An infrared shielding film-coated glass plate comprising a glass substrate and an infrared shielding film formed thereon, wherein the infrared shielding film comprises fine ITO particles having an average primary particle diameter of at most 100 nm dispersed in a matrix containing silicon oxide and titanium oxide and has a film thickness of from 100 to 1,500 nm.
Description
In the accompanying drawing:
FIG. 1 is a cross section illustrating an infrared shielding film-coated glass plate according to one embodiment of the present invention.
Claims
1. An infrared shielding film-coated glass plate comprising a glass substrate and an infrared shielding film formed thereon, wherein the infrared shielding film comprises fine ITO particles having an average primary particle diameter of at most 100 nm dispersed in a matrix containing silicon oxide and titanium oxide and has a film thickness of from 100 to 1,500 nm.
2. The infrared shielding film-coated glass plate according to claim 1, wherein the mass ratio of the fine ITO particles to the matrix in the infrared shielding film is (fine ITO particles)/(matrix)=20/80 to 50/50.
3. The infrared shielding film-coated glass plate according to claim 1, wherein the mass ratio of silicon is oxide to titanium oxide in the infrared shielding film is (SiO2)/(TiO2)=45/55 to 85/15.
4. The infrared shielding film-coated glass plate according to claim 1, wherein the mass ratio of silicon oxide to titanium oxide in the infrared shielding film is (SiO2)/(TiO2)=50/50 to 80/20.
5. The infrared shielding film-coated glass plate according to claim 1, which has a visible light transmittance of at least 70% as stipulated in JIS R3212 (1998).
6. A process for producing an infrared shielding film-coated glass plate, which comprises:
a step of applying a dispersion liquid comprising fine ITO particles having an average primary particle diameter of at most 100 nm, a silicon compound capable of forming a silicone oxide gel, a titanium compound capable of forming a titanium oxide gel and an organic solvent, to the surface of a glass substrate and drying the dispersion liquid to form a fine ITO particles-dispersed layer containing the silicon compound and the titanium compound and/or containing a gel thereof, anda step of firing the glass substrate having the above layer formed thereon in an atmosphere containing oxygen at such a temperature that the glass substrate temperature is from 400° C. to 750° C.
7. The process for producing an infrared shielding film-coated glass plate according to claim 6, wherein the is silicon compound is a polysilazane.
8. The process for producing an infrared shielding film-coated glass plate according to claim 7, wherein as the silicon compound, an alkoxysilane, a partial hydrolysate thereof or a partially hydrolyzed condensate thereof, is further used.
9. The process for producing an infrared shielding film-coated glass plate according to claim 8, wherein the amount of the alkoxysilane, the partial hydrolysate thereof or the partially hydrolyzed condensate thereof is at most 50 mass % based on the entire silicon compounds including the polysilazane.
10. The process for producing an infrared shielding film-coated glass plate according to claim 7, wherein as the silicon compound, a silicon compound containing a Si—C bond is further used.
11. The process for producing an infrared shielding film-coated glass plate according to claim 10, wherein the amount of the alkoxysilane, the partial hydrolysate thereof or the partially hydrolyzed condensate thereof is at most 50 mass % based on the entire silicon compounds including the polysilazane.
12. The process for producing an infrared shielding film-coated glass plate according to claim 6, wherein the titanium compound is a titanium tetraalkoxide compound or a titanium chelate compound.
Patent Application
20070178317
