Claims
- 1. An information storage card comprising:a support card having a first recess on a first surface thereof and a second recess on the first surface thereof, the second recess being adapted to receive an adhesive seal; and a nonvolatile semiconductor memory module at least partially in the first recess, the nonvolatile semiconductor memory module having an exterior connection terminal, wherein, if the second recess receives the adhesive seal, then writing information to the nonvolatile semiconductor memory module is prohibited, and wherein the second recess is offset from a center line along a lengthwise dimension of the support card.
- 2. The information storage card according to claim 1, wherein the second recess has a circular shape.
- 3. The information storage card according to claim 2, wherein the second recess has a diameter of approximately 10 mm.
- 4. The information storage card according to claim 3, wherein the nonvolatile semiconductor memory module comprises at least one NAND flash EEPROM chip.
- 5. The information storage card according to claim 1, wherein a lower surface of the second recess comprises a non-conductive material.
- 6. The information storage card according to claim 5, wherein the support card is made of the non-conductive material.
- 7. The information storage card according to any one of claims 1-5, wherein the support card further comprises a third recess having a rectangular shape on the first surface, the third recess being adapted to receive a label, and the second recess being between the first recess and the third recess.
- 8. An information storage card having a first side and a second side, the information storage card comprising:a nonvolatile semiconductor memory module having a flat connection terminal exposed for connection at the first side; and a first designating area on the first side, the first designating area being adapted to receive an adhesive seal and being visibly distinguishable from a remaining portion of the first side, wherein, if the first designating area receives the adhesive seal, then writing information to the nonvolatile semiconductor memory module is prohibited, and wherein the first designating area is offset from a center line along a lengthwise dimension of the information storage card.
- 9. The information storage card according to claim 8, wherein the first designating area has a circular shape.
- 10. The information storage card according to claim 9, wherein the first designating area has a diameter of approximately 10 mm.
- 11. The information storage card according to claim 10, wherein the nonvolatile semiconductor memory module comprises at least one NAND flash EEPROM chip.
- 12. The information storage card according to claim 8, wherein the first designating area comprises a non-conductive material.
Priority Claims (1)
Number |
Date |
Country |
Kind |
7-017185 |
Feb 1995 |
JP |
|
Parent Case Info
This is a divisional application of application Ser. No. 09/658,189, filed Sep. 8, 2000, which is a divisional application of application Ser. No. 09/372,678, filed Aug. 12, 1999, now U.S. Pat. No. 6,292,850 which is a divisional application of application Ser. No. 09/143,839, filed Aug. 31, 1998, and now U.S. Pat. No. 6,094,697, which is a divisional application of application Ser. No. 08/592,508, filed Jan. 26, 1996, and now U.S. Pat. No. 6,145,023, which application is entirely incorporated herein by reference.
US Referenced Citations (61)
Foreign Referenced Citations (7)
Number |
Date |
Country |
0 214 478 |
Mar 1987 |
EP |
818554 |
Aug 1959 |
GB |
2 208 029 |
Feb 1989 |
GB |
64-55691 |
Mar 1990 |
JP |
4-16396 |
Jan 1992 |
JP |
10029391 |
Feb 1998 |
JP |
2001229360 |
Aug 2001 |
JP |
Non-Patent Literature Citations (1)
Entry |
European Patent Office Publication, Patent Abstracts of Japan, Publication No. 63137387, dated Jun. 9, 1988. |