Claims
- 1. A method of forming a multi-quantum well laser diode comprising the successive steps of:a) growing a buffer layer on a cleaned substrate; b) growing a lower confinement layer on the buffer layer; c) doping the lower confinement layer with a n-type dopant; d) growing an active layer by growing, in sequence, successive layers of GaInN/GaN; e) repeating step (d) until from about 5 to about 30 period GRINSCH structure is formed comprising a plurality of layers of GaxIN1−xN/GaN(0≦x≦1); f) growing an upper confinement layer on the active layer; g) doping the upper confinement layer with a p-type dopant; annealing and forming contacts on the upper and lower confinement layers.
- 2. The method of claim 1, wherein said buffer layer is GaN.
- 3. The method of claim 2, wherein the GaN buffer layer is formed to a thickness of about 20-4000 Å.
- 4. The method of claim 1, wherein the lower confinement layer is formed to a thickness of about 3 μm thick.
- 5. The method of claim 4, wherein the lower confinement layer is formed of GaN.
- 6. The method of claim 5, wherein the lower confinement layer is doped with Si.
- 7. The method of claim 1, wherein the upper confinement layer is formed to a thickness of about 0.25 μm to about 0.8 μm thick.
- 8. The method of claim 7, wherein the upper confinement layer is doped with an element selected from the group consisting of Mg, Be, Zn, Cd, or is co-doped.
- 9. The method of claim 8, wherein the upper confinement layer is formed of GaN.
- 10. The method of claim 1, including forming the active layers in a GRINSCH structure formed of a plurality of 33 Å GaInN layers, each such layer adjacent to a 66 Å GaInN layer.
- 11. The method of claim 1, wherein the active layer comprises 10 successive GaInN/GaN layers.
- 12. A method of forming a multi-quantum well laser diode comprising the successive steps of:a) growing a buffer layer on GaN on a cleaned substrate; b) growing a lower confinement layer of GaN: Si on the buffer layer; c) growing an active layer by growing, in sequence, a GRINSCH structure having successive layers of GaxIn1−xN/GaN (1≧x≧0); d) repeating step (c) until from about 10 to about 15 layers are formed of GaxIn1−xN/GaN (0→1); e) growing an upper confinement layer of GaNi:Mg on the active layer; f) annealing and forming contacts on the upper and lower confinement layers.
- 13. The method of claim 12, wherein x=0.89.
Parent Case Info
This application is a divisional of U.S. patent application Ser. No. 09/526,134, now U.S. Pat. No. 6,459,086 filed on Mar. 15, 2000.
Government Interests
This invention is made with government support under Contract No. BMDO/ONR-N-00014-93-1-0235, DARPA/ONR-N-00014-95-1-0983 and DARPA/ONR Contract No. N00014-96-1-0714. The government has certain rights in the invention.
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