Various aspects of this disclosure may pertain to an incremental economical series of manufacturing processes of visible light rectenna arrays for the conversion of solar energy to electricity.
Rectifiers for AC to DC conversion of high frequency signals have been well known for decades. A particular type of diode rectifier when coupled to an antenna, called a Rectenna, has also been known for decades. More specifically, over 20 years ago, Logan described using an array of Rectennas to capture and convert microwaves into electrical energy in U.S. Pat. No. 5,043,739 granted Aug. 27, 1991. However, the dimensions of the antenna limited the frequency until recently, when Gritz, in U.S. Pat. No. 7,679,957 granted Mar. 16, 2010, described using a similar structure for converting infrared light into electricity, and Pietro Siciliano suggested that such a structure may be used for sunlight in “Nano-Rectenna For High Efficiency Direct Conversion of Sunlight to Electricity: by Pietro Siciliano of The Institute for Microelectronics and Microsystems IMM-CNR, Lecce (Italy).
Still, the minimum dimensions required for such visible light rectennas are generally in the tens of nanometers. While these dimensions may be accomplished by today's deep submicron masking technology, such processing is typically far more expensive than the current solar cell processes, which require much larger dimensions.
Still, as Logan pointed out in U.S. Pat. No. 5,043,739, the efficiency of microwave Rectennas can be as high as 40%, more than double that of typical single junction poly-silicon solar cell arrays, and when using metal-oxide-metal (MOM) rectifying diodes, as Pietro suggests, no semiconductor transistors are needed in the array core.
As such, it may be advantageous to be able to utilize the existing fine geometry processing capability of current semiconductor fabrication without incurring the cost of such manufacturing.
Also, recently, Rice University reported that their researchers created a carbon nanotube (CNT) thread with metallic-like electrical and thermal properties. Furthermore, carbon nanotube structures are becoming more manufacturable, as described by Rosenberger et al. in U.S. Pat. No. 7,354,977 granted Apr. 8, 2008. Various forms of continuous CNT growth may have also been contemplated, such as Lemaire et. al. repeatedly harvesting a CNT “forest’ while it is growing in U.S. Pat. No. 7,744,793 granted Jun. 29, 2010, and/or put into practice using techniques described by Predtechensky et al. in U.S. Pat. No. 8,137,653 granted Mar. 20, 2012. Grigorian et al. describes continuously pushing a carbon gas through a catalyst backed porous membrane to grow CNTs in U.S. Pat. No. 7,431,985 granted Oct. 7, 2008.
Furthermore, others have contemplated using CNTs for various structures such as Rice University's CNT thread as described in “Rice's carbon nanotube fibers outperform copper,” by Mike Williams, posted on Feb. 13, 2014 at: news.rice.edu/2014/02/13/rices-carbon-nanotube-fibers-outperform-copper-2; magnetic data storage as described by Tyson Winarski in U.S. Pat. No. 7,687,160 granted Mar. 30, 2010; and in particular, antenna-based solar cells, as described by Tadashi Ito et al. in US Patent Publication 2010/0244656 published Sep. 30, 2010. Still, Ito et al. did not describe methods to inexpensively construct carbon nanotube solar antennas for efficient conversion of solar energy.
Various embodiments of the invention may relate to ways to manufacture structures of CNT rectenna arrays for converting sunlight into electricity, which may utilize stamps made using current IC masking techniques and self-aligning process steps and to achieve the dimensions required for the antennas.
The structure of the rectenna array may include an array of CNT antennas connecting a ground plane to a negative voltage plane through metal insulator insulator carbon (MIIC) diodes. The antennas may be of varying lengths and orientations, distributed for maximum reception of the full spectrum of ambient sunlight either from ¼ wavelengths or harmonic multiples of ¼ wavelengths. The small diameter CNTs connecting to the larger voltage plane may also form geometric diodes. Single ¼-wavelength antenna diode combinations may half-wave rectify the received light. Two coupled ¼-wavelength antenna diode combinations may full-wave rectify the received light.
The manufacture of these arrays may be incrementally modified to transfer from a low volume semiconductor related process to a high volume glass and plastic based continuous flow process.
In one embodiment, the rectenna arrays may be constructed by a series of depositions from a glass base up to a plastic back such that the antennas collect light through the glass base. Aluminum bus bars may further reflect the received or retransmitted light to be re-collected by the antennas.
In another embodiment, stamps may be constructed to pattern metals for selectively etching the structures necessary to create the CNT antenna array. Alternatively, the stamps may be used to directly pattern metal, and may be further used to pattern drums for high volume continuous CNT antenna array manufacturing.
In yet another embodiment, a shadow mask may be used to selectively etch a deposited oxide. Furthermore, a clear plastic sheet may separate metal bus bars from the CNT antennas. A laser may be used to form vias in the plastic sheet. The plastic sheet may be a polycarbonate sheet. A cover layer of plastic may be deposited on the bus bars, thereby forming a continuous roll of flexible solar cells.
Various embodiments of the invention will now be described in connection with the attached drawings, in which:
Embodiments of the present invention are now described with reference to
An electrical diagram 10 of a combined diode and antenna according to an embodiment of the invention is shown in
Reference is now made to
Reference is now made to
Reference is now made to
In order to efficiently rectify visible light, the diodes may need to have a cutoff frequency above 700 Thz. This may require diodes (46 or 52) with sufficiently small capacitance, which may be accomplished by growing CNTs under 15 nanometers in diameter to oxides that are each a few nanometers thick. In addition to a MOC or MIIC diode, the small diameter of the CNT connecting to the large flat side of the power plane may form a geometric diode. Furthermore, the antennas lengths and directions may vary to cover the entire spectrum of un-polarized sun light. This may be accomplished by varying the distance the CNTs 43 must cover from the ground 41 plane to the power plane 40, such that the difference of the shortest to the longest CNT is greater than the difference between a ¼ wavelength of ultraviolet light (˜80 nanometers) and ¼ wavelength of infrared light (˜640 nanometers). This may ensure that at least one harmonic of all frequencies of light may be covered by the range of CNT lengths.
Such small structures may require the combination of complex semiconductor processing coordinated with controlled growth of carbon nanotube antennas. It may, therefore, be desirable to leverage as much of existing semiconductor processing as possible, and to incrementally modify the process to reduce cost and increase volume. As such, an initial manufacturing process may rely on existing semiconductor mask and etching operations, and may gradually change to a continuous flow of maskless operations.
Reference is now made to
Semiconductor masking technology typically consists of steppers and contact printers. Typically steppers can print very fine geometries, such as the fingers above, but can only expose a small part of the die at a time. On the other hand, contact printers may expose the whole wafer at one time, but can only align and print very large objects. In order to construct a wafer-wide array of the structure shown in
Reference is now made to
Reference is now made to
It is well known that a polarizing grate may transmit light whose wavelength may be larger than the grate's spacing, if it is polarized perpendicular to the grate, and reflects light of the same wavelength, which may be parallel to the direction of the lines in the grate. By shining vertically polarized light up through the glass and plastic sheet, which may have a longer wavelength than the spacing between the fingers, resist over the gaps 162 and 163 and the ends of the rows of fingers between the vertical bus lines 166 and 167 and the bus lines 163, may be exposed. Washing away the unexposed resist may leave the resist 160, which may then be cured, forming a continuous serpentine separation between the power 164 and ground 163 bus lines. Laser scribing may then be used to form vias 165 through the plastic sheet. Optionally, an additional spray may be applied before laser scribing to enhance the scribing of the vias. Alternatively, non-polarized light may be used, which may be partially absorbed by the CNT antennas when the left and right vertical bus lines 166 and 167 may be electrically connected through a resistor which may remove the electrical energy, leaving the area not connected with CNT antennas to transmit the full power of the light, thereby exposing the resist 160.
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Reference is now made to
It will be appreciated by persons skilled in the art that the present invention is not limited by what has been particularly shown and described hereinabove. Rather the scope of the present invention includes both combinations and sub-combinations of various features described hereinabove as well as modifications and variations which would occur to persons skilled in the art upon reading the foregoing description and which are not in the prior art.
This application is a continuation-in-part of U.S. patent application Ser. No. 15/133,807, filed on Apr. 20, 2016, and incorporated herein by reference.
Number | Date | Country | |
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Parent | 15133807 | Apr 2016 | US |
Child | 15249953 | US |