Bergman et al., Photoluminescence Related to the 2-Dimensional Electron Gas in Modulation Doped GaN/AlGaN Structures, Mat. Res. Soc. Symp. Proc. vol. 395, 1996 Materials Research Society, pp595-600, Dec. 1995.* |
I. Akasaki, et al. “Growth of GaN and AlGaN for UV/blue p-n junction diodes” Journal of Crystal Growth 128 (1993, pp. 379-383. |
P. Kung, et al. “High quality AlN and GaN epilayers grown on (00.1) sapphire, (100), and (111) silicon substrates” Appl. Phys. Lett. 66 (22), May 29 1995, pp. 2958-2960. |
Shuji Nakamura, et al. “InGaN-Based Multi-Quantum-Well-Structure Laser Diodes” Jpn. J. Appl. Phys. vol. 35 (1996), pp. L74-L76, Part 2, No. 1B, Jan. 15, 1996. |