This Application claims the benefit of Indian Patent Application No. 202341048797, filed on Jul. 20, 2023, the contents of which are hereby incorporated by reference in their entirety.
Many modern devices include various electrical circuits. One type of circuit is a voltage reference circuit. It is desired to make a voltage reference circuit that is precise and to maintain such precision over time and independent of stress, temperature, or both.
In one example, a circuit comprises a voltage reference circuit comprising an output terminal. The voltage reference circuit is configured to generate an output voltage at the output terminal, and the output voltage comprises a first transfer function of voltage with respect to strain. The circuit also comprises a strain compensation circuit having an input terminal connected to the output terminal of the voltage reference circuit, and having a strain compensation circuit output terminal. The strain compensation circuit is configured to receive the output voltage comprising the first transfer function at the input terminal. The strain compensation circuit comprises a second transfer function of voltage with respect to strain that is substantially opposite that of the first transfer function, thereby outputting a compensated voltage at the strain compensation circuit output terminal that is substantially independent of strain.
In one aspect of the disclosure the strain compensation circuit comprises a strain dependent circuit element that exhibits an impedance that is a function of strain. Further, in one aspect of the disclosure the strain dependent circuit element comprises a piezoelectric resistor.
The circuit, in another aspect of the disclosure, further comprises a variable current source circuit connected to the strain compensation circuit output terminal. The variable current source circuit is configured to source or sink a strain compensation current to or from, respectively, the strain compensation circuit. The strain compensation current results in a strain compensation voltage that the strain compensation circuit adds or subtracts, respectively, to the output voltage at the output terminal of the voltage reference circuit to form the compensated voltage at the strain compensation circuit output terminal.
In another aspect of the disclosure, the circuit also comprises a baseline compensation current generation circuit configured to generate a baseline compensation current. The variable current source circuit is coupled to the baseline compensation current generation circuit, and is further configured to generate the strain compensation current based on the baseline compensation current.
In one aspect of the disclosure the variable current source circuit comprises a plurality of parallel-connected, selectively activated transistor circuits coupled in a current mirror configuration with the baseline compensation circuit generation circuit. The variable current source circuit also comprises a control circuit configured to generate and couple a plurality of control signals to the parallel-connected, selectively activated transistor circuits, respectively, thereby causing one or more of the parallel-connected, selectively activated transistor circuits to conduct to form the strain compensation current.
In one aspect of the disclosure, each parallel-connected, selectively activated transistor circuit comprises a transistor connected in series with a switch element that is configured to receive a respective one of the plurality of control signals at a control terminal thereof. When a state of the respective control signal closes the switch element, the respective parallel-connected, selectively activated transistor circuit is activated and conducts a current therethrough having a magnitude corresponding to a sizing of the respective transistor.
In one aspect of the disclosure the circuit further comprises a temperature compensation circuit having an input terminal connected to the strain compensation circuit output terminal. The temperature compensation circuit is configured to sense a temperature at the circuit and generate a temperature compensation voltage based on the sensed temperature. The temperature compensation circuit is further configured to combine the temperature compensation voltage with the compensated voltage at the output terminal of the strain compensation circuit to form a combined strain and temperature compensated voltage at an output terminal of the temperature compensation circuit.
In one aspect of the disclosure a circuit is disclosure that comprises a current source circuit configured to generate a source current at a current source output terminal. The source current has a first, bias current component, and a second, compensation current component. The circuit also comprises a voltage reference circuit configured to generate a reference voltage at a voltage reference output terminal. The voltage reference output terminal is coupled to the current source output terminal, and the voltage reference circuit is configured to sink the first, bias current component of the source circuit. The circuit also comprises a strain compensation circuit having an input terminal connected to the output terminal of the voltage reference circuit, and having a strain compensation circuit output terminal. The strain compensation circuit is configured to source or sink the second, compensation current component, generate a strain compensation voltage based on the second, compensation current component, and combine the reference voltage and the strain compensation voltage to form a compensated reference voltage at an output terminal of the strain compensation circuit.
In one aspect of the disclosure the strain compensation circuit comprises a strain dependent circuit element that exhibits an impedance that is a function of strain. In one aspect, the strain dependent circuit element comprises a piezoelectric resistor.
In another aspect of the disclosure, the circuit further comprises a variable current source circuit connected to the strain compensation circuit output terminal. The variable current source circuit is configured to source or sink the second, compensation current component to or from, respectively, the strain compensation circuit. The second, compensation current component results in a strain compensation voltage that the strain compensation circuit adds or subtracts, respectively, to the reference voltage at the output terminal of the voltage reference circuit to form the compensated reference voltage at the strain compensation circuit output terminal.
In one aspect of the disclosure, the current source circuit is configured to generate a base compensation current, and the variable current source circuit is configured to source or sink the second, compensation current component based on the baseline compensation current. In one aspect the variable current source circuit comprises a plurality of parallel-connected, selectively activated transistor circuits coupled in a current mirror configuration with circuitry in the current source circuit that generates the baseline compensation current, and a control circuit. The control circuit is configured to generate and couple a plurality of control signals to the parallel-connected, selectively activated transistor circuits, respectively, thereby causing one or more of the parallel-connected, selectively activated transistor circuits to conduct to form the second, compensation current component.
In one aspect of the disclosure each parallel-connected, selectively activated transistor circuit comprises a transistor connected in series with a switch circuit element that is configured to receive a respective one of the plurality of control signals at a control terminal thereof. When a state of the respective control signal closes the switch circuit element, the respective parallel-connected, selectively activated transistor circuit is activated and conducts a current therethrough having a magnitude corresponding to a sizing of the respective transistor.
In one aspect of the disclosure the circuit further comprises a temperature compensation circuit having an input terminal connected to the strain compensation circuit output terminal. The temperature compensation circuit is configured to sense a temperature at the circuit and generate a temperature compensation voltage based on the sensed temperature, and combine the temperature compensation voltage with the compensated voltage at the output terminal of the strain compensation circuit to form a combined strain and temperature compensated voltage at an output terminal of the temperature compensation circuit.
In one aspect of the disclosure a method is disclosed. The method comprises generating a reference voltage using a voltage reference circuit. The generated reference voltage is provided at an output terminal of the voltage reference circuit, and comprises a first transfer function of voltage with respect to strain. The method also comprises generating a strain compensation voltage using a strain compensation circuit that has an input terminal connected to the output terminal of the voltage reference circuit. The strain compensation voltage comprises a second transfer function of voltage with respect to strain that is substantially opposite that of the first transfer function. The method also comprises combining the reference voltage with the strain compensation voltage to form a compensated reference voltage, and outputting the compensating reference voltage at an output terminal of the strain compensation circuit.
In one aspect of the method, the strain compensation circuit comprises a strain dependent circuit element that exhibits an impedance that is a function of strain. Further, in one aspect the method comprises sourcing or sinking a strain compensation current to or from, respectively, the strain compensation circuit using a variable current source circuit, wherein the strain compensation current results in the strain compensation voltage. The method also comprises generating a baseline compensation current using a baseline compensation current generation circuit configured, and generating the strain compensation current based on the baseline compensation current by coupling the variable current source circuit to the baseline compensation current generation circuit.
In one aspect of the method, generating the strain compensation current based on the baes compensation current comprises coupling a plurality of parallel-connected, selectively activated transistor circuits coupled in a current mirror configuration within the variable current source circuit with the baseline compensation circuit generation circuit, and generating, using a control circuit, a plurality of control signals, and coupling the plurality of control signals to the plurality of parallel-connected, selectively activated transistor circuits, respectively, thereby causing one or more of the parallel-connected, selectively activated transistor circuits to conduct to form the strain compensation current.
In one aspect of the disclosure, the method further comprises coupling a temperature compensation circuit having an input terminal to the strain compensation circuit output terminal, and sensing a temperature at the voltage reference circuit. Further, the method also comprises generating a temperature compensation voltage based on the sensed temperature using the temperature compensation circuit, and combining the temperature compensation voltage with the compensated reference voltage at the output terminal of the strain compensation circuit to form a combined strain and temperature compensated reference voltage at an output terminal of the temperature compensation circuit.
In another aspect of the disclosure circuitry for providing a stable voltage reference may be constituted by a plurality of instructions that are stored on a non-transitory computer readable medium. Such circuitry may comprise, for example, one or more circuit cells in an application-specific integrated circuit library (ASIC), and be incorporated into various circuit designs. The instructions, when executed by a processor, are employed to generate circuitry that is configured to generate a reference voltage using a voltage reference circuit, where the generated reference voltage is provided at an output terminal of the voltage reference circuit, and the reference voltage comprises a first transfer function of voltage with respect to strain. The circuitry is further configured to generate a strain compensation voltage using a strain compensation circuit that has an input terminal connected to the output terminal of the voltage reference circuit, wherein the strain compensation voltage comprises a second transfer function of voltage with respect to strain that is substantially opposite that of the first transfer function. The circuitry is still further configured to combine the reference voltage with the strain compensation voltage to form a compensated reference voltage, and output the compensating reference voltage at an output terminal of the strain compensation circuit.
In another aspect of the disclosure, the circuitry generated in response to the executed instructions is configured to source or sink a strain compensation current to or from, respectively, the strain compensation circuit using a variable current source circuit. The strain compensation current results in the strain compensation voltage. The circuitry is further configured to generate a baseline compensation current using a baseline compensation current generation circuit configured; and generate the strain compensation current based on the baseline compensation current by coupling the variable current source circuit to the baseline compensation current generation circuit. In one aspect of the disclosure generating the strain compensation current based on the baseline compensation current comprises coupling a plurality of parallel-connected, selectively activated transistor circuits coupled in a current mirror configuration within the variable current source circuit with the baseline compensation circuit generation circuit, and generating, using a control circuit, a plurality of control signals, and coupling the plurality of control signals to the plurality of parallel-connected, selectively activated transistor circuits, respectively, thereby causing one or more of the parallel-connected, selectively activated transistor circuits to conduct to form the strain compensation current.
In another aspect of the disclosure the circuitry is configured to couple a temperature compensation circuit having an input terminal to the strain compensation circuit output terminal, and sense a temperature at the voltage reference circuit. The circuitry is also configured to generate a temperature compensation voltage based on the sensed temperature using the temperature compensation circuit, and combine the temperature compensation voltage with the compensated reference voltage at the output terminal of the strain compensation circuit to form a combined strain and temperature compensated reference voltage at an output terminal of the temperature compensation circuit.
The same reference numbers or other reference designators are used in the drawings to designate the same or similar (functionally and/or structurally) features.
The following description provides many different examples for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present description. The drawings are not drawn to scale.
One conventional way of reducing voltage reference drift is to take steps to minimize the amount of stress/strain experienced by the circuitry. For example, use of a low stress gradient floor plan (i.e., circuitry layout on the die), use of a polyamide layer, low stress packaging, and a low stress die attach process.
Another conventional approach to improving the precision of an output reference voltage is to compensate for any strain/stress that is experienced by the voltage reference circuitry. For example, a stress sensor circuit may be located local to the voltage reference circuitry, and then compensation is employed to the reference voltage circuitry output to compensate for voltage drift caused by the detected stress.
One compensation solution known to the inventors of the present disclosure is illustrated in
The graph 20 in
The solution of
Another solution known to the inventors employs two different types of strain gauges to generate a differential signal and then utilizes temperature compensation on the residual temperature response. Such a solution needs first and second order temperature compensation, and much of the detected strain information can be lost due to multiple sources of error.
Another solution known to the inventors utilizes a Wheatstone bridge type architecture, where a principle that a ratio of resistors exhibits a zero potential difference when no strain exists is implemented. Thus, a detected potential difference is indicative of a detected strain. This solution needs the material of the resistors in the bridge circuitry to be the same with respect to temperature drift, otherwise temperature error may alias into the stress signal. Further, care is required to ensure that only one resistor in the bridge arrangement is strain sensitive, or that the resistors are arranged so that one resistor experiences compressive stress while another experiences tensile stress to create a differential signal. These requirements may also be sources of error. In addition, subsequent active processing and driver circuitry is needed for compensation, which adds still further error.
The present disclosure is directed to a circuit and method of providing a precision voltage reference. The solution employs a combined strain detection and strain compensation mechanism within the circuitry that exhibits a transfer function (e.g., voltage drift with respect to strain) that is substantially the inverse to the transfer function of the voltage reference circuitry. The two transfer functions essentially cancel one another, thereby resulting in a compensated reference voltage that is substantially independent of strain. According to one aspect of the disclosure, the strain detection circuitry is also the compensation circuitry, and the compensation is performed in the analog domain, thereby reducing a number of circuitry stages and errors associated therewith.
Still referring to
In one aspect of the disclosure, the voltage reference circuit 72 comprises a zener diode that exhibits a zener breakdown voltage equal to the desired reference output voltage at the output terminal 74 when it is reverse biased. Alternatively, the reference voltage circuit 72 may comprise other type voltage reference circuits, such as a bandgap reference voltage circuit or other type reference voltage circuit, and any such alternatives are contemplated as falling within the scope of the disclosure.
In operation, the circuit 70 operates as follows. Under reverse bias breakdown conditions, the voltage reference circuit 72, operating in one example, as a zener diode, conducts a zener breakdown current therethrough, which is illustrated as IBIAS. The current source circuit 76 provides a current to the output terminal 74 with a current magnitude of IBIAs+ISX, wherein ISX is a compensation current and may be positive or negative. As the zener diode is conducting IBIAS, the compensation current ISX passes through the strain compensation circuit 78 and is sinked or sourced by the variable current source circuit 82.
The compensation current ISX conducts through the strain compensation circuit 78 and causes a voltage drop thereacross. For example, in one aspect of the disclosure the strain compensation circuit 78 is a circuit having an impedance that is a function of strain, such as a piezoelectric resistor RSG. In this manner, if the compensation current ISX were fixed, a voltage drop across the strain compensation circuit 78 will vary in response to variations in strain experienced by the circuit 70. Optionally, as strain experienced by the circuit 70 causes a “drift” of the reference voltage at the reference voltage output terminal 74 in a generally positive, linear fashion over variations in strain, like graph 50 showing transfer function 52 in
Referring to
A tuning of the circuit 70′ is via the current source circuit 76′ and the variable current source circuit 82′. The current source circuit 76′ comprises a baseline compensation current source circuit 96 that generates a baseline compensation current IBASELINE (e.g., some fractional value of ISX). This current is mirrored to a plurality of parallel-configured transistors 98 (e.g., in a current mirror circuit topology) that may be selectively connected to the voltage reference output terminal 74 via switches 100. In one embodiment the current mirror transistors 98 are sized differently from one another in order to conduct different magnitudes of current, if their associated switch 100 is closed. Alternatively, each of the transistors 98 may be sized roughly equally, or different ones can be sized the same while others are sized different from one another.
Still referring to
As can be seen in
In one aspect of the disclosure, a tuning process can be done after fabrication and packaging of the circuitry 70, and before being sent out to customers. By characterizing a plurality of different devices in a device test setting where varying amounts of stress/strain are applied to the finished package, the strain sensitivities of the strain compensation circuit and the voltage reference circuit can be ascertained. With a determination of the variation between the sensitivities established, it can be determined how much tuning is required to make the transfer function of the strain compensation circuit 78 substantially the opposite of the transfer function of the voltage reference circuit 72. The tuning is then achieved by establishing which one or more of the switches 100 and 104 are to be closed and which are to be open, and programming a control circuit to provide the requisite control signals to open/close the appropriate switches. Further, such device characterization can be done for each production lot of the circuitry, or for each packaging lot, or according to other criteria, and all such alternatives are contemplated as falling within the scope of the present disclosure.
In one aspect of the disclosure, the method further comprises sourcing or sinking a strain compensation current to or from, respectively, the strain compensation circuit using a variable current source circuit, wherein the strain compensation current results in the strain compensation voltage. The method may also comprise generating a baseline compensation current using a baseline compensation current generation circuit configured, and generating the strain compensation current based on the baseline compensation current by coupling the variable current source circuit to the baseline compensation current generation circuit. In one aspect generating the strain compensation current based on the baes compensation current comprises coupling a plurality of parallel-connected, selectively activated transistor circuits coupled in a current mirror configuration within the variable current source circuit with the baseline compensation circuit generation circuit, and generating, using a control circuit, a plurality of control signals, and coupling the plurality of control signals to the plurality of parallel-connected, selectively activated transistor circuits, respectively, thereby causing one or more of the parallel-connected, selectively activated transistor circuits to conduct to form the strain compensation current.
In one aspect of the disclosure, the method further comprises coupling a temperature compensation circuit having an input terminal to the strain compensation circuit output terminal, sensing a temperature at the voltage reference circuit, generating a temperature compensation voltage based on the sensed temperature using the temperature compensation circuit, and combining the temperature compensation voltage with the compensated reference voltage at the output terminal of the strain compensation circuit to form a combined strain and temperature compensated reference voltage at an output terminal of the temperature compensation circuit.
In another aspect of the disclosure, circuitry for providing a stable voltage reference may be constituted by a plurality of instructions that are stored on a non-transitory computer readable medium. Such circuitry may comprise, for example, one or more circuit cells in an application-specific integrated circuit library (ASIC), and be incorporated into various circuit designs. The instructions, when executed by a processor, are employed to generate circuitry that is configured to generate a reference voltage using a voltage reference circuit, where the generated reference voltage is provided at an output terminal of the voltage reference circuit, and the reference voltage comprises a first transfer function of voltage with respect to strain. The circuitry is further configured to generate a strain compensation voltage using a strain compensation circuit that has an input terminal connected to the output terminal of the voltage reference circuit, wherein the strain compensation voltage comprises a second transfer function of voltage with respect to strain that is substantially opposite that of the first transfer function. The circuitry is still further configured to combine the reference voltage with the strain compensation voltage to form a compensated reference voltage, and output the compensating reference voltage at an output terminal of the strain compensation circuit.
In another aspect of the disclosure, the circuitry generated in response to the executed instructions is configured to source or sink a strain compensation current to or from, respectively, the strain compensation circuit using a variable current source circuit. The strain compensation current results in the strain compensation voltage. The circuitry is further configured to generate a baseline compensation current using a baseline compensation current generation circuit configured; and generate the strain compensation current based on the baseline compensation current by coupling the variable current source circuit to the baseline compensation current generation circuit. In one aspect of the disclosure generating the strain compensation current based on the baseline compensation current comprises coupling a plurality of parallel-connected, selectively activated transistor circuits coupled in a current mirror configuration within the variable current source circuit with the baseline compensation circuit generation circuit, and generating, using a control circuit, a plurality of control signals, and coupling the plurality of control signals to the plurality of parallel-connected, selectively activated transistor circuits, respectively, thereby causing one or more of the parallel-connected, selectively activated transistor circuits to conduct to form the strain compensation current.
In another aspect of the disclosure the circuitry is configured to couple a temperature compensation circuit having an input terminal to the strain compensation circuit output terminal, and sense a temperature at the voltage reference circuit. The circuitry is also configured to generate a temperature compensation voltage based on the sensed temperature using the temperature compensation circuit, and combine the temperature compensation voltage with the compensated reference voltage at the output terminal of the strain compensation circuit to form a combined strain and temperature compensated reference voltage at an output terminal of the temperature compensation circuit.
While the use of particular transistors are described herein, other transistors (or equivalent devices) may be used instead with little or no change to the remaining circuitry. For example, a metal-oxide-silicon FET (“MOSFET”) (such as an n-channel MOSFET, nMOSFET, or a p-channel MOSFET, pMOSFET), a bipolar junction transistor (BJT—e.g. NPN or PNP), insulated gate bipolar transistors (IGBTs), and/or junction field effect transistor (JFET) may be used in place of or in conjunction with the devices disclosed herein. The transistors may be depletion mode devices, drain-extended devices, enhancement mode devices, natural transistors or other type of device structure transistors. Furthermore, the devices may be implemented in/over a silicon substrate (Si), a silicon carbide substrate (SiC), a gallium nitride substrate (GaN) or a gallium arsenide substrate (GaAs).
While certain elements of the described examples are included in an integrated circuit and other elements are external to the integrated circuit, in other example embodiments, additional or fewer features may be incorporated into the integrated circuit. In addition, some or all of the features illustrated as being external to the integrated circuit may be included in the integrated circuit and/or some features illustrated as being internal to the integrated circuit may be incorporated outside of the integrated. As used herein, the term “integrated circuit” means one or more circuits that are: (i) incorporated in/over a semiconductor substrate; (ii) incorporated in a single semiconductor package; (iii) incorporated into the same module; and/or (iv) incorporated in/on the same printed circuit board.
Uses of the phrase “ground” in the foregoing description include a chassis ground, an Earth ground, a floating ground, a virtual ground, a digital ground, a common ground, and/or any other form of ground connection applicable to, or suitable for, the teachings of this description. Unless otherwise stated, “about,” “approximately,” or “substantially” preceding a value means+/−10 percent of the stated value, or, if the value is zero, a reasonable range of values around zero.
Modifications are possible in the described examples, and other implementations are possible, within the scope of the claims.
Number | Date | Country | Kind |
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202341048797 | Jul 2023 | IN | national |