Claims
- 1. An infrared imaging device comprising:
- a first conductivity type first semiconductor layer having a first, relatively small energy band gap;
- a first conductivity type second semiconductor layer having a second energy band gap larger than the first energy band gap disposed on the first semiconductor layer and having a surface opposite the first semiconductor layer;
- a light receiving region of the second conductivity type extending from the surface of the second semiconductor layer into the first semiconductor layer and forming a pn junction for collecting charge carriers generated in response to incident infrared light;
- a second conductivity type region in the second semiconductor layer, extending into the first semiconductor layer, and spaced from the light receiving region;
- an electrically insulating layer disposed on the surface; and
- an MIS electrode disposed on the electrically insulating layer between, electrically insulated from, and partially overlapping the light receiving region and the second conductivity type region for controlling transfer of charge carriers from the light receiving region to the second conductivity type region.
- 2. The infrared imaging device of claim 1 wherein the first energy band gap of the first semiconductor layer is 0.1.+-.0.01 eV and the second energy band gap of the second semiconductor layer is at least 0.2 eV.
- 3. The infrared imaging device of claim 1 wherein the light receiving region contains a dopant impurity producing a charge carrier concentration in the light receiving region on the order of 10.sup.15 cm.sup.-3 and the second conductivity type region contains a dopant impurity producing carrier concentration in the second conductivity type region on the order of 10.sup.18 cm.sup.-3.
- 4. The infrared imaging device of claim 1 wherein the light receiving region is 10 to 20 microns square in shape in a cross-section parallel to the surface, the second conductivity type region is 1 to 2 microns square in shape in a cross-section parallel to the surface, and the MIS electrode is 1 to 2 microns wide between the light receiving and second conductivity type regions.
- 5. The infrared imaging device of claim 1 including a second electrode contacting the second conductivity type region.
Priority Claims (1)
Number |
Date |
Country |
Kind |
3-321317 |
Nov 1991 |
JPX |
|
Parent Case Info
This disclosure is a continuation of application Ser. No. 07/929,907, filed Aug. 17, 1992, now abandoned.
US Referenced Citations (6)
Foreign Referenced Citations (11)
Number |
Date |
Country |
0055114 |
Jun 1982 |
EPX |
61139073 |
Jun 1986 |
EPX |
63046765 |
Feb 1988 |
EPX |
63237484 |
Oct 1988 |
EPX |
2272766 |
Nov 1990 |
EPX |
57-32683 |
Feb 1982 |
JPX |
61-188976 |
Aug 1986 |
JPX |
63-160776 |
Jul 1987 |
JPX |
63-46765 |
Feb 1988 |
JPX |
2272766 |
Nov 1990 |
JPX |
2013026 |
Aug 1979 |
GBX |
Continuations (1)
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Number |
Date |
Country |
Parent |
929907 |
Aug 1992 |
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