The subject matter herein generally relates to an imaging system and an optical device having the imaging system.
A high-pressure mercury lamp is a traditional lighting source used in operating a charge coupled device (CCD) camera (also known as CCD image sensor). However, there are obvious fluctuations in the reflectivity of the light in relation to photoresists with different thicknesses. Therefore, when a photoresist layer with uneven thickness covers a surface of an object, the contrast of the image captured is low after the CCD camera actually focuses, which affects the imaging.
Implementations of the present technology will now be described, by way of embodiments only, with reference to the attached figures.
It will be appreciated that for simplicity and clarity of illustration, where appropriate, reference numerals have been repeated among the different figures to indicate corresponding or analogous elements. In addition, numerous specific details are set forth in order to provide a thorough understanding of the embodiments described herein. However, it will be understood by those of ordinary skill in the art that the embodiments described herein may be practiced without these specific details. In other instances, methods, procedures, and components have not been described in detail so as not to obscure the related relevant feature being described. Also, the description is not to be considered as limiting the scope of the embodiments described herein. The drawings are not necessarily to scale and the proportions of certain parts may be exaggerated to better illustrate details and features of the present disclosure.
The term “coupled” is defined as coupled, whether directly or indirectly through intervening components, and is not necessarily limited to physical connections. The connection can be such that the objects are permanently coupled or releasably coupled. The term “comprising” when utilized, means “including, but not necessarily limited to”; it specifically indicates open-ended inclusion or membership in the so-described combination, group, series, and the like.
The present disclosure provides an imaging system and an optical device. The imaging system can be applied in semiconductor manufacturing, especially in production processes using photoresist. The optical device is equipment such as a lithography machine and an automatic optical detector. The performance of the imaging system and the optical device is good even with the uneven photoresist film thickness and the product quality is improved.
In one embodiment, the lens group 2 includes a first collimating lens 211, a second collimating lens 212, a third collimating lens 213, a fourth collimating lens 214, a diffuser 22, a dichroic lens 23, a first prism 24, a second prism 25, an objective lens aperture 26, and an objective lens 27.
The first collimating lens 211 is on an optical path of the first light source 11 and configured to collimate light from the first light source 11. The second collimating lens 212 is on an optical path of the second light source 12 and configured to collimate light from the second light source 12. The third collimating lens 213 is on an optical path of the third light source 13 and configured to collimate light from the third light source 13.
The diffuser 22 is on the optical path of the first light source 11 and on a side of the first collimating lens 211 away from the first light source 11. The diffuser 22 expands the light from the first light source 11. The dichroic mirror 23 is on the optical path of both the first light source 11 and the second light source 12, on a side of the diffuser 22 away from the first collimating lens 211 and on a side of the second collimating lens 212 away from the second light source 12. The dichroic mirror 23 is configured for reflecting the light from the first light source 11 and transmitting the light from the second light source 12.
The first prism 24 is on the optical path of the first light source 11, the second light source 12 and the third light source 13, and on a side of the third collimating lens 213 away from the third light source 13 and a side of the dichroic mirror 23 away from the second collimating lens 212. The first prism 24 is configured to integrate light from the first light source 11, the second light source 12, and the third light source 13 into a single beam of light. The fourth collimating lens 214 is between the first prism 24 and the second prism 25 and configured to collimate the light from the first prism 24 to the second prism 25.
The second prism 25 is between the target object 3 and the CCD camera 4, and is configured to divide the incident light into two beams, one beam to the target object 3 and the other beam to the CCD camera 4. Alternatively, the two beams of light are arranged to reach the CCD camera 4 after reflection and/or refraction.
The objective lens aperture 26 and the objective lens 27 are between the second prism 25 and the target object 3, and the objective lens aperture 26 is on a side of the objective lens 27 adjacent to the second prism 25. The objective lens aperture 26 is configured to adjust the luminous flux of the passing light. The objective lens 27 is configured to converge the incident light to the position of the target object 3.
Specifically, the light emitted by the first light source 11 is collimated by the first collimating lens 211 and reaches the diffuser 22. The diffuser 22 expands the light of the first light source 11 and the expanded light reaches the dichroic mirror 23. The dichroic mirror 23 reflects the light from the diffuser 22 to the first prism 24.
The light emitted by the second light source 12 is collimated by the second collimating lens 212 and then reaches the dichroic mirror 23. The dichroic mirror 23 transmits the light from the second collimating lens 212 to the first prism 24.
The light emitted from the third light source 13 is collimated by the third collimating lens 213 and then reaches the first prism 24. After passing through the dichroic mirror 23, the light of the first light source 11 and the light of the second light source 12 are incident on the first prism 24 from same direction, which is different from the direction of the light of the third light source 13 incidents on the first prism 24.
The light of the first light source 11, the second light source 12 and the third light source 13 is combined into a beam of light after passing through the first prism 24, which is defined as a first combined light L1. The first combined light L1 is collimated by the fourth collimating lens 214 and then reaches the second prism 25. The second prism 25 divides the first combined light L1 into two beams, which are defined as a first split beam L2 and a second split beam L3. The first split beam L2 reaches the objective lens 27 after being adjusted by the objective lens aperture 26, and the second split beam L3 is from a direction different from a direction of the first split beam L2 toward the CCD camera 4. The first split beam L2 from the objective lens 27 reaches the target object 3, and the light reflected by the target object 3 is captured by the CCD camera 4 to form an image.
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In one embodiment, the imaging system 100 optionally includes a light intensity monitoring module 14 electrically connected to the third light source 13. The light intensity monitoring module 14 includes a photosensitive detector and a controller, which are configured to monitor the light intensity of the third light source 13 during operations and maintain stability of the light intensity. The photosensitive detector is configured to detect the light intensity of the third light source 13 and send the detection result to the controller. The controller adjusts the light intensity of the third light source 13 by controlling the driving voltage or driving current of the third light source 13, so as to maintain the stability of the light intensity.
In one embodiment, the imaging system 100 optionally includes a temperature monitoring module 15 electrically connected to the third light source 13. The temperature monitoring module 15 includes a thermal detector and a controller, which are configured to monitor the temperature of the third light source 13 during operation and protect the third light source 13 against overvoltage and overcurrent. The thermal detector is configured to detect the temperature of the third light source 13 and send the detection result to the controller. The controller adjusts the light intensity of the third light source 13 by controlling the driving voltage or driving current of the third light source 13, so as to prevent the temperature of the third light source 13 from being too high, so as to protect the third light source 13.
In the above embodiments, a number of light sources is three, it can be less or more in other examples. In addition, the light source includes a white LED and does not include a mercury lamp. In other examples, a number of light sources can be one, two, or more than three. For example, when the number of light sources is one only the white LED light source is included. For example, when the number of light sources is two, the white LED light source and the second light source are included. In other example, when the number of light sources is two the white LED light source and the first light source are included.
Optionally, the optical device 200 also includes a moving driver 7 electrically connected to both the processor 6 and the CCD camera 4. The moving driver 7 can move the target object 3 and change its position as the processor 6 dictates.
The optical device 200 can be applied in semiconductor industries to observe and modify the target object 3, such as an automatic optical detector. The optical device 200 particularly relates to the production process of using photoresist, which can cope with the uneven photoresist film thickness and improve the product quality. In other embodiments, the optical device 200 can also be applied to other detection machines to measure the critical dimensions (CD) after etching, critical dimensions after development, the total pitch (TP), or the test element group (TEG).
Compared with the imaging system 100, the imaging system 100a further includes a reflector 28a, and the imaging system 100b further includes a reflector 28b. Both the third prism 29 and the reflector 28a are between the CCD camera 4 and the second prism 25a, and the reflector 28a is configured to reflect the light from the second prism 25a to the third prism 29. Both the third prism 29 and the reflector 28b are between the CCD camera 4 and the second prism 25b, and the reflector 28b is configured to reflect the light from the second prism 25b to the third prism 29. The third prism 29 is a roof prism, which is configured to reflect the light from the reflector 28a and the reflector 28b to the CCD camera 4.
In one embodiment, the target object 3 includes a mask 31 and a glass substrate 32 for preparing a thin film transistor substrate for a liquid crystal display panel. The mask 31 and the glass substrate 32 are provided with alignment marks, and the alignment mark on the glass substrate 32 is covered by photoresist. The optical device 300 can realize alignment operation between the alignment marks on the mask 31 and the alignment marks on the glass substrate 32. Specifically, the CCD camera 4 takes image of the alignment mark on the mask 31 and the alignment mark on the glass substrate 32, and the processor 6 calculates a deviation in relative positions between the alignment mark on the mask 31 and the alignment mark on the glass substrate 32 from images of the alignment marks on both the mask 31 and the glass substrate 32 obtained by the CCD camera, the moving driver 7 finally changes the relative positions between the mask 31 and the glass substrate 32 according to the deviation calculated by the processor 6 to complete the alignment.
The optical device 300 can be applied in semiconductor industries, such as a lithography machine, for observation and alignment of the mask 31 and the glass substrate 32. By experiment, the optical device 300 used in the lithography machine is found to provide stable recognition accuracy of the alignment mark, the eigenvalue index for monitoring the recognition accuracy of the alignment mark is improved and stable, and the number of error reports due to poor recognition or misalignment of the alignment mark is almost zero.
It is to be understood, even though information and advantages of the present embodiments have been set forth in the foregoing description, together with details of the structures and functions of the present embodiments, the disclosure is illustrative only; changes may be made in detail, especially in matters of shape, size, and arrangement of parts within the principles of the present embodiments to the full extent indicated by the plain meaning of the terms in which the appended claims are expressed.
Number | Date | Country | Kind |
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202210128780.2 | Feb 2022 | CN | national |