Patent Application
20060065895
The present application claims priority from Japanese application JP 2004-288489 filed on Sep. 30, 2004, the content of which is hereby incorporated by reference into this application.
The present invention relates to an image display device, and particularly relates to an image display device also referred to as an emissive flat panel display using thin-film electron emitter arrays.
An image display device (Field Emission Display: FED) using field emission cathodes that are microscopic and can be integrated has been developed. The field emission cathodes are also referred to as thin-film cathodes. Cathodes of such an image display device are categorized into field emission cathodes and hot electron emission cathodes. The former includes Spindt type cathodes, surface-conduction electron emission cathodes, carbon-nanotube cathodes, and the like. The latter includes thin-film cathodes of an MIM (Metal-Insulator-Metal) type comprised of a metal-insulator-metal lamination, an MIS (Metal-Insulator-Semiconductor) type comprised of a metal-insulator-semiconductor lamination, a metal-insulator-semiconductor-metal type, and the like.
For example, the MIM type has been disclosed in Patent Document 1. An MOS type (disclosed in Non-Patent Document 1 or the like) has been reported as the metal-insulator-semiconductor type. An HEED type (disclosed in Non-Patent Document 2 or the like), an EL type (disclosed in Non-Patent Document 3 or the like), a porous silicon type (disclosed in Non-Patent Document 4 or the like), etc. have been reported as the metal-insulator-semiconductor-metal type.
For example, an MIM type cathode is disclosed in Patent Document 2. The structure and operation of the MIM type cathode will be described below. That is, the MIM type cathode has a structure in which an insulator is inserted between an upper electrode and a base electrode. When a voltage is applied between the upper electrode and the base electrode, electrons near the Fermi level in the base electrode penetrate a barrier due to a tunneling phenomenon, so as to be injected into a conductive band of the insulator serving as an electron accelerator. Hot electrons formed thus flow into a conductive band of the upper electrode. Of the hot electrons, ones reaching the surface of the upper electrode with energy not smaller than a work function φ of the upper electrode are released to the vacuum.
Patent Document 1:
Patent Document 2:
Non-Patent Document 1:
Non-Patent Document 2:
Non-Patent Document 3:
Non-Patent Document 4:
Such cathodes are arranged in a plurality of rows (for example, horizontally) and a plurality of columns (for example, vertically) so as to form a matrix. A large number of phosphors arrayed correspondingly to the cathodes respectively are disposed in the vacuum. Thus, an image display device can be configured. In order to perform image display in the image display device configured thus, a driving method called “one line at a time driving scheme” is adopted typically. This is a system in which, when 60 still images (60 frames) per second are displayed, each frame is displayed by scan line (horizontally). Accordingly, all the cathodes corresponding to the number of data lines on one and the same scan line are activated concurrently. A current flowing into the scan lines which are active can be obtained by multiplying, by the total number of scan lines, a current consumed by cathodes included in sub-pixels (sub-pixels constituting a color pixel for full color display). This scan line current leads to a voltage drop along the scan lines due to wiring resistance, so as to prevent uniform operation of the cathodes. Particularly in order to attain a large-size display device, the voltage drop caused by the wiring resistance of the scan lines becomes a large problem.
In order to solve the problem, it is necessary to reduce the wiring resistance of the scan lines. In the case of a thin-film cathode, it can be considered to reduce the resistance in a base electrode or an upper bus electrode (scan line) for supplying power to an upper electrode. However, when the thickness of the base electrode is increased to reduce the resistance, the irregularities of the wiring may be intense, the quality of an electron accelerator may deteriorate, or the upper bus electrode or the like may be broken easily. Thus, there occurs a problem in reliability. It is therefore preferable to use a method for reducing the resistance of the upper bus electrode so as to use the upper bus electrode as a scan line.
In order to reduce the resistance of the upper bus electrode, it is effective to form the upper bus electrode as a laminated wire in which aluminum Al is sandwiched in chrome Cr from above and below. An upper electrode of the cathode is formed from the upper bus electrode to the cathode so as to be supplied with power from the upper bus electrode.
That is, the power supply path from the upper bus electrode to the upper electrode is formed by the upper electrode formed to extend onto the upper bus electrode along the side edge of an interlayer insulator for insulating the upper electrode from the base electrode outside the electron accelerator put between the upper electrode serving as a cathode and the base electrode.
In the MIM type cathode, in order to transmit hot electrons, the upper electrode is formed to be extremely thin to be not thicker than 10 nm. To this end, it has been a problem to attain tapering with a low angle in the side edge of the interlayer insulator. In addition, in the image display device using such MIM type cathodes, a frame glass is put between a cathode substrate and a phosphor substrate while vacuum sealing is attained using frit glass. To this end, soda lime based glass whose thermal expansion coefficient is approximate to that of the frit glass is used for the cathode substrate and the phosphor substrate. The soda lime based glass separates out sodium Na in heat treatment in a process of vacuum sealing. The separated sodium Na contaminates electron emitters (cathodes). Thus, how to suppress the contamination of the cathodes with Na has been a problem.
Further, in the device in which the upper bus electrodes serving as scan lines and the base electrodes of the cathodes serving as data lines are disposed in a matrix, it is requested to make the capacitance between adjacent lines as small as possible so as to reduce the current load and the power consumption of the driving circuit. In order to reduce the capacitance between the lines, how to thicken each interlayer insulator has been a problem.
An object of the present invention is to provide an image display device in which the taper angle of an interlayer insulator is made low enough to prevent an upper electrode from being broken, so that the interlayer insulator is made thick enough to reduce the capacitance, while a cathode is prevented from being contaminated with sodium separated from glass of a substrate.
In order to attain the foregoing object, according to the present invention, a laminated film of a silicon oxide film and a silicon nitride film, a laminated film of a silicon oxynitride film and a silicon nitride film, or a silicon oxynitride film having a composition gradient in which the concentration of nitrogen is low on the glass substrate side (field insulator side) and high on the surface side abutting against the upper electrode, is used as the interlayer insulator.
That is, the present invention provides an image display device including:
a cathode substrate including a large number of thin-film cathodes disposed in a matrix, each of the thin-film cathodes including a base electrode, an upper electrode and an electron accelerator retained between the base electrode and the upper electrode, each of the thin-film cathodes emitting electrons from the side of the upper electrode in a region where the electron accelerator is laminated, in response to a voltage applied between the base electrode and the upper electrode; and
a phosphor substrate including phosphor layers of a plurality of colors disposed correspondingly to the cathodes respectively; wherein:
the base electrode and the upper electrode are insulated from each other outside the aforementioned region of the electron accelerator by a laminated insulator of a field insulator and an interlayer insulator, the field insulator being contiguous to the electron accelerator, the interlayer insulator being formed on the field insulator;
the upper electrode is formed to extend from a side edge of the laminated insulator of the field insulator and the interlayer insulator so as to cover the upper bus electrode located on the interlayer insulator and for feeding power to the upper electrode; and
the interlayer insulator is made of a laminated film of a silicon oxide film and a silicon nitride film, the silicon oxide film being located on the field insulator side, the silicon nitride film being located on the upper bus electrode side.
The present invention also provides an image display device including:
a cathode substrate including a large number of thin-film cathodes disposed in a matrix, each of the thin-film cathodes including a base electrode, an upper electrode and an electron accelerator retained between the base electrode and the upper electrode, each of the thin-film cathodes emitting electrons from the side of the upper electrode in a region where the electron accelerator is laminated, in response to a voltage applied between the base electrode and the upper electrode; and
a phosphor substrate including phosphor layers of a plurality of colors disposed correspondingly to the cathodes respectively; wherein:
the base electrode and the upper electrode are insulated from each other outside the aforementioned region of the electron accelerator by a laminated insulator of a field insulator and an interlayer insulator, the field insulator being contiguous to the electron accelerator, the interlayer insulator being formed on the field insulator;
the upper electrode is formed to extend from a side edge of the laminated insulator of the field insulator and the interlayer insulator so as to cover the upper bus electrode located on the interlayer insulator and for feeding power to the upper electrode; and
the interlayer insulator is made of a laminated film of a silicon oxynitride film and a silicon nitride film, the silicon oxynitride film being located on the field insulator side, the silicon nitride film being located on the upper bus electrode side.
The present invention also provides an image display device including:
a cathode substrate including a large number of thin-film cathodes disposed in a matrix, each of the thin-film cathodes including a base electrode, an upper electrode and an electron accelerator retained between the base electrode and the upper electrode, each of the thin-film cathodes emitting electrons from the side of the upper electrode in a region where the electron accelerator is laminated, in response to a voltage applied between the base electrode and the upper electrode; and
a phosphor substrate including phosphor layers of a plurality of colors disposed correspondingly to the cathodes respectively; wherein:
the base electrode and the upper electrode are insulated from each other outside the aforementioned region of the electron accelerator by a laminated insulator of a field insulator and an interlayer insulator, the field insulator being contiguous to the electron accelerator, the interlayer insulator being formed on the field insulator;
the upper electrode is formed to extend from a side edge of the laminated insulator of the field insulator and the interlayer insulator so as to cover the upper bus electrode located on the interlayer insulator and for feeding power to the upper electrode; and
the interlayer insulator is made of a laminated film of a silicon oxynitride film and a silicon nitride film formed on the silicon oxynitride film, and the silicon oxynitride film has a concentration gradient in which nitrogen concentration is low on the field insulator side and high on the silicon nitride film side.
The present invention also provides an image display device including:
a cathode substrate including a large number of thin-film cathodes disposed in a matrix, each of the thin-film cathodes including a base electrode, an upper electrode and an electron accelerator retained between the base electrode and the upper electrode, each of the thin-film cathodes emitting electrons from the side of the upper electrode in a region where the electron accelerator is laminated, in response to a voltage applied between the base electrode and the upper electrode; and
a phosphor substrate including phosphor layers of a plurality of colors disposed correspondingly to the cathodes respectively; wherein:
the base electrode and the upper electrode are insulated from each other outside the aforementioned region of the electron accelerator by a laminated insulator of a field insulator and an interlayer insulator, the field insulator being contiguous to the electron accelerator, the interlayer insulator being formed on the field insulator;
the upper electrode is formed to extend from a side edge of the laminated insulator of the field insulator and the interlayer insulator so as to cover the upper bus electrode located on the interlayer insulator and for feeding power to the upper electrode; and
the interlayer insulator is made of a silicon oxynitride film having a concentration gradient in which silicon oxide concentration is high on the field insulator side and silicon nitride concentration is high on the upper bus electrode side.
The upper bus electrode according to the present invention is formed to have a three-layer structure in which aluminum Al or an aluminum alloy is used as a metal film intermediate layer, and sandwiched between a metal film lower layer and a metal film upper layer both made of chromium Cr or a chromium alloy from above and below. Further, the metal film lower layer projects over the metal film intermediate layer on one side surface of the upper bus electrode so as to be connected to the upper electrode. On the other side surface of the upper bus electrode opposite to the aforementioned one side surface, the metal film lower layer forms an undercut with respect to the metal film intermediate layer, and the upper electrode is separated from adjacent pixels by the undercut.
According to the present invention, the taper angle of the edge of the interlayer insulator can be made small enough to prevent disconnection in the upper electrode formed between the cathode and the upper bus electrode. In addition, due to the small taper angle of the interlayer insulator, it is easy to thicken the interlayer insulator. Accordingly, it is possible to reduce the capacitance of the crossing portion where a scan signal electrode crosses the data line, that is, a scan signal electrode crosses the base electrode of the cathode and is connected to the upper electrode. Thus, high-speed driving can be attained so that an image can be displayed with high definition. Further, the cathode can be prevented from being contaminated with sodium separated from the substrate glass. Thus, it is possible to provide an image display device in which deterioration of performance of each cathode can be suppressed, the life of the image display device can be prolonged, and electron emission can be performed with high efficiency.
The best mode for carrying out the present invention will be described below in detail with reference to the drawings and in connection with embodiments.
First, an example of an image display device according to the present invention will be described as an image display device using hot electron emission MIM type cathodes. However, the present invention is not limited to such MIM type cathodes. Not to say, the present invention is applicable to an image display device using various electron emission devices described in the chapter of the background art, in the same manner.
In the cathode substrate 10, there are formed base electrodes 11, a metal film lower layer 16, a metal film intermediate layer 17, a metal film upper layer 18, protective insulators (field insulators) 14, other functional films which will be described later, etc. The base electrodes 11 constitute signal lines (data lines or data electrodes) connected to a data line driving circuit 50. The metal film lower layer 16, the metal film intermediate layer 17 and the metal film upper layer 18 form scan lines (scan electrodes) 21 connected to a scan line driving circuit 60 and disposed perpendicularly to the data lines. Each cathode (electron emission portion or electron source) is formed out of an upper electrode (not shown) connected to the upper bus electrode and laminated to the base electrode 11 through the insulator. Electrons are released from the portion of an insulator (tunneling insulator) 12 formed out of a thin layer portion of the insulator.
Referring to
The spacers 30 are disposed on the upper bus electrodes of the scan electrodes 21 of the cathode substrate 10 so as to be hidden under the black matrix 120 of the phosphor substrate. The base electrodes 11 are connected to the data line driving circuit 50, and the scan electrodes 21 serving as the upper bus electrodes are connected to the scan line driving circuit 60.
In the cathode structure according to Embodiment 1, the upper bus electrode is formed to have a laminated structure in which a low-resistance wire of Al or an Al alloy is sandwiched in Cr, a Cr alloy or the like having heat resistance and oxidation resistance. Accordingly, the upper electrode 13 can be processed to be self-aligned, and the upper bus electrode can be produced so that the upper bus electrode will not deteriorate even after the sealing process. Thus, a voltage drop due to the wiring resistance of the display device can be suppressed. In addition, due to the thick spacer electrodes 21, the thin-film cathodes can be prevented from being mechanically damaged by the spacers bearing the atmospheric pressure.
In each of the MIM type cathodes shown in
The scan electrode 21 serving as the upper bus electrode is made of a three-layer lamination in which Al or an Al alloy high in oxidation resistance is sandwiched in Cr or a Cr alloy from above and below. Due to the heat resistance and the oxidation resistance of Cr or the Cr alloy, damage on wiring can be avoided in the process or the like where the panel of the image display device is sealed at a high temperature. In addition, the request for reduction in resistance of wiring can be also satisfied when the wiring is thickened by use of the Al or Al alloy layer low in resistivity. For example, an Al—Nd alloy including with 2 at % of Nd can be used as the Al alloy, and a Cr—Mo alloy including 50 wt % of Mo can be used as the Cr alloy. Here, description will be made on the assumption that Al may include an Al alloy and Cr may include a Cr alloy.
Next, an embodiment of the method for manufacturing the image display device according to the present invention will be described with reference to
After the film formation, the base electrode 11 having a stripe shape is formed by a patterning process and an etching process (
Next, a protective insulator (also referred to as “field insulator”) 14 for limiting an electron emission portion and preventing electric field concentration on the edge of the base electrode 11, and an insulator (also referred to as “tunneling insulator”) 12 are formed. First, a portion which will be an electron emission portion on the base electrode 11 as shown in
Next, an interlayer insulator 15, and a metal film serving as an upper bus electrode serving as a power feeder to the upper electrode 13 and a spacer electrode for disposing a spacer 30 so as to electrically connect the spacer 30 with the upper bus electrode are formed, for example, by a sputtering method or the like (
Here, Al is used for the metal film intermediate layer 17, and Cr is used for the metal film lower layer 16 and the metal film upper layer 18. The film thickness of Al is made as thick as possible in order to reduce the wiring resistance. Here, the metal film lower layer 16 is made 100 nm thick, the metal film intermediate layer 17 is made 4 μm thick, and the metal film upper layer 18 is made 100 nm thick.
Successively, the metal film upper layer 18 is formed into a stripe shape perpendicular to the base electrode 11 by patterning and etching. For example, wet etching with a cerium ammonium nitrate solution is used for the etching (
Successively, the interlayer insulator 15 is etched to open an electron emission portion. The electron emission portion is formed in a part of a perpendicular portion of a space surrounded by one base electrode 11 of a sub-pixel and two upper bus electrodes perpendicular to the base electrode 11. For example, dry etching with an etching agent having CF4 or SF6 as its main component can be used for the etching (
Finally, the upper electrode film 13 is formed. For example, sputtering film formation is used as the method for forming the film. A laminated film of Ir, Pt and Au is used as the upper electrode 13, and the film thickness is made 6 nm by way of example. In this event, the upper electrode 13 has a structure in which the upper electrode 13 is cut by the appentice structure in one of the two upper bus electrodes sandwiching the electron emission portion, while the upper electrode 13 is connected to the other upper bus electrode through the contact portion of the metal film lower layer 16 without disconnection so as to be supplied with power (
In Embodiment 1, the interlayer insulator 15 is constituted by a laminated film of a lower layer 15-1 and an upper layer 15-2. The lower layer 15-1 is made of a silicon oxide film SiO2, and formed on the field insulator 14, and a silicon nitride film SiN is formed thereon as the upper layer 15-2. A photo-resist 26 is applied onto the laminated film. The photo-resist 26 is applied to expose a region so as to be formed as a taper.
The silicon oxide film SiO2 and the silicon nitride film SiN have different dry etching rates. The dry etching rate of the silicon oxide film SiO2 15-1 having a large content of oxygen is low, and the dry etching rate of the silicon nitride film SiN 15-2 having a large content of nitrogen is higher than that of the silicon oxygen film SiO2. The silicon nitride film SiN 15-2 is etched at a higher rate than the silicon oxide film SiO2 15-1 on the glass substrate side (field insulator 14 side) regardless of the amount of additional oxygen in dry etching gas. Thus, a taper 19 as shown in
After the etching, the photo-resist 26 is removed, and the upper electrode 13 is formed. In this event, the upper electrode 13 is formed to extend from the cathode along the taper 19 of the interlayer insulator 15 and cover the upper bus electrode. Since there is no step in the interlayer insulator 15, there is no fear that the upper electrode 13 is disconnected in this portion.
The interlayer insulator is formed so that a silicon compound having a high content of nitrogen high in Na blocking capacity is laminated on a silicon compound having a high content of oxygen low in permittivity. Accordingly, the crossing portion between the data line (base electrode 11) and the upper electrode 13 (scan line, upper bus electrode) can be made low in capacitance, while contamination of the cathode with sodium Na diffused from the glass substrate can be blocked. It is therefore possible to obtain an image display device high in reliability, high in definition and long in life.
In Embodiment 2, the interlayer insulator 15 is constituted by a laminated film of a lower layer 15-3 and an upper layer 15-2. The lower layer 15-3 is made of a silicon oxynitride film SiO2 (x) N (y), and formed on the field insulator 14. Here, (x) designates the content of silicon oxide SiO2, and (y) designates the content of silicon nitride SiN. A silicon nitride film SiN is formed as the upper layer 15-2 on the silicon oxynitride film SiO2(x)N(y).
The silicon oxynitride film SiO2(x)N(y) 15-3 is a film with a composition gradient in which the value (x) is remarkably larger than the value (y) on the field insulator 14 side, that is, the silicon oxynitride film SiO2(x)N(y) 15-3 is rich in silicon oxide SiO2 on the field insulator 14 side, while the value (y) is remarkably larger on the upper-layer silicon nitride film SiN side, that is, the silicon oxynitride film SiO2(x)N(y) 15-3 is rich in silicon nitride SiN on the silicon nitride film SiN side. A photo-resist 26 is applied onto the laminated film of the silicon oxynitride film SiO2(x)N(y) and the silicon nitride film SiN so as to expose a region to be formed as a taper.
For the same reason as in Embodiment 1, the dry etching rate of the silicon oxynitride film SiO2(x)N(y) 15-3 on the field insulator 14 side with a rich oxygen content is low while the dry etching rate of the silicon oxynitride film SiO2(x) N (y) 15-3 on the silicon nitride film SiN 15-2 side is high. A taper is formed in the silicon oxynitride film SiO2(x)N(y) 15-3 on the glass substrate side (field insulator 14 side) regardless of the amount of additional oxygen in dry etching gas. Likewise a taper is formed in the upper-layer silicon nitride film SiN 15-2 having a higher etching rate. Thus, a taper 19 as shown in
After the etching, the photo-resist 26 is removed, and the upper electrode 13 is formed. In this event, the upper electrode 13 is formed to extend from the cathode along the taper 19 of the interlayer insulator 15 and cover the upper bus electrode. Since there is no step in the interlayer insulator 15, there is no fear that the upper electrode 13 is disconnected in this portion.
The interlayer insulator is formed so that a silicon compound having a high content of nitrogen high in Na blocking capacity is laminated on a silicon compound having a high content of oxygen low in permittivity. Accordingly, the crossing portion between the data line (base electrode 11) and the upper electrode 13 (scan line, upper bus electrode) can be made low in capacitance, while contamination of the cathode with sodium Na diffused from the glass substrate can be blocked. It is therefore possible to obtain an image display device high in reliability, high in definition and long in life.
In Embodiment 3, as the interlayer insulator 15, only a silicon oxynitride film SiO2 (x)N(y) 15-4 having a composition gradient similar to that of the lower layer in Embodiment 2 is formed on the field insulator 14. Here, (x) designates the content of silicon oxide SiO2, and (y) designates the content of silicon nitride SiN.
In the silicon oxynitride film SiO2(x)N(y) 15-4, the value (x) is remarkably larger than the value (y) on the field insulator 14 side, that is, the silicon oxynitride film SiO2(x)N(y) 15-4 is rich in silicon oxide SiO2 on the field insulator 14 side, while the value (y) is remarkably larger on the upper bus electrode formation side (top surface side), that is, the silicon oxynitride film SiO2(x)N(y) 15-4 is rich in silicon nitride SiN on the top surface side. A photo-resist 26 is applied onto the silicon oxynitride film SiO2(x)N(y) so as to expose a region to be formed as a taper. In this event, the photo-resist 26 may be applied to a portion which is ahead of the region to be formed as a taper. In this case, the etching rate varies continuously in accordance with the concentrations of silicon oxide SiO2 and silicon nitride SiN so that a taper angle 19 as shown in
That is, for the same reason as in Embodiment 2, the dry etching rate of the silicon oxynitride film SiO2(x)N(y) 15-4 on the field insulator 14 side with a rich oxygen content is low while the dry etching rate of the silicon oxynitride film SiO2(x)N(y) 15-4 on the top surface side is high. A taper is formed in the silicon oxynitride film SiO2(x)N(y) 15-4 on the glass substrate side (field insulator 14 side) regardless of the amount of additional oxygen in dry etching gas. Thus, a taper 19 as shown in
After the etching, the photo-resist 26 is removed, and the upper electrode 13 is formed. In this event, the upper electrode 13 is formed to extend from the cathode along the taper 19 of the interlayer insulator 15 and cover the upper bus electrode. Since there is no step in the interlayer insulator 15, there is no fear that the upper electrode 13 is disconnected in this portion.
The interlayer insulator is formed so that a silicon compound having a high content of nitrogen high in Na blocking capacity is laminated on a silicon compound having a high content of oxygen low in permittivity. Accordingly, the crossing portion between the data line (base electrode 11) and the upper electrode 13 (scan line, upper bus electrode) can be made low in capacitance, while contamination of the cathode with sodium Na diffused from the glass substrate can be blocked. It is therefore possible to obtain an image display device high in reliability, high in definition and long in life.
The silicon oxynitride film SiO2(x)N(y) in
| Number | Date | Country | Kind |
|---|---|---|---|
| 2004-288489 | Sep 2004 | JP | national |
