As shown in
The first and the second regions 100, 200 refer to spatial regions divided by the first substrate 10 within the vacuum structure 2. Through-holes 16 may be formed at the first substrate 10 to allow communication between the first and the second regions 100, 200.
An electron emission unit 18 is provided on a surface of the first substrate 10 facing the second substrate 12 to emit electrons toward the second substrate 12. A light emission unit 20 may be provided on a surface of the second substrate 12 facing the first substrate 10 to emit visible rays due to the electrons. The first substrate 10 and the electron emission unit 18 may form a cathode substrate, and the second substrate 12 and the light emission unit 20 may form an anode substrate.
A sealing member 22 may be placed at the periphery of the first and the second substrates 10, 12 to seal them to each other. The sealing member 22 may be formed with a glass frit, or with a pair of frit layers 26 disposed between the first substrate 10 and a support frame 24, and between the second substrate 12 and the support frame 24.
Accordingly, the first region 100 is surrounded by the first substrate 10, the second substrate 12, and the sealing member 22. The distance between the first and the second substrates 10, 12 is dependent on the height of the sealing member 22. The support frame 24 may be formed from the same material as the first and the second substrates 10, 12, or with a material having a similar thermal expansion coefficient as the first and the second substrates 10, 12.
In one exemplary embodiment, the second substrate 12 may be formed with a thickness adapted to endure vacuum pressure, for example, 10 mm or more. On the other hand, if vacuum pressure is not applied to the first substrate 10, the first substrate 10 may be formed with a thickness less than the second substrate 12, for example, with 5 mm or less.
The first substrate 10 may include various electrodes for controlling the activation of electron emission, the amount of electron emission, and the trajectories of electron beams. The first substrate 10 may endure several high temperature heat treatment processes during the formation of the electron emission regions, the electrodes and the inter-electrodes insulating layers. The first substrate 10 with a thickness of 5 mm or less suffers lower thermal stress even under extreme temperature variation which may prevent fracturing, while enhancing the layer formation characteristic of the electron emission unit 18.
The reinforcing panel 14 outlining the vacuum structure 2 may have a centrally disposed recessed portion 28 facing the first substrate 10 to provide a second region 200 enveloped by the first substrate 10 and the reinforcing panel 14. The reinforcing panel 14 may have a sidewall 34 at its periphery facing the first substrate 10 such that the recessed portion 28 is located within the sidewall 34. A frit layer 36 may be wholly or partially formed on a surface of the sidewall 34 facing the first substrate 10 to seal the first substrate 10 and the reinforcing panel 14 to each other.
If it will be subject to vacuum pressure, the reinforcing panel 14 may have a thickness greater than the first substrate 10. For example, the reinforcing panel 14 may have the same thickness as the second substrate 12. The reinforcing panel 14 may be provided with an exhaust vent 30 and an exhaust tube 32 for ventilating the interior of the structure, and a getter (not shown) for adsorbing remnant gas to heighten the vacuum degree.
As described above, the reinforcing panel 14 has a substantially flat shape along its periphery, and a centrally disposed recessed portion 28 facing the first substrate 10 to provide a second region 200 communicable with the first region 100. Accordingly, the distance between the first and the second substrates 10, 12 is constant absent the use of spacers in the first region 100, thereby obtaining a stable structure. Furthermore, the initial vacuum degree of the vacuum structure 2 is heightened due to the enlarged internal volume, compensating for the deterioration in vacuum degree due to outgassing. Furthermore, the non-active area of the vacuum structure 2 has a minimal size and weight. In view of the distribution of stress applied to the first substrate 10, the second substrate 12 and the reinforcing panel 14, the sealing member 22 and the sidewall 34 are spatially varied in width.
As shown in
As shown in
After the vacuum structure is constructed, stress may be concentrated at the center of the sides of the first and the second substrates 10, 12, while stress may be relatively weak at the four diagonal corners thereof. Accordingly, the sealing member 22 disposed between the first and the second substrates 10, 12 may be widest at the center of the sides of the two substrates, and may be narrowest adjacent the diagonal corners of the two substrates.
More specifically, the sealing member 22 may be widest at the center of the sides of the first and the second substrates 10, 12, and may narrowingly taper toward the diagonal corners of the two substrates. The tapering of the sealing member 22 inhibits the extreme intensity variation along the periphery of the first and the second substrates 10, 12 and more uniformly distributes the stress on the two substrates. The sealing member 22 has an altered inner wall configuration while maintaining a rectangular outer wall configuration to satisfy the above-described width condition.
In order to more effectively use the non-active area, the through-holes 16 of the first substrate 10 may be located external to the diagonal corners of the active area. Accordingly, the sealing member 22 has a reduced outline size, but exerts excellent adhesion. Consequently, the size of the non-active area may be reduced, thereby decreasing the weight of the vacuum structure 2 significantly.
With further reference to
In another exemplary embodiment as shown in
Similar to the sealing member 22, the sidewall 42 of the second substrate 12′ has a maximum width adjacent the center of the sides of the first and the second substrates 10, 12′, and a minimum width at the diagonal corners of the first and the second substrates 10, 12′.
The above-described vacuum structure 2, 2′ is well-adapted for use in manufacturing image display devices using cold cathodes as the electron emission sources, such as an FEA type electron emission display or an SCE type electron emission display. The image display device applied to the FEA type will be briefly explained with reference to
As shown in
The first insulating layer 52 and the gate electrodes 50 have openings 521, 501 adapted to expose respective electron emission regions 54. The second insulating layer 58 and the focusing electrode 56 may have openings 581, 561 formed at respective crossing regions of each cathode and the gate electrode 48, 50.
The electron emission regions 54 may be formed with a material emitting electrons when an electric field is applied thereto under a vacuum atmosphere, such as a carbonaceous material and a nanometer-sized material. For instance, the electron emission regions 54 may be formed with carbon nanotube, graphite, graphite nanofiber, diamond, diamond-like carbon, C60, silicon nanowire, or a combination thereof. Alternatively, the electron emission regions may be formed with a sharp-pointed tip structure primarily based on molybdenum Mo or silicon Si.
The light emission unit 60 provided at the second substrate 12 may include red, green and blue phosphor layers 62R, 62G and 62B, black layers 64 disposed between the respective phosphor layers 62 to enhance the screen contrast, and an anode electrode 66 formed on the phosphor layers 62 and the black layers 64. The anode electrode 66 may be formed with a metallic material such as aluminum. The anode electrode 66 reflects the visible rays radiated from the phosphor layers 62 to the first substrate 10 toward the second substrate 12 to thereby enhance the screen luminance.
The above-structured image display device may be driven by supplying outside voltage to the cathode electrodes 48, the gate electrodes 50, the focusing electrode 56 and the anode electrode 66. For instance, one of the cathode electrodes 48 and one of the gate electrodes 50 may receive a scan driving voltage, and the other electrode may receive a data driving voltage. The focusing electrode 56 receives a voltage required for focusing the electron beams, for instance, a 0V ground voltage or a negative direct current voltage of several to several tens volts. The anode electrode 66 receives a voltage required for accelerating the electron beams, for instance, a positive direct current voltage of several hundreds to several thousands volts.
Electric fields are then formed around the electron emission regions 54 at the pixels where the voltage difference between the cathode and the gate electrodes 48, 50 exceeds the threshold value, and electrons are emitted from those electron emission regions 54. The emitted electrons pass through the openings 561 of the focusing electrode 56, and are focused at the center of the bundles of electron beams. The electrons are attracted by the high voltage applied to the anode electrode 66, thereby colliding against the phosphor layers 62 at the relevant pixels and exciting them to emit light.
As described above, with respect to exemplary embodiments of the image display device of the present invention, the non-active area is efficiently used due to the shape of the sealing member sidewall and the reinforcing panel. Consequently, the weight of the display device product can be significantly reduced.
The structure above is described according to an exemplary embodiment of the present invention is applied to the FEA type electron emission display, but not limited thereto. That is, such a structure may be applied to other image display devices in addition to the FEA type electron emission display.
Although exemplary embodiments of the present invention have been described in detail hereinabove, it will be understood by one of ordinary skill in the art that many variations and/or modifications of the basic inventive concept taught herein will still fall within the spirit and scope of the present invention, as defined in the appended claims.
Number | Date | Country | Kind |
---|---|---|---|
10-2006-0038579 | Apr 2006 | KR | national |