Claims
- 1. An individual configuration, comprising:
a construction having a first structure and a second structure aligned with respect to said first structure; and a position sensing device for sensing a relative position between said first structure and said second structure.
- 2. The individual configuration according to claim 1, further comprising a position storing device for storing information on the relative position between said first structure and said second structure and connected to said position sensing device.
- 3. The individual configuration according to claim 2, wherein said position sensing device has a comparison device for comparing the information stored in said position storing device with a sensed relative position.
- 4. The individual configuration according to claim 1, wherein said first structure and said second structure are respectively formed by electrically conducting contacts touching in a partially overlapping manner.
- 5. The individual configuration according to claim 4, wherein said electrically conducting contacts forming said first structure have a smaller surface area than said electrically conducting contacts forming said second structure.
- 6. The individual configuration according to claim 5, wherein the information on the relative position is determined by a number of said electrically conducting contacts of said first structure touching an electrically conducting contact forming said second structure.
- 7. The individual configuration according to claim 4, wherein:
said electrically conducting contacts of said first structure, lie in a row, and are spaced apart from one another by a first distance; and said electrically conducting contacts of said second structure, lie in a row, and are spaced apart from one another by a second distance and the first distance and the second distance are different.
- 8. The individual configuration according to claim 1, further comprising a MOS transistor having a buried channel and a gate, said first structure forming said buried channel of said MOS transistor, and said second structure forming said gate of said MOS transistor.
- 9. The individual configuration according to claim 8, wherein the information on the relative position is a deviation from a predetermined position.
Priority Claims (1)
Number |
Date |
Country |
Kind |
00106475.7 |
Mar 2000 |
EP |
|
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application is a continuation of copending International Application No. PCT/DE01/00695, filed Feb. 22, 2001, which designated the United States and was not published in English.
Continuations (1)
|
Number |
Date |
Country |
Parent |
PCT/DE01/00695 |
Feb 2001 |
US |
Child |
10253176 |
Sep 2002 |
US |