BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a schematic view for explaining example 1 of an image display device according to the invention;
FIG. 2 is an explanatory view for the principle of an MIM type electron emitter;
FIG. 3 is a view showing manufacturing steps of a thin film electron emitter of the invention;
FIG. 4 is a view succeeding to FIG. 3 showing manufacturing steps of the thin film electron emitter of the invention;
FIG. 5 is a view succeeding to FIG. 4 showing manufacturing steps of the thin film electron emitter of the invention;
FIG. 6 is a view succeeding to FIG. 5 showing manufacturing steps of the thin film electron emitter of the invention;
FIG. 7 is a view succeeding to FIG. 6 showing manufacturing steps of the thin film electron emitter of the invention;
FIG. 8 is a view succeeding to FIG. 7 showing manufacturing steps of the thin film electron emitter of the invention;
FIG. 9 is a view succeeding to FIG. 8 showing manufacturing steps of the thin film electron emitter of the invention;
FIG. 10 is a view succeeding to FIG. 9 showing manufacturing steps of the thin film electron emitter of the invention;
FIG. 11 is a view succeeding to FIG. 10 showing manufacturing steps of the thin film electron emitter of the invention;
FIG. 12 is a view for explaining the manufacturing method of a front substrate;
FIG. 13 is a view for the cross-section along the line A-A′ and the cross-section along the line B-B′ in a state of bonding a back substrate to the front substrate;
FIG. 14 is a view for explaining manufacturing steps of the image display device of the invention;
FIG. 15 is a view explaining the temperature dependence of the desorption amount of moisture in the anodic oxide film (the dehydration amount of the anodic oxide film) manufactured in the Example of the invention by conducting thermal desorption analysis for the anodic oxide film;
FIG. 16 is a view for explaining an example of a result of conducting XPS analysis for the quantification of the water content contained in the anodic oxide film of aluminum;
FIG. 17 is a view for explaining the result of calculation for the hydrate-alumina ratio in the alumina film determined by evaluation according to the analysis of FIG. 16 on every annealing process;
FIG. 18 is a view showing the result of measuring the degraded characteristic to the time of the manufactured MIM diode on every annealing process conditions; and
FIG. 19 is a view showing a correlation between the availability ratio of diodes estimated based on the result of FIG. 18 and the hydrate-alumina ratio in an alumina film calculated based on the result of FIG. 17.