Patent Application
20220056291
This application claims priority to and the benefit of Korean Patent Application No. 10-2020-0103434, filed on Aug. 18, 2020, in the Korean Intellectual Property Office, the entire content of which is hereby incorporated by reference.
One or more aspects of embodiments of the present disclosure relate to an ink composition for a light-emitting device, and a light-emitting device manufactured using the ink composition.
Light-emitting devices include a plurality of organic thin films stacked between an anode and a cathode. High-molecular weight materials and low-molecular weight materials are used to form the organic thin films. Low-molecular weight organic light-emitting materials are being developed for improved convenience in synthesis and purification.
Low-molecular weight organic light-emitting materials having desired (excellent) efficiency, lifespan, and color purity have been reported and are being put into practice.
A vacuum deposition method may be used to form a thin film using a low-molecular weight organic light-emitting material.
A high-performance organic light-emitting device may be obtained by depositing a low-molecular weight organic light-emitting material with satisfactory thermal stability by a vacuum deposition method on a substrate. However, there is a problem that a high-vacuum facility and/or a complicated manufacturing process is required.
One or more aspects of embodiments of the present disclosure are directed toward an ink composition for a light-emitting device applicable to a solution process and a light-emitting device manufactured using the ink composition.
Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the presented embodiments of the disclosure.
One or more embodiments of the present disclosure provide an ink composition for a light-emitting device including:
a phosphine oxide-based charge transporting organic material;
a first solvent represented by Formula 1; and
a second solvent represented by Formula 2:
HOR1(O)mR2OH, Formula 1
wherein, in Formula 1, R1 and R2 may each independently be a C1-C60 alkylene group, a C3-C10 cycloalkylene group, or a C1-C10 heterocycloalkylene group, and
m may be 0 or 1, and
(HO)aR11O(R12O)nR13(OH)b, Formula 2
wherein, in Formula 2, R11 to R13 may each independently be a C1-C60 alkyl group, a C1-C60 alkylene group, a C3-C10 cycloalkyl group, a C3-C10 cycloalkylene group, a C1-C10 heterocycloalkyl group, or a C1-C10 heterocycloalkylene group,
n may be an integer from 0 to 5, and
a and b may each independently be 0 or 1, and a sum of a and b may be 1.
One or more embodiments of the present disclosure provide a light-emitting device manufactured using the ink composition for a light-emitting device.
One or more embodiments of the present disclosure provide an electronic apparatus including the light-emitting device.
The above and other aspects, features, and advantages of certain embodiments of the disclosure will be more apparent from the following description taken in conjunction with the accompanying drawings, in which:
Reference will now be made in more detail to embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout, and duplicative descriptions thereof may not be provided. In this regard, the present embodiments may have different forms and should not be construed as being limited to the descriptions set forth herein. Accordingly, the embodiments are merely described below, by referring to the drawings, to explain aspects of the present description. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items. Throughout the disclosure, the expression “at least one of a, b or c” may indicate only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof. Expressions such as “one of,” and “selected from,” when preceding a list of elements, modify the entire list of elements and do not modify the individual elements of the list.
As used herein, the singular forms “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. The use of “may” when describing embodiments of the present disclosure refers to “one or more embodiments of the present disclosure”. It will be further understood that the terms “includes,” “including,” “comprises,” and/or “comprising,” when used in this specification, specify the presence of stated features, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and/or groups thereof.
It will be understood that when an element is referred to as being “on,” “connected to,” or “coupled to” another element, it may be directly on, connected, or coupled to the other element or one or more intervening elements may also be present. When an element is referred to as being “directly on,” “directly connected to,” or “directly coupled to” another element, there are no intervening elements present.
When an organic light-emitting device is manufactured by an application method (e.g., a non-vacuum method) utilizing a low-molecular weight or high-molecular weight organic light-emitting material, the characteristics of the organic light-emitting device may still be insufficient, compared with an organic light-emitting device manufactured by a vacuum deposition method.
Organic light-emitting devices developed in the art have been manufactured by utilizing an solution process application method for a hole injection layer, a hole transport layer, and an emission layer and by utilizing a vacuum deposition method for an electron transport layer. Thus, research improvements in application methods for such layers in an organic light-emitting device is desired.
An ink composition for a light-emitting device according to embodiments of the present disclosure includes: a phosphine oxide-based charge transport organic material; a first solvent represented by Formula 1; and a second solvent represented by Formula 2:
HOR1(O)mR2OH, Formula 1
wherein, in Formula 1, R1 and R2 may each independently be a C1-C60 alkylene group, a C3-C10 cycloalkylene group, or a C1-C10 heterocycloalkylene group, and m may be 0 or 1, and
(HO)aR11O(R12O)nR13(OH)b, Formula 2
wherein, in Formula 2, R11 to R13 may each independently be a C1-C60 alkyl group, a C1-C60 alkylene group, a C3-C10 cycloalkyl group, a C3-C10 cycloalkylene group, a C1-C10 heterocycloalkyl group, or a C1-C10 heterocycloalkylene group, n may be an integer from 0 to 5, a and b may each independently be 0 or 1, and a sum of a and b may be 1.
The alkyl group and the alkylene group may each independently be linear or branched.
In Formulae 1 and 2, the OH group may be present at any suitable position of the linear or branched alkyl group or the linear or branched alkylene group.
In some embodiments, the second solvent represented by Formula 2 may be represented by one of Formulae 2-1, 2-2, or 2-3:
wherein, in Formulae 2-1, 2-2 and 2-3, R11, R13, a, b, and n may each independently be the same as described in Formula 2.
In some embodiments, a concentration of the ink composition for a light-emitting device may be about 0.01 percent by weight (wt %) to about 5 wt %, based on a total content of the composition. In some embodiments, a concentration of the ink composition for a light-emitting device may be about 0.1 wt % to about 3 wt %, based on a total content of the composition. When the concentration of the ink composition for a light-emitting device is within any of these ranges, the coating by inkjet may be facilitated, and the layer formed by baking and evaporating the solvent may operate smoothly.
In some embodiments, a weight ratio of the first solvent to the second solvent may be about 20:1 to about 2:1. In some embodiments, a weight ratio of the first solvent to the second solvent may be about 10:1 to about 3:1. When the weight ratio of the first solvent to the second solvent is within any of these ranges, the layer formed by baking and evaporating the solvent may operate smoothly.
In some embodiments, the charge transporting organic material may be an electron transporting organic material.
In some embodiments, a Hansen parameter dP (e.g., δP) value of a mixed solvent of the first solvent and the second solvent may be 9 or higher.
In some embodiments, a Hansen parameter dH (e.g., δH) value of a mixed solvent of the first solvent and the second solvent may be 9 or higher.
The term “Hansen parameter” refers to a parameter used to predict a degree of formation of a solution (e.g., solubility) when a material is added to another material.
Among the Hansen parameters, the dP value is related to the energy from the dipole force (e.g., dipole interactions) between molecules, and the dH value is related to the energy from the hydrogen bonds (e.g., hydrogen bonding) between molecules.
In some embodiments, a difference between the boiling points of the first solvent and the second solvent may be 10° C. or lower.
In some embodiments, a viscosity of a mixed solvent (e.g. mixture) of the first solvent and the second solvent at room temperature may be 30 centipoise (cP) or lower.
In some embodiments, a surface tension of a mixed solvent of the first solvent and the second solvent may be about 30 dyn/cm to about 38 dyn/cm.
In some embodiments, a Hansen parameter dP value of the phosphine oxide-based charge transporting organic material may be 9 or higher.
In some embodiments, a Hansen parameter dH value of the phosphine oxide-based charge transporting organic material may be 5 or higher.
When the Hansen parameter dP value and dH value of the mixed solvent (including the first solvent and the second solvent) are within their respective ranges, when a difference between the boiling points of the first solvent and the second solvent and a viscosity of the mixed solvent at room temperature are within their respective ranges, when a surface tension of a mixed solvent is within the range, and the Hansen parameter dP value and dH value of the phosphine oxide-based charge transporting organic material are within their respective ranges, the ink composition for a light-emitting device may be suitable for use in a solution process (e.g., for application with an inkjet method), and damage to an under layer formed by the ink composition for a light-emitting device may be reduced.
In some embodiments, the first solvent of Formula 1 may include any one of the following compounds:
In some embodiments, the second solvent of Formula 2 may include any one of the following compounds:
In some embodiments, the phosphine oxide-based charge transporting organic material refers to an organic material including a P═O group.
In some embodiments, the phosphine oxide-based charge transporting organic material may include any one of the following compounds:
According to embodiments of the present disclosure, a light-emitting device may include: a first electrode; a second electrode facing the first electrode; and an interlayer located between the first electrode and the second electrode, the interlayer including an emission layer,
and an any layer (e.g., at least one layer) included in the interlayer may be prepared by a preparation method utilizing the ink composition for the light-emitting device including: the phosphine oxide-based charge transport organic material; the first solvent represented by Formula 1; and the second solvent represented by Formula 2.
In an embodiment, the first electrode may be an anode, and the second electrode may be a cathode,
the interlayer may further include a hole transport region located between the first electrode and the emission layer and an electron transport region located between the emission layer and the second electrode,
the hole transport region may include a hole injection layer, a hole transport layer, an emission auxiliary layer, an electron blocking layer, or any combination thereof, and
the electron transport region may include a hole blocking layer, an electron transport layer, an electron injection layer, or a combination thereof.
In an embodiment, the any layer (e.g., the layer included in the interlayer and formed using the ink composition) may be an electron transport layer.
In an embodiment, the preparation method utilizing the ink composition may be an inkjet method.
In an embodiment, the emission layer and the any layer may be in contact (e.g., direct contact) with each other.
In some embodiments, the emission layer may include a host and a dopant, and a molecular weight of the host and a molecular weight of the dopant may each be 640 (e.g., 640 g/mol) or greater. When the molecular weight of the host and the molecular weight of the dopant are each less than 640, and the ink composition for a light-emitting device according to one or more embodiments is applied on the emission layer, the emission layer, which is the under layer (e.g., the underlying emission layer)) may be damaged.
In some embodiments, the ink composition for a light-emitting device may further include a metal-containing material. The metal-containing material will be described below.
In some embodiments, the interlayer may further include a hole injection layer and a hole transport layer, and the hole injection layer, the hole transport layer, and the emission layer may each be prepared according to a solution process (e.g., spin coating, inkjet printing, and/or the like). Such methods of preparing the hole injection layer, the hole transport layer, and the emission layer according to a solution process may include any suitable methods in the art.
According to another aspect of embodiments of the present disclosure, an electronic apparatus may include the light-emitting device.
In some embodiments, the electronic apparatus may further include a thin-film transistor,
wherein the thin-film transistor may include a source electrode and a drain electrode, and
the first electrode of the light-emitting device may be electrically connected to at least one of the source electrode or the drain electrode of the thin-film transistor.
In some embodiments, the electronic apparatus may further include a color filter, a color-conversion layer, a touchscreen layer, a polarization layer, or any combination thereof.
The term “interlayer” as used herein may refer to a single layer and/or a plurality of layers located between the first electrode and the second electrode in the light-emitting device.
Hereinafter, the structure of the light-emitting device 10 according to an embodiment and a method of manufacturing the light-emitting device 10 according to an embodiment will be described in connection with
In
The first electrode 110 may be formed by depositing or sputtering, onto the substrate, a material for forming the first electrode 110. When the first electrode 110 is an anode, a high work function material that may easily inject holes may be used as a material for a first electrode.
The first electrode 110 may be a reflective electrode, a semi-transmissive electrode, or a transmissive electrode. When the first electrode 110 is a transmissive electrode, a material for forming the first electrode 110 may be indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), or any combination thereof. In some embodiments, when the first electrode 110 is a semi-transmissive electrode or a reflective electrode, magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al—Li), calcium (Ca), magnesium-indium (Mg—In), magnesium-silver (Mg—Ag), or any combination thereof may be used as a material for forming the first electrode 110.
The first electrode 110 may have a single-layered structure including (e.g., consisting of) a single layer or a multi-layered structure including two or more layers. In some embodiments, the first electrode 110 may have a triple-layered structure of ITO/Ag/ITO.
The interlayer 130 may be on the first electrode 110. The interlayer 130 may include an emission layer.
The interlayer 130 may further include a hole transport region between the first electrode 110 and the emission layer, and an electron transport region between the emission layer and the second electrode 150.
The interlayer 130 may further include metal-containing compounds (such as organometallic compounds), inorganic materials (such as quantum dots), and/or the like, in addition to various organic materials.
The interlayer 130 may include: i) at least two emitting layers sequentially stacked between the first electrode 110 and the second electrode 150; and ii) a charge-generation layer located between the at least two emitting layers. When the interlayer 130 includes the at least two emitting layers and the charge generation layer, the light-emitting device 10 may be a tandem light-emitting device.
The hole transport region may have i) a single-layered structure including (e.g., consisting of) a single layer including (e.g., consisting of) a single material, ii) a single-layered structure including (e.g., consisting of) a single layer including a plurality of different materials, or iii) a multi-layered structure having a plurality of layers including a plurality of different materials.
In some embodiments, the hole transport region may include a hole injection layer (HIL), a hole transport layer (HTL), an emission auxiliary layer, an electron blocking layer (EBL), or a combination thereof.
For example, the hole transport region may have a multi-layered structure, e.g., a hole injection layer/hole transport layer structure, a hole injection layer/hole transport layer/emission auxiliary layer structure, a hole injection layer/emission auxiliary layer structure, or a hole injection layer/hole transport layer/electron blocking layer structure, wherein constituting layers of each structure are sequentially stacked on the first electrode 110 in each stated order.
The hole transport region may include the compound represented by Formula 201, the compound represented by Formula 202, or any combination thereof:
wherein, in Formulae 201 and 202,
L201 to L204 may each independently be a C3-C60 carbocyclic group unsubstituted or substituted with at least one R10a or a C1-C60 heterocyclic group unsubstituted or substituted with at least one R10a,
L205 may be *—O—*′, *—N(Q201)—*′, a C1-C20 alkylene group unsubstituted or substituted with at least one R10a, a C2-C20 alkenylene group unsubstituted or substituted with at least one R10a, a C3-C60 carbocyclic group unsubstituted or substituted with at least one R10a, or a C1-C60 heterocyclic group unsubstituted or substituted with at least one R10a,
xa1 to xa4 may each independently be an integer from 0 to 5,
xa5 may be an integer from 1 to 10,
R201 to R204 and Q201 may each independently be a C3-C60 carbocyclic group unsubstituted or substituted with at least one R10a or a C1-C60 heterocyclic group unsubstituted or substituted with at least one R10a,
R201 and R202 may optionally be bound to each other via a single bond, a C1-C5 alkylene group unsubstituted or substituted with at least one R10a, or a C2-C5 alkenylene group unsubstituted or substituted with at least one R10a to form a C8-C60 polycyclic group (e.g., a carbazole group and/or the like) unsubstituted or substituted with at least one R10a (e.g., Compound HT16 described herein),
R203 and R204 may optionally be bound to each other via a single bond, a C1-C5 alkylene group unsubstituted or substituted with at least one R10a, or a C2-C5 alkenylene group unsubstituted or substituted with at least one R10a to form a C8-C60 polycyclic group unsubstituted or substituted with at least one R10a, and
na1 may be an integer from 1 to 4.
In some embodiments, Formulae 201 and 202 may each include at least one group represented by Formulae CY201 to CY217:
wherein, in Formulae CY201 to CY217, R10b and R10c may each independently be the same as R10a, ring CY201 to ring CY204 may each independently be a C3-C20 carbocyclic group or a C1-C20 heterocyclic group, and at least one hydrogen in Formulae CY201 to CY217 may be unsubstituted or substituted with R10a.
In some embodiments, in Formulae CY201 to CY217, ring CY201 to ring CY204 may each independently be a benzene group, a naphthalene group, a phenanthrene group, or an anthracene group.
In one or more embodiments, Formulae 201 and 202 may each include at least one group represented by Formula CY201 to CY203.
In one or more embodiments, Formula 201 may include at least one group represented by Formulae CY201 to CY203 and at least one group represented by Formulae CY204 to CY217.
In one or more embodiments, in Formula 201, xa1 may be 1, R201 may be a group represented by any one of Formulae CY201 to CY203, xa2 may be 0, and R202 may be a group represented by Formulae CY204 to CY207.
In one or more embodiments, Formula 201 and 202 may each not include groups represented by Formulae CY201 to CY203.
In one or more embodiments, Formula 201 and 202 may each not include groups represented by Formulae CY201 to CY203, and may include at least one group represented by Formulae CY204 to CY217.
In one or more embodiments, Formula 201 and 202 may each not include groups represented by Formulae CY201 to CY217.
In some embodiments, the hole transport region may include one of Compounds HT1 to HT44 and m-MTDATA, TDATA, 2-TNATA, NPB (NPD), β-NPB, TPD, spiro-TPD, spiro-NPB, methylated-NPB, TAPC, HMTPD, 4,4′,4″-tris(N-carbazolyl)triphenylamine (TCTA), polyaniline/dodecylbenzene sulfonic acid (PANI/DBSA), poly(3,4-ethylene dioxythiophene)/poly(4-styrene sulfonate) (PEDOT/PSS), polyaniline/camphor sulfonic acid (PANI/CSA), polyaniline/poly(4-styrene sulfonate (PANI/PSS), or any combination thereof:
The thickness of the hole transport region may be about 50 (Angstroms) Å to about 10,000 Å, and in some embodiments, about 100 Å to about 4,000 Å. When the hole transport region includes a hole injection layer, a hole transport layer, or any combination thereof, the thickness of the hole injection layer may be about 100 Å to about 9,000 Å, and in some embodiments, about 100 Å to about 1,000 Å, and the thickness of the hole transport layer may be about 50 Å to about 2,000 Å, and in some embodiments, about 100 Å to about 1,500 Å. When the thicknesses of the hole transport region, the hole injection layer, and the hole transport layer are within any of these ranges, excellent hole transport characteristics may be obtained without a substantial increase in driving voltage.
The emission auxiliary layer may increase the light emission efficiency of the device by compensating for an optical resonance distance of the wavelength of light emitted by an emission layer. The electron blocking layer may reduce or eliminate the flow of electrons from an electron transport region. The emission auxiliary layer and the electron blocking layer may include the aforementioned materials.
p-Dopant
The hole transport region may include a charge generating material as well as the aforementioned materials to improve the conductive properties of the hole transport region. The charge generating material may be substantially homogeneously or non-homogeneously dispersed (for example, as a single layer including (e.g., consisting of) the charge generating material) in the hole transport region.
The charge generating material may include, for example, a p-dopant.
In some embodiments, a lowest unoccupied molecular orbital (LUMO) energy level of the p-dopant may be −3.5 eV or less.
In some embodiments, the p-dopant may include a quinone derivative, a cyano group-containing compound, a compound containing elements EL1 and EL2, or any combination thereof.
Non-limiting examples of the quinone derivative include TCNQ, F4-TCNQ, and/or the like.
Non-limiting examples of the cyano group-containing compound include HAT-CN, a compound represented by Formula 221, and/or the like:
wherein, in Formula 221,
R221 to R223 may each independently be a C3-C60 carbocyclic group unsubstituted or substituted with at least one R10a or a C1-C60 heterocyclic group unsubstituted or substituted with at least one R10a, and
at least one of R221 to R223 may each independently be: a C3-C60 carbocyclic group or a C1-C60 heterocyclic group, substituted with a cyano group; —F; —Cl; —Br; —I; a C1-C20 alkyl group substituted with a cyano group, —F, —Cl, —Br, —I, or any combination thereof; or any combination thereof.
In the compound containing elements EL1 and EL2, element EL1 may be a metal, a metalloid, or a combination thereof, and element EL2 may be a non-metal, a metalloid, or a combination thereof.
Non-limiting examples of the metal include: an alkali metal (e.g., lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), and/or the like); an alkaline earth metal (e.g., beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), and/or the like); a transition metal (e.g., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (Co), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), and/or the like); a post-transition metal (e.g., zinc (Zn), indium (In), tin (Sn), and/or the like); a lanthanide metal (e.g., lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), ruthenium(Lu), and/or the like); and/or the like.
Non-limiting examples of the metalloid include silicon (Si), antimony (Sb), tellurium (Te), and/or the like.
Non-limiting examples of the non-metal include oxygen (O), halogen (e.g., F, Cl, Br, I, and/or the like), and/or the like.
For example, the compound containing elements EL1 and EL2 include a metal oxide, a metal halide (e.g., a metal fluoride, a metal chloride, a metal bromide, a metal iodide, and/or the like), a metalloid halide (e.g., a metalloid fluoride, a metalloid chloride, a metalloid bromide, a metalloid iodide, and/or the like), a metal telluride, or any combination thereof.
Non-limiting examples of the metal oxide include a tungsten oxide (e.g., WO, W2O3, WO2, WO3, W2O5, and/or the like), a vanadium oxide (e.g., VO, V2O3, VO2, V2O5, and/or the like), a molybdenum oxide (MoO, Mo2O3, MoO2, MoO3, Mo2O5, and/or the like), a rhenium oxide (e.g., ReO3, and/or the like), and/or the like.
Non-limiting examples of the metal halide include an alkali metal halide, an alkaline earth metal halide, a transition metal halide, a post-transition metal halide, a lanthanide metal halide, and/or the like.
Non-limiting examples of the alkali metal halide include LiF, NaF, KF, RbF, CsF, LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, LiI, NaI, KI, RbI, CsI, and/or the like.
Non-limiting examples of the alkaline earth metal halide include BeF2, MgF2, CaF2, SrF2, BaF2, BeCl2, MgCl2, CaCl2), SrCl2, BaCl2, BeBr2, MgBr2, CaBr2, SrBr2, BaBr2, BeI2, MgI2, CaI2, SrI2, BaI2, and/or the like.
Non-limiting examples of the transition metal halide include a titanium halide (e.g., TiF4, TiCl4, TiBr4, TiI4, and/or the like), a zirconium halide (e.g., ZrF4, ZrCl4, ZrBr4, Zri4, and/or the like), a hafnium halide (e.g., HfF4, HfCl4, HfBr4, Hfi4, and/or the like), a vanadium halide (e.g., VF3, VCl3, VBr3, V13, and/or the like), a niobium halide (e.g., NbF3, NbCl3, NbBr3, Nbi3, and/or the like), a tantalum halide (e.g., TaF3, TaCl3, TaBr3, Tats, and/or the like), a chromium halide (e.g., CrF3, CrCl3, CrBr3, CrI3, and/or the like), a molybdenum halide (e.g., MoF3, MoCl3, MoBr3, MoI3, and/or the like), a tungsten halide (e.g., WF3, WCl3, WBr3, WI3, and/or the like), a manganese halide (e.g., MnF2, MnCl2, MnBr2, MnI2, and/or the like), a technetium halide (e.g., TcF2, TcCl2, TcBr2, TcI2, and/or the like), a rhenium halide (e.g., ReF2, ReCl2, ReBr2, ReI2, and/or the like), an iron halide (e.g., FeF2, FeCl2, FeBr2, FeI2, and/or the like), a ruthenium halide (e.g., RuF2, RuCl2, RuBr2, RuI2, and/or the like), an osmium halide (e.g., OsF2, OsCl2, OsBr2, OsI2, and/or the like), a cobalt halide (e.g., CoF2, CoCl2, CoBr2, CoI2, and/or the like), a rhodium halide (e.g., RhF2, RhCl2, RhBr2, RhI2, and/or the like), an iridium halide (e.g., IrF2, IrCl2, IrBr2, IrI2, and/or the like), a nickel halide (e.g., NiF2, NiCl2, NiBr2, NiI2, and/or the like), a palladium halide (e.g., PdF2, PdCl2, PdBr2, PdI2, and/or the like), a platinum halide (e.g., PtF2, PtCl2, PtBr2, PtI2, and/or the like), a copper halide (e.g., CuF, CuCl, CuBr, CuI, and/or the like), a silver halide (e.g., AgF, AgCl, AgBr, AgI, and/or the like), a gold halide (e.g., AuF, AuCl, AuBr, AuI, and/or the like), and/or the like.
Non-limiting examples of the post-transition metal halide include a zinc halide (e.g., ZnF2, ZnCl2, ZnBr2, ZnI2, and/or the like), an indium halide (e.g., InI3 and/or the like), a tin halide (e.g., SnI2 and/or the like), and/or the like.
Non-limiting examples of the lanthanide metal halide include YbF, YbF2, YbF3, SmF3, YbCl, YbCl2, YbCl3, SmCl3, YbBr, YbBr2, YbBr3, SmBr3, YbI, YbI2, YbI3, SmI3, and/or the like.
Non-limiting examples of the metalloid halide include an antimony halide (e.g., SbCl5 and/or the like) and/or the like.
Non-limiting examples of the metal telluride include an alkali metal telluride (e.g., Li2Te, Na2Te, K2Te, Rb2Te, Cs2Te, and/or the like), an alkaline earth metal telluride (e.g., BeTe, MgTe, CaTe, SrTe, BaTe, and/or the like), a transition metal telluride (e.g., TiTe2, ZrTe2, HfTe2, V2Te3, Nb2Te3, Ta2Te3, Cr2Te3, Mo2Te3, W2Te3, MnTe, TcTe, ReTe, FeTe, RuTe, OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu2Te, CuTe, Ag2Te, AgTe, Au2Te, and/or the like), a post-transition metal telluride (e.g., ZnTe and/or the like), a lanthanide metal telluride (e.g., LaTe, CeTe, PrTe, NdTe, PmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, and/or the like), and/or the like.
When the light-emitting device 10 is a full color light-emitting device, the emission layer may be patterned into a red emission layer, a green emission layer, and/or a blue emission layer, according to a sub-pixel. In one or more embodiments, the emission layer may have a stacked structure. The stacked structure may include two or more layers each independently selected from a red emission layer, a green emission layer, and a blue emission layer. In some embodiments, the two or more layers may be in direct contact with each other. In some embodiments, the two or more layers may be separated from each other. In one or more embodiments, the emission layer may include two or more materials. The two or more materials may include a red light-emitting material, a green light-emitting material, or a blue light-emitting material. The two or more materials may be mixed with each other in a single layer. The two or more materials mixed with each other in the single layer may be to emit white light.
The emission layer may include a host and a dopant. The dopant may be a phosphorescent dopant, a fluorescent dopant, or any combination thereof.
The amount of the dopant in the emission layer may be about 0.01 parts to about 15 parts by weight based on 100 parts by weight of the host.
In some embodiments, the emission layer may include a quantum dot.
The emission layer may include a delayed fluorescence material. The delayed fluorescence material may serve as a host or a dopant in the emission layer.
The thickness of the emission layer may be about 100 Å to about 1,000 Å, and in some embodiments, about 200 Å to about 600 Å. When the thickness of the emission layer is within any of these ranges, improved luminescence characteristics may be obtained without a substantial increase in driving voltage.
The host may include a compound represented by Formula 301:
[Ar301]xb11−[(L301)xb1−R301]xb21 Formula 301
wherein, in Formula 301,
Ar301 and L301 may each independently be a C3-C60 carbocyclic group unsubstituted or substituted with at least one R10a or a C1-C60 heterocyclic group unsubstituted or substituted with at least one R10a,
xb11 may be 1, 2, or 3,
xb1 may be an integer from 0 to 5,
R301 may be hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, a C1-C60 alkyl group unsubstituted or substituted with at least one R10a, a C2-C60 alkenyl group unsubstituted or substituted with at least one R10a, a C2-C60 alkynyl group unsubstituted or substituted with at least one R10a, a C1-C60 alkoxy group unsubstituted or substituted with at least one R10a, a C3-C60 carbocyclic group unsubstituted or substituted with at least one R10a, a C1-C60 heterocyclic group unsubstituted or substituted with at least one R10a, —Si(Q301)(Q302)(Q303), —N(Q301)(Q302), —B(Q301)(Q302), —C(═O)(Q301), —S(═O)2(Q301), or —P(═O)(Q301)(Q302),
xb21 may be an integer from 1 to 5, and
Q301 to Q303 may each be understood by referring to the description of Qi provided herein.
In some embodiments, when xb11 in Formula 301 is 2 or greater, at least two Ar301(s) may be bound via a single bond.
In some embodiments, the host may include a compound represented by Formula 301-1, a compound represented by Formula 301-2, or any combination thereof:
wherein, in Formulae 301-1 to 301-2,
ring A301 to ring A304 may each independently be a C3-C60 carbocyclic group unsubstituted or substituted with at least one R10a or a C1-C60 heterocyclic group unsubstituted or substituted with at least one R10a,
X301 may be O, S, N-[(L304)xb4−R304], C(R304)(R305), or Si(R304)(R305),
xb22 and xb23 may each independently be 0, 1, or 2,
L301, xb1, and R301 may each independently be the same as described above,
L302 to L304 may each independently be the same as described in connection with L301,
xb2 to xb4 may each independently be the same as described in connection with xb1, and
R302 to R305 and R311 to R314 may each independently be the same as described in connection with R301.
In some embodiments, the host may include an alkaline earth metal complex. For example, the host may include a Be complex (e.g., Compound H55) a Mg complex, or any combination thereof. In some embodiments, the host may include a Zn complex.
In some embodiments, the host may include one of Compounds H1 to H124, 9,10-di(2-naphthyl)anthracene (ADN), 2-methyl-9,10-bis(naphthalen-2-yl)anthracene (MADN), 9,10-di-(2-naphthyl)-2-t-butyl-anthracene (TBADN), 4,4′-bis(N-carbazolyl)-1,1′-biphenyl (CBP), 1,3-di-9-carbazolylbenzene (mCP), 1,3,5-tri(carbazol-9-yl)benzene (TCP), or any combination thereof:
The phosphorescent dopant may include at least one transition metal as a center (central) metal.
The phosphorescent dopant may include a monodentate ligand, a bidentate ligand, a tridentate ligand, a tetradentate ligand, a pentadentate ligand, a hexadentate ligand, or any combination thereof.
The phosphorescent dopant may be electrically neutral.
In some embodiments, the phosphorescent dopant may include an organometallic complex represented by Formula 401:
wherein, in Formulae 401 and 402,
M may be a transition metal (e.g., iridium (Ir), platinum (Pt), palladium (Pd), osmium (Os), titanium (Ti), gold (Au), hafnium (Hf), europium (Eu), terbium (Tb), rhodium (Rh), rhenium (Re), or thulium (Tm)),
L401 may be a ligand represented by Formula 402, and xc1 may be 1, 2, or 3, and when xc1 is 2 or greater, at least two L401(s) may be identical to or different from each other,
L402 may be an organic ligand, and xc2 may be an integer from 0 to 4, and when xc2 is 2 or greater, at least two L402(s) may be identical to or different from each other,
X401 and X402 may each independently be nitrogen or carbon,
ring A401 and ring A402 may each independently be a C3-C60 carbocyclic group or a C1-C60 heterocyclic group,
T401 may be a single bond, —O—, —S—, —C(═O)—, —N(Q411)—, —C(Q411)(Q412)—, —C(Q411)═C(Q412)—, —C(Q411)═, or ═C(Q411)═,
X403 and X404 may each independently be a chemical bond (e.g., a covalent bond or a coordinate bond), O, S, N(Q413), B(Q413), P(Q413), C(Q413)(Q414), or Si(Q413)(Q414),
Q411 to Q414 may each independently be the same as described in connection with Q1,
R401 and R402 may each independently be hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, a C1-C20 alkyl group unsubstituted or substituted with at least one R10a, a C1-C20 alkoxy group unsubstituted or substituted with at least one R10a, a C3-C60 carbocyclic group unsubstituted or substituted with at least one R10a, a C1-C60 heterocyclic group unsubstituted or substituted with at least one R10a, —Si(Q401)(Q402)(Q403), —N(Q401)(Q402), —B(Q401)(Q402), —C(═O)(Q401), —S(═O)2(Q401), or —P(═O)(Q401)(Q402),
Q401 to Q403 may each independently be the same as described in connection with Q1,
xc11 and xc12 may each independently be an integer from 0 to 10, and
* and *′ in Formula 402 each indicate a binding site to M in Formula 401.
In one or more embodiments, in Formula 402, i) X401 may be nitrogen, and X402 may be carbon, or ii) X401 and X402 may both (e.g., simultaneously) be nitrogen.
In one or more embodiments, when xc1 in Formula 402 is 2 or greater, two ring A401(s) of the at least two L401(s) may optionally be bound via T402 as a linking group, or two ring A402(s) may optionally be bound via T403 as a linking group (see e.g., Compounds PD1 to PD4 and PD7). T402 and T403 may each independently be the same as described in connection with T401.
L402 in Formula 401 may be any suitable organic ligand. For example, L402 may be a halogen group, a diketone group (e.g., an acetylacetonate group), a carboxylic acid group (e.g., a picolinate group), —C(═O), an isonitrile group, —CN, or a phosphorus group (e.g., a phosphine group or a phosphite group).
The phosphorescent dopant may be, for example, one of Compounds PD1 to PD25 or any combination thereof:
The fluorescent dopant may include an amine group-containing compound, a styryl group-containing compound, or any combination thereof.
In some embodiments, the fluorescent dopant may include a compound represented by Formula 501:
wherein, in Formula 501,
Ar501, L501 to L503, R501, and R502 may each independently be a C3-C60 carbocyclic group unsubstituted or substituted with at least one R10a or a C1-C60 heterocyclic group unsubstituted or substituted with at least one R10a,
xd1 to xd3 may each independently be 0, 1, 2, or 3, and
xd4 may be 1, 2, 3, 4, 5, or 6.
In some embodiments, in Formula 501, Ar501 may include a condensed ring group (e.g., an anthracene group, a chrysene group, or a pyrene group) in which at least three monocyclic groups are condensed.
In some embodiments, xd4 in Formula 501 may be 2.
In some embodiments, the fluorescent dopant may include one of Compounds FD1 to FD36, DPVBi, DPAVBi, or any combination thereof:
The emission layer may include a delayed fluorescence material.
The delayed fluorescence material described herein may be any suitable compound to emit delayed fluorescence via a suitable delayed fluorescence emission mechanism, for example, thermally activated delayed fluorescence (TADF).
The delayed fluorescence material included in the emission layer may serve as a host or as a dopant, depending on the other materials included in the emission layer.
In some embodiments, a difference between a triplet energy level (eV) of the delayed fluorescence material and a singlet energy level (eV) of the delayed fluorescence material may be about 0 eV or greater and about 0.5 eV or smaller. When the difference between a triplet energy level (eV) of the delayed fluorescence material and a singlet energy level (eV) of the delayed fluorescence material is within this range, up-conversion from a triplet state to a singlet state in the delayed fluorescence material may effectively occur, thus improving the luminescence efficiency and/or the like of the light-emitting device 10.
In some embodiments, the delayed fluorescence material may include: i) a material including at least one electron donor (e.g., a π electron-rich C3-C60 cyclic group, such as a carbazole group and/or the like) and at least one electron acceptor (e.g., a sulfoxide group, a cyano group, a π electron-deficient nitrogen-containing C1-C60 cyclic group, and/or the like), ii) a material including a C8-C60 polycyclic group including at least two cyclic groups condensed to each other and sharing boron (B), and/or the like.
Non-limiting examples of the delayed fluorescence material include at least one of Compounds DF1 to DF9:
The emission layer may include quantum dots.
The term “quantum dot” as used herein refers to a crystal of a semiconductor compound (e.g., having a nanometer scale diameter) and may include any suitable material capable of emitting light having an emission wavelengths that depends on the size (diameter) of the crystal.
The diameter of the quantum dot may be, for example, about 1 nm to about 10 nm.
The quantum dots may be synthesized by a wet chemical process, an organic metal chemical vapor deposition process, a molecular beam epitaxy process, or any similar process.
The wet chemical process is a method of growing a quantum dot particle crystal by mixing a precursor material with an organic solvent. When the crystal grows, the organic solvent may naturally serve as a dispersant coordinated on the surface of the quantum dot crystal and may thus control the growth of the crystal. Thus, the wet chemical method may be easier (e.g. simpler) than the vapor deposition process (such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE)). Further, the growth of quantum dot particles may be controlled with a lower manufacturing cost.
The quantum dot may include a Group III-VI semiconductor compound; a Group II-VI semiconductor compound; a Group III-V semiconductor compound; a Group III-VI semiconductor compound; a Group semiconductor compound; a Group IV-VI semiconductor compound; a Group IV element or compound; or any combination thereof.
Non-limiting examples of the Group III-VI semiconductor compound include a binary compound (such as In2S3); a ternary compound (such as AgInS, AgInS2, CuInS, and/or CuInS2); and/or any combination thereof.
Non-limiting examples of the Group II-VI semiconductor compound include a binary compound (such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, and/or MgS); a ternary compound (such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, and/or MgZnS); a quaternary compound (such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and/or HgZnSTe); and/or any combination thereof.
Non-limiting examples of the Group III-V semiconductor compound include a binary compound (such as GaN, GaP, GaAs, GaSb, AIN, AIP, AlAs, AlSb, InN, InP, InAs, and/or InSb); a ternary compound (such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AINP, AINAs, AINSb, AIPAs, AIPSb, InGaP, InNP, InAIP, InNAs, InNSb, InPAs, InPSb, and/or GaAINP); a quaternary compound (such as GaAINAs, GaAINSb, GaAIPAs, GaAIPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAINP, InAINAs, InAINSb, InAIPAs, and/or InAIPSb); and/or any combination thereof. In some embodiments, the Group III-V semiconductor compound may further include a Group II element. Non-limiting examples of the Group III-V semiconductor compound further including the II group element include InZnP, InGaZnP, InAlZnP, and/or the like.
Non-limiting examples of the Group III-VI semiconductor compound include a binary compound (such as GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2Se3, InTe, and/or the like); a ternary compound (such as InGaS3, InGaSe3, and/or the like); and any combination thereof.
Non-limiting examples of the Group semiconductor compound include a ternary compound (such as AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, AgAlO2, and/or any combination thereof).
Non-limiting examples of the Group IV-VI semiconductor compound include a binary compound (such as SnS, SnSe, SnTe, PbS, PbSe, and/or PbTe); a ternary compound (such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, and/or SnPbTe); a quaternary compound (such as SnPbSSe, SnPbSeTe, and/or SnPbSTe); and/or any combination thereof.
The Group IV element or compound may be a single element compound (such as Si and/or Ge); a binary compound (such as SiC and/or SiGe); or any combination thereof.
The individual elements included in the multi-element compound (e.g., the binary compound, the ternary compound, and/or the quaternary compound), may be present in a particle thereof at a substantially uniform or non-uniform concentration.
In some embodiments, the quantum dot may have a single (unitary) structure, in which the concentration of each element is substantially uniform throughout the quantum dot, and in some embodiments, the quantum dot may have a core-shell double structure. In some embodiments, for example, the materials (elements) included in the core may be different from the materials (elements) included in the shell.
The shell of the quantum dot may serve as a protective layer for preventing or reducing chemical denaturation of the core to maintain semiconductor characteristics and/or as a charging layer for imparting electrophoretic characteristics to the quantum dot. The shell may be monolayer or multilayer. The interface between the core and the shell may have a concentration gradient such that a concentration of elements present in the shell decreases toward the core.
Non-limiting examples of material composing the shell of the quantum dot include a metal or nonmetal oxide, a semiconductor compound, or a combination thereof. Non-limiting examples of the metal oxide or the nonmetal oxide include: a binary compound (such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, or NiO); a ternary compound (such as MgAl2O4, CoFe2O4, NiFe2O4, or CoMn2O4); and/or any combination thereof. Non-limiting examples of the semiconductor compound include a Group III-VI semiconductor compound; a Group II-VI semiconductor compound; a Group III-V semiconductor compound; a Group III-VI semiconductor compound; a Group I-III-VI semiconductor compound; a Group IV-VI semiconductor compound; and/or any combination thereof. In some embodiments, the semiconductor compound may be CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AIP, AlSb, or any combination thereof.
The quantum dot may have a an emission spectrum in which a full width at half maximum (FWHM) of an emission wavelength is about 45 nm or less, about 40 nm or less, or about 30 nm or less. When the FWHM of the quantum dot is within this range, color purity and/or color reproducibility may be improved. In addition, because light emitted through the quantum dot is emitted in all directions, an optical viewing angle may be improved.
In some embodiments, the quantum dot may be a spherical, pyramidal, multi-arm, and/or cubic nanoparticle, nanotube, nanowire, nanofiber, and/or nanoplate particle.
By adjusting the size of the quantum dot in the quantum dot emission layer, the energy band gap may also be adjusted to thereby provide light of various suitable wavelengths. By using quantum dots of various sizes, a light-emitting device capable of emitting light of various wavelengths may be realized. In some embodiments, the size of the quantum dot may be selected such that the quantum dot may be to emit red, green, and/or blue light. In some embodiments, the size of the quantum dot may be selected so that the quantum dot may be to emit white light by combining various colors of light.
The electron transport region may have i) a single-layered structure including (e.g., consisting) of a single layer including (e.g., consisting) of a single material, ii) a single-layered structure including (e.g., consisting of) a single layer including a plurality of different materials, or iii) a multi-layered structure having a plurality of layers including a plurality of different materials.
The electron transport region may include an electron transport layer. The electron transport region may further include a hole blocking layer, an electron injection layer, or any combination thereof.
The electron transport layer may be prepared by a preparation method utilizing an ink composition for a light-emitting device, wherein the ink composition may include: the phosphine oxide-based charge transport organic material; the first solvent represented by Formula 1; and the second solvent represented by Formula 2.
In some embodiments, the electron transport region may have a structure of electron transport layer/electron injection layer, or a structure of hole blocking layer/electron transport layer/electron injection layer, wherein the constituting layers of each structure are sequentially stacked over the emission layer in the stated order.
The electron transport region (e.g., a hole blocking layer and/or an electron transport layer in the electron transport region) may include a metal-free compound including at least one π electron-deficient nitrogen-containing C1-C60 cyclic group.
In some embodiments, the electron transport region may include a compound represented by Formula 601:
[Ar601]xe11−[(L601)xe1-R601]xe21, Formula 601
wherein, in Formula 601,
Ar601 and L601 may each independently be a C3-C60 carbocyclic group unsubstituted or substituted with at least one R10a or a C1-C60 heterocyclic group unsubstituted or substituted with at least one R10a,
xe11 may be 1, 2, or 3,
xe1 may be 0, 1, 2, 3, 4, or 5,
R601 may be a C3-C60 carbocyclic group unsubstituted or substituted with at least one R10a, a C1-C60 heterocyclic group unsubstituted or substituted with at least one R10a, —Si(Q601)(Q602)(Q603), —C(═O)(Q601), —S(═O)2(Q601), or —P(═O)(Q601)(Q602),
Q601 to Q603 may each independently be the same as described in connection with Q1,
xe21 may be 1, 2, 3, 4, or 5, and
at least one of Ar601, L601, or R601 may independently be a π electron-deficient nitrogen-containing C1-C60 cyclic group unsubstituted or substituted with at least one R10a.
In some embodiments, when xe11 in Formula 601 is 2 or greater, the at least two Ar601(s) may be bound via a single bond.
In some embodiments, in Formula 601, Ar601 may be a substituted or unsubstituted anthracene group.
In some embodiments, the electron transport region may include a compound represented by Formula 601-1:
wherein, in Formula 601-1,
X614 may be N or C(R614), X615 may be N or C(R615), X616 may be N or C(R616), and at least one selected from X614 to X616 may be N,
L611 to L613 may each independently be the same as described in connection with L601,
xe611 to xe613 may each independently be the same as described in connection with xe1 provided herein,
R611 to R613 may each independently be the same as described in connection with R601, and
R614 to R616 may each independently be hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, a C1-C20 alkyl group, a C1-C20 alkoxy group, a C3-C60 carbocyclic group unsubstituted or substituted with at least one R10a, or a C1-C60 heterocyclic group unsubstituted or substituted with at least one R10a.
For example, in Formulae 601 and 601-1, xe1 and xe611 to xe613 may each independently be 0, 1, or 2.
The electron transport region may include one of Compounds ET1 to ET45, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), Alq3, BAlq, TAZ, NTAZ, or any combination thereof:
The thickness of the electron transport region may be about 160 Å to about 5,000 Å, and in some embodiments, about 100 Å to about 4,000 Å. When the electron transport region includes a hole blocking layer, an electron transport layer, or any combination thereof, the thicknesses of the hole blocking layer and the electron transport layer may each independently be about 20 Å to about 1,000 Å, for example, about 30 Å to about 300 Å, and the thickness of the electron transport layer may be about 100 Å to about 1,000 Å, for example, about 150 Å to about 500 Å. When the thickness of the hole blocking layer and/or the electron transport layer is within any of these ranges, excellent electron transport characteristics may be obtained without a substantial increase in driving voltage.
The electron transport region (for example, the electron transport layer in the electron transport region) may further include, in addition to the materials described above, a metal-containing material.
The metal-containing material may include an alkali metal complex, an alkaline earth metal complex, or any combination thereof. A metal ion of the alkali metal complex may be a lithium (Li) ion, a sodium (Na) ion, a potassium (K) ion, a rubidium (Rb) ion, or a cesium (Cs) ion. A metal ion of the alkaline earth metal complex may be a beryllium (Be) ion, a magnesium (Mg) ion, a calcium (Ca) ion, a strontium (Sr) ion, or a barium (Ba) ion. For example, the metal-containing material may be a Li-based compound or a Ca-based compound. Each ligand coordinated with the metal ion of the alkali metal complex and the alkaline earth metal complex may independently be hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof.
For example, the metal-containing material may include a Li complex. The Li complex may include, e.g., Compound ET-D1 (LiQ) or Compound ET-D2:
The electron transport region may include an electron injection layer to facilitate injection of electrons from the second electrode 150. The electron injection layer may be in direct contact with the second electrode 150.
The electron injection layer may have i) a single-layered structure including (e.g., consisting of) a single layer including (e.g., consisting of) a single material, ii) a single-layered structure including (e.g., consisting of) a single layer including a plurality of different materials, or iii) a multi-layered structure having a plurality of layers including a plurality of different materials.
The electron injection layer may include an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof.
The alkali metal may be Li, Na, K, Rb, Cs or any combination thereof. The alkaline earth metal may be Mg, Ca, Sr, Ba, or any combination thereof. The rare earth metal may be Sc, Y, Ce, Tb, Yb, Gd, or any combination thereof.
The alkali metal-containing compound, the alkaline earth metal-containing compound, and the rare earth metal-containing compound may respectively be an oxide, halide (e.g., fluoride, chloride, bromide, or iodine), telluride, or any combination thereof of each of the alkali metal, the alkaline earth metal, and the rare earth metal.
The alkali metal-containing compound may be an alkali metal oxide (such as Li2O, Cs2O, and/or K2O), an alkali metal halide (such as LiF, NaF, CsF, KF, LiI, NaI, CsI, and/or KI), or any combination thereof. The alkaline earth-metal-containing compound may include an alkaline earth-metal compound, (such as BaO, SrO, CaO, BaxSr1-xO (wherein x is a real number that satisfying 0<x<1), and/or BaxCa1-xO (wherein x is a real number that satisfying 0<x<1)). The rare earth metal-containing compound may include YbF3, ScF3, Sc2O3, Y2O3, Ce2O3, GdF3, TbF3, YbI3, ScI3, TbI3, or any combination thereof. In some embodiments, the rare earth metal-containing compound may include a lanthanide metal telluride. Non-limiting examples of the lanthanide metal telluride include LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La2Te3, Ce2Te3, Pr2Te3, Nd2Te3, Pm2Te3, Sm2Te3, Eu2Te3, Gd2Te3, Tb2Te3, Dy2Te3, Ho2Te3, Er2Te3, Tm2Te3, Yb2Te3, Lu2Te3, and/or the like.
The alkali metal complex, the alkaline earth metal complex, and the rare earth metal complex may respectively include: i) an ion of the alkali metal, alkaline earth metal, and rare earth metal described above and ii) a ligand bound to the metal ion, e.g., hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxydiaphenyloxadiazole, hydroxydiphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof.
The electron injection layer may include (e.g., consist of) an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof, as described above. In some embodiments, the electron injection layer may further include an organic material (e.g., a compound represented by Formula 601).
In some embodiments, the electron injection layer may include (e.g., consist of) i) an alkali metal-containing compound (e.g., alkali metal halide), or ii) a) an alkali metal-containing compound (e.g., alkali metal halide); and b) an alkali metal, an alkaline earth metal, a rare earth metal, or any combination thereof. In some embodiments, the electron injection layer may be a KI:Yb co-deposition layer, a RbI:Yb co-deposition layer, and/or the like.
When the electron injection layer further includes an organic material, the alkali metal, the alkaline earth metal, the rare earth metal, the alkali metal-containing compound, the alkaline earth metal-containing compound, the rare earth metal-containing compound, the alkali metal complex, the alkaline earth metal complex, the rare earth metal complex, or the combination thereof may be substantially homogeneously or non-homogeneously dispersed in a matrix including the organic material.
The thickness of the electron injection layer may be about 1 Å to about 100 Å, and in some embodiments, about 3 Å to about 90 Å. When the thickness of the electron injection layer is within any of these ranges, excellent electron injection characteristics may be obtained without a substantial increase in driving voltage.
The second electrode 150 may be on the interlayer 130. In an embodiment, the second electrode 150 may be a cathode that is an electron injection electrode. In this embodiment, a material for forming the second electrode 150 may be a material having a low work function, for example, a metal, an alloy, an electrically conductive compound, or any combination thereof.
The second electrode 150 may include lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al—Li), calcium (Ca), magnesium-indium (Mg—In), magnesium-silver (Mg—Ag), ytterbium (Yb), silver-ytterbium (Ag—Yb), ITO, IZO, or any combination thereof. The second electrode 150 may be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode.
The second electrode 150 may have a single-layered structure, or a multi-layered structure including two or more layers.
A first capping layer may be located outside the first electrode 110, and/or a second capping layer may be located outside the second electrode 150. In some embodiments, the light-emitting device 10 may have a structure in which the first capping layer, the first electrode 110, the interlayer 130, and the second electrode 150 are sequentially stacked in this stated order, a structure in which the first electrode 110, the interlayer 130, the second electrode 150, and the second capping layer are sequentially stacked in this stated order, or a structure in which the first capping layer, the first electrode 110, the interlayer 130, the second electrode 150, and the second capping layer are sequentially stacked in this stated order.
In the light-emitting device 10, light emitted from the emission layer in the interlayer 130 may pass through the first electrode 110 (which may be a semi-transmissive electrode or a transmissive electrode) and through the first capping layer to the outside. In the light-emitting device 10, light emitted from the emission layer in the interlayer 130 may pass through the second electrode 150 (which may be a semi-transmissive electrode or a transmissive electrode) and through the second capping layer to the outside.
The first capping layer and the second capping layer may improve the external luminescence efficiency of the device based on the principle of constructive interference. Accordingly, the optical extraction efficiency of the light-emitting device 10 may be increased, thus improving the luminescence efficiency of the light-emitting device 10.
The first capping layer and the second capping layer may each include a material having a refractive index of 1.6 or higher (at 589 nm).
The first capping layer and the second capping layer may each independently be a capping layer including an organic material, an inorganic capping layer including an inorganic material, or a composite capping layer including an organic material and an inorganic material.
At least one of the first capping layer or the second capping layer may each independently include a carbocyclic compound, a heterocyclic compound, an amine group-containing compound, a porphyrin derivative, a phthalocyanine derivative, a naphthalocyanine derivative, an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The carbocyclic compound, the heterocyclic compound, and the amine group-containing compound may optionally be substituted with a substituent including O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof. In some embodiments, at least one of the first capping layer or the second capping layer may each independently include an amine group-containing compound.
In some embodiments, at least one of the first capping layer or the second capping layer may each independently include the compound represented by Formula 201, the compound represented by Formula 202, or any combination thereof.
In one or more embodiments, at least one of the first capping layer or the second capping layer may each independently include one of Compounds HT28 to HT33, one of Compounds CP1 to CP6, β-NPB, or any combination thereof:
The light-emitting device may be included in various suitable electronic apparatuses. In some embodiments, an electronic apparatus including the light-emitting device may be an emission apparatus or an authentication apparatus.
The electronic apparatus (e.g., an emission apparatus) may further include, in addition to the light-emitting device, i) a color filter, ii) a color-conversion layer, or iii) a color filter and a color-conversion layer. The color filter and/or the color-conversion layer may be disposed along at least one traveling direction of light emitted from the light-emitting device. In some embodiments, light emitted from the light-emitting device may be blue light. The light-emitting device may be understood by referring to the descriptions provided herein. In some embodiments, the color-conversion layer may include quantum dots. The quantum dot may be, for example, the quantum dot described herein.
The electronic apparatus may include a first substrate. The first substrate may include a plurality of sub-pixel areas, the color filter may include a plurality of color filter areas respectively corresponding to the plurality of sub-pixel areas, and the color-conversion layer may include a plurality of color-conversion areas respectively corresponding to the plurality of sub-pixel areas.
A pixel defining film may be located between adjacent ones of the plurality of sub-pixel areas to define each sub-pixel area.
The color filter may further include a plurality of color filter areas and light-blocking patterns between adjacent ones of the plurality of color filter areas, and the color-conversion layer may further include a plurality of color-conversion areas and light-blocking patterns between adjacent ones of the plurality of color-conversion areas.
The plurality of color filter areas (or plurality of color-conversion areas) may include: a first area to emit first color light; a second area to emit second color light; and/or a third area to emit third color light, and the first color light, the second color light, and/or the third color light may have different maximum emission wavelengths. In some embodiments, the first color light may be red light, the second color light may be green light, and the third color light may be blue light. In some embodiments, the plurality of color filter areas (or the plurality of color-conversion areas) may each include quantum dots. In some embodiments, the first area may include red quantum dots, the second area may include green quantum dots, and the third area may not include a quantum dot. The quantum dot may be understood by referring to the description of the quantum dot provided herein. The first area, the second area, and/or the third area may each further include an emitter.
In some embodiments, the light-emitting device may be to emit first light, the first area may be to absorb the first light to emit a 1-1 color light, the second area may be to absorb the first light to emit a 2-1 color light, and the third area may be to absorb the first light to emit a 3-1 color light. In this embodiment, the 1-1 color light, the 2-1 color light, and the 3-1 color light may each have a different maximum emission wavelength. In some embodiments, the first light may be blue light, the 1-1 color light may be red light, the 2-1 color light may be green light, and the 3-1 light may be blue light.
The electronic apparatus may further include a thin-film transistor, in addition to the light-emitting device. The thin-film transistor may include a source electrode, a drain electrode, and an activation layer, wherein one of the source electrode or the drain electrode may be electrically connected to one of the first electrode or the second electrode of the light-emitting device.
The thin-film transistor may further include a gate electrode, a gate insulating film, and/or the like.
The activation layer may include a crystalline silicon, an amorphous silicon, an organic semiconductor, and an oxide semiconductor.
The electronic apparatus may further include an encapsulation unit for sealing the light-emitting device. The encapsulation unit may be located between the color filter and/or the color-conversion layer and the light-emitting device. The encapsulation unit may allow light to pass to the outside from the light-emitting device, and may simultaneously prevent or reduce permeation of air and moisture into the light-emitting device. The encapsulation unit may be a sealing substrate including a transparent glass or plastic substrate. The encapsulation unit may be a thin-film encapsulating layer including one or more organic layer(s) and/or inorganic layer(s). When the encapsulation unit is a thin film encapsulating layer, the electronic apparatus may be flexible.
In addition to the color filter and/or the color-conversion layer, various suitable functional layers may be disposed on the encapsulation unit depending on the use of an electronic apparatus. Non-limiting examples of the functional layer include a touch screen layer, a polarization layer, and/or the like. The touch screen layer may be a resistive touch screen layer, a capacitive touch screen layer, or an infrared beam touch screen layer. The authentication apparatus may be, for example, a biometric authentication apparatus that identifies an individual according biometric information (e.g., a fingertip, a pupil, and/or the like).
The authentication apparatus may further include a biometric information collecting unit, in addition to the light-emitting device described above.
The electronic apparatus may be applicable to various displays, an optical source, lighting, a personal computer (e.g., a mobile personal computer), a cellphone, a digital camera, an electronic note, an electronic dictionary, an electronic game console, a medical device (e.g., an electronic thermometer, a blood pressure meter, a glucometer, a pulse measuring device, a pulse wave measuring device, an electrocardiograph recorder, an ultrasonic diagnosis device, an endoscope display device), a fish finder, various suitable measurement device(s), gauge(s) (e.g., gauge(s) of an automobile, an airplane, a ship), a projector, and/or the like.
An emission apparatus in
The substrate 100 may be a flexible substrate, a glass substrate, or a metal substrate. A buffer layer 210 may be on the substrate 100. The buffer layer 210 may prevent or reduce penetration of impurities through the substrate 100 and provide a flat surface on the substrate 100.
A thin-film transistor may be on the buffer layer 210. The thin-film transistor may include an active layer 220, a gate electrode 240, a source electrode 260, and a drain electrode 270.
The active layer 220 may include an inorganic semiconductor (such as silicon and/or polysilicon), an organic semiconductor, or an oxide semiconductor, and includes a source area, a drain area, and a channel area.
A gate insulating film 230 for insulating the active layer 220 and the gate electrode 240 may be on the active layer 220, and the gate electrode 240 may be on the gate insulating film 230.
An interlayer insulating film 250 may be on the gate electrode 240. The interlayer insulating film 250 may be between the gate electrode 240 and the source electrode 260 and between the gate electrode 240 and the drain electrode 270 to provide insulation therebetween.
The source electrode 260 and the drain electrode 270 may be on the interlayer insulating film 250. The interlayer insulating film 250 and the gate insulating film 230 may be formed to expose the source area and the drain area of the active layer 220, and the source electrode 260 and the drain electrode 270 may be adjacent to the exposed source area and the exposed drain area of the active layer 220.
The thin-film transistor may be electrically connected to a light-emitting device to drive the light-emitting device and may be protected by a passivation layer 280. The passivation layer 280 may include an inorganic insulating film, an organic insulating film, or a combination thereof. A light-emitting device may be on the passivation layer 280. The light-emitting device may include a first electrode 110, an interlayer 130, and a second electrode 150.
The first electrode 110 may be on the passivation layer 280. The passivation layer 280 may not fully cover the drain electrode 270 and may expose a specific (set or predetermined) area of the drain electrode 270, and the first electrode 110 may be disposed to connect to the exposed drain electrode 270.
A pixel-defining film 290 may be on the first electrode 110. The pixel-defining film 290 may expose a specific (set or predetermined) area of the first electrode 110, and the interlayer 130 may be formed in the exposed area. The pixel-defining film 290 may be a polyimide or polyacryl organic film. In some embodiments, some higher layers of the interlayer 130 may extend to the upper portion of the pixel-defining film 290 and may be disposed in the form of a common layer.
The second electrode 150 may be on the interlayer 130, and a capping layer 170 may be additionally formed on the second electrode 150. The capping layer 170 may be formed to cover the second electrode 150.
The encapsulation unit 300 may be on the capping layer 170. The encapsulation unit 300 may be on the light-emitting device to protect a light-emitting device from moisture or oxygen. The encapsulation unit 300 may include: an inorganic film including silicon nitride (SiNx), silicon oxide (SiOx), indium tin oxide (ITO), indium zinc oxide (IZO), or any combination thereof; an organic film including polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxy methylene, poly arylate, hexamethyl disiloxane, an acrylic resin (e.g., polymethyl methacrylate, polyacrylic acid, and/or the like), an epoxy resin (e.g., aliphatic glycidyl ether (AGE) and/or the like), or any combination thereof; or a combination of the inorganic film and the organic film.
The emission apparatus shown in
The layers constituting the hole transport region, the emission layer, and the layers constituting the electron transport region may be formed in a specific (set or predetermined) region using one or more suitable methods (such as vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) deposition, ink-jet printing, laser printing, and/or laser-induced thermal imaging).
When the layers constituting the hole transport region, the emission layer, and the layers constituting the electron transport region are each formed by spin coating, the spin coating may be performed at a coating rate of about 2,000 revolutions per minute (rpm) to about 5,000 rpm, and at a heat treatment temperature of about 80° C. to about 200° C., depending on the material to be included in each layer and the structure of each layer to be formed.
The term “C3-C60 carbocyclic group” as used herein refers to a cyclic group consisting of 3 to 60 carbon atoms only. The term “C1-C60 heterocyclic group” as used herein refers to a cyclic group having 1 to 60 carbon atoms in addition to a heteroatom. For example, the number of ring-forming atoms in the C1-C60 heterocyclic group may be in a range of 3 to 61. The C3-C60 carbocyclic group and the C1-C60 heterocyclic group may each be a monocyclic group consisting of one ring, or a polycyclic group in which at least two rings are condensed.
The term “cyclic group” as used herein may include the C3-C60 carbocyclic group and the C1-C60 heterocyclic group.
The term “T1 electron-rich C3-C60 cyclic group” refers to a cyclic group having 3 to 60 carbon atoms and not including *—N═*′ as a ring-forming moiety. The term “π electron-deficient nitrogen-containing C1-C60 cyclic group” as used herein refers to a heterocyclic group having 1 to 60 carbon atoms and *—N═*′ as a ring-forming moiety.
In some embodiments, the C3-C60 carbocyclic group may be i) a T1 group (as defined below) or ii) a group in which at least two T1 groups are condensed (for example, a cyclopentadiene group, an adamantane group, a norbornane group, a benzene group, a pentalene group, a naphthalene group, an azulene group, an indacene group, an acenaphthylene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a perylene group, a pentaphene group, a heptalene group, a naphthacene group, a picene group, a hexacene group, a pentacene group, a rubicene group, a coronene group, an ovalene group, an indene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, an indenophenanthrene group, or an indenoanthracene group),
the C1-C60 heterocyclic group may be i) a T2 group (as defined below), ii) a group in which at least two T2 groups are condensed, or iii) a group in which at least one T2 group is condensed with at least one T1 group (for example, a pyrrole group, a thiophene group, a furan group, an indole group, a benzoindole group, a naphthoindole group, an isoindole group, a benzoisoindole group, a naphthoisoindole group, a benzosilole group, a benzothiophene group, a benzofuran group, a carbazole group, a dibenzosilole group, a dibenzothiophene group, a dibenzofuran group, an indenocarbazole group, an indolocarbazole group, a benzofurocarbazole group, a benzothienocarbazole group, a benzosilolocarbazole group, a benzoindolocarbazole group, a benzocarbazole group, a benzonaphthofuran group, a benzonapthothiophene group, a benzonaphthosilole group, a benzofurodibenzofuran group, a benzofurodibenzothiophene group, a benzothienodibenzothiophene group, a pyrazole group, an imidazole group, a triazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, a benzopyrazole group, a benzimidazole group, a benzoxazole group, a benzoisoxazole group, a benzothiazole group, a benzoisothiazole group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, a quinoline group, an isoquinoline group, a benzoquinoline group, a benzoisoquinoline group, a quinoxaline group, a benzoquinoxaline group, a quinazoline group, a benzoquinazoline group, a phenanthroline group, a cinnoline group, a phthalazine group, a naphthyridine group, an imidazopyridine group, an imidazopyrimidine group, an imidazotriazine group, an imidazopyrazine group, an imidazopyridazine group, an azacarbazole group, an azafluorene group, an azadibenzosilole group, an azadibenzothiophene group, an azadibenzofuran group, and/or the like),
the π electron-rich C3-C60 cyclic group may be i) a T1 group, ii) a condensed group in which at least two T1 groups are condensed, iii) a T3 group (as defined below), iv) a condensed group in which at least two T3 groups are condensed, or v) a condensed group in which at least one T3 group is condensed with at least one T1 group (for example, a C3-C60 carbocyclic group, a pyrrole group, a thiophene group, a furan group, an indole group, a benzoindole group, a naphthoindole group, an isoindole group, a benzoisoindole group, a naphthoisoindole group, a benzosilole group, a benzothiophene group, a benzofuran group, a carbazole group, a dibenzosilole group, a dibenzothiophene group, a dibenzofuran group, an indenocarbazole group, an indolocarbazole group, a benzofurocarbazole group, a benzothienocarbazole group, a benzosilolocarbazole group, a benzoindolocarbazole group, a benzocarbazole group, a benzonaphthofuran group, a benzonapthothiophene group, a benzonaphthosilole group, a benzofurodibenzofuran group, a benzofurodibenzothiophene group, a benzothienodibenzothiophene group, and/or the like), and
the π electron-deficient nitrogen-containing C1-C60 cyclic group may be i) a T4 group (as defined below), ii) a group in which at least twos T4 groups are condensed, iii) a group in which at least one T4 group is condensed with at least one T1 group, iv) a group in which at least one T4 group is condensed with at least one T3 group, or v) a group in which at least one T4 group, at least one T1 group, and at least one T3 group are condensed (for example, a pyrazole group, an imidazole group, a triazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, a benzopyrazole group, a benzimidazole group, a benzoxazole group, a benzoisoxazole group, a benzothiazole group, a benzoisothiazole group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, a quinoline group, an isoquinoline group, a benzoquinoline group, a benzoisoquinoline group, a quinoxaline group, a benzoquinoxaline group, a quinazoline group, a benzoquinazoline group, a phenanthroline group, a cinnoline group, a phthalazine group, a naphthyridine group, an imidazopyridine group, an imidazopyrimidine group, an imidazotriazine group, an imidazopyrazine group, an imidazopyridazine group, an azacarbazole group, an azafluorene group, an azadibenzosilole group, an azadibenzothiophene group, an azadibenzofuran group, and/or the like),
wherein the T1 group may be a cyclopropane group, a cyclobutane group, a cyclopentane group, a cyclohexane group, a cycloheptane group, a cyclooctane group, a cyclobutene group, a cyclopentene group, a cyclopentadiene group, a cyclohexene group, a cyclohexadiene group, a cycloheptene group, an adamantane group, a norbornane (or bicyclo[2.2.1]heptane) group, a norbornene group, a bicyclo[1.1.1]pentane group, a bicyclo[2.1.1]hexane group, a bicyclo[2.2.2]octane group, or a benzene group,
the T2 group may be a furan group, a thiophene group, a 1H-pyrrole group, a silole group, a borole group, a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazole group, a triazole group, a tetrazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, an azasilole group, an azaborole group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, or a tetrazine group,
the T3 group may be a furan group, a thiophene group, a 1H-pyrrole group, a silole group, or a borole group, and
the T4 group may be a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazole group, a triazole group, a tetrazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, an azasilole group, an azaborole group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, or a tetrazine group.
Terms used herein such as “cyclic group”, “C3-C60 carbocyclic group”, “C1-C60 heterocyclic group”, “T1 electron-rich C3-C60 cyclic group”, or “T1 electron-deficient nitrogen-containing C1-C60 cyclic group” may each independently refer to a group condensed with any suitable cyclic group, a monovalent group, or a polyvalent group (e.g., a divalent group, a trivalent group, a quadvalent group, or the like), according to the structure of the formula to which the term is applied. For example, a “benzene group” may be (refer to) a benzene, a phenyl group, a phenylene group, and/or the like, which may be understood by one of ordinary skill in the art, according to the structure of the formula including the “benzene group”.
Non-limiting examples of the monovalent C3-C60 carbocyclic group and the monovalent C1-C60 heterocyclic group may include a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and/or a monovalent non-aromatic condensed heteropolycyclic group. Non-limiting examples of the divalent C3-C60 carbocyclic group and the monovalent C1-C60 heterocyclic group may include a C3-C10 cycloalkylene group, a C1-C10 heterocycloalkylene group, a C3-C10 cycloalkenylene group, a C1-C10 heterocycloalkenylene group, a C6-C60 arylene group, a C1-C60 heteroarylene group, a divalent non-aromatic condensed polycyclic group, and/or a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group.
The term “C1-C60 alkyl group” as used herein refers to a linear or branched aliphatic hydrocarbon monovalent group having 1 to 60 carbon atoms, and non-limiting examples thereof include a methyl group, an ethyl group, an n-propyl group, an iso-propyl group, an n-butyl group, a sec-butyl group, an isobutyl group, a tert-butyl group, an n-pentyl group, a tert-pentyl group, a neopentyl group, an isopentyl group, a sec-pentyl group, a 3-pentyl group, a sec-isopentyl group, an n-hexyl group, an iso-hexyl group, a sec-hexyl group, a tert-hexyl group, an n-heptyl group, an iso-heptyl group, a sec-heptyl group, a tert-heptyl group, an n-octyl group, an iso-octyl group, a sec-octyl group, a tert-octyl group, an n-nonyl group, an iso-nonyl group, a sec-nonyl group, a tert-nonyl group, an n-decyl group, an iso-decyl group, a sec-decyl group, and/or a tert-decyl group. The term “C1-C60 alkylene group” as used herein refers to a divalent group having substantially the same structure as the C1-C60 alkyl group.
The term “C2-C60 alkenyl group” as used herein refers to a hydrocarbon group having at least one carbon-carbon double bond in the middle or at the terminus of the C2-C60 alkyl group. Non-limiting examples thereof include an ethenyl group, a propenyl group, and/or a butenyl group. The term “C2-C60 alkenylene group” as used herein refers to a divalent group having substantially the same structure as the C2-C60 alkenyl group.
The term “C2-C60 alkynyl group” as used herein refers to a monovalent hydrocarbon group having at least one carbon-carbon triple bond in the middle or at the terminus of the C2-C60 alkyl group. Non-limiting examples thereof include an ethynyl group and/or a propynyl group. The term “C2-C60 alkynylene group” as used herein refers to a divalent group having substantially the same structure as the C2-C60 alkynyl group.
The term “C1-C60 alkoxy group” as used herein refers to a monovalent group represented by —OA101 (wherein A101 is a C1-C60 alkyl group). Non-limiting examples thereof include a methoxy group, an ethoxy group, and/or an isopropyloxy group.
The term “C3-C10 cycloalkyl group” as used herein refers to a monovalent saturated hydrocarbon monocyclic group including 3 to 10 carbon atoms. Non-limiting examples of the C3-C10 cycloalkyl group as used herein include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, an adamantanyl group, a norbornanyl (bicyclo[2.2.1]heptyl) group, a bicyclo[1.1.1]pentyl group, a bicyclo[2.1.1]hexyl group, and/or a bicyclo[2.2.2]octyl group. The term “C3-C10 cycloalkylene group” as used herein refers to a divalent group having substantially the same structure as the C3-C10 cycloalkyl group.
The term “C1-C10 heterocycloalkyl group” as used herein refers to a monovalent cyclic group including at least one heteroatom other than carbon atoms as a ring-forming atom and having 1 to 10 carbon atoms. Non-limiting examples thereof include a 1,2,3,4-oxatriazolidinyl group, a tetrahydrofuranyl group, and/or a tetrahydrothiophenyl group. The term “C1-C10 heterocycloalkylene group” as used herein refers to a divalent group having substantially the same structure as the C1-C10 heterocycloalkyl group.
The term “C3-C10 cycloalkenyl group” as used herein refers to a monovalent cyclic group that has 3 to 10 carbon atoms and at least one carbon-carbon double bond in its ring, and is not aromatic. Non-limiting examples thereof include a cyclopentenyl group, a cyclohexenyl group, and/or a cycloheptenyl group. The term “C3-C10 cycloalkenylene group” as used herein refers to a divalent group having substantially the same structure as the C3-C10 cycloalkenyl group.
The term “C1-C10 heterocycloalkenyl group” as used herein refers to a monovalent cyclic group including at least one heteroatom other than carbon atoms as a ring-forming atom, 1 to 10 carbon atoms, and at least one double bond in its ring. Non-limiting examples of the C1-C10 heterocycloalkenyl group include a 4,5-dihydro-1,2,3,4-oxatriazolyl group, a 2,3-dihydrofuranyl group, and/or a 2,3-dihydrothiophenyl group. The term “C1-C10 heterocycloalkylene group” as used herein refers to a divalent group having substantially the same structure as the C1-C10 heterocycloalkyl group.
The term “C6-C60 aryl group” as used herein refers to a monovalent group having a carbocyclic aromatic system having 6 to 60 carbon atoms. The term “C6-C60 arylene group” as used herein refers to a divalent group having a carbocyclic aromatic system having 6 to 60 carbon atoms. Non-limiting examples of the C6-C60 aryl group include a phenyl group, a pentalenyl group, a naphthyl group, an azulenyl group, an indacenyl group, an acenaphthyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a heptalenyl group, a naphthacenyl group, a picenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, and/or an ovalenyl group. When the C6-C60 aryl group and the C6-C60 arylene group each independently include two or more rings, the respective rings may be fused.
The term “C1-C60 heteroaryl group” as used herein refers to a monovalent group having a heterocyclic aromatic system further including at least one heteroatom other than carbon atoms as a ring-forming atom and 1 to 60 carbon atoms. The term “C1-C60 heteroarylene group” as used herein refers to a divalent group having a heterocyclic aromatic system further including at least one heteroatom other than carbon atoms as a ring-forming atom and 1 to 60 carbon atoms. Non-limiting examples of the C1-C60 heteroaryl group include a pyridinyl group, a pyrimidinyl group, a pyrazinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, a benzoquinolinyl group, an isoquinolinyl group, a benzoisoquinolinyl group, a quinoxalinyl group, a benzoquinoxalinyl group, a quinazolinyl group, a benzoquinazolinyl group, a cinnolinyl group, a phenanthrolinyl group, a phthalazinyl group, and/or a naphthyridinyl group. When the C1-C60 heteroaryl group and the C1-C60 heteroarylene group each independently include two or more rings, the respective rings may be fused.
The term “monovalent non-aromatic condensed polycyclic group” as used herein refers to a monovalent group that has two or more rings condensed and only carbon atoms as ring forming atoms (e.g., 8 to 60 carbon atoms), wherein the entire molecular structure is non-aromatic (e.g., the structure when considered as a whole is non-aromatic). Non-limiting examples of the monovalent non-aromatic condensed polycyclic group include an indenyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, an indenophenanthrenyl group, and/or an indenoanthracenyl group. The term “divalent non-aromatic condensed polycyclic group” as used herein refers to a divalent group having substantially the same structure as the monovalent non-aromatic condensed polycyclic group.
The term “monovalent non-aromatic condensed heteropolycyclic group” as used herein refers to a monovalent group that has two or more condensed rings and at least one heteroatom other than carbon atoms (e.g., 1 to 60 carbon atoms), as a ring-forming atom, wherein the entire molecular structure is non-aromatic (e.g., the structure when considered as a whole is non-aromatic). Non-limiting examples of the monovalent non-aromatic condensed heteropolycyclic group include a pyrrolyl group, a thiophenyl group, a furanyl group, an indolyl group, a benzoindolyl group, a naphthoindolyl group, an isoindolyl group, a benzoisoindolyl group, a naphthoisoindolyl group, a benzosilolyl group, a benzothiophenyl group, a benzofuranyl group, a carbazolyl group, a dibenzosilolyl group, a dibenzothiophenyl group, a dibenzofuranyl group, an azacarbazolyl group, an azafluorenyl group, an azadibenzosilolyl group, an azadibenzothiophenyl group, an azadibenzofuranyl group, a pyrazolyl group, an imidazolyl group, a triazolyl group, a tetrazolyl group, an oxazolyl group, an isoxazolyl group, a thiazolyl group, an isothiazolyl group, an oxadiazolyl group, a thiadiazolyl group, a benzopyrazolyl group, a benzimidazolyl group, a benzoxazolyl group, a benzothiazolyl group, a benzooxadiazolyl group, a benzothiadiazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, an imidazotriazinyl group, an imidazopyrazinyl group, an imidazopyridazinyl group, an indenocarbazolyl group, an indolocarbazolyl group, a benzofurocarbazolyl group, a benzothienocarbazolyl group, a benzosilolocarbazolyl group, a benzoindolocarbazolyl group, a benzocarbazolyl group, a benzonaphthofuranyl group, a benzonaphthothiophenyl group, a benzonaphthosilolyl group, a benzofurodibenzofuranyl group, a benzofurodibenzothiophenyl group, and/or a benzothienodibenzothiophenyl group. The term “divalent non-aromatic condensed heteropolycyclic group” as used herein refers to a divalent group having substantially the same structure as the monovalent non-aromatic condensed heteropolycyclic group.
The term “C6-C60 aryloxy group” as used herein is represented by —OA102 (wherein A102 is a C6-C60 aryl group). The term “C6-C60 arylthio group” as used herein is represented by —SA103 (wherein A103 is a C6-C60 aryl group).
The term “R10a” as used herein may be:
deuterium (-D), —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, or a nitro group;
a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, or a C1-C60 alkoxy group, each unsubstituted or substituted with deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, a C3-C60 carbocyclic group, a C1-C60 heterocyclic group, a C6-C60 aryloxy group, a C6-C60 arylthio group, —Si(Q11)(Q12)(Q13), —N(Q11)(Q12), —B(Q11)(Q12), —C(═O)(Q11), —S(═O)2(Q11), —P(═O)(Q11)(Q12), or any combination thereof;
a C3-C60 carbocyclic group, a C1-C60 heterocyclic group, a C6-C60 aryloxy group, or a C6-C60 arylthio group, each unsubstituted or substituted with deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, a C1-C60 alkoxy group, a C3-C60 carbocyclic group, a C1-C60 heterocyclic group, a C6-C60 aryloxy group, a C6-C60 arylthio group, —Si(Q21)(Q22)(Q23), —N(Q21)(Q22), —B(Q21)(Q22), —C(═O)(Q21), —S(═O)2(Q21), —P(═O)(Q21)(Q22), or any combination thereof; or
—Si(Q31)(Q32)(Q33), —N(Q31)(Q32), —B(Q31)(Q32), —C(═O)(Q31), —S(═O)2(Q31), or —P(═O)(Q31)(Q32).
Q1 to Q3, Q11 to Q13, Q21 to Q23, and Q31 to Q33 may each independently be hydrogen; deuterium; —F; —Cl; —Br; —I; a hydroxyl group; a cyano group; a nitro group; a C1-C60 alkyl group; a C2-C60 alkenyl group; a C2-C60 alkynyl group; a C1-C60 alkoxy group; or a C3-C60 carbocyclic group or a C1-C60 heterocyclic group, each unsubstituted or substituted with deuterium, —F, a cyano group, a C1-C60 alkyl group, a C1-C60 alkoxy group, a phenyl group, a biphenyl group, or any combination thereof.
The term “heteroatom” as used herein refers to any atom other than a carbon atom or a hydrogen atom. Non-limiting examples of the heteroatom include O, S, N, P, Si, B, Ge, Se, or any combination thereof.
The term “Ph” used herein represents a phenyl group, the term “Me” used herein represents a methyl group, the term “Et” used herein represents an ethyl group, the terms “ter-Bu” or “But” used herein represent a tert-butyl group, and the term “OMe” used herein represents a methoxy group.
The term “biphenyl group” as used herein refers to a phenyl group substituted with at least one phenyl group. For example, a “biphenyl group” is “a substituted phenyl group” having a “C6-C60 aryl group” as a substituent.
The term “terphenyl group” as used herein refers to a phenyl group substituted with at least one phenyl group. For example, a “terphenyl group” belongs to “a substituted phenyl group” having a “C6-C60 aryl group substituted with a C6-C60 aryl group” as a substituent.
The symbols * and *′ as used herein, unless defined otherwise, refer to a binding site to an adjacent atom in a corresponding formula.
Hereinafter, a light-emitting device and a compound according to one or more embodiments will be described in more detail with reference to the Examples.
The Hansen parameter values of each of Compounds 1 to 4 as a first solvent, Compounds 51 to 54 as a second solvent, various mixed solvents of a first solvent compound and a second solvent compound, and a phosphine oxide-based charge transporting organic material are shown in Table 1.
A boiling point, a viscosity, and a surface tension value of each of Compounds 1 to 4 as a first solvent, and Compounds 51 to 54 as a second solvent are shown in Table 2.
Various ink compositions for an electron transport layer were prepared according to the compositions shown in Table 3.
1)percent by weight of a solute based on 100 parts of the total ink composition
2)Weight ratio
Various ink compositions for an emission layer were prepared according to the compositions shown in Table 4.
3)percent by weight of a solute based on 100 parts of the total ink composition
The following procedure was used to evaluate the extent of damage on the under layer onto which an ink composition for a light-emitting device is coated.
1) Glass substrate: Prepare a substrate for preparing a single emission layer
2) Emission layer coating: Perform spin coating on the glass substrate so that the ink is deposited at a suitable thickness (with deviation <±3%), and bake for 10 minutes at a temperature of 140° C.
3) Determination of initial UV absorption rate of an emission layer: Coat 10 or more layers and measure the UV absorption spectrum of the central portion of a single emission layer, based on 100 units of the λmax UV absorption rate (initial absorption rate)
4) Solvent drop: Drop 50 milligrams (mg) of a mixed solvent of the first solvent and the second solvent on the central portion of the single emission layer utilizing a syringe
5) Rest: Allow the mixed solvent drop to rest on the single emission layer, without moving or flowing, in a hood for 30 minutes
6) Removal of the mixed solvent: Remove the mixed solvent utilizing a PET microfiber wipe having a diameter of 20 micrometers (μm) or less for 10 seconds
7) Baking: Bake at a hot plate with an actual temperature of 110° C. for 15 minutes
8) Final UV absorption rate measurement: Measure the final λmax UV absorption rate as a percentage (%) of the initial absorption rate, based on 100 of the initial UV absorption rate (e.g in a case where the initial absorption rate is 10, and the absorption rate is 9 after the treatment, the UV absorption rate is 90%)
B EML-1 was spin-coated on a glass substrate (50 millimeters (mm)×50 mm) to form a film having a thickness of 100 nanometers (nm) to evaluate the degree of damage on the under layer according to the under layer damage evaluation method. The mixed solvent included Compound 1 and Compound 52 at a volumetric ratio of 8:2.
The evaluation was performed in substantially the same manner as in Example 1-1, except that G EML-1 was used instead of B EML-1.
The evaluation was performed in substantially the same manner as in Example 1-1, except that R EML-1 was used instead of B EML-1.
The evaluation was performed in substantially the same manner as in Example 1-1, except that the mixed solvent of Compound 4 and Compound 51 (at a volumetric ratio of 8:2) was used instead of the mixed solvent of Compound 1 and Compound 52 (at a volumetric ratio of 8:2).
The evaluation was performed in substantially the same manner as in Example 1-4, except that G EML-1 was used instead of B EML-1.
The evaluation was performed in substantially the same manner as in Example 1-4, except that R EML-1 was used instead of B EML-1.
The evaluation was performed in substantially the same manner as in Example 1-1, except that B EML-2 was used instead of B EML-1.
The evaluation was performed in substantially the same manner as in Example 1-1, except that G EML-2 was used instead of B EML-1.
The evaluation was performed in substantially the same manner as in Example 1-1, except that R EML-2 was used instead of B EML-1.
The evaluation was performed in substantially the same manner as in Example 1-1, except that the mixed solvent of Compound 1 and Compound 51 (at a volumetric ratio of 8:2) was used instead of the mixed solvent of Compound 1 and Compound 52 (at a volumetric ratio of 8:2).
The evaluation was performed in substantially the same manner as in Example 1-2, except that the mixed solvent of Compound 1 and Compound 51 (at a volumetric ratio of 8:2) was used instead of the mixed solvent of Compound 1 and
Compound 52 (at a volumetric ratio of 8:2).
The evaluation was performed in substantially the same manner as in Example 1-3, except that the mixed solvent of Compound 1 and Compound 51 (at a volumetric ratio of 8:2) was used instead of the mixed solvent of Compound 1 and Compound 52 (at a volumetric ratio of 8:2).
The evaluation was performed in substantially the same manner as in Example 1-1, except that a single solvent, triethylene glycol monobutyl ether (TEGBE), was used instead of the mixed solvent of Compound 1 and Compound 52 (at a volumetric ratio of 8:2).
The measurement results of differences in absorption rates are shown in Table 5.
When the difference in the absorption rate is small, the damage of the under layer may be great.
In Comparative Examples 1-1 to 1-3, compounds having a molecular weight less than 640 were present in the emission layer, and damage was caused by the solvent.
In Comparative Examples 1˜4 to 1-6, the difference in boiling points between the first solvent and the second solvent in the mixed solvent is greater than 10° C., and in this case, the damage is greater than the damages in the Examples in which the difference in boiling points between the first solvent and the second solvent in the mixed solvent is 10° C. or lower.
In Comparative Example 1-7, a single solvent was used, and in this case, the damage was greater than the damages in the Examples in which the mixed solvent of the first solvent and the second solvent was used.
An ITO glass substrate (50 mm×50 mm and 15 Ohms per square centimeter (Ω/cm2)) as an OLED glass (available from Samsung-Corning) substrate was sequentially sonicated using distilled water and isopropyl alcohol, and cleaned by exposure to ultraviolet rays with ozone for 30 minutes.
After the washing, PEDOT:PSS were spin-coated on the transparent electrode line-attached glass substrate to form a film having a thickness of 60 nm, followed by baking at a temperature of 200° C. for 30 minutes, to form a hole injection layer.
TFB was spin-coated on the hole injection layer to form a film having a thickness of 20 nm, followed by baking at a temperature of 240° C. for 10 minutes, to form a hole transport layer.
The B EML-1 ink composition was spin-coated on the hole transport layer to form a film having a thickness of 30 nm, followed by baking at a temperature of 140° C. for 10 minutes, to form an emission layer.
The ETL-1 ink composition was spin-coated on the emission layer to form an electron transport layer having a thickness of 20 nm.
Thereafter, aluminum (Al) was deposited on the electron transport layer to form a cathode having a thickness of about 100 nm, thereby completing the manufacture of an organic light-emitting device.
Deposition equipment (Sunicel plus 200) manufactured by Sunic System Co., Ltd. was used for the deposition.
Additional light-emitting devices were manufactured in substantially the same manner as in Example 2-1, except that the ink compositions shown in Table 6 were respectively used in formation of the emission layer and the electron transport layer.
Additional light-emitting devices were manufactured in substantially the same manner as in Example 2-1, except that the ink compositions shown in Table 6 were respectively used in formation of the emission layer and the electron transport layer.
The driving voltages, efficiencies, and color-coordinates of the organic light-emitting devices manufactured in Examples 2-1 to 2-21 and Comparative Examples 2-1 to 2-7 were evaluated as follows. The results thereof are shown in Table 7.
The color-coordinate was measured using a luminance meter PR650 powered by a current voltmeter (Keithley SMU 236).
The luminance was measured using a luminance meter PR650 powered by a current voltmeter (Keithley SMU 236).
The efficiency was measured using a luminance meter PR650 powered by a current voltmeter (Keithley SMU 236).
The T95 lifespan indicates a time (hour) for the luminance of the organic light-emitting device to decline to 95% of its initial luminance (at 10 mA/cm2).
As shown in Table 7, as compared with the light-emitting devices according to Comparative Examples 2-1 and 2-4, the light-emitting devices according to Examples 2-1 to 2-7 were found to exhibit desired (excellent) efficiency and lifespan. As compared with the light-emitting devices according to Comparative Examples 2-2 and 2-5, the light-emitting devices according to Examples 2-8 to 2-14 were found to exhibit desired (excellent) efficiency and lifespan. As compared with the light-emitting devices according to Comparative Examples 2-3 and 2-6, the light-emitting devices according to Examples 2-15 to 2-21 were found to exhibit desired (excellent) efficiency and lifespan. As compared with the light-emitting device according to Example 2-1, the light-emitting device according to Comparative Example 2-7, in which a single solvent was used, was found to have a low efficiency and lifespan.
When the ink composition according to one or more embodiments is used in a solution process, a two layer stacked structure may be obtained by applying one kind of ink composition and baking the composition.
In addition, another ink composition may be stacked on the top by imparting solvent selectivity to thereby realize an organic light-emitting device having high efficiency and/or long lifespan characteristics. Thus, based on such features, the ink composition may be helpfully used in a full-color display.
As apparent from the foregoing description, all organic layers between a first electrode and a second electrode may be formed by a solution process by using the ink composition for a light-emitting device according to one or more embodiments.
Further, as the ink composition for a light-emitting device is used in an electron transport layer, there is no limitation of forming an electron transport layer as a common layer by deposition, and electron transport layers each including different electron transporting compounds according to R, G, and B may be formed.
As used herein, the terms “substantially,” “about,” and similar terms are used as terms of approximation and not as terms of degree, and are intended to account for the inherent deviations in measured or calculated values that would be recognized by those of ordinary skill in the art.
Any numerical range recited herein is intended to include all sub-ranges of the same numerical precision subsumed within the recited range. For example, a range of “1.0 to 10.0” is intended to include all subranges between (and including) the recited minimum value of 1.0 and the recited maximum value of 10.0, that is, having a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, such as, for example, 2.4 to 7.6. Any maximum numerical limitation recited herein is intended to include all lower numerical limitations subsumed therein and any minimum numerical limitation recited in this specification is intended to include all higher numerical limitations subsumed therein. Accordingly, Applicant reserves the right to amend this specification, including the claims, to expressly recite any sub-range subsumed within the ranges expressly recited herein.
It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects within each embodiment should typically be considered as available for other similar features or aspects in other embodiments. While one or more embodiments have been described with reference to the drawings, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope as defined by the following claims and equivalents thereof.
| Number | Date | Country | Kind |
|---|---|---|---|
| 10-2020-0103434 | Aug 2020 | KR | national |
