Claims
- 1. A method for hydrothermally depositing a metal oxide layer in situ, comprising the steps:
injecting a precursor solution comprising: an organometallic, an oxidant, a surfactant, a chelating agent and water into a structure; heating the precursor solution to a temperature greater than 100° Centigrade; exposing a portion of the structure to the heated precursor solution; and depositing a metal oxide layer onto a surface in the structure that is exposed to the precursor solution.
- 2. The method for hydrothermally depositing the metal oxide layer of claim 1 wherein the metal oxide is zirconium oxide, the organometallic is Zr-n-propoxide and the depositing step comprises forming an iron oxide layer on the surface in the structure and bonding the zirconium oxide to the iron oxide layer.
- 3. The method for hydrothermally depositing the metal oxide layer of claim 1 further comprising the step:
pressurizing the structure to more than 300 psi during the deposition step.
- 4. The method for hydrothermally depositing the metal oxide layer of claim 1 further wherein the pressurizing step comprises monitoring the internal pressure of the structure with a pressure transducer and decreasing the internal pressure with a pressure relief valve if the internal pressure exceeds 2,000 psi.
- 5. The method for hyrothermally depositing the metal oxide layer of claim 1 wherein the heating step comprises monitoring the temperature of the precursor solution with a thermocouple and increasing the power to an electrical heater in thermal communication with the precursor solution if the temperature of the precursor solution is less than 100° Centigrade.
- 6. The method for hyrothermally depositing the metal oxide layer of claim 5 wherein the heating step comprises monitoring the temperature of the precursor solution with a thermocouple and decreasing the power to the electrical heater if the temperature of the precursor solution is greater than 300° Centigrade.
- 7. The method for hyrothermally depositing the metal oxide layer of claim 1 wherein the metal oxide deposited is zirconium oxide, the organometallic is Zr-n-propoxide and the depositing step comprises forming an iron oxide layer on the surface in the structure and bonding the zirconium oxide to the iron oxide layer.
- 8. The method for hyrothermally depositing the metal oxide layer of claim 7 wherein the oxidant is ZrO(ClO4)2 and the deposition step comprises a chemical reaction with the oxidant to bond the zirconium oxide to the iron oxide layer.
- 9. The method for hyrothermally depositing the metal oxide layer of claim 7 wherein the chelating agent is ethylenediaminetetraacetic acid and the injecting step comprises complexing suspended particles in the precursor solution with the chelating agent.
- 10. The method for hyrothermally depositing the metal oxide layer of claim 7 wherein the surface structure in the surface stainless steel and the depositing step comprises forming an iron oxide layer on the in the structure and bonding the zirconium oxide to the iron oxide.
- 11. A system for depositing a metal oxide layer, comprising:
a structure; a precursor solution comprising: an organometallic, a chelating agent, a surfactant, an oxidant and water; a first pressurized vessel in fluid communication with the structure for injecting the organometallic component of the precursor solution into the structure; a heater attached to the structure for heating the precursor solution that has been injected into the structure; a thermocouple for monitoring the temperature of the structure; a first controller in communication with the thermocouple for controlling the heater and maintaining the precursor solution at a temperature greater than 100° Centigrade within the structure; a pressure relieve valve in fluid communication with the structure for controlling the flow rate of the precursor solution through of the structure; wherein a layer of metal oxide is deposited on surfaces in the structure which are exposed to the precursor solution at a temperature greater than 100° Centigrade.
- 12. The system for depositing a metal oxide layer of claim 11 further comprising:
a second pressurized vessel in fluid communication with the structure for injecting the oxidant and the water components of the precursor fluid into the structure.
- 13. The system for depositing a metal oxide layer of claim 11 wherein the metal oxide layer is zirconium oxide and the organometallic is Zr-n-propoxide.
- 14. The system for depositing a metal oxide layer of claim 11 wherein the oxidant is ZrO(ClO4)2.
- 15. The system for depositing a metal oxide layer of claim 11 wherein the chelating agent is ethylenediaminetetraacetic acid.
- 16. The system for depositing a metal oxide layer of claim 11 further comprising:
a pressure transducer for monitoring the internal pressure of the structure; and a second controller in communication with the pressure transducer which controls the pressure relief valve; wherein the pressure relief valve decreases the flow rate of the precursor fluid through the structure if the internal pressure is below a predetermined lower level.
- 17. The system for depositing a metal oxide layer of claim 11 further comprising a pressure transducer for monitoring the internal pressure of the structure; and
a second controller in communication with the pressure transducer which controls the pressure relief valve; wherein the second controller increases the flow rate of the precursor solution through the pressure relief valve if the internal pressure is exceeds a predetermined upper level.
- 18. The system for depositing a metal oxide layer of claim 12 further comprising:
a pH probe for measuring the pH level of the precursor solution; and a third controller in communication with the pH probe, the second pressure vessel; wherein the third controller adjusts the ratio of the oxidant and the water so solution the pH level of the precursor between about 5.5 and 7.0.
- 19. The system for depositing a metal oxide layer of claim 11 further comprising:
an oxygen probe for measuring the oxygen level of the precursor solution.
- 20. The system for depositing a metal oxide layer of claim 11 further comprising:
a reference electrode for measuring the electrochemical corrosion potential of the precursor solution.
Parent Case Info
[0001] This application claims priority to pending U.S. Patent Application No. 60/422,745 filed Oct. 30, 2002 titled “Hydrothermal Deposition of Thin and Adherent Metal Oxide Coatings for High Temperature Corrosion Protection” which is hereby incorporated by reference.
Provisional Applications (1)
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Number |
Date |
Country |
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60422745 |
Oct 2002 |
US |