Claims
- 1. An ink jet printhead, comprising:a printhead substrate including a plurality of thin film layers; four side by side columnar arrays of drop generators formed in the printhead substrate and extending along a longitudinal extent; each columnar array of drop generators having at least 100 drop generators; the four columnar arrays of drop generators comprising a first columnar array and a second columnar array separated from each other by at most 630 micrometers, and a third columnar array and a fourth columnar array separated from each other by at most 630 micrometers; and four columnar arrays of FET drive circuits formed in the printhead substrate respectively adjacent the columnar arrays of drop generators for energizing the columnar arrays of drop generators.
- 2. The printhead of claim 1 further including a first ink feed slot and a second ink feed slot, and wherein:the first columnar array of drop generators and the second columnar may of drop generators disposed on either side of the first ink feed slot; and the third columnar array of drop generators and the fourth columnar array of drop generators disposed on either side of the second ink feed slot.
- 3. The printhead of claim 1 wherein the second columnar array of drop generators and the third columnar array of drop generators are separated by at most 800 micrometers.
- 4. The printhead of claim 1 wherein P is in the range of {fraction (1/300)}th inch to {fraction (1/600)}th inch.
- 5. The printhead of claim 1 wherein the drop generators are configured to emit drops having a drop volume in the range of 12 to 19 picoliters.
- 6. The printhead of claim 1 wherein the drop generators are configured to emit drops having a drop volume in the range of 3 to 7 picoliters.
- 7. The printhead of claim 1 wherein each of the drop generators includes a heater resistor having a resistance that is at least 100 ohms.
- 8. The printhead of claim 1 further including ground busses that overlap active regions of the FET drive circuits.
- 9. The printhead of claim 1 wherein each of the FET drive circuits has an on-resistance that is less than (250,000 ohm•micrometers2)/A, wherein A is an area of such FET drive circuit in micrometers2.
- 10. The printhead of claim 9 wherein each of the FET drive circuits has a gate oxide thickness that is at most 800 Angstroms.
- 11. The printhead of claim 9 wherein each of the FET drive circuits has a gate length that is less than 4 micrometers.
- 12. The printhead of claim 1 wherein each of the FET drive circuits has an on-resistance of at most 14 ohms.
- 13. The printhead of claim 1 wherein each of the FET drive circuits has an on-resistance of at most 16 ohms.
- 14. The printhead of claim 1 further including power traces, and wherein the FET drive circuits are configured to compensate for a parasitic resistance presented by the power traces.
- 15. The printhead of claim 14 wherein respective on-resistances of the FET circuits are selected to compensate for variation of a parasitic resistance presented by the power traces.
- 16. The printhead of claim 15 wherein a size of each of the FET circuits is selected to set the on-resistance.
- 17. The printhead of claim 15 wherein each of the FET circuits includes:drain electrodes; drain regions; drain contacts electrically connecting the drain electrodes to the drain regions; source electrodes; source regions; source contacts electrically connecting the source electrodes to the source regions; and wherein the drain regions are configured to set an on-resistance of each of the FET circuits to compensate for variation of a parasitic resistance presented by the power traces.
- 18. The printhead of claim 17 wherein the drain regions comprise elongated drain regions each including a continuously non-contacted segment having a length that is selected to set the on-resistance.
- 19. The printhead of claim 1 wherein each of the columnar arrays of FET drive circuits is contained in a region having a width that is at most 180 micrometers.
- 20. The printhead of claim 1 wherein each of the columnar arrays of FET drive circuits is contained in a region having a width that is at moat 250 micrometers.
- 21. The printhead of claim 1 wherein the printhead substrate has a length LS and a width WS, and wherein LS/WS is greater than 3.7.
- 22. The printhead of claim 1 wherein WS is approximately 2900 micrometers.
- 23. The printhead of claim 1 wherein the drop generators produce ink drops of a same predetermined color for providing monochrome printing.
- 24. The printhead of claim 1 wherein the at least 100 drop generators are separated by a drop generator pitch P, and wherein the drop generators produce ink drops having an ink drop volume that enables single pass printing of a resolution that is not less than 1(4P) dpi along a print axis parallel to the longitudinal extent.
- 25. An ink jet printhead, comprising:a printhead substrate including a plurality of thin film layers; four side by side columnar arrays of ink drop generators formed in the printhead substrate and extending along a longitudinal extent; each columnar array of ink drop generators having ink drop generators that are separated by an ink drop generator pitch P; the ink drop generators producing ink drops having an ink drop volume that enables single pass printing of a resolution that is 1(4P) dpi along a print axis parallel to the longitudinal extent; each of the ink drop generators including a heater resistor having a resistance of at least 100 ohms; four columnar arrays of FET drive circuits formed in the printhead substrate respectively adjacent the columnar arrays of ink drop generators for energizing the columnar arrays of ink drop generators; power traces connected to the ink drop generators and the FET drive circuits; and the FET drive circuits being configured to compensate for a variation in a parasitic resistance presented by the power traces.
- 26. The printhead of claim 25 wherein the four columnar arrays of drop generators comprise a first columnar array, a second columnar array, a third columnar array, and a fourth columnar array, wherein the printhead further comprises:a first ink feed slot and a second ink feed slot; wherein the first columnar array of ink drop generators and the second columnar array of ink drop generators are disposed on either side of the first ink feed slot; and wherein the third columnar array of ink drop generators and the fourth columnar array of ink drop generators are disposed on either side of the second ink feed slot.
- 27. The printhead of claim 26 wherein the second columnar array of ink drop generators and the third columnar array of ink drop generators are separated by at most 800 micrometers.
- 28. The printhead of claim 25 wherein P is in the range of {fraction (1/300)}th inch to {fraction (1/600)}th inch.
- 29. The printhead of claim 25 wherein the ink drop generators are configured to emit drops having a drop volume in the range of 12 to 19 picoliters.
- 30. The printhead of claim 25 wherein the ink drop generators are configured to emit drops having a drop volume in the range of 3 to 7 picoliters.
- 31. The printhead of claim 25 wherein the power traces include ground busses that overlap active regions of the FET drive circuits.
- 32. The printhead of claim 25 wherein each of the FET drive circuits has an on-resistance that is less than (250.000 ohm•micrometers2)/A, wherein A is an area of such FET drive circuit in micrometers2.
- 33. The printhead of claim 32 wherein each of the FET drive circuits has a gate oxide thickness that is at most 800 Angstroms.
- 34. The printhead of claim 32 wherein each of the FET drive circuits has a gate length that is less than 4 micrometers.
- 35. The printhead of claim 25 wherein each of the FET drive circuits has an on-resistance of at most 14 ohms.
- 36. The printhead of claim 25 wherein each of the FET drive circuits has an on-resistance of at most 16 ohms.
- 37. The printhead of claim 25 wherein respective on-resistances of the FET circuits are selected to compensate for variation of a parasitic resistance presented by the power traces.
- 38. The printhead of claim 37 wherein a size of each of the FET circuits is selected to set the on-resistance.
- 39. The printhead of claim 37 wherein each of the FET circuits includes:drain electrodes; drain regions; drain contacts electrically connecting the drain electrodes to the drain regions; source electrodes; source regions; source contacts electrically connecting the source electrodes to the source regions; and wherein the drain regions are configured to set an on-resistance of each of the FET circuits to compensate for variation of a parasitic resistance presented by the power traces.
- 40. The printhead of claim 39 wherein the drain regions comprise elongated drain regions each including a continuously non-contacted segment having a length that is selected to set the on-resistance.
- 41. The printhead of claim 25 wherein each of the columnar arrays of FET drive circuits is contained in a region having a width that is at most 180 micrometers.
- 42. The printhead of claim 25 wherein each of the columnar arrays of FET drive circuits is contained in a region having a width that is at most 250 micrometers.
- 43. The printhead of claim 25 wherein the printhead substrate has a length LS and a width WS, and wherein LS/WS is greater than 3.7.
- 44. The printhead of claim 43 wherein WS is approximately 2900 micrometers.
- 45. The printhead of claim 25 wherein the drop generators produce ink drops of a same predetermined color for providing monochrome printing.
- 46. The printhead of claim 25 wherein each columnar array of drop generators includes at least 100 ink drop generators.
- 47. The printhead of claim 25 wherein the four columnar arrays of ink drop generators comprise a first columnar array and a second columnar array that are separated from each other by at most 630 micrometers, and a third columnar array and a fourth columnar array that are separated from each other by at most 630 micrometers.
- 48. The printhead of claim 47 wherein the second columnar array of ink drop generators and the third columnar array of ink drop generators are separated by at most 800 micrometers.
CROSS REFERENCE TO RELATED APPLICATIONS
This is a continuation of application Ser. No. 09/773,182 filed on Jan. 30, 2001 now U.S. Pat. No. 6,523,935, which is hereby incorporated by reference herein. A
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Continuations (1)
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Number |
Date |
Country |
Parent |
09/773182 |
Jan 2001 |
US |
Child |
10/278085 |
|
US |