20040161640 Salot Aug 2004 A1
20040175624 Luski et al. Sep 2004 A1
20040188239 Robison et al. Sep 2004 A1
20040209159 Lee et al. Oct 2004 A1
20040212276 Brantner et al. Oct 2004 A1
20040214079 Simburger et al. Oct 2004 A1
20040219434 Benson et al. Nov 2004 A1
20040245561 Sakashita et al. Dec 2004 A1
20040258984 Ariel et al. Dec 2004 A1
20040259305 Demaray et al. Dec 2004 A1
20050000794 Demaray et al. Jan 2005 A1
20050006768 Narasimhan et al. Jan 2005 A1
20050048802 Zhang et al. Mar 2005 A1
20050070097 Barmak et al. Mar 2005 A1
20050072458 Goldstein Apr 2005 A1
20050079418 Kelley et al. Apr 2005 A1
20050095506 Klaassen May 2005 A1
20050105231 Hamel et al. May 2005 A1
20050110457 LaFollette et al. May 2005 A1
20050112461 Amine et al. May 2005 A1
20050118464 Levanon Jun 2005 A1
20050130032 Krasnov et al. Jun 2005 A1
20050133361 Ding et al. Jun 2005 A1
20050141170 Honda et al. Jun 2005 A1
20050142447 Nakai et al. Jun 2005 A1
20050147877 Tarnowski et al. Jul 2005 A1
20050158622 Mizuta et al. Jul 2005 A1
20050170736 Cok Aug 2005 A1
20050175891 Kameyama et al. Aug 2005 A1
20050176181 Burrows et al. Aug 2005 A1
20050181280 Ceder et al. Aug 2005 A1
20050183946 Pan et al. Aug 2005 A1
20050189139 Stole Sep 2005 A1
20050208371 Kim et al. Sep 2005 A1
20050239917 Nelson et al. Oct 2005 A1
20050255828 Fisher Nov 2005 A1
20050266161 Medeiros et al. Dec 2005 A1
20060019504 Taussig Jan 2006 A1
20060021214 Jenson et al. Feb 2006 A1
20060021261 Face Feb 2006 A1
20060040177 Onodera et al. Feb 2006 A1
20060046907 Rastegar et al. Mar 2006 A1
20060054496 Zhang et al. Mar 2006 A1
20060057283 Zhang et al. Mar 2006 A1
20060057304 Zhang et al. Mar 2006 A1
20060063074 Jenson et al. Mar 2006 A1
20060071592 Narasimhan et al. Apr 2006 A1
20060134522 Zhang et al. Jun 2006 A1
20060155545 Jayne Jul 2006 A1
20060201583 Michaluk et al. Sep 2006 A1
20060210779 Weir et al. Sep 2006 A1
20060222954 Skotheim et al. Oct 2006 A1
20060234130 Inda Oct 2006 A1
20060237543 Goto et al. Oct 2006 A1
20060255435 Fuergut et al. Nov 2006 A1
20060286448 Snyder et al. Dec 2006 A1
20070009802 Lee et al. Jan 2007 A1
20070021156 Hoong et al. Jan 2007 A1
20070023275 Tanase et al. Feb 2007 A1
20070037058 Visco et al. Feb 2007 A1
20070053139 Zhang et al. Mar 2007 A1
20070064396 Oman Mar 2007 A1
20070087230 Jenson et al. Apr 2007 A1
20070091543 Gasse et al. Apr 2007 A1
20070125638 Zhang et al. Jun 2007 A1
20070141468 Barker Jun 2007 A1
20070148065 Weir et al. Jun 2007 A1
20070148553 Weppner Jun 2007 A1
20070151661 Mao et al. Jul 2007 A1
20070164376 Burrows et al. Jul 2007 A1
20070166612 Krasnov et al. Jul 2007 A1
20070184345 Neudecker et al. Aug 2007 A1
20070196682 Visser et al. Aug 2007 A1
20070202395 Snyder et al. Aug 2007 A1
20070205513 Brunnbauer et al. Sep 2007 A1
20070210459 Burrows et al. Sep 2007 A1
20070222681 Greene et al. Sep 2007 A1
20070224951 Gilb et al. Sep 2007 A1
20070229228 Yamazaki et al. Oct 2007 A1
20070235320 White et al. Oct 2007 A1
20070264564 Johnson et al. Nov 2007 A1
20070278653 Brunnbauer et al. Dec 2007 A1
20070298326 Angell et al. Dec 2007 A1
20080003496 Neudecker et al. Jan 2008 A1
20080008936 Mizuta et al. Jan 2008 A1
20080014501 Skotheim et al. Jan 2008 A1
20080057397 Skotheim et al. Mar 2008 A1
20080150829 Lin et al. Jun 2008 A1
20080213672 Skotheim et al. Sep 2008 A1
20080233708 Hisamatsu Sep 2008 A1
20080254575 Fuergut et al. Oct 2008 A1
20080261107 Snyder et al. Oct 2008 A1
20080263855 Li et al. Oct 2008 A1
20080286651 Neudecker et al. Nov 2008 A1
20090092903 Johnson et al. Apr 2009 A1
20090124201 Meskens May 2009 A1
20090181303 Neudecker et al. Jul 2009 A1
20090302226 Schieber et al. Dec 2009 A1
20090308936 Nitzan et al. Dec 2009 A1
20090312069 Peng et al. Dec 2009 A1
20100001079 Martin et al. Jan 2010 A1
20100032001 Brantner Feb 2010 A1
20100086853 Venkatachalam et al. Apr 2010 A1
20110267235 Brommer et al. Nov 2011 A1
20110304430 Brommer et al. Dec 2011 A1
Foreign Referenced Citations (133)
Number Date Country
1415124 Apr 2003 CN
1532984 Sep 2004 CN
19824145 Dec 1999 DE
10 2005 014 427 Sep 2006 DE
10 2006 054 309 Nov 2006 DE
10 2008 016 665 Oct 2008 DE
102007030604 Jan 2009 DE
0 510 883 Oct 1992 EP
0 639 655 Feb 1995 EP
0 652 308 May 1995 EP
0 820 088 Jan 1998 EP
1 068 899 Jan 2001 EP
0 867 985 Feb 2001 EP
1 092 689 Apr 2001 EP
1 189 080 Mar 2002 EP
1 713 024 Oct 2006 EP
2806198 Sep 2001 FR
2 861 218 Apr 2005 FR
55009305 Jan 1980 JP
56-076060 Jun 1981 JP
56156675 Dec 1981 JP
60068558 Apr 1985 JP
61-269072 Nov 1986 JP
62267944 Nov 1987 JP
63-290922 Nov 1988 JP
2000-162234 Nov 1988 JP
2-054764 Feb 1990 JP
2230662 Sep 1990 JP
03-036962 Feb 1991 JP
4058456 Feb 1992 JP
4072049 Mar 1992 JP
6-010127 Jan 1994 JP
6-100333 Apr 1994 JP
7-233469 May 1995 JP
7-224379 Aug 1995 JP
08-114408 May 1996 JP
09-259932 Oct 1997 JP
10-026571 Jan 1998 JP
10-239187 Sep 1998 JP
11204088 Jul 1999 JP
11-251518 Sep 1999 JP
2000144435 May 2000 JP
2000188099 Jul 2000 JP
2000268867 Sep 2000 JP
2001-171812 Jun 2001 JP
2001259494 Sep 2001 JP
2001297764 Oct 2001 JP
2001328198 Nov 2001 JP
2002-140776 May 2002 JP
2002-344115 Nov 2002 JP
2003-17040 Jan 2003 JP
2003-133420 May 2003 JP
2003347045 Dec 2003 JP
2004071305 Mar 2004 JP
2004 146297 May 2004 JP
2004149849 May 2004 JP
2004-158268 Jun 2004 JP
2004273436 Sep 2004 JP
2005-256101 Sep 2005 JP
2005-286011 Oct 2005 JP
2002-026412 Feb 2007 JP
7-107752 Apr 2007 JP
20020007881 Jan 2002 KR
20020017790 Mar 2002 KR
20020029813 Apr 2002 KR
20020038917 May 2002 KR
20030033913 May 2003 KR
20030042288 May 2003 KR
20030085252 Nov 2003 KR
2241281 Nov 2004 RU
WO 9513629 May 1995 WO
WO 9623085 Aug 1996 WO
WO 9623217 Aug 1996 WO
WO 9727344 Jul 1997 WO
WO 9735044 Sep 1997 WO
WO 9847196 Oct 1998 WO
WO 9943034 Aug 1999 WO
WO 9957770 Nov 1999 WO
WO 0021898 Apr 2000 WO
WO 0022742 Apr 2000 WO
WO 0028607 May 2000 WO
WO 0036665 Jun 2000 WO
WO 0060682 Oct 2000 WO
WO 0060689 Oct 2000 WO
WO 0062365 Oct 2000 WO
WO 0101507 Jan 2001 WO
WO 0117052 Mar 2001 WO
WO 0124303 Apr 2001 WO
WO 0133651 May 2001 WO
WO 0139305 May 2001 WO
WO 0173864 Oct 2001 WO
WO 0173865 Oct 2001 WO
WO 0173866 Oct 2001 WO
WO 0173868 Oct 2001 WO
WO 0173870 Oct 2001 WO
WO 0173883 Oct 2001 WO
WO 0173957 Oct 2001 WO
WO 0182390 Nov 2001 WO
02 15301 Feb 2002 WO
WO 0212932 Feb 2002 WO
WO 0242516 May 2002 WO
WO 0247187 Jun 2002 WO
WO 02071506 Sep 2002 WO
WO 02101857 Dec 2002 WO
WO 03003485 Jan 2003 WO
WO 03005477 Jan 2003 WO
WO 03026039 Mar 2003 WO
WO 03036670 May 2003 WO
WO 03069714 Aug 2003 WO
WO 03080325 Oct 2003 WO
WO 03083166 Oct 2003 WO
WO 2004012283 Feb 2004 WO
WO 2004021532 Mar 2004 WO
WO 2004061887 Jul 2004 WO
WO 2004077519 Sep 2004 WO
WO 2004086550 Oct 2004 WO
WO 2004093223 Oct 2004 WO
WO 2004106581 Dec 2004 WO
WO 2004106582 Dec 2004 WO
WO 2005008828 Jan 2005 WO
WO 2005013394 Feb 2005 WO
WO 2005038957 Apr 2005 WO
WO 2005067645 Jul 2005 WO
WO 2005085138 Sep 2005 WO
WO 2005091405 Sep 2005 WO
WO 2006063308 Jun 2006 WO
WO 2006085307 Aug 2006 WO
PCTUS2006044827 Nov 2006 WO
WO 2007016781 Feb 2007 WO
WO 2007019855 Feb 2007 WO
WO 2007027535 Mar 2007 WO
WO 2007095604 Aug 2007 WO
WO 2008036731 Mar 2008 WO
Non-Patent Literature Citations (157)
Entry
Celgard products description, retrived from<http://www.celgard.com/pdf/library/Celgard—Product—Comparison—10002.pdf> on Jun. 17, 2011.
Abraham, K.M. et al., “Inorganic-organic composite solid polymer electrolytes,” 147(4) J. Electrochem. Soc. 1251-56 (2000).
Abrahams, I., “Li6Zr2O7, a new anion vacancy ccp based structure, determined by ab initio powder diffraction methods,” 104 J. Solid State Chem. 397-403 (1993).
Amatucci, G. et al., “Lithium scandium phosphate-based electrolytes for solid state lithium rechargeable microbatteries,” 60 Solid State Ionics 357-65 (1993).
Appetecchi, G.B. et al., “Composite polymer electrolytes with improved lithium metal electrode interfacial properties,” 145(12) J. Electrochem. Soc. 4126-32 (1998).
Bates, J.B. et al., “Electrical properties of amorphous lithium electrolyte thin films,” 53-56 Solid State Ionics 647-54 (1992).
Delmas, C. et al., “Des conducteurs ioniques pseudo-bidimensionnels Li8MO6 (M=Zr, Sn), Li7LO6 (L=Nb, Ta) et Li6In2O6,” 14 Mat. Res. Bull. 619-25 (1979).
Hu, Y-W. et al., “Ionic conductivity of lithium phosphate-doped lithium orthosilicate,” 11 Mat. Res. Bull. 1227-30 (1976).
Neudecker, B. et al., “Li9SiAlO8: a lithium ion electrolyte for voltages above 5.4 V,” 143(7) J. Electrochem. Soc. 2198-203 (1996).
Ohno, H. et al., “Electrical conductivity of a sintered pellet of octalithium zirconate,” 132 J. Nucl. Mat. 222-30 (1985).
Scholder, V. et al., “Über Zirkonate, Hafnate und Thorate von Barium, Strontium, Lithium und Natrium,” Zeitschrift für Anorganische und Allgemeine Chemie, Band 362, pp. 149-168 (1968).
Yu, X. et al., “A stable thin-film lithium electrolyte: lithium phosphorus oxynitride,” 144(2) J. Electrochem. Soc. 524-532 (1997).
Fujii, M. et al., “1.54 μm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: evidence for energy transfer from Si nanocrystals for Er3+,” Appl. Phys. Lett. 71(9): 1198-1200 (1997).
Garcia, C. et al., “Size dependence of lifetime and absorption cross section of Si nanocrystals embedded in SiO2,” Appl. Phys. Lett. 82(10): 1595-1597 (2003).
Goossens, A. et al., “Sensitization of TiO2 with p-type semiconductor polymers,” Chem. Phys. Lett. 287: 148 (1998).
Greene, J.E. et al., “Morphological and electrical properties of rf sputtered Y2O3-doped ZrO2 thin films,” J. Vac. Sci. Tech. 13(1): 72-75 (1976).
Han, H.-S. et al., “Optical gain at 1.54 μm in Erbium-doped Silicon nanocluster sensitized waveguide,” Appl. Phys. Left. 79(27): 4568-4570 (2001).
Hayakawa, T. et al., “Enhanced fluorescence from Eu3+ owing to surface plasma oscillation of silver particles in glass,” J. Non-Crystalline Solids 259: 16-22 (1999).
Hayakawa, T. et al., “Field enhancement effect of small Ag particles on the fluorescence from Eu3+ -doped SiO2 glass,” Appl. Phys. Lett. 74(11): 1513-1515 (1999).
Hayfield, P.C.S., I Development of a New Material-Monolithic Ti4O7 Ebonix® Ceramic, Royal Society of Chemistry, Cambridge, Table of Contents, 4 pages (2002).
Hehlen, M.P. et al., “Spectroscopic properties of Er3+- and Yb3+-doped soda-lime silicate and aluminosilicate glasses,” Physical Review B 56(15): 9302-9318 (1997).
Hehlen, M.P. et al., “Uniform upconversion in high-concentration Er3+-doped soda lime silicate and aluminosilicate glasses,” Optics Letters 22(11); 772-774 (1997).
Horst, F. et al., “Compact, tunable optical devices in silicon-oxynitride waveguide technology,” Top. Meeting Integrated Photonics Res. '00, Quebec, Canada, p. IThF1, 3 pages (2000).
Howson, R.P., “The reactive sputtering of oxides and nitrides,” Pure & Appl. Chem. 66(6): 1311-1318 (1994).
Hubner, J. and Guldberg-Kjaer, S., “Planar Er- and Yb-doped amplifiers and lasers,” COM Technical University of Denmark, 10th European Conf. on Integrated Optics, Session WeB2, pp. 71-74 (2001).
Hwang et al., “Characterization of sputter-deposited LiMn2O4 thin films for rechargeable microbatteries,” 141(12) J. Electrochem. Soc. 3296-99 (1994).
Hwang, M-S. et al., “The effect of pulsed magnetron sputtering on the properties of iridium tin oxide thin films,” Surface and Coatings Tech. 171: 29-33 (2003).
Im, J.S. and Sposili, R.S., “Crystalline Si films for integrated active-matrix liquid crystal displays,” MRS Bulletin, pp. 39-48 (1996).
1m, J.S. et al., “Controlled super-lateral growth of Si-films for microstructural manipulation and optimization,” Physica Status Solidi (A) 166(2): 603-617 (1998).
Im, J.S. et al., “Single-crystal Si films for thin-film transistor devices,” Appl. Physics Lett. 70(25): 3434-3436 (1997).
Itoh, M. et al., “Large reduction of singlemode-fibre coupling loss in 1.5% Δ planar lightwave circuits using spot-size converters,” Electronics Letters 38(2): 72-74 (2002).
Jackson, M.K. and Movassaghi, M., “An accurate compact EFA model,” Eur. Conf. Optical Comm., Munich, Germany, 2 pages (2000).
Janssen, R. et al., “Photoinduced electron transfer from conjugated polymers onto nanocrystalline TiO2,” Synthet. Metal., 1 page (1999).
Johnson, J.E. et al., “Monolithically integrated semiconductor optical amplifier and electroabsorption modulator with dual-waveguide spot-size converter input,” IEEE J. Selected topics in Quantum Electronics 6(1): 19-25 (2000).
Jonsson, L.B. et al., “Frequency response in pulsed DC reactive sputtering processes,” Thin Solid Films 365: 43-48 (2000).
Kato, K. and Inoue, Y., “Recent progress on PLC hybrid integration,” SPIE 3631: 28-36 (1999).
Kato, K. and Tohmori, Y., “PLC hybrid integration technology and its application to photonic components,” IEEE J. Selected Topics in Quantum Electronics 6(1): 4-13 (2000).
Kelly, P.J. and Arnell, R.D., “Control of the structure and properties of aluminum oxide coatings deposited by pulsed magnetron sputtering,” J. Vac. Sci. Technol. A 17(3): 945-953 (1999).
Kelly, P.J. et al., “A novel technique for the deposition of aluminum-doped zinc oxide films,” Thin Solid Films 426(1-2): 111-116 (2003).
Kelly, P.J. et al., “Reactive pulsed magnetron sputtering process for alumina films,” J. Vac. Sci. Technol. A 18(6): 2890-2896 (2000).
Kik, P.G. and Polman, A., “Gain limiting processes in Er-doped Si nanocrystal waveguides in SiO2,” J. Appl. Phys. 91(1): 536-536 (2002).
Kim et al., “Correlation Between the Microstructures and the Cycling Performance of RuO2 Electrodes for Thin-Film Microsupercapacitros,” J. Vac. Sci. Technol. B20(5): 1827-1832 (Sep. 2002).
Kim, D-W. et al. “Mixture Behavior and Microwave Dielectric Properties in the Low-fired TiO2-CuO System,” Jpn. J. Appl. Phys. 39:2696-2700 (2000).
Kim, H-K. et al., “Characteristics of rapid-thermal-annealed LiCoO2 cathode film for an all-solid-state thin film microbattery,” J. Vac. Sci. Technol. A 22(4): 1182-1187 (2004).
Kim, J-Y. et al. “Frequency-dependent pulsed direct current magnetron sputtering of titanium oxide films,” J. Vac. Sci. Technol. A 19(2):429-434 (2001).
Ladouceur, F. and Love, J.D., In: Silica-based Buried Channel Waveguides and Devices, Chapman & Hall, London, Table of Contents, 6 pages (1996).
Ladouceur, F. et al., “Effect of side wall roughness in buried channel waveguides,” IEEE Proc. Optoelectron. 141(4):242-248 (1994).
Lamb, W. and Zeiler, R., Designing Non-Foil Containing Skins for Vacuum Insulation Panel (VIP) Application, Vuoto XXVIII(1-2):55-58 (1999).
Lamb, W.B., “Designing Nonfoil Containing Skins for VIP Applications,” DuPont VIA Symposium Presentation, 35 Pages (1999).
Lange, M.R. et al, “High Gain Ultra-Short Length Phosphate glass Erbium-Doped Fiber Amplifier Material,” OSA Optical Fiber Communications (OFC), 3 Pages (2002).
Laporta, P. et al, “Diode-pumped cw bulk Er: Yb: glass laser,” Optics Letters 16(24):1952-1954 (1991).
Laurent-Lund, C. et al., “PECVD Grown Multiple Core Planar Waveguides with Extremely Low Interface Reflections and Losses,” IEEE Photonics Tech. Lett. 10(10):1431-1433 (1998).
Lee, B.H. et al., “Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silion,” Appl. Phys. Lett. 74(21):3143-3145 (1999).
Lee, K.K. et al., “Effect of size and roughness on light transmission in a Si/SiO2 waveguide: Experiments and model,” Appl. Phys. Lett. 77(11):1617-1619 (2000).
Love, J.D. et al., “Quantifying Loss Minimisation in Single-Mode Fibre Tapers,” Electronics Letters 22(17):912-914 (1986).
Mardare, D. and Rusu, G.I., “On the structure of Titanium Oxide Thin Films,” Andalele Stiintifice Ale Universitatii IASI, Romania, pp. 201-208 (1999).
Marques, P.V.S. et al., “Planar Silica-on-Silicon Waveguide Lasers Based in Two Layers Core Devices,” 10th European Conference on Integrated Optics, Session WeB2, pp. 79-82 (2001).
Meijerink, A. et al, “Luminescence of Ag+ in Crystalline and Glassy Srb4O7,” J. Physics Chem. Solids 54(8):901-906 (1993).
Mesnaoui, M. et al, “Spectroscopic properties of Ag+ ions in phosphate glasses of NaPO3-AgPO3 system,” Eur. J. Solid State Inorg. Chem. 29:1001-1013 (1992).
Mitomi, O. et al., “Design of a Single-Mode Tapered Waveguide for Low-Loss Chip-to-Fiber Coupling,” IEEE J. Quantum Electronics 30(8): 1787-1793 (1994).
Mizuno, Y. et al “Temperature dependence of oxide decomposition on titanium surfaces in UHV,” J. Vac. Sci & Tech. A. 20(5): 1716-1721 (2002).
Ohkubo, H. et al., Polarization-Insensitive Arrayed-Waveguide Grating Using Pure SiO2 Cladding, Fifth Optoelectronics and Communication Conference (OECC 2000) Technical Digest, pp. 366-367 (2000).
Ohmi, S. et al., “Rare earth mental oxides for high-K fate insulator,” VLSI Design 2004, 1 Page (2004).
Ohtsuki, T., et al., “Gain Characteristics of high concentration Er3+-doped phosphate glass waveguide,” J. Appl. Phys. 78(6):3617-3621 (1995).
Ono, H. et al., “Design of a Low-loss Y-branch Optical Waveguide,” Fifth Optoelectronic and Communications Conference (OECC 2000) Technical Digest, pp. 502-503 (2000).
Padmini, P. et al. “Realization of High Tunability Barium Strontium Titanate Thin Films by rf Megnetron Sputtering,” Appl. Phys. Lett. 75(20):3186-3188 (1999).
Pan, T. et al., “Planar Er3+-doped aluminosilicate waveguide amplifier with more than 10 dB gain across C-band, ” Optical Society of America, 3 pages (2000).
Park et al., “Characteristics of Pt Thin Film on the Conducting Ceramics TiO and Ebonex (Ti4O7) as Electrode Materials,” Thin Solid Films 258: 5-9 (1995).
Peters, D.P. et al., “Formation mechanism of silver nanocrystals made by ion irradiation of Na+—Ag+ ion-exchanged sodalime silicate glass,” Nuclear Instruments and Methods in Physics Research B 168:237-244 (2000).
Rajarajan, M. et al., “Numerical Study of Spot-Size Expanders fro an Efficient OEIC to SMF Coupling,” IEEE Photonics Technology Letters 10(8): 1082-1084 (1998).
Ramaswamy, R.V. et al., “Ion-Exchange Glass Waveguides: A Review,” J. Lightwave Technology 6(6): 984-1002 (1988).
Roberts, S.W. et al., “The Photoluminescence of Erbium-doped Silicon Monoxide,” University of Southampton , Department of Electronics and Computer Science Research Journal, 7 pages (1996).
Saha et al., “Large Reduction of Leakage Current by Graded-Layer La Doping in (Ba0.5,Sr0.5)TiO3 Thin Films,” Appl. Phys. Lett. 79(1): 111-113 (Jul. 2001).
Sanyo Vacuum Industries Co., Ltd. Products Infor, TiO2, (2003), 1 page, http://www.sanyovac.co.jp/Englishweb/products?EtiO2.htm.
Schermer, R. et al., “Investigation of Mesa Dielectric Waveguides,” Proceedings of the OSA Integrated Photonics Research Topical Meeting and Exhibit, Paper No. IWB3, 3 pages (2001).
Schiller, S. et al., “PVD Coating of Plastic Webs and Sheets with High Rates on Large Areas,” European Materials Research Society 1999 Spring Meeting, Jun. 1-4, 1999, Strasbourg, France, 13 pages (1999).
Scholl, R., “Power Supplies for Pulsed Plasma Technologies: State-of-the-Art and Outlook,” Advances Energy Industries, Inc. 1-8 (1999).
Scholl, R., “Power Systems for Reactive Sputtering of Insulating Films,” Advances Energy Industries, Inc., 1-8 (Aug. 2001).
Second International Symposium of Polymer Surface Modification: Relevance to Adhesion, Preliminary Program, 13 pages (1999).
Seventh International Conference on TiO2 Photocatalysis: Fundamentals & Applications, Toronto, Ontario, Canada, Final Program, 7 pages (Nov. 17-21, 2002).
Sewell, P. et al., “Rib Waveguide Spot-Size Transformers: Modal Properties,” J Lightwave Technology 17(5):848-856 (1999).
Shaw, D.G. et al., “Use of Vapor Deposited Acrylate Coatings to Improve the Barrier Properties of Metallized Film,” Society of Vacuum Coaters, 37th Annual Technical Conference Proceedings, pp. 240-244 (1994).
Shin, J.C. et al. “Dielectric and Electrical Properties of Sputter Grown (Ba,Se)TiO3 Thin Films,” J. Appl. Phys. 86(1):506-513 (1999).
Shmulovich, J. et al., “Recent progress in Erbium-doped waveguide amplifiers,” Bell Laboratories, pp. 35-37 (1999).
Slooff, L.H. et al., “Optical properties of Erbium-doped organic polydentate cage complexes,” J. Appl. Phys. 83(1):497-503 (1998).
Smith, R.E. et al., “Reduced Coupling Loss Using a Tapered-Rib Adiabatic-Following Fiber Coupler,” IEEE Photonics Technology Lett. 8(8):1052-1054 (1996).
Snoeks, E. et al., “Cooperative upconversion in erbium-implanted soda-lime silicate glass optical waveguides,” J. Opt. Soc. Am. B 12(8): 1468-1474 (1995).
Strohhofer, C. and Polman, A. “Energy transfer to Er3+ in Ag ion-exchanged glass,” FOM Institute for Atomic and Molecular Physics, 10 pages (2001).
Sugiyama, A. et al., “Gas Permeation Through the Pinholes of Plastic Film Laminated with Aluminum Foil,” Vuoto XXVIII(1-2):51-54 (1999).
Tervonen, A. “Challenges and opportunities for integrated optics in optical networks,” SPIE 3620:2-11 (1999).
Ting, C.Y. et al., “Study of planarized sputter-deposited SiO2” J. Vac. Sci Technol, 15(3):1105-1112 (1978).
Tomaszewski, H. et al., “Yttria-stabilized zirconia thin films grown by reactive r.f. magnetron sputtering,” Thin Solid Films 287: 104-109 (1996).
B. Wang et al., “Characterization of Thin-Film Rechargeable Lithium Batteries with Lithium Cobalt Oxide Cathodes,” J. Electrochem. Soc., vol. 143, No. 10, Oct. 1996, pp. 3203-3213.
J.B. Bates et al., “Thin-Film Lithium Batteries,” in New Trends in Electrochemical Technology: Energy Storage Systems for Electronics, ed. by T. Osaka & M. Datta, Gordon and Breach, 2000, pp. 453-485.
Triechel, O. and Kirchhoff, V., “The influences of pulsed magnetron sputtering on topography and crystallinity of TiO2 films on glass,” Surface and Coating Technology 123:268-272 (2000).
Tukamoto, H. and West, A.R., “Electronic Conductivity of LiCoOs and Its Enhancement by Magnesium Doping,” J. Electrochem. Soc 144(9):3164-3168 (1997).
Van Dover, R.B., “Amorphous Lanthanide-Doped TiOx Dielectric Films,” Appl. Phys. Lett. 74(20):3041-3043 (1999).
Viljanen, J. and Leppihalme, M., “Planner Optical Coupling Elements for Multimode Fibers with Two-Step Ion Migration Process,” Applied Physics 24(1):61-63 (1981).
Villegas, M.A. et al., “Optical spectroscopy of a soda lime glass exchanged with silver,” Phys. Chem. Glasses 37(6):248-253 (1996).
Von Rottkay, K. et al., “Influences of stoichiometry on electrochromic cerium-titanium oxide compounds,” Presented at the 11th Int'l Conference of Solid State Ionics, Honolulu, Hawaii, Nov. 19, 1997, Published in Solid State Ionics 113-115:425-430. (1998).
Westlinder, J. et al., “Simulations and Dielectric Characterization of Reactive dc Magnetron Cosputtered (Ta2O5)1-x(TiO2) Thin Films,” J Vac. Sci. Technol. B 20(3):855-861 (May/Jun. 2002).
Wilkes, K.E., “Gas Permeation Through Vacuum Barrier Films and its Effect on VIP Thermal Performance,” presented at the Vacuum Insulation Panel Symp., Baltimore, Maryland, 21 pages (May 3, 1999).
Yanagawa, H. et al., “Index-and-Dimensional Taper and Its Application to Photonic Devices,” J. Lightwave Technology 10(5):587-591 (1992).
Yoshikawa, K. et al., “Spray formed aluminum alloys for sputtering targets,” Powder Metallurgy 43(3): 198-199 (2000).
Zhang, H. et al., “High Dielectric Strength, High k TiO2 Films by Pulsed DC, Reactive Sputter Deposition,” 5 pages (2001).
Affinito, J.D. et al., “PML/oxide/PML barrier layer performance differences arising from use of UV or electron beam polymerization of the PML layers,” Thin Solid Films 308-309: 19-25 (1997).
Affinito, J.D. et al., “Polymer-oxide transparent barrier layers,” Society of Vacuum Coaters, 39th Ann. Technical Conference Proceedings, May 5-10, 1996, Philadelphia, PA, pp. 392-397 (1996).
Alder, T. et al., “High-efficiency fiber-to-chip coupling using low-loss tapered single-mode fiber,” IEEE Photonics Tech. Lett. 12(8): 1016-1018 (2000).
Almeida, V.R. et al., “Nanotaper for compact mode conversion,” Optics Letters 28(15): 1302-1304 (2003).
Anh et al., “Significant Suppression of Leakage Current in (Ba,Sr)TiO3 Thin Films by Ni or Mn Doping,” J. Appl. Phys.,92(5): 2651-2654 (Sep. 2002).
Asghari, M. and Dawnay, E., “ASOC™—a manufacturing integrated optics technology,” SPIE 3620: 252-262 (Jan. 1999).
Barbier, D. et al., “Amplifying four-wavelength combiner, based on erbium/ytterbium-doped waveguide amplifiers and integrated splitters,” IEEE Photonics Tech. Lett. 9:315-317 (1997).
Barbier, D., “Performances and potential applications of erbium doped planar waveguide amplifiers and lasers,” Proc. OAA, Victoria, BC, Canada, pp. 58-63 (Jul. 21-23, 1997).
Beach R.J., “Theory and optimization of lens ducts,” Applied Optics 35(12): 2005-2015 (1996).
Belkind, A. et al., “Pulsed-DC Reactive Sputtering of Dielectrics: Pulsing Parameter Effects,” 43rd Annual Technical Conference Proceedings (2000).
Belkind, A. et al., “Using pulsed direct current power for reactive sputtering of A12O3,” J. Vac. Sci. Technol. A 17(4): 1934-1940 (1999).
Bestwick, T., “ASOC™ silicon integrated optics technology,” SPIE 3631: 182-190 (1999).
Borsella, E. et al., “Structural incorporation of silver in soda-lime glass by the ion-exchange process: a photoluminescence spectroscopy study,” Applied Physics A 71: 125-132 (2000).
Byer, R.L., “Nonlinear optics and solid-state lasers: 2000,” IEEE J. Selected Topics in Quantum Electronics 6(6): 911-930 (2000).
Campbell, S.A. et al., “Titanium dioxide (TiO2)-based gate insulators,” IBM J. Res. Develop. 43(3): 383-392 (1999).
Chang, C.Y. and Sze, S.M. (eds.), in ULSI Technology, The McGraw-Hill Companies, Inc., Nyew York, Chapter 4, pp. 169-170 and 226-231 (1996).
Chen, G. et al., “Development of supported bifunctional electrocatalysts for unitized regenerative fuel cells,” J. Electrochemical Society 149(8): A1092-A1099 (2002).
Choi, Y.B. et al., “Er-Al-codoped silicate planar light waveguide-type amplifier fabricated by radio-frequency sputtering,” Optics Letters 25(4): 263-265 (2000).
Choy et al., “Eu-Doped Y2O3 Phosphor Films Produced by Electrostatic-Assisted Chemical Vapor Deposition,” J. Mater. Res. 14(7): 3111-3114 (Jul. 1999).
Cocorullo, G. et al., “Amorphous silicon waveguides and light modulators for integrated photonics realized by low-temperature plasma-enhanced chemical-vapor deposition,” Optics Lett. 21(24): 2002-2004 (1996).
Cooksey, K. et al., “Predicting permeability & Transmission rate for multilayer materials,” Food Technology 53(9): 60-63 (1999).
Crowder, M.A. et al., “Low-temperature single-crystal Si TFT's fabricated on Si films processed via sequential lateral solidification,” IEEE Electron Device Lett. 19(8): 306-308 (1998).
Delavaux, J-M. et al., “Integrated optics erbium ytterbium amplifier system in 10Gb/s fiber transmission experiment,” 22nd European Conference on Optical Communication, Osla, I.123-I.126 (1996).
Distributed Energy Resources: Fuel Cells, Projects, 4 pages http://www.eere.energy.gov/der/fuel—cells/projects.html (2003).
Dorey, R.A., “Low temperature micromoulding of functional ceramic devices,” Grant summary for GR/S84156/01 for the UK Engineering and Physical Sciences Research Council, 2 pages (2004).
DuPont Teijin Films, Mylar 200 SBL 300, Product Information, 4 pages (2000).
Electrometals Technologies Limited, Financial Report for 2002, Corporate Directory, Chairman's review, Review of Operations, 10 pages (2002).
E-Tek website: FAQ, Inside E-Tek, E-TEk News, Products; http://www.etek-inc.com/, 10 pages (2003).
Flytzanis, C. et al., “Nonlinear optics in composite materials,” in Progress in Optics XXIX, Elsevier Science Publishers B.V., pp. 323-425 (1991).
Frazao, O. et al., “EDFA gain flattening using long-period fibre gratings based on the electric arc technique,” Proc. London Comm. Symp. 2001, London, England, 3 pages (2001).
Sarro, P., “Silicon Carbide as a New MEMS Technology,” Sensors and Actuators 82, 210-218 (2000).
Hwang et al., “Characterization of Sputter-Deposited LiMn2O4 Thin Films for Rechargeable Microbatteries,” 141(12) J. Electrochem. Soc. 3296-99 (1994).
Jones et al., “A Thin Film Solid State Microbattery,” 53-56 Solid State Ionics 628 (1992).
Mattox “Handbook of Physical Vapor Deposition (PVD) Processing, Society of Vacuum Coaters,” Albuquerque, New Mexico 660f and 692ff, Noyes Publications (1998).
Hill, R. et al., “Large Area Deposition by Mid-Frequency AC Sputtering,” Society of Vacuum Coaters, 41st Annual Tech. Conferene Proceedings, 197-202 (1998).
Macák, Karol et al, “Ionized Sputter Deposition Using an Extremely High Plasma Density Pulsed Magnetron Discharge,” J. Vac. Sci, Technol. A 18(4):1533-37 (2000).
Balanis, Constantine A., “Antenna Theory: Analysis and Design,” 3rd Ed., pp. 817-820 (John Wiley & Sons, Inc. Publication, 2005).
Dobkin, D.M., “Silicon Dioxide: Properties and Applications”.
Hill, R. et al., “Large Area Deposition by Mid-Frequency AC Sputtering,” Society of Vacuum Coaters, 41st Annual Tech. Conference Proceedings, 197-202 (1998).
Macák, Karol et al, “Ionized Sputter Deposition Using an Extremely High Plasma Density Pulsed Magnetron Discharge,” J. Vac. Sci. Technol. A 18(4):1533-37 (2000).
Non-Final Rejection dated Jul. 1, 2011, in U.S. Appl. No. 12/179,701.
Inaguma, Yoshiyuki, “High Ionic Conductivity in Lithium Lanthanum Titanate,” Solid State Communications,vol. 86, No. 10, pp. 689-693 (1993).
Guy, D., “Novel Architecture of Composite Electrode for Optimization of Lithium Battery Performance,” Journal of Power Sources 157, pp. 438-442 (2006).
Wolfenstine, J., “Electrical Conductivity and Charge Compensation in Ta Doped Li4Ti5O12,” Journal of Power Sources 180, pp. 582-585 (2008).
Balanis, Constantine A., “Antenna Theory: Analysis and Design,” 3rd Ed., pp. 811-820 (2005).
Adachi et al., Thermal and Electrical Properties of Zirconium Nitride, 2005, Journal of Alloys and Compounds, 399, pp. 242-244.
Pichon et al., Zirconium Nitrides Deposited by Dual Ion Beam Sputtering: Physical Properties and Growth Modelling, 1999, Applied Surface Science, 150, pp. 115-124.
Tarniowy et al., The effect of thermal treatment on the structure, optical and electrical properties of amorphous titanium nitride thin films,Thin Solid Films, vol. 311, (1997), pp. 93-100.
Starner, “Human-powered wearable computing” 35 (3 & 4) IBM Sys. J. 618-29 (1996).
Jones and Akridge, “A thin film solid state microbattery,” Solid State Ionics 53-56 (1992), pp. 628-634.
Amendment/Response to Non-Final Office Action dated Dec. 23, 2011, in U.S. Appl. No. 12/179,701.
Final Rejection dated Feb. 10, 2012, in U.S. Appl. No. 12/179,701.
Related Publications (1)
Number Date Country
20070184345 A1 Aug 2007 US
Provisional Applications (3)
Number Date Country
60737613 Nov 2005 US
60759479 Jan 2006 US
60782792 Mar 2006 US