Claims
- 1. A semiconductor detector for infrared radiation, comprising:
- (a) an absorption superlattice with first and second mini-bands, said mini-bands separated by an energy about equal to the energy of the photons of a frequency of infrared radiation to be detected, said superlattice with carriers in said first mini-band but not in said second mini-band;
- (b) a collector abutting said superlattice, said collector with energy band edge between said mini-bands at said superlattice so carriers in said first mini-band are blocked from said collector but carriers photo-excited by said infrared radiation from said first mini-band to said second mini-band can pass into said collector; and
- (c) a sensor coupled to said collector to detect carriers in said collector.
- 2. The detector of claim 1, wherein:
- (a) said superlattice is made of alternating layers of gallium arsenide and a first aluminum gallium arsenide alloy;
- (b) said collector includes a second aluminum gallium arsenide alloy abutting said superlattice; and
- said sensor includes an insulated transparent conductive gate electrode on said collector.
- 3. The detector of claim 2, wherein:
- (a) said carriers are electrons;
- (b) said superlattice is doped N type;
- (c) said gate electrode is made of material selected from the group consisting of tin oxide and indium tin oxide; and
- (d) said gate electrode is insulated on said collector by silicon dioxide.
- 4. An infrared imaging device for detecting infrared radiation, comprising:
- (a) a plurality of infrared detectors arranged into rows and columns, each of said detectors including:
- i. an absorption superlattice with first and second mini-bands, said mini-bands separated by an energy about equal to the energy of the photons of a frequency of infrared radiation to be detected, said superlattice with carriers in said first mini-band but not in said second mini-band;
- ii. a collector abutting said superlattice, said collector with energy band edge between said mini-bands at said superlattice so carriers in said first mini-band are blocked from said collector but carriers photo-excited by said infrared radiation from said first mini-band to said second mini-band can pass into said collector; and
- iii. a sensor coupled to said collector to detect carriers in said collector; and
- (b) circuitry for addressing each of said detector sensors.
- 5. The device of claim 4, wherein:
- (a) said superlattice is made of alternating layers of gallium arsenide and a first aluminum gallium arsenide alloy;
- (b) said collector includes a second aluminum gallium arsenide alloy abutting said superlattice; and
- (c) said sensor includes an insulated transparent conductive gate electrode on said collector.
- 6. The detector of claim 5, wherein:
- (a) said carriers are electrons;
- (b) said superlattice is doped N type;
- (c) said gate electrode is made of material selected from the group consisting of tin oxide and indium tin oxide; and
- (d) said gate electrode is insulated on said collector by silicon dioxide.
Parent Case Info
This application is a continuation of 926,814 filed 10-31-86, now abandoned, which is a continuation of 570,463 filed 1-13-84, now abandoned.
US Referenced Citations (3)
Number |
Name |
Date |
Kind |
4257055 |
Hess et al. |
Mar 1981 |
|
4278474 |
Blakeslee et al. |
Jul 1981 |
|
4450567 |
Seifres et al. |
May 1984 |
|
Continuations (2)
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Number |
Date |
Country |
Parent |
926814 |
Oct 1986 |
|
Parent |
570463 |
Jan 1984 |
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