Claims
- 1. A method for fabricating an infrared detection device having a plurality of sensor elements, comprising the steps: of:
- forming a plurality of mesas in respective regions defined to correspond to said sensor elements on a surface of a substrate;
- forming a pyroelectric material precursor layer on said surface including said mesas by using a solution of a pyroelectric material precursor; and
- converting said pyroelectric material precursor layer to a pyroelectric film having a thickness of 0.5 .mu.m to 5 .mu.m by a heat treatment consisting of the steps of pre-heating at a first temperature and then baking at a second temperature.
- 2. A method for fabricating an infrared detection device as set forth in claim 1, further comprising the steps of:
- forming a coating layer on the surface of said substrate; and
- wherein in said step of forming said plurality of mesas, said plurality of mesas are formed by the step of selectively removing said coating layer between adjoining said regions defined to correspond to said sensor elements.
- 3. A method for fabricating an infrared detection device having a plurality of sensor elements, comprising the steps of:
- forming a plurality of mesas in respective regions defined to correspond to said sensor elements on a surface of a substrate;
- forming a pyroelectric material precursor layer on said surface including said mesas by using a solution of a pyroelectric material precursor;
- converting said pyroelectric material precursor layer to a pyroelectric film having a thickness of 0.5 .mu.m to 5 .mu.m by a heat treatment consisting of the steps of pre-heating at a first temperature and then baking at a second temperature; and
- selectively removing said pyroelectric film between adjoining said regions defined to correspond to said sensor elements.
Priority Claims (1)
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6-101682 |
Apr 1994 |
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Parent Case Info
This application is a continuation of application Ser. No. 08/660,962, filed Jun. 12, 1996, now abandoned; which is a Divisional of application Ser. No. 08/413,958 filed Mar. 30, 1995, now U.S. Pat. No. 5,583,687.
US Referenced Citations (4)
Foreign Referenced Citations (2)
Number |
Date |
Country |
2 282 261 |
Mar 1995 |
GBX |
7115 |
Mar 1994 |
WOX |
Non-Patent Literature Citations (5)
Entry |
Great Britain Search Report; Application No. GB 9507900.0; Dated Jul. 14, 1995. |
Ferroelectrics vol. 104 1990 (UK) ; R.W. Whatmore et al. "Ferroelectric Materials for IR Sensors State-of-the-Art and Perspectives", pp. 269-283. |
J. Chen et al., "Rapid thermal annealing of sol-gel derived lead zirconate titanate thin films", J. Appl. Phys. 71(9), May 1, 1992, pp. 4465-4469. |
N. Tohge et al., "Preparation of PbZrO.sub.3 0PbTiO.sub.3 Ferroelectric Thin Films by the Sol-Gel Process", J. Am. Ceram. Soc. 74(1), Jan. 1991, pp. 67-71. |
R. Takayama et al., National Technical Report vol. 39 No. 4, Aug. 1993, pp. 122-130. |
Divisions (1)
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Number |
Date |
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Parent |
413958 |
Mar 1995 |
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Continuations (1)
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Number |
Date |
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Parent |
660962 |
Jun 1996 |
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