FIG. 1 is a top perspective view of an information storage semiconductor element of the present invention;
FIG. 2 is a top view thereof;
FIG. 3 is a bottom view thereof;
FIG. 4 is a front view thereof;
FIG. 5 is a rear view thereof; and,
FIG. 6 is a first side view thereof, wherein the second side view is a mirror image thereof.