R. J. Menna, D. R. Capewell, R. U. Martinelli, P. K. York, and R. E. Enstrom, "3.06 .mu.m InGaAsSb/InPSb Diode Lasers Grown by Organometallic Vapor-Phase Epitaxy," Applied Physics Letters, vol. 59, pp. 2127-2129 (Oct. 21, 1991). |
S. R. Kurtz, R. M. Biefeld, L. R. Dawson, K. C. Baucom, and A. J. Howard, "Midwave (4.mu.m) Infrared Lasers and Light-Emitting Diodes with Biaxially Compressed InAsSb Active Regions," Applied Physics Letters, vol. 64, pp. 812-814 (Feb. 14, 1994). |
S. R. Kurtz and R. M. Biefeld, "Magnetophotoluminescence of Biaxially Compressed InAsSb Quantum Wells," Applied Physics Letters, vol. 66, pp. 364-366 (Jan. 16, 1995). |
Z. L. Liau and H. K. Choi, InAs.sub.1-x Sb.sub.x /In.sub.1-y Ga.sub.y As Multiple-Quantum-Well Heterostructure Design for Improved 4-5 .mu.m Lasers, Applied Physics Letters, vol. 64, pp. 3219-3221 (Jun. 13, 1994). |
H. K. Choi and G. W. Turner, "InAsSb/InAlAsSb Strained Quantum-Well Diode Lasers Emitting at 3.9 .mu.m," Applied Physics Letters, vol. 67, pp. 332-334 (Jul. 17, 1995). |
D. Z. Garbozov, R. U. Martinelli, R. J. Menna, P. K., York, H. Lee, S. Y. Narayan, and J. C. Connolly, "2.7-.mu.m InGaAsSb/AlGaAsSb Laser Diodes with Continuous-Wave Operation up to -39.degree.C" Applied Physics Letters, vol. 67, pp. 1346-1348 (Sep. 4, 1995). |
D. H. Chow, R. H. Miles, T. C. Hasenbert, A. R. Kost, Y.-H. Zhang, H. L. Dunlap, and L. West, "Mid-Wave Infrared Diode Lasers based on GaInSb/InAs and InAs/AlSb Superlattices," Applied Physics Letters, vol. 67, pp. 3700-3702 (Dec. 18, 1995). |
J. R. Meyer, I. Vurgaftman, R. Q. Yang, and L. R. Ram-Mohan, "Type-II and Type-I Interband Cascade Lasers," Electronics Letters, vol. 32, pp. 45-46 (Jan. 4, 1996). |
C. A. Wang,. K. F. Jensen, A. C. Jones and H. K. Choi, "n-AlGaSb and GaSb/AlGaSb Double-Heterostructure Lasers Grown by Organometalic Vapor Phase Epitaxy," Applied Physics Letters, vol. 68, pp. 400-402 (Jan. 15, 1996). |
R. M. Biefeld, A. A. Allerman, and M. W. Pelczynski, "Growth of n-and p-Type Al(As)Sb by Metalorganic Chemical Vapor Deposition," Applied Physics Letters, vol. 68, pp. 932-934 (Feb. 12, 1996). |
S. R. Kurtz, R. M. Biefeld, A. A. Allerman, A. J. Howard, M. H. Crawford, and M. W. Pelczynski, "Pseudomorphic InAsSb Multiple Quantum Well Injection Laser Emitting at 3.5 .mu.m," Applied Physics Letters, vol. 68, pp. 1332-1334 (Mar. 4, 1996). |
A. A. Allerman, R. M. Biefeld, and S. R. Kurtz, InAsSb-Based Mid-Infrared Lasers (3.8-3.9 .mu.m) and Light-Emitting Diodes with AlAsSb Claddings and Semimetal Electron Injection, Grown by Metalorganic Chemical Vapor Deposition, Applied Physics Letters, vol. 69, pp. 465-467 (Jul. 22, 1996). |
R. D. Yang, C.-H. Lin, P. C. Chang, S. J. Murry, D. Zhang, S. S. Pei, S. R. Kurtz, A.-N. Chu and F. Ren, "Mid-IR Interband Cascade Electroluminescence in Type-II Quantum Wells," Electronics Letters, vol. 32, pp. 1621-1622 (Aug. 15, 1996). |