Induction Memory Cell

Abstract

The induction memory cell includes an electronic circuit that can internally control the “on” or “off” state of a magnetic field within a wireless power transmission circuit. The induction memory cell can control external devices. When the induction memory cell is used in an array it can be programmed to retain binary information such as “on” as a binary digit of one or “off” as a binary digit of zero. The induction memory cell “on” or “off” state can be controlled via a brief emission of laser light, wireless induction from another induction memory cell or mechanical switch. Each photo resistor for controlling the “on” or “off” state is enclosed in a short tube with one opening for each tube that restricts some ambient light but also allows laser light to reach each photo resistor.

Description

BACKGROUND OF THE INVENTION

Field of Invention

The present invention relates to a programmable solid state induction memory circuit, solid state induction storage medium for electronic devices, and solid state induction switch (“Flip Flop” circuit).

2. Discussion of the State of the Art

There are several devices that can store data, act as switches or can be programmed for digital storage needs or computing needs. Currently, in order to create a solid state circuit that can hold an “on” or “off” state or one BIT of data such as a “Flip Flop” circuit requires up to eight or nine components. Also the current state of wireless power transmission circuits requires an external switch in order to terminate the magnetic field in the primary coil.

Therefore what is clearly needed is a way to internally turn “off ” or “on” the magnetic field in the primary coil without using an external switch for the wireless power transmission circuit. The current state of the art can not solely use a wireless power transmission circuit as a solid state switch or retain binary data because its incapable of retaining an internal “on” or “off” state in the primary coil on demand. Also the current state of the art for “Flip Flop” circuits requires a need to reduce the amount of required components.

SUMMARY OF THE INVENTION

In one embodiment of the invention an induction memory cell is provided, comprising two photo resistors that receive laser light to change the “on” or “off” state of the magnetic field in the primary coil of the circuit depending on which photo resistor receives the laser light. One 470 ohm resistor prevents the “off” state of the magnetic field in the primary coil from changing unintentionally to a state of “on”. Each photo resistor is enclosed in a short tube with one opening for each tube that restricts some ambient light but also allows laser light to reach each photo resistor.

Also in one embodiment an electronic circuit that creates a solid state induction switch that can hold the “on” or “off” state of a magnetic field (alternating current) within the primary coil that can control external devices. Also in one embodiment an electronic circuit that creates a solid state switch that when used in an array can be programmed to retain binary information such as “on” as a binary digit of one or “off” as a binary digit of zero. Also in one embodiment the induction memory cell can act as a solid state switch or retain binary data; which the “on” or “off” state can be set via laser light, wireless induction from another induction memory cell or mechanical switch.

In another aspect of the invention a method for turning “on” or “off” the magnetic field on the primary coil is provided, comprising the steps, (a) laser light is aimed toward the photo resistor connected to the base and emitter of the NPN transistor turns the magnetic field “on” in the primary coil, (b) laser light is aimed toward the photo resistor connected to the base and collector of the NPN transistor turns the magnetic field “off” in the primary coil.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a visual description of a single induction memory cell utilizing two photo resistors for setting an “on” or “off” state in the primary coil according to the embodiment of the invention. FIG. 2 is a visual description of two induction memory cells in a configuration which one induction memory cell can change the state of a second induction memory cell according to the embodiment of the invention. FIG. 3 shows several induction cells configured to demonstrate a 4 BIT memory device; which can be reset and reprogrammed via physical switches or laser light according to the embodiment of the invention. FIG. 4 is an illustration of the induction memory cell which has an extra input coil in order to receive an induction voltage from another induction memory cell that changes the “on” and “off” cell state according to the embodiment of the invention.

Claims

1. Induction memory cell comprising of: a. One coil, one NPN transistor, one 470 resistor, two 0.50 inch long tubes and two photo resistors. Either photo resistor receives a brief burst of laser light to internally change the “on” or “off” state of the magnetic field in a wireless power transmission circuit primary coil.

2. The induction memory cell of claim 1, wherein each photo resistor is enclosed in a short tube (not shown in drawing) with one opening for each tube that restricts some ambient light but also allows laser light to reach each photo resistor, and

3. Method for turning “on” or “off” the magnetic field in the primary coil a. Laser light is briefly aimed toward the photo resistor connected to the base and emitter of the NPN transistor turns the magnetic field “on” in the primary coil or laser light is briefly aimed toward the photo resistor connected to the base and collector of the NPN transistor turns the magnetic field “off” in the primary coil.