Patent Application
20230399566
The present application claims priority to Korean Patent Application No. 10-2022-0071700 filed on Jun. 13, 2022 in the Republic of Korea, the entire disclosure of which is incorporated herein by reference.
The present disclosure relates to quantum dots of non Cd composition and a method for fabricating the same, and more particularly, to I-III-VI based quantum dots and a method for fabricating the same. In particular, the present disclosure relates to I-III-VI based quantum dots for high efficiency visible light emission and a method for fabricating the same.
Quantum dots are semiconductor particles a few tens of nm or less in size, and as opposed to bulk materials, they exhibit various characteristics depending on the size and composition of the particles and have optical and electrical properties that the commonly used semiconducting materials do not have. The quantum dots have better optical properties such as narrower full width at half maximum and higher emission intensity than organic material based fluorescent dyes, and since they are made of inorganic based material, they have a stability advantage. Due to these characteristics, quantum dots are attracting significant attention as materials of color filters for displays, emission diodes (LEDs), biosensors, lasers and solar cells.
The present disclosure is directed to providing 1-III-VI based quantum dots with high efficiency visible light emission for use as display materials and a method for fabricating the same.
Quantum dots according to the present disclosure include a quantum dot core of Group 11-Group 13-Group 16; and Group 17 element attached to a surface of the quantum dot core.
In the quantum dot core, the Group 11 element may be at least one of Cu, Ag or Au, the Group 13 element may be at least one of In, Ga or Al, and the Group 16 element may be at least one of S, Se or Te.
The Group 11 element: the Group 13 element in the quantum dot core may be at a ratio of 1:1 to 1:10.
In the quantum dot core, the Group 13 element may be In1-xGax where 0.2≤x≤0.9.
The quantum dots may further include ligands on the surface of the quantum dot core.
The ligands may be at least one of thiols, amines, phosphines or a metal salt.
Specifically, the ligands may be at least one of 1-butanethiol, 1-hexanethiol, 1-octanethiol (OTT), 1-undecanethiol, decanethiol, 1-dodecanethiol (DDT), 1-hexadecanethiol, 1-octadecanethiol, amylamine, butylamine. hexylamine, heptylamine, octylamine, nonylamine, decylamine, didecylamine, tetradecylamine, hexadecylamine, octadecylamine, oleylamine (OLA), trihexylamine, trioctylamine (TOA), tridodecylamine, tributylphosphine oxide, tributylphosphine, trioctylphosphine oxide (TOPO), trioctylphosphine (TOP), ZnF2, ZnCl2, ZnBr2, ZnI2, GaF3, GaCl3, GaBr3, GaI3, AlF3, AlCl3, AlBr3 or AlI3.
The quantum dot core may include Ag, In, Ga and S, and the Group 17 element may be attached in an atomic or ionic form.
In an exemplary embodiment, the quantum dot core includes Ag, In, Ga and S, and the Group 17 element is I.
The quantum dots according to the present disclosure may be free of defect state by the Group 17 element.
The quantum dots may have an area ratio of band-edge emission of 90% or more on the entire PL spectrum of the quantum dot core.
The quantum efficiency (PL QY) of the quantum dot core may be 20% or more.
The emission center wavelength of the quantum dot core may be 520 to 540 nm.
The full width at half maximum of the quantum dot core may be 40 nm or less.
The size of the quantum dot core may be 3 to 6 nm.
Under 450 nm blue light excitation, the quantum dot core may show the molar extinction coefficient of 1×105 M−1 cm−1 or more.
The quantum dots according to the present disclosure may further include a shell on the quantum dot core, wherein the shell includes at least one of Group 12 and 13 elements and at least one of Group 16 elements.
In this instance, the shell may be a two or more component system composition including at least one of Al, Ga or In and at least one of S or Se.
Additionally, the shell may further include Zn.
The shell may be a multicomponent single or multi shell structure.
The area ratio of band-edge emission on the entire PL spectrum of the quantum dots including the shell may be 95% or more.
The quantum efficiency of the quantum dots including the shell may be 85% or more.
The emission center wavelength of the quantum dots including the shell may be 520 to 540 nm.
The full width at half maximum of the quantum dots including the shell may be 40 nm or less.
The size of the quantum dots including the shell may be 5 to 10 nm.
Under 450 nm blue light excitation, the quantum dots including the shell may show the molar extinction coefficient of 1×105 M−1 cm−1 or more.
A method for fabricating quantum dots according to the present disclosure includes forming a quantum dot core of Group 11-Group 13-Group 16 using a halide based metal salt precursor; and fabricating quantum dots including Group 17 element attached to a surface of the quantum dot core, wherein the Group 17 element is supplied from the halide based metal salt precursor.
The halide based metal salt precursor may include a Group 11 precursor and a Group 13 precursor, and the Group 17 element may be supplied from the Group 11 precursor and the Group 13 precursor.
In this instance, the Group 11 precursor and the Group 13 precursor may be at least one of AuF, AuCl, AuBr, AuI, CuF, CuCl, CuBr, CuI, AgF, AgCl, AgBr, AgI, InF3, InCl3, InBr3, InI3, GaF3, GaCl3, GaBr3 or GaI3.
The halide based metal salt precursor may include a Group 11 precursor and a Group 13 precursor, and the Group 11 element and the Group 13 element of the halide based metal salt precursor may be synthesized in powder state or as it is dissolved in a solvent.
The halide based metal salt precursor may further include a Group 16 precursor, and Group 16 element of the Group 16 precursor may be fed as it is dissolved in a solvent.
The solvent may be at least one of 1-octadecene (ODE), oleylamine (OLA), oleic acid (OA), dodecylamine, trioctylamine (TOA) or trioctylphosphine (TOP).
The method for fabricating quantum dots according to the present disclosure may further include forming a shell on the quantum dot core, wherein the shell includes at least one of Group 12 and 13 elements and at least one of Group 16 elements.
The method for fabricating quantum dots according to the present disclosure may further include, after forming the quantum dot core or forming the shell, feeding a ligand material to protect the surface of the quantum dots.
According to the present disclosure, it is possible to fabricate I-III-VI based quantum dots having quantum dot core including Ag, In, Ga and S (hereinafter, AIGS quantum dots) for increasing the quantum efficiency and reducing the defect state emission by surface control.
The high efficiency AIGS quantum dots fabricated according to the present disclosure may be synthesized into visible light emitting quantum dots with higher absorbance than InP quantum dots.
Compared to AIGS quantum dots synthesized using acetate or acetylacetonate (acac) based (i.e., non-halide based) metal salt precursors, the quantum dots synthesized using the halide based metal salt precursor according to the present disclosure include halogen on the surface and thus may be synthesized into quantum dots with enhanced band-edge emission and reduced defect state emission.
According to the present disclosure, it is possible to form AIGS quantum dot core exhibiting a remarkably low level of defect state emission and synthesize quantum dots with high color purity after the core/shell step.
According to the present disclosure, it is possible to reduce the synthesis time compared to the existing method.
According to the present disclosure, it is possible to synthesize green quantum dots with high blue absorbance.
According to the present disclosure, it is possible to obtained quantum dots with dominant band-edge emission for use as display materials.
Typically, compound semiconductor compositions made up of Group II-VI elements on the periodic table have been studied, but high efficiency quantum dots include hazardous materials to humans such as Cd or Pb, which makes it difficult to use in industrial applications. Compound semiconductors made up of Group III-V elements typically include InP quantum dots, and InP quantum dots have the quantum efficiency of 95% or more and the narrow full width at half maximum of 40 nm or less, and thus are used in a wide range of industrial applications. In display applications, InP quantum dots are used for a photoconversion layer on a blue LED. Green InP quantum dots require higher concentration than red InP quantum dots due to a difference in absorbance in the blue region depending on the particle size. The core diameter of the green InP quantum dots is about 2 to 2.5 nm, while the core diameter of the red quantum dots is 3 nm or more, and the difference in absorbance between them is a few fold. Accordingly, to have the equal absorbance, the green InP quantum dots need the photoconversion layer having the concentration that is a few times higher than the red InP quantum dots.
1-III-VI based quantum dots typically include CuInS2 (CIS) and AgInS2 (AIS), and typically include Group III elements and further include Ga. Usually, the emission from defect state, not band-edge, is seen, and the broad full width at half maximum of 100 nm or more is observed. By this reason, it is difficult to use as display materials, and they are used in solar cell or infrared device applications. To use 1-III-VI based quantum dots as display materials, they need to have the full width at half maximum of 50 nm or less, dominant band-edge emission and high quantum efficiency.
The accompanying drawings illustrate an exemplary embodiment of the present disclosure, and together with the foregoing detailed description, serve to provide a further understanding of the technical aspects of the present disclosure, and thus the present disclosure should not be construed as being limited to the accompanying drawings.
Quantum dots according to the present disclosure and a method for fabricating the same will be described in detail with reference to the accompanying drawings. The accompanying drawings are provided by way of illustration to convey the technical aspects of the present disclosure fully and completely. Accordingly, the present disclosure is not limited to the accompanying drawings and may be embodied in any other form. It is obvious that the technical and scientific terms as used herein have the meaning of the terms commonly understood by those skilled in the art unless defined otherwise. Additionally, where there is a certain detailed description of known functions and elements that may unnecessarily obscure the subject matter of the present disclosure in the following description and the accompanying drawings, the detailed description is omitted.
Referring to
The quantum dots 10 are surface-controlled by the Group 17 element 30 to increase the quantum efficiency and reduce the defect state emission. The quantum dot core 20 may be formed using a halide based metal salt precursor, and the Group 17 element is supplied from the halide based metal salt precursor.
In the quantum dot core 20, the Group 11 element may be at least one of Cu, Ag or Au, the Group 13 element may be at least one of In, Ga or Al, and the Group 16 element may be at least one of S, Se or Te. The quantum dots 10 may further include ligands 40 on the surface of the quantum dot core 20. The ligands 40 may include thiols such as 1-dodecanethiol (DDT). Additionally, in addition to the DDT, the ligands 40 may include various alkyl thiols such as 1-octanethiol, hexadecanethiol and decanethiol. Additionally, the ligands 40 may be derived from a solvent used in the fabrication method. Here, the solvent may be at least one of 1-octadecene (ODE), oleylamine (OLA), oleic acid (OA), dodecylamine, trioctylamine (TOA) or trioctylphosphine (TOP). The Group 17 element may be attached in an atomic or ionic form. For example, the Group 17 element is I. The Group 17 element may be F, Cl, Br.
The quantum dots 10 according to the present disclosure may be free of defect state by the Group 17 element. The quantum dots 10 include the Group 17 element, i.e., halogen on the surface, resulting in enhanced band-edge emission and reduced defect state emission. Accordingly, the quantum dots 10 may have an area ratio of band-edge emission of 90% or more on the entire PL spectrum of the quantum dot core 20. Due to the high area ratio of band-edge emission, the quantum dots 10 may have narrow full width at half maximum. The known I-III-VI based quantum dots include various defects therein, and exhibit various emission through the defects. That is, defect state emission is dominated, and the emission spectrum is broad. It can be used in lighting applications. In contrast, the quantum dots 10 according to the present disclosure exhibit the emission spectrum in a desired color, for example, green, at the very narrow full width at half maximum due to the extremely dominant band-edge emission, and thus can be used in display applications.
For example, the quantum dot core 20 may include Ag, In, Ga and S. In this case, the quantum dot core 20 may be referred to as AIGS core.
The Group 11 element: Group 13 element in the quantum dot core 20 may be at a ratio of 1:1 to 1:10. Within the ratio range, the quantum dot core 20 may emit visible light between blue and yellowish green. Additionally, the Group 13 element in the quantum dot core 20 may be In1-xGax where 0.2≤x≤0.9. Controlling the ratio between the Group 11 element and the Group 13 element is performed to control the characteristics of the wavelength, and controlling a composition ratio between In and Ga corresponding to the Group 13 element at the controlled ratio between the Group 11 element and the Group 13 element is the unique feature of the present disclosure. In this case, the emission center wavelength of the quantum dot core 20 may be 520 to 540 nm. The center wavelength may correspond to green emission, and may be, for example, 530 nm. The quantum dots 10 including the quantum dot core 20 may be used as display materials.
The quantum efficiency of the quantum dot core 20 may be 20% or more. It signifies that the quantum efficiency is at least 20%, and since defect state is removed by the Group 17 element, the quantum efficiency may be higher.
The full width at half maximum of the quantum dot core 20 may be 40 nm or less. To use the I-III-VI based quantum dots as display materials, the quantum dot core 20 needs to have the narrow full width at half maximum of 50 nm or less. Since the full width at half maximum may be 40 nm or less, the quantum dot core 20 of the quantum dots 10 according to the present disclosure may be used as display materials.
The size of the quantum dot core 20 may be 3 to 6 nm. For example, the average size may be 5.5 nm. When the size of the quantum dot core 20 is outside of the above-described range, it is undesirable in terms of quantum efficiency. The fabrication method according to the present disclosure may be suitable for the synthesis of the quantum dot core 20 in the above-described size.
Under 450 nm blue light excitation, the quantum dot core 20 may show the molar extinction coefficient of 1×105 M−1 cm−1 or more. This molar extinction coefficient is higher than that of InP quantum dots. That is, the quantum dot core 20 may be green quantum dots with high blue absorbance. As described above, according to the present disclosure, it is possible to form the quantum dot core 20 exhibiting a remarkably low level of defect state emission, especially, AIGS core.
Referring to
In this instance, the shell 50 may be a two or more component system composition including at least one of Al, Ga or In and at least one of S or Se. For example, the shell 50 may include Ga and S. Additionally, the shell 50 may further include Zn. The Ga precursor for forming the shell 50 may be GaCl3, and the Zn precursor may be ZnCl2.
The shell 50 may be a multicomponent single or multi shell structure. The multi shell may be double or triple. When the shell 50 is a double or triple or multi shell, the shell 50 may have a gradual increase in band gap in the outward direction, i.e., as it is farther away from the quantum dot core 20. The shell 50 has high passivation effect. Accordingly, the PL and quantum efficiency of the quantum dots 10 may be improved.
The area ratio of band-edge emission on the entire PL spectrum of the quantum dots 10 including the shell 50 may be 95% or more. Due to further including the shell 50, the area ratio of band-edge emission may be increased compared to the quantum dot core 20.
The quantum efficiency of the quantum dots 10 including the shell 50 may be 85% or more. Due to further including the shell 50, the quantum efficiency may be higher than the quantum efficiency of the quantum dot core 20. It signifies that the quantum efficiency of the quantum dots 10 is at least 85%, and the quantum efficiency of the quantum dots 10 may be further increased through band gap engineering of the shell 50.
The size of the quantum dots 10 including the shell 50 may be 5 to 10 nm. The size of the quantum dots 10 is the product of adding the thickness of the shell 50 to the quantum dot core 20. The quantum dots 10 including the quantum dot core 20 and further including the shell 50 may have the emission center wavelength of 520 to 540 nm which is the emission center wavelength of the quantum dot core 20. Likewise, due to further including the shell 50, the quantum dots 10 may have the narrower full width at half maximum than the full width at half maximum of the quantum dot core 20, and the full width at half maximum may be 40 nm or less.
Since the quantum dots 10 according to an embodiment of the present disclosure has the area ratio of band-edge emission of 95% or more on the entire PL spectrum, band-edge emission is observed, the full width at half maximum is as narrow as 40 nm or less and the quantum efficiency is high, and thus the quantum dots 10 can be used in display materials.
In the same way as the quantum dot core 20, the quantum dots 10 including the shell 50 may show the molar extinction coefficient of 1×105 M−1 cm−1 or more under 450 nm blue light excitation.
For example, a method for forming the AIGS quantum dot core will be described. To form the AIGS quantum dot core, the halide based metal salt precursor is used (step S10).
As described with reference to
In this instance, the Group 11 precursor and the Group 13 precursor may be at least one of AuF, AuCl, AuBr, AuI, CuF, CuCl, CuBr, CuI, AgF, AgCl, AgBr, AgI, InF3, InCl3, InBr3, InI3, GaF3, GaCl3, GaBr3 or GaI3.
The halide based metal salt precursor may include the Group 11 precursor and the Group 13 precursor, and the Group 11 element and the Group 13 element of the halide based metal salt precursor may be synthesized into the precursor in powder state or as it is dissolved in a solvent.
The halide based metal salt precursor may further include a Group 16 precursor, and the Group 16 element of the Group 16 precursor may be fed as it is dissolved in a solvent.
The solvent may be at least one of 1-octadecene (ODE), oleylamine (OLA), oleic acid (OA), dodecylamine, trioctylamine (TOA) or trioctylphosphine (TOP).
Preferably, for example, the quantum dot core 20 may be synthesized by mixing Ag precursor, I precursor, Ga precursor, S precursor and sulfur with the solvent to prepare a mixed solution and heating the mixed solution. The heating of the mixed solution may be performed in multi-step. First, degassing may be performed by heating at 120° C. Subsequently, the temperature may rise to the growth temperature. In this instance, N2 purging may be performed.
For example, the halide based metal salt precursor of the AIGS quantum dot core 20, for example, AgI, InI3, GaI3 and the solvent are put into a 3-neck flask and degassing is performed at the temperature of 120° C. or less for 30 minutes or more, followed by N2 substitution. Here, the solvent may be ODE, OLA, OA.
Subsequently, thiol based ligands such as DDT and sulfur are fed as the S precursor, and after the temperature rises to 260° C. or more, for example, 280° C., the quantum dot core synthesis reaction is completed within 10 minutes. In addition to the DDT, the S precursor may include alkyl thiols such as 1-octanethiol, hexadecanethiol, decanethiol. The sulfur may be mixed with the solvent such as OLA. In addition to the OLA, the solvent may include any other fatty amines such as dodecylamine, trioctylamine, trioctylphosphine.
After forming the quantum dot core 20, the method may further include the step of lowering the temperature to 200° C. or less and feeding an additional ligand material such as trioctylphosphine (TOP) to protect the quantum dot core surface (step S15). This step is performed to remove defects that may exist on the surface of the quantum dot core 20. In addition to the TOP, the additional ligand material may include OTT and DDT. This step is performed to improve the efficiency and stability of the quantum dot core 20 through additional ligand adsorption.
According to this method, the quantum dots 10 as shown in
Subsequently, referring further to
The step of forming the shell 50 is the step of forming the shell 50 on the quantum dot core 20, the shell 50 including at least one of Group 12 elements and Group 13 elements and at least one of Group 16 elements.
For example, when forming GaS shell, Ga precursor and S precursor may be fed, causing reaction at the temperature of 200° C. or more, for example, 240° C. for 2 hours, and after the temperature is lowered to 200° C. or less, an additional ligand material such as TOP, DDT may be fed to protect the surface of the core/shell quantum dots (step S25). The Ga precursor may be GaCl3, and the S precursor may be sulfur.
The shell may be formed using any other composition than GaS, and may be formed by applying a suitable shell stock solution onto the core. Additionally, the step of forming the shell may be performed consecutively twice or more times. In this instance, at least one of the type, concentration or reaction temperature of the shell stock solution in each step and the time may vary. In the second reaction, the temperature may be higher or the time may be longer. According to this method, the quantum dots 10 including the shell 50 as shown in
According to the present disclosure, to increase the quantum efficiency of the AIGS quantum dots and reduce the defect state emission, the surface controlled quantum dots may be fabricated. The high efficiency AIGS quantum dots fabricated according to the present disclosure may be synthesized into visible light emitting quantum dots with higher absorbance than InP quantum dots. According to the present disclosure, green quantum dots with high blue absorbance may be synthesized. Compared to the AIGS quantum dots synthesized using acetate or acetylacetonate based (i.e., non-halide based) metal salt precursors, the quantum dots synthesized using the halide metal salt precursor according to the present disclosure include halogen on the surface, and thus may be synthesized into quantum dots with enhanced band-edge emission and reduced defect state emission. According to the present disclosure, it is possible to form AIGS core exhibiting a remarkably low level of defect state emission, and synthesize quantum dots having high color purity after the core/shell step. According to the present disclosure, it is possible to reduce the synthesis time compared to the existing method.
The step S25 is the step of feeding the ligand material after the step of forming the shell 50 to protect the surface of the quantum dots 10. The additional ligand material such as TOP, OTT or DDT may be fed to remove defects that may exist on the surface of the quantum dots 10, thereby further improving the efficiency and stability of the quantum dots 10.
Hereinafter, the present disclosure will be described in more detail by describing experimental example.
To form the AIGS quantum dot core, AgI, InI3, GaI3, ODE and OLA are put into a 3-neck flask, and degassing is performed at 120° C. under a vacuum for 30 minutes, followed by N2 substitution. Two experiments are performed in which the amount of Ag is 0.2 mmol and 0.4 mmol (examples 1 and 2, respectively).
DDT and sulfur S (mixed with OLA) are fed and heated up to 280° C., causing reaction for 5 minutes. TOP is fed at 180° C., causing reaction for 20 minutes to protect the quantum dot core surface. The quantum dot core fabrication is completed.
The quantum dot core is purified using a polar solvent, and the quantum dot core, GaCl3 and sulfur S (mixed with OLA) are put into a 3-neck flask, causing reaction at 240° C. for 2 hours to form GaS shell. DDT and TOP are fed at 200° C., causing reaction for 20 minutes to protect the surface of the core/shell quantum dots. The shell formation is completed.
Subsequently, the core/shell quantum dots are purified using a polar solvent at room temperature for the next experiment and analysis.
AIGS quantum dots are synthesized using a non-halide based precursor. Ag acetate (AgC2H3O2), Ga acetylacetonate [Ga(C5H7O2)3], In acetate, ODE and OLA are put into a 3-neck flask and degassing is performed at 120° C. under a vacuum for 30 minutes, followed by N2 substitution. Two experiments are performed in which the amount of Ag is 0.2 mmol and 0.4 mmol (comparative examples 1 and 2, respectively).
Subsequently, the quantum dot core and core/shell quantum dots are fabricated by the same process as the example.
The absorption and emission characteristics are evaluated in colloidal state by dispersing in a non-polar solvent such as hexane after the precipitation of the synthesized quantum dot core and core/shell quantum dots in a polar solvent.
To analyze the emission characteristics of the synthesized nanocrystals (quantum dot core and core/shell quantum dots), the nanocrystals are dispersed in hexane, and PL is measured using PL equipment (Darsa Pro-5200, PSI Co. Ltd) using 500 W Xenon arc lamp as a light source at room temperature, and to analyze the size and shape of the dispersed nanocrystals, high resolution transmittance electron microscopy (HRTEM) (JEOL JEM 4010) is used, and to identify the element attached to the particle surface of the core, X-ray photoelectron spectroscopy (XPS) (Thermo Scientific Inc., K-alpha) is used.
The emission characteristics of the AIGS core and AIGS/GS core/shell synthesized according to comparative example are shown in Table 1.
The defect state emission peak area of the AIGS core compared to the band-edge emission is 20%:80% in comparative example 2 (0.4 mmol) and 1%:99% in comparative example 1 (0.2 mmol), showing that the band-edge emission is rare and the defect state emission is dominant.
The defect state emission peak area of the AIGS/GS core/shell compared to the band-edge emission is 80%:20% in comparative example 2 (0.4 mmol) and 50%:50% in comparative example 1 (0.2 mmol). The ratio of defect state emission is lower than that of the core, but the defect state emission still has high intensity, and this level is difficult to use in industrial applications.
The emission characteristics of the AIGS core and AIGS/GS core/shell synthesized according to example are shown in Table 2.
It is found that the quantum efficiency of the AIGS/GS core/shell synthesized using the halide based precursor is 86% and 85% respectively when the amount of Ag is 0.2 mmol (example 1) and 0.4 mmol (example 2). Defect state-induced emission is not observed, signifying that the defect state is removed.
When comparing
The shelling process is equally performed on the non-halide based core and the halide based precursor core. When comparing
For use of light emitting materials in display applications, materials having high color purity are required, and as the full width at half maximum is narrower, the color purity is higher. As the defect state emission intensity is higher, the full width at half maximum increases and the color purity decreases, and it is difficult to use in industrial applications. Accordingly, the quantum dots synthesized using the halide based precursor are suitable for use in the industrial applications due to the significantly low defect state emission.
The defect free quantum dots according to the present disclosure can be seen through the surface analysis results using XPS.
As shown in
It can be seen from the XPS results that halide is attached to the surface of the quantum dot core using the halide based precursor, and through this, the defect state is removed. The halide removes dangling bonds present on the surface of the quantum dot core, thereby improving the stability. The presence of the dangling bonds in the PL characteristics causes the reduced quantum efficiency due to electron trap sites and additional emission by the defect state, and according to the present disclosure, the removal of the dangling bonds by halogen increases the total quantum efficiency, reduces the defect state emission and increases the band-edge emission.
As a result of determining the size and distribution of particles through the TEM image of the AIGS quantum dots synthesized using the non-halide based precursor and the halide based precursor, as shown in
As a result of determining a size distribution of 50 particles randomly selected in the TEM image of the synthesized quantum dot core, it is found that the size distribution of the quantum dots synthesized through the non-halide based precursor is 4.7±0.7 nm as shown in
It is found that the distribution of the core and the distribution of the core/shell have the same average size, but synthesis using the halide based precursor has uniform distribution. The uniformity of particles may act as an important variable in the molar extinction coefficient (a measure of how much 1 M quantum dot particles can absorb light) comparison as described below. Since the number of moles of the quantum dots is set according to the size of the quantum dot core, as the uniformity is higher, a more accurate value can be obtained in the extinction coefficient calculation.
In an attempt to increase the low absorbance of green InP quantum dots, as a result of comparing the molar extinction coefficient (F) measured under blue light (450 nm) excitation between the InP quantum dots and the AIGS quantum dots synthesized using the halide based precursor, it is found that the AIGS quantum dots (i.e., 8.07×105 M−1 cm−1) have the extinction coefficient that is about 28 times or more higher than the InP quantum dots (i.e., 2.87×104 M−1 cm−1). Here, the extinction coefficient is calculated by the Beer-Lambert law.
This work was financially supported by the Technology Innovation Program (20010737, 20016332) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea), the National Research Foundation of Korea (NRF) grant funded by Ministry of Science, ICT & Future Planning (MSIP) (2020M3H4A3082656), Basic Science Research Program through the NRF funded by Ministry of Education (2015R1A6A1A03031833).
While the present disclosure has been hereinabove illustrated and described with respect to particular embodiments, the present disclosure is not limited thereto and various modifications and changes will be made thereto by those skilled in the art without departing from the technical aspects of the present disclosure.
| Number | Date | Country | Kind |
|---|---|---|---|
| 10-2022-0071700 | Jun 2022 | KR | national |
