The present invention relates to a monolithic integrated circuit chip. More specifically, the present invention relates to a monolithic complementary metal oxide semiconductor (CMOS) circuit chip which incorporates a sensor array, digitizer and decoder. Further the present invention relates to a CMOS circuit chip which incorporates signal processing, image capture and radio frequency communication on a single chip.
Since the advent of the integrated circuit chip it has been desired to integrate as many components as possible onto the same circuit chip. The integration of components on the same circuit chip allows the sharing of components formed on the circuit chip, thereby reducing costs. Further, the integration of various components on the same circuit chip increases speed and efficiency of the exchange of information between the various components because the parasitic resistance and capacitance between components is significantly smaller when the components are on the same chip. For example, if an analog-to-digital converter and a microprocessor are formed on separate circuit chips, the amount of information exchanged between the analog-to-digital converter and the microprocessor is limited by the speed of a bus which connects the analog-to-digital converter to the microprocessor. Accordingly, integrating an analog-to-digital converter on the same circuit chip as a microprocessor increases the amount of information which can be exchanged between the two components.
It will be recognized that CMOS technology is currently the fabrication process used to make most integrated circuits today. One type of integrated circuit chip which employs CMOS technology to increase the number of components formed on the same circuit chip is a CMOS imager. Conventionally, most imagers were constructed as charged coupled device (CCD) imagers. The manufacturing of conventional CCD imagers is a specialized process which does not integrate well to the addition of peripheral circuitry, e.g., timing generators, decoders, multiplexers and analog-to-digital converters, on the same chip as the CCD device. Further, depending upon the type of device being used, a CCD imager may require multiple bias voltages and high-power phase clocks to operate. Accordingly, to obtain an image from a CCD imager requires additional hardware which increases a unit's power consumption, size and cost.
There are currently two different types of CMOS imagers known today, active pixel sensor (APS) and active column sensor (ACS) imagers. APS CMOS imagers are constructed by placing an amplifier inside each pixel. The placement of the amplifier inside each pixel reduces the light gathering portion of the pixel, i.e., the fill factor of each pixel, and reduces the dynamic range of the pixel. In addition, variations in the manufacturing process of APS CMOS imagers cause a fluctuation in the gain and offset of each of the amplifiers. These fluctuations may result in each pixel responding differently to the same amount of input light. The different responses of each pixel can create noise.
ACS CMOS imagers employ a true unity gain amplifier which is shared by each pixel in each column of pixels. As compared to APS CMOS imagers, ACS CMOS imagers use only an input transistor inside each pixel. APS CMOS imagers' use of only an input transistor inside each pixel, as compared to the use of an amplifier inside each pixel as in APS CMOS imagers, increases the fill factor and dynamic range of the imager. The additional space provided to the amplifiers in APS CMOS imagers, by not being required to be inside each pixel, allows the implementation of high-quality amplifiers. Further, these high-quality amplifiers, being true unity gain with feedback, virtually eliminate the pixel-to-pixel gain variations of APS CMOS imagers.
Another area where CMOS technology is used to increase the number of components formed on the same circuit chip is in the area of memory systems. The recent increased demand for portable electronic devices has increased demand for smaller more versatile memory systems. This is due in part to the limited power supplies employed by these portable electronic devices. For example, portable electronic devices typically rely upon batteries to power the devices. In these devices it is desirable to maintain information in memory systems when the portable electronic device is powered off. Memory systems which can store information without power are known as non-volatile memory systems. Two known types of non-volatile memory systems are E2PROM and flash memory.
Another type of memory system which can be implemented using CMOS techniques is ferroelectric random access memory (FRAM). FRAM provides write times which exceed those of conventional memory systems. Further, FRAM only requires 1 mA of operating current which is less power than is required for other types of conventional memory systems. The reduced operating power is advantageous in electronic portable devices due to the limited power supplies of these devices.
To form FRAM in CMOS, ferroelectric material is deposited after the CMOS device has been formed. The deposition of the ferroelectric material does not require a high-temperature treatment. Other formation techniques which require deposition during the formation of the CMOS device and high temperature treatment can alter the source and drain diffusion depths of the CMOS. FRAM technology is discussed generally in Auciello et al., “The Physics of Ferroelectric Memories”, Physics Today, July 1998.
Accordingly, it is an object of the present invention to reduce the costs and packing size of imaging devices.
It is also an object of the present invention to provide a monolithic circuit chip which integrates various components which previously have been formed on separate circuit chips.
It is a further object of the present invention to provide a monolithic circuit chip which provides multiple sensing and signal processing functions used in the reading of optical codes.
These and other objects and features of the invention will be apparent from this written description and the drawings.
The present invention relates to methods and apparatus useful in optical code readers and camera systems. Techniques are disclosed which are applicable to the design of solid state die packages for code readers and cameras of various types.
In a preferred embodiment of the present invention a photo sensor array for an optical code reader or camera system is formed on the same monolithic circuit chip as a digitizer and a decoder. The apparatus can be either a linear array for detecting one-dimensional bar code symbols or an area array for imaging two dimensional optical code symbols or objects or scenes.
In another preferred embodiment of the present invention an imager for an optical code reader or camera system is formed on the same monolithic circuit chip as a processor, memory and radio frequency transceiver. In accordance with this embodiment of the present invention, the processor, radio frequency transceiver and imager are formed on the monolithic circuit chip in accordance with complementary metal oxide semiconductor (CMOS) techniques. Further, the memory can be formed from ferroelectric random access memory (FRAM), flash or E2PROM. The radio frequency transceiver and imager can share components on the monolithic circuit chip for processing the signals received by the transceiver and imager.
The foregoing is intended as a convenient summary of the present disclosure. However, the aspects of the invention sought to be protected are set forth in the claims.
The objects and advantages of the invention will be understood by reading the following detailed description in conjunction with the drawings, in which:
The various features of the invention will now be described with reference to the figures, in which like parts are identified with the same reference characters.
In the following description, for purposes of explanation and not limitation, specific details are set forth in order to provide a thorough understanding of the present invention. However, it will be apparent to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known methods, devices, and circuits are omitted so as not to obscure the description of the present invention.
After digitizing the received image, the digitizer forwards the digital image to decoder 130 for further processing. Decoder 130 can be implemented as a barcode scanner decoder using conventional decoding algorithms. Upon receiving the digitized image, the decoder 130 stores the digitized information in RAM 133 during the decoding process. The microprocessor core 131 retrieves the stored information from RAM 133 and decodes the information in accordance with instructions stored in ROM 134. The accessing of RAM 133 and ROM 134 by the microprocessor core is controlled by DMA controller 135. Once the information is decoded by microprocessor core 131, the decoded information is stored in RAM 133. The decoded image can be output to a computer, or other processing device, via I/O interface 132.
The combination of a sensor array, digitizer and decoder on the same monolithic circuit chip reduces the complexity, size and cost compared to systems where the sensor array, digitizer and/or decoder are implemented on separate circuit chips. This reduced complexity, size and cost is particularly advantageous in barcode scanner and low-cost video or photographic applications. In accordance with exemplary embodiments of the present invention, the monolithic circuit chip 105 is constructed using CMOS technology. Although
Another embodiment of the present invention relates to a monolithic CMOS circuit chip which incorporates signal processing, image capture and radio frequency communication on a single chip.
In the arrangement illustrated in
Imaging circuit 220 is a CCD or CMOS imager. Accordingly, imaging circuit 220 receives an image and uses analog-to-digital converter 225 to convert the received image into digital form. The digital image is sent over bus 250 to microprocessor 230. Microprocessor 230 receives, via digital multiplexer 235, digital signals from radio frequency circuit 210 or from imaging circuit 220.
Since radio frequency circuit 210 and imaging circuit 220 are located on separate circuit chips from that of microprocessor 230, external leads must be used to connect radio frequency circuit 210 and imaging circuit 220 to microprocessor 230. The use of external leads increases the chance of breakage of the connection between these components. Further, the external leads reduce the throughput of data between the components. In addition, since radio frequency circuit 210 and imaging circuit 220 are located on separate chips, each circuit requires its own digital-to-analog converter. This duplication in parts increases the cost of the resultant device and increases the power consumption of the resultant device. The use of separate circuits chips also increases the manufacturing and packaging costs of the resultant device.
In accordance with the present invention, RF to baseband radio circuit 310 receives radio signals, removes the radio frequency carrier and converts the radio frequency signal to a baseband signal. The signal is passed from RF to baseband radio circuit 310 via the analog bus to analog multiplexer (AMUX) 330. The multiplexed information is passed to analog to digital (A/D) converter bank 340. The digital information can then be placed on bus 375 so that the first interface logic 320 or processor 370 can perform further processing of the information.
The first interface logic 320 can receive the digital information from bus 375 and depacketize the digital baseband information. The depacketized digital baseband signal can then be communicated to processor 370 over bus 375. Alternatively, processor 370 can receive the packetized digital baseband information from bus 375 and can depacketize the signal. The first interface logic 320 can set registers and flags in the RF to baseband radio circuit 310 via the I/O bus connecting the two circuits. RF to baseband radio circuit 310 is controlled and receives power from the first interface logic 320 via the Cntrl & PWR line.
If digital imager circuit 350 outputs analog information, e.g., if digital imager circuit 350 is a charged coupled device (CCD), digital imager circuit 350 provides an analog image signal to the analog multiplexer 330. The multiplexed information is passed to A/D converter bank 340. The digital information can then be placed on bus 375 so that the second interface logic 360 or processor 370 can perform further processing of the information.
If digital imager 350 outputs digital information, digital imager 350 provides second interface logic circuit 360 with the digital image, via the I/O bus connecting the two circuits. The second interface logic circuit 360 can processes samples of the digital image and provide the samples to processor 370. Processor 370 can process the image data if necessary. For example, processor 370 can perform compression, decompression, filtering and other functions inherent in image processing. Digital imager circuit 350 is controlled and receives power from the second interface logic 360 via the Cntrl & PWR line.
Processor 370 operates in connection with FRAM 380. FRAM 380 includes program memory 382 and data memory 384. Program memory 382 is a read only memory and stores the instructions for operation of the processor 370, RF to baseband circuit 310 and digital imager 350. Data memory 384 is used to store information by the processor 370, including received radio information and digital image information. Processor 370 controls the path selecting for the analog multiplexer via control line 345. Testing of the processor 370 can be performed by sending test signals over the Test/Dev bus. Additionally, communication with external circuits and other devices is achieved via the Comm bus. Power conditioning circuit 390 converts the circuit chip's input power into the amount of power required for the various components formed on the circuit chip.
The first and second interface logic 320 and 360 are illustrated as separate components for ease of explanation. However, components of these logic circuits can be shared. For example, in a preferred embodiment the RF to baseband radio circuit 310 and the digital imager circuit 350 may share the same components for signal compression and decompression which is used in image processing and RF decoding. Further, fast Fourier transform (FFT) and inverse fast Fourier transform (IFFT) algorithms which are used for feature extraction from images and RF signals can be performed using shared components. In addition, analog-to-digital converters, filters, correlators, accumulators and shift registers which are used to process the image and RF signals can be provided using circuit shared between the RF to baseband radio circuit 310 and digital imager circuit 350.
Because of the low cost of the integrated circuit chip described above in connection with
Another exemplary application of the integrated circuit chip described above in connection with
As a complement to the above-described parking garage implementation of the present invention, a billing system for use of parking spaces can be provided. For example, the integrated circuit chip illustrated in
The invention has been described herein with reference to particular embodiments. However, it will be readily apparent to those skilled in the art that it may be possible to embody the invention in specific forms other than those described above. This may be done without departing from the spirit of the invention. Embodiments described above are merely illustrative and should not be considered restrictive in any way. The scope of the invention is given by the appended claims, rather than the preceding description, and all variations and equivalents which fall within the range of the claims are intended to be embraced therein.
Number | Date | Country | |
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Parent | 09843946 | Apr 2001 | US |
Child | 11879051 | Jul 2007 | US |