The present invention relates, in general, to optical devices having image intensifier tubes. More specifically, the present invention relates to reducing the amount of low energy electrons in a dielectric film employed by such optical devices.
An image intensifier (I2) tube amplifies light to provide a visible image of a scene. Typically, the I2 tube includes a photocathode (PC) behind the light-receiving face of the tube. The PC is responsive to photons of visible and infrared light to liberate photoelectrons. Because an image of a scene is focused on the PC, photoelectrons are liberated from the PC in a pattern which replicates the scene. These photoelectrons are moved by a prevailing electrostatic field to a microchannel plate having a multitude of microchannels. These microchannels have an interior surface at least in part defined by a material liberating secondary-emission electrons, when photoelectrons collide with the interior surfaces of the microchannels. In other words, each time an electron (whether a photoelectron or a secondary-emission electron previously emitted by the microchannel plate) collides with this material at the interior surfaces of the microchannels, more than one electron (i.e., secondary-emission electrons) leave the site of the collision.
As a consequence, the photoelectrons entering the microchannels cause a geometric cascade of secondary-emission electrons moving along the microchannels, from one face of the microchannel plate to the other face, so that a spatial output pattern of electrons issues from the microchannel plate. This pattern of electrons is moved from the microchannel plate to a phosphorescent screen electrode by another electrostatic field. When the electron shower from the microchannel plate impacts on and is absorbed by the phosphorescent screen electrode, visible-light phosphorescence occurs in a pattern which replicates the image. This visible-light image is passed out of the tube for viewing via a transparent image-output window.
It is estimated that about 20% of the electrons from the photocathode that impinge on the input surface of the MCP are scattered back toward the photocathode. The backscattered electrons are repelled by the electric field between the photocathode and the input surface of the MCP and forced to strike the input surface of the MCP a second time. This causes what is known as a halo effect, resulting in the electrons spreading out from the size of a small spot at the photocathode to the size of a much larger spot at the input surface of the MCP. A similar backscattered electron halo-generating effect also takes place at the phosphorescent screen.
In order to suppress this effect at the phosphorescent screen, a collimator is included in some image intensifier tubes. Such a collimator is disclosed in U.S. Pat. No. 5,495,141 and incorporated herein by reference. As described therein, a collimator is inserted between the output surface of the MCP and the phosphor screen. Some of the electrons entering the collimator strike the collimator walls and are prevented from reaching the phosphor screen. This phenomenon, however, reduces the number of electrons that get through the collimator to about 25% to 50% of the electrons leaving at the output of the MCP. This, in turn, results in a brightness loss for the image intensifier tube.
As will be explained, there are other problems resulting from attempts to reduce halo effects in image intensifier tubes. The present invention advantageously overcomes some of these problems and produces an image intensifier tube with reduced secondary emissions, reduced halo in the output image and reduced charge build-up that causes image burn-in and may damage the image intensifier tube.
To meet this and other needs, and in view of its purposes, the present invention provides an image intensifier tube having a collimator including multiple channels for receiving electrons from a photocathode layer, and a microchannel plate (MCP) including multiple channels for receiving electrons from the collimator. An ion barrier film (IBF) is disposed between the collimator and the MCP, and the IBF includes a small amount of conductive material.
The IBF includes alumina doped with chromium oxide, alumina doped with manganese oxide, or alumina doped with a conductive material. The amount of conductive material may be 1% to 5%.
The IBF may be disposed on top of the MCP, and may include approximately 98% of non-conductive material and approximately 2% of conductive material. Alternatively, a layer of conductive material may be deposited on top of the IBF.
Another embodiment of the present invention includes an imager comprising a microchannel plate (MCP) including multiple channels for receiving electrons from a photocathode layer, and an ion barrier film (IBF) disposed on top of the MCP. The IBF includes a small amount of conductive material. The IBF may include alumina doped with chromium oxide. The IBF may include alumina doped with manganese oxide. The IBF may include, in general, a small amount of conductive material, such as 1% to 5% of conductive material in a layer of alumina. The IBF may also include non-conductive material, and a layer of conductive material deposited on top of the IBF. The layer of conductive material may be 5 to 10 Angstroms in thickness.
Yet another embodiment of the present invention is a method of making a microchannel plate (MCP) for an image intensifier tube. The method comprises the steps of: (a) forming an ion barrier film (IBF) on top of an input side of the MCP; and (b) doping the IBF with 2% to 5% of conductive material. The step of forming may include forming the IBF with alumina, and the step of doping may include doping the IBF with chromium oxide. The step of forming may also include forming the IBF with alumina, and the step of doping may also include doping the IBF with manganese oxide.
In general, the step of forming may include forming the IBF with non-conductive material, and the step of doping may include doping the IBF with conductive material. As another process, the step of forming may include forming the IBF with non-conductive material, and the step of doping may include depositing a layer of conductive material 5 to 10 Angstroms in thickness on top of the IBF.
It is understood that the foregoing general description and the following detailed description are exemplary, but are not restrictive, of the invention.
The invention may be best understood from the following detailed description when read in connection with the accompanying drawing. Included in the drawing are the following figures:
The present invention provides an image intensifier tube including a photocathode at an input side, and a phosphor screen at an output side; in addition, a collimator and an MCP are inserted between the photocathode and the phosphor screen. The collimator is positioned following the photocathode; and the MCP is positioned following the photocathode and in front of the phosphor screen. Moreover, the input side of the MCP includes an ion barrier film (IBF) which has a small amount of conductive material such as chromium oxide.
Referring first to
The electrons 16 propagate through the microchannels of collimator 12 and continue through gap 18 toward MCP 13. The MCP also includes microchannels which amplify the incoming electrons to provide a multiplied output of electrons toward phosphor screen 14. An electric field between the input side of collimator 12 and the output side of MCP 13 accelerates the electrons 16 as they are multiplied and, thereby, amplified. Although there is a potential difference between the input side of the collimator and the output side of the MCP, there is no potential difference between the output side of the collimator 12 and the input side of MCP 13. Thus, the portion of electrons 16 which do not enter the microchannels on MCP 13 but strike the surface, are backscattered from the input side of the MCP as electrons 16b are backscattered in a straight trajectory and captured by the collimator 12. The straight trajectory of electrons 16b is due to the electric field-free environment existing in gap 18.
Completing the description of
Turning next to
The upper and lower portions 23 and 24, respectively, of collimator 12 are deposited with a conductive material. Similarly, the upper and lower portions 25 and 26, respectively, of MCP 13 are deposited with a conductive material. In this manner, electrodes are established to permit an electric field gradient throughout the lengths of collimator 12 and MCP 13. While an electric field gradient exists between the input side of collimator 12 and the output side of MCP 13, there is no electric field gradient in gap 18, because the collimator output side and the MCP input side are connected together. A portion of the total voltage gradient is dropped across the collimator, based on a ratio of the collimator's resistance to the MCP's resistance.
Due to the electric field gradient between the input and output sides of the collimator, the multiple channels 27 are sources for electron gain. Thus, incoming electrons 22 are multiplied as they are reflected off the cladding walls of multiple channels 27. This multiplication phenomenon, or gain phenomenon is shown in
In a similar manner, due to the electric field gradient between the input and output sides of the MCP, the multiple channels 28 are sources for electron gain. Thus, incoming electrons 22b are multiplied as they are reflected off the cladding walls of multiple channels 28 providing output electrons 22c. Similarly, incoming electrons 21 reflect off the cladding wall of channel 28 as electrons 21a, which in turn reflect off the cladding wall as outgoing electrons 21b. It will be appreciated that multiplication or gain is achieved in all channels 28, unlike gain in only some channels 27 due to the electrons entering channels 28 at a greater angle than the electrons entering channels 27. As shown in
Referring next to
Higher energy electrons created further up the microchannels in collimator 12 spread less and have greater energy, and therefore are more likely to penetrate IBF 32. Impact with IBF 32 by the large spread of low energy electrons created near the end of the microchannels in collimator 12 have a much greater probability of becoming trapped in IBF 32. The low energy electrons that fail to penetrate IBF 32 can lead to a localized charge build-up in the film. The charge build-up creates noticeable, short term image retention as the electrons slowly disperse through the film.
The present invention fixes the problem of charge retention in the IBF by doping the IBF with a small amount of conductive material. For example, the conductive material may be approximately 2% chromium oxide (Cr2O3). The small amount of conductive material in the IBF causes the low energy electrons to readily disperse at a rapid pace, without adversely affecting the properties of the IBF. The effect of localized charge retention in the IBF, thus, is reduced. This is shown in
It will be understood that other conductive material than Cr2O3 may be used in doping the IBF structure. For example, a small amount of Mn3O4 or similar metallic oxide may be used. The small amount of conductive material in the non-conductive alumina structure may vary, for instance, between 1% and 5%.
An alternative method for forming conductive contents in the IBF structure, without impacting the usefulness of the IBF structure, a thin layer of conductor material, such as aluminum, may be deposited on top of the alumina IBF. The thickness of the layer of conductive material may be approximately 5 to 10 Angstroms. The deposition method may include atomic layer deposition (ALD), electro-plating, chemical vapor deposition (CVD), physical vapor deposition (PVD) and the like, and any combinations thereof.
It will be understood that the aforementioned discussion of doped IBF also applies to a standard image intensifier tube which includes an MCP and photocathode, without a collimator sandwiched between them. The doped IBF may be applied to the image intensifier tube in instances where a low clamp voltage is desirable.
Although the invention is illustrated and described herein with reference to specific embodiments, the invention is not intended to be limited to the details shown. Rather, various modifications may be made in the details within the scope and range of equivalents of the claims and without departing from the invention.
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