Ink jet recording head and ink jet recording apparatus incorporating the same

Information

  • Patent Grant
  • 6505919
  • Patent Number
    6,505,919
  • Date Filed
    Friday, February 18, 2000
    24 years ago
  • Date Issued
    Tuesday, January 14, 2003
    21 years ago
Abstract
A pressure generating chamber communicating with a nozzle orifice from which ink is to be ejected. A vibration plate constitutes at least a part of the pressure generating chamber. A piezoelectric element includes a lower electrode constituting at least a part of the vibration plate, a piezoelectric layer formed on the lower electrode, an upper electrode formed on the piezoelectric layer, and an active part for actuating the vibration plate to eject the ink from the nozzle orifice. A neutral plane of the actuation of the active part is located in the vibration plate.
Description




BACKGROUND OF THE INVENTION




The present invention relates to an ink jet recording head wherein a vibration plate, on the surface of which piezoelectric elements are formed, constitutes one part of a pressure generating chamber that communicates with nozzle orifices from which ink droplets are ejected when the piezoelectric elements are displaced, and relates as well to an ink jet recording apparatus incorporating the recording head.




In two types of ink jet recording heads that are now in practical use, vibration plates form parts of pressure generating chambers that communicate with nozzle orifices. When such a vibration plate is distorted in response to the vibration of a piezoelectric element, pressure is applied to ink in a pressure generating chamber and a drop of ink is ejected through an associated nozzle orifice. The head types for which vibration plates are used are: an ink jet recording head that employs piezoelectric actuators, in a vertical vibration mode, that are extended or compressed in the axial direction of the piezoelectric elements; and an ink jet recording head that employs piezoelectric actuators in a flexure vibration mode.




In the first head type, which is appropriate for high-resolution printing, the volumes of pressure generating chambers are changed by bringing end faces of piezoelectric elements into contact with a vibration plate. However, to manufacture this first type, a number of difficult procedures must be preformed, including the cutting of piezoelectric material to provide a comb-tooth-shaped device, which corresponds to the pitches of a nozzle orifice array, and the positioning and securing of the obtained piezoelectric element relative to the pressure generating chambers. Accordingly, the manufacturing process is complicated.




As for the second ink jet recording type, only a comparatively simple process, which involves the attachment of a piezoelectric green sheet having a shape that corresponds to the position of pressure generating chambers and the annealing of the resultant structure, is required to provide piezoelectric elements for a vibration plate. However, since flexure vibration is employed, specific areas are to a degree required, and providing for a high-resolution array is difficult.




To resolve the shortcomings of the second ink jet recording head, as proposed in Japanese Patent Publication No. 5-286131A, a thin-film formation technique is used to deposit a uniform piezoelectric layer across the entire surface of the vibration plate. A lithographic method is then used to subdivide the piezoelectric layer to provide shapes that match those of the pressure generating chambers and to form independent piezoelectric elements for the individual pressure generating chambers.




According to this method, the process by which piezoelectric elements are adhered to a vibration plate is not required, and the piezoelectric elements themselves can be formed using a precise and easily employed procedure, such as lithography. Further, since the piezoelectric elements that are produced in this way are thin, they are suitable for high-speed driving. In this case, while the piezoelectric layer that is deposited covers the entire surface of a vibration plate, only the upper electrode is formed for each pressure generating chamber. With this arrangement, the piezoelectric elements corresponding to the individual pressure generating chambers can be driven.




However, according to the manufacturing method for which the thin-film formation technique and the lithographic process are used, generally, the piezoelectric layer is formed so that it is thicker than the vibration plate in order to improve its piezoelectric characteristics. Therefore, when the piezoelectric elements are driven, the deforming efficiency is reduced by a neutral plane that is located inside the piezoelectric layer. As a result, the force of the displacement produced by the piezoelectric layer can not satisfactorily be converted into a force that can be used to eject ink.




SUMMARY OF THE INVENTION




To resolve this problem, it is one objective of the invention to provide an ink jet recording head that can more efficiently employ the force of the displacement developed when piezoelectric elements are driven, and an ink jet recording apparatus incorporating the recording head.




In order to achieve the above object, according to a first aspect of the present invention, there is provided an ink jet recording head comprising:




a pressure generating chamber communicating with a nozzle orifice from which ink is to be ejected;




a vibration plate constituting at least a part of the pressure generating chamber; and




a piezoelectric element including:




a lower electrode constituting at least a part of the vibration plate;




a piezoelectric layer formed on the lower electrode; and




an upper electrode formed on the piezoelectric layer, wherein an active part of the piezoelectric element for actuating the vibration plate to eject ink from the nozzle orifice is situated so as to face the pressure generating chamber, and wherein a neutral plane of the actuation of the piezoelectric element is located in the vibration plate.




Here, the vibration plate may be made of a ductile material. The vibration plate and the lower electrode may be made of the same material.




According to the first aspect, since the neutral plane is not located in the piezoelectric layer, only the force produced by compression is exerted by the piezoelectric layer that is driven, and the deforming efficiency provided by the piezoelectric elements is increased.




According to a second aspect of the invention, in the ink jet recording head of the first aspect, the following relationship is satisfied.






E


s


D


2


>E


f


d


2








where




E


f


: Young's modulus for the piezoelectric film and the upper electrode film




E


s


: Young's modulus for the vibration plate




d: total thickness of the piezoelectric film and the upper electrode




D: thickness of the vibration plate




Preferably, the above relationship is satisfied in the active part of the piezoelectric element.




According to the second aspect, since the neutral plane is precisely positioned in the vibration plate, the deforming efficiency is improved.




According to a third aspect of the invention, in the ink jet recording head of the second aspect, E


s


D


2


is 1 to 50 times as large as E


f


d


2


.




According to the third aspect, since the above relationship is defined within a predetermined range, the deforming efficiency is even more improved.




According to a fourth aspect of the invention, in the ink jet recording head of the first to the third aspects, the tensile stress of the lower electrode is greater than the stress of the piezoelectric layer.




According to the fourth aspect, the displacement of the piezoelectric layer due to the stress of the lower electrode is protected from being hindered.




According to a fifth aspect of the invention, in the ink jet recording head of the fourth aspect, the stress of the piezoelectric layer is tensile stress, and the tensile stress of the lower electrode is one to three times the tensile stress of the piezoelectric layer.




According to the fifth aspect, the displacement of the piezoelectric layer due to the stress of the lower electrode is more precisely protected from being hindered.




According to a sixth aspect of the invention, in the ink jet recording head of the first to the fifth aspects, the tensile stress of the upper electrode is greater than the stress of the piezoelectric layer.




According to the sixth aspect, the displacement of the piezoelectric layer due to the stress of the upper electrode is protected from being hindered.




According to a seventh aspect of the invention, in the ink jet recording head of the sixth aspect, the stress of the piezoelectric layer is tensile stress, and the tensile stress of the upper electrode is one to three times as large as the tensile stress of the piezoelectric layer.




According to the seventh aspect, the displacement of the piezoelectric layer due to the stress of the upper electrode is more precisely protected from being hindered.




According to an eighth aspect of the invention, in the ink jet recording head of the first to the seventh aspects, the thickness of the vibration plate is thicker than at least a total thickness of the active part of the piezoelectric film and the upper electrode.




The ink jet recording head may further comprise an insulating layer formed on the piezoelectric element. Here, the thickness of the vibration plate is thicker than a total thickness of the active part of the piezoelectric film, the upper electrode and the insulating layer. Preferably, the above relationship is satisfied in the active part of the piezoelectric element.




According to the eighth aspect, the positioning of the neutral plane in the vibration plate is ensured, and the deforming efficiency is improved.




According to a ninth aspect of the invention, in the ink jet recording head according to the first to the eighth aspects, the vibration plate includes, at the least, either a metal oxide film or a brittle film, and due to the driving of the piezoelectric member active unit, the neutral plane of the actuation of the piezoelectric element is located in the metal oxide film or in the brittle material film.




According to the ninth aspect, the stress that is imposed on the vibration plate is suppressed, and damage to or deterioration of the vibration plate can be prevented.




According to a tenth aspect of the invention, in the ink jet recording head of the ninth aspect, the brittle material film is made of zirconium oxide.




According to the tenth aspect, since the brittle film wherein the neutral plane is located is formed of a specific material, its destruction due to stress during displacement can be prevented.




According to an eleventh aspect of the invention, in the ink jet recording head of the ninth aspect, the metal oxide film is made of silicon oxide.




According to the eleventh aspect, since the metal oxide film wherein the neutral plane is located is formed of a specific material, its destruction due to stress during displacement can be prevented.




According to a twelfth aspect of the invention, in the ink jet recording head of the first to the eleventh aspects, the pressure generating chamber is formed in a monocrystalline silicon substrate by anisotropic etching, and the laminated structure of the piezoelectric element is formed by using a film formation technique and a lithographic process.




According to the twelfth aspect, a large number of ink jet recording heads having high resolution arrangements of nozzle orifices can be manufactured comparatively easily.




According to a thirteenth aspect of the invention, there is provided an ink jet recording apparatus comprising ink jet recording heads defined in the first to the twelfth aspects.




According to the thirteenth aspect, an ink jet recording apparatus having a greater number of reliable heads can be provided.











BRIEF DESCRIPTION OF THE DRAWINGS




In the accompanying drawings:





FIG. 1

is an exploded perspective view showing an ink jet recording head according to one embodiment of the invention;





FIG. 2A

is a plan view showing the ink jet recording head of

FIG. 1

;





FIG. 2B

is a section view showing the ink jet recording head of

FIG. 1

;





FIGS. 3A and 3B

are perspective views showing variations of the sealing plate of

FIG. 1

;





FIGS. 4A

to


6


C are section views showing a thin film formation process;





FIG. 7A

is a plan view showing an active part of a piezoelectric actuator;





FIG. 7B

is a section view showing the active part of

FIG. 7A

;





FIG. 8

is a section view shown an active part of a piezoelectric actuator incorporated in a related ink jet recording head;





FIG. 9

is a section view showing an active part of a piezoelectric actuator according to another embodiment of the invention;





FIG. 10

is an exploded perspective view showing an ink jet recording head according to still another embodiment of the invention;





FIG. 11

is a section view showing the ink jet recording head of

FIG. 10

; and





FIG. 12

is a schematic view showing an ink jet recording apparatus incorporating the ink jet recording head of the invention.











DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS





FIG. 1

is an exploded perspective view of an ink jet recording head according to a first embodiment of the present invention.

FIG. 2A

is a plan view, and

FIG. 2B

is a longitudinal section view of one pressure generating chamber.




As is shown in

FIG. 1

, a channel formation substrate


10


in this embodiment is a silicon crystal substrate having a plane index (


110


). Generally, a channel formation substrate


10


having a thickness of 150 to 300 μm is employed, while a thickness of approximately 220 μm is preferable. This is because the array density can be increased, while the rigidity of the partition wall between the adjacent pressure generating chambers is maintained.




One face of the channel formation substrate


10


serves as an opening face, while formed on the other face of the substrate


10


is an elastic film


50


, which is made of silicon dioxide that is obtained in advance by thermal oxidization, having a thickness of 1 to 2 μm.




Nozzle orifices


11


and pressure generating chambers


12


in the opening face of the channel formation substrate


10


are formed by anisotropic etching of the silicon crystal substrate.




In this case, the anisotropic etching is performed by utilizing the following characteristics: when the silicon crystal substrate is immersed in an alkaline solution, such as KOH, gradual erosion of the substrate occurs, and a first plane (


111


) and a second plane (


111


) appear; a first plane (


111


) is perpendicular to the plane (


110


), while a second plane (


111


) forms with the first plane (


111


) an angle of approximately 70 degrees, and forms with the plane (


110


) an angle of approximately 35 degrees; and the etching rate of the plane (


111


) is about {fraction (1/180)} of the etching rate of the plane (


110


). As a result of the anisotropic etching, fine processing can be performed by using, as the basis, depth processing to provide a parallelogram shaped structure, the sides of which comprise two first faces (


111


) and, obliquely, two second faces (


111


). Therefore, a high resolution arrangement of pressure generating chambers


12


can be provided.




In this embodiment, the long sides of each pressure generating chamber


12


are formed by first faces (


111


), while the short sides are formed by second faces (


111


). The pressure generating chambers


12


are formed by etching the channel formation substrate


10


until the elastic film


50


is reached. It should be noted that only an extremely small amount of the elastic film


50


is immersed into an alkaline solution when the silicon crystal substrate is etched.




The nozzle orifices


11


that are formed are narrower and shallower than the pressure generating chambers


12


, and each of them communicates with one end of a pressure generating chamber


12


. That is, a nozzle orifice


11


is formed by etching (half-etching) the silicon crystal substrate to a degree in the direction of its thickness. It should be noted that the half-etching is performed by adjusting the etching time.




The size of a pressure generating chamber


12


wherein pressure is applied to ink to eject ink droplets, and the sizes of nozzle orifices


11


, through which ink droplets are ejected are optimized in accordance with the volume of the ejected ink droplets, the ejection speed and the droplet ejection frequency. When, for example, 360 ink droplets are to be ejected per inch, the nozzle orifices


11


must be precisely formed at intervals of several tens of μm.




Furthermore, the pressure generating chambers


12


communicate with a common ink reservoir


31


via ink supply ports


21


that are formed in a sealing plate


20


, which will be described later, at positions corresponding to an end of each pressure generating chamber


12


. Ink from the common ink reservoir


31


is supplied to the individual pressure generating chambers


12


via the ink supply ports


21


.




The sealing plate


20


, in which ink supply ports


21


are formed at locations corresponding to the pressure generating chambers


12


, is made of a glass ceramic. The sealing plate


20


has a thickness of 0.1 to 1 mm, and a linear expansion coefficient of 2.5 to 4.5 [×10


−6


/° C.] at a temperature that is equal to or less than 300° C. As is shown in

FIGS. 3A and 3B

, the ink supply ports


21


may be provided as a single slit


21


A or as a plurality of latitudinally formed slits


21


B that extend across and communicate with the ink supply port ends of the pressure generating chambers


12


. One face of the sealing plate


20


covers the entire face of the channel formation substrate


10


, and serves as a reinforcement plate to protect the silicon crystal substrate from damage due to a shock or the external force. The other face of the sealing plate


20


constitutes one wall of the common ink reservoir


31


.




A reservoir formation substrate


30


forms the peripheral walls of the common ink reservoir


31


, and is manufactured by die cutting a satisfactorily thick stainless steel plate that is consonant with the number of nozzle orifices and the ink droplet ejection frequency. In this embodiment, the reservoir formation substrate


30


has a thickness of 0.2 mm.




One face of a reservoir side plate


40


, which is made of a stainless steel substrate, forms one wall of the common ink reservoir


31


, and in the other face a recessed portion


40




a


is formed using half etching so that only a thin wall


41


remains. In addition, die cutting is used to form an ink introduction port


42


through which externally supplied ink enters the common ink reservoir


31


. The thin wall


41


is used to absorb the pressure that is exerted to the side opposite the nozzle orifices


11


when ink droplets are ejected. The thin wall


41


prevents undesired positive or negative pressure from being transmitted via the common ink reservoir


31


to the individual pressure generating chambers


12


. In this embodiment, taking into account the rigidity required to connect the ink introduction port


42


to an external ink supplier, the reservoir side plate


40


has a thickness of 0.2 mm, which at the thin wall


41


is reduced to a thickness of 0.02 mm. However, to eliminate the half etching process that is performed to form the thin wall


41


, the reservoir side plate


40


may originally have a thickness of 0.02 mm.




An insulating film


55


, having a thickness, for example, of 0.1 to 2 μm, is deposited on the side of the elastic film


50


facing away from the opening face of the channel formation substrate


10


, and on this insulating film


55


a lower electrode film


60


having a thickness, for example, of approximately 0.2 μm, a piezoelectric film


70


having a thickness, for example, of approximately 1 μm, and an upper electrode film


80


having a thickness, for example, of approximately 0.1 μm are laminated using a process that will be described later. In this manner, a piezoelectric element


300


is provided. It should be noted that the piezoelectric element


300


is the portion that includes the lower electrode film


60


, the piezoelectric film


70


and the upper electrode film


80


. Generally, one electrode for the piezoelectric element


300


is formed and used as a common electrode, and patterning is used to form for each of the generation chambers


12


another electrode and the piezoelectric film


70


. In this embodiment, a piezoelectric active part


320


is the portion that includes the electrode and the piezoelectric film


70


that are formed by patterning, and that is piezoelectrically distorted by the application of a voltage to the two electrodes. Also in this embodiment, the lower electrode film


60


is defined as the common electrode for the piezoelectric element


300


, while the upper electrode film


80


is defined as the individually provided electrode for the piezoelectric element


300


. The functions of these electrodes, however, may be reversed if the drive circuit and wiring are altered. Furthermore, in this embodiment, the piezoelectric element


300


and the vibration plate that is displaced when the piezoelectric element


300


is driven are together called a piezoelectric actuator. And the elastic film


50


, the insulating film


55


and the lower electrode film


60


together function as the vibration plate.




An explanation will now be given, while referring to

FIG. 4

, for a process by which the piezoelectric film


70


is formed on the channel formation substrate


10


, which is a silicon crystal substrate.




As is shown in

FIG. 4A

, first, a silicon crystal substrate wafer that will serve as the channel formation substrate


10


is thermally oxidized in a diffusion furnace at approximately 1100° C., and the elastic film


50


, which is made of silicon dioxide, is deposited on the substrate


10


.




Then, as is shown in

FIG. 4B

, the insulating film


55


is deposited on the elastic film


55


. It is preferable that the insulating film


55


be formed of a material, e.g., an oxide or nitride of at least one element that is selected from the elements of the piezoelectric film


70


, that can be satisfactorily attached to the piezoelectric film


70


. In this embodiment, a zirconium layer is deposited on the elastic film


50


, and then, in the diffusion furnace, the resultant structure is thermally oxidized at approximately 1150° C. to obtain an insulating film


55


that is made of zirconium dioxide.




Following this, as is shown in

FIG. 4C

, the lower electrode film


60


is formed by sputtering. Platinum is an appropriate material for the lower electrode film


60


because the piezoelectric film


70


, formed by sputtering or the sol-gel method, which will be described later, must be crystallized by annealing it at a temperature of 600 to 1000° C. under normal atmospheric conditions or in an oxygen rich atmosphere. That is, the material of the lower electrode film


60


must maintain its conductivity at a high temperature in an oxygen rich atmosphere. Especially when titanate zirconate (PZT) is employed as the piezoelectric film


70


, the change in the conductivity due to the diffusion of an oxidizing flame is preferably small. For this reason, platinum is the appropriate material.




Next, as is shown in

FIG. 4D

, the piezoelectric film


70


is deposited. For this, a so-called sol-gel method is employed in this embodiment. According to this method, a coating of a so-called sol, produced by heating and diffusing an organic metal in a solvent, is applied and dried to obtain a gel, and the gel is then annealed at a high temperature to obtain a piezoelectric film


70


of metal oxide. Note that a PZT material is appropriate for the piezoelectric film


70


when it is employed for an ink jet recording head. The method used to deposit the piezoelectric film


70


is not specifically limited, and the sputtering method may be also employed.




An additional method may be employed whereby the PZT precursor film is first formed using the sol-gel method or sputtering, and then a high-pressure process, during which the film is immersed in an alkaline solution, is employed to induce the growth of crystals at a low temperature.




Finally, as is shown in

FIG. 4E

, the upper electrode film


80


is deposited. For this, a highly conductive material is used, and various metals, such as aluminum, gold, nickel and platinum, and a conductive oxide can be employed. In this embodiment, platinum is deposited by sputtering.




Then, the lower electrode film


60


, the piezoelectric film


70


and the upper electrode film


80


are patterned as is shown in

FIGS. 5A and 5B

.




Specifically, as is shown in

FIG. 5A

, the lower electrode


60


, the piezoelectric film


70


and the upper electrode film


80


are etched together to pattern the entire lower electrode film


60


. Following which, as is shown in

FIG. 5B

, only the piezoelectric films


70


and the upper electrode films


80


are etched to pattern the active part


320


of the piezoelectric element


300


.




As is described above, after the lower electrode film


60


has been patterned, the active part


320


is patterned, and this completes the patterning process.




After the patterning of the lower electrode film


60


and the piezoelectric member active units


320


has been completed, it is preferable that an inter-layer insulating film


90


be deposited that covers, at the least, the peripheral edges of the top face of each upper electrode film


80


and the side faces of each piezoelectric film


70


(see FIG.


1


).




The process employed to deposit such an insulating layer is shown in

FIGS. 6A

to


6


C.




First, as is shown in

FIG. 6A

, the inter-layer insulating film


90


is deposited so that it covers the peripheral edges of the upper electrode films


80


and the side faces of the piezoelectric films


70


. In this embodiment, a negative photosensitive polyimide is used for the inter-layer insulating film


90


.




Then, as is shown in

FIG. 6B

, the inter-layer insulating film


90


is patterned, and contact holes


90




a


are formed in the vicinity of ends of the corresponding pressure generating chambers


12


, the side of which ink is supplied. The contact holes


90




a


are used for the connection of lead electrodes


100


to the upper electrode films


80


. One end of each lead electrode


100


is connected to a corresponding upper electrode film


80


, and the other end extends outward to contact the connection terminal. The lead electrodes


100


are formed so that the ends are narrow and can thus precisely supply drive signals to the upper electrode films


80


they contact. In this embodiment, the contract holes


90




a


are formed at positions corresponding to the pressure generating chambers


12


. However, the piezoelectric films


70


and the upper electrode films


80


may be extended downward to the peripheral walls of the pressure generating chambers


12


, and the contact holes


90




a


may be formed at positions corresponding to the peripheral walls.




When the deposition process has been completed, as is shown in

FIG. 6C

, to form the pressure generating chambers


12


, anisotropic etching, using the alkaline solution, of the silicon crystal substrate is performed.




The arrangement of the wiring used to drive the active part


320


of the piezoelectric element


300


is not specifically limited. That is, in this example, the lower electrode film


60


is extends across the entire surface, and the piezoelectric film


70


and the upper electrode film


80


are patterned so that the areas they cover correspond to the pressure generating chambers


12


. However, the piezoelectric films


70


and the upper electrode films


80


may be externally extended from the ends of the pressure generating chambers


12


, so that formation of contact holes is not required. Further, the lower electrode film


60


may also be patterned so that the areas covered correspond to the pressure generating chambers


12


. An arbitrary wiring arrangement can also be employed.




In the film deposition process sequence and the anisotropic etching described above, multiple chips are simultaneously formed on a single wafer, and after the process has been terminated, the wafer is cut to provide the one-chip channel formation substrate


10


shown in FIG.


1


. Thereafter, to provide an ink jet recording head, the obtained channel formation substrate


10


is sequentially bonded to the sealing plate


20


, the reservoir formation substrate


30


, and the reservoir side plate


30


.




The thus arranged ink jet recording head receives ink through the ink introduction port


42


, which communicates with an external ink supplier (not shown), and the ink filling the common ink reservoir


31


is transferred internally until it reaches the nozzle orifices


11


. Then, when in accordance with a recording signal from an external driver (not shown) a voltage is applied via the lead electrode


100


to the lower electrode film


60


and an upper electrode


80


, the elastic film


50


, the insulating film


55


, the lower electrode film


60


and a piezoelectric film


70


are deformed. And as a result, the pressure in a pressure generating chamber


12


is increased and an ink droplet is ejected through a nozzle orifice


11


.





FIGS. 7A and 7B

are a plan view and a section view of the essential portion of the ink jet recording head in this embodiment.




As is shown in

FIGS. 7A and 7B

, which is a section view taken along line B-B′ in

FIG. 7A

, in this embodiment the piezoelectric element


300


, which is constituted by the lower electrode film


60


, the piezoelectric films


70


and the upper electrode films


80


, is provided in an area opposite the pressure generating chambers


12


, and serves as the active part


320


of the piezoelectric element


300


. In the vicinity of the longitudinal end of the active part


320


, the upper electrode films


80


are connected to lead electrodes


100


via the contact holes


90




a


in the inter-layer insulating film


90


, which is deposited on the active part


320


.




In this embodiment, as is described above, the insulating film


55


is made of zirconium oxide and is deposited so that it occupies all the area between the elastic film


50


and the lower electrode film


60


, which is one of the electrodes of the active part


320


of the piezoelectric element


300


, and together, the elastic film


50


, the insulating film


55


and the lower electrode film


60


serve as the vibration plate. The vibration plate is formed so that it is thicker than the piezoelectric film


70


and the upper electrode film


80


of the active part


320


, and thus, when the active part


320


is driven, the neutral plane is positioned in the vibration plate. That is, in this embodiment, as is indicated by the broken line, the thickness' of the individual layers that constitute the vibration plate are adjusted, so that when the active part


320


is driven, the neutral plane y


0


is located inside the insulating film


55


.




When the boundary plane between the vibration plate (the lower electrode film


60


) and the piezoelectric film


70


is used as a reference, the neutral plane y


0


is represented by expression (1).










y
0

=






-
D

0





E
s


1
-

v
s




y







y



+



0
d





E
f


1
-

v
f




y







y







E
s


1
-

v
s







+


E
f


1
-

v
f






y



y







(
1
)













Here,




E


f


: Young's modulus for the piezoelectric film and the upper electrode film;




E


s


: Young's modulus for the vibration plate




ν


f


: Poisson ratios for the piezoelectric film and the upper electrode




ν


s


: Poisson ratio for the vibration plate




d: Total thickness of the piezoelectric film and the upper electrode




D: Thickness of the vibration plate




By using this expression, the thickness' of the individual layers are determined in accordance with the specific characteristics, such as Young's modulus and the Poisson ratios for the layers, so that the relationship y


0


<0 is established. As a result, the neutral plane can be positioned inside the vibration plate. The Young modulus and the Poisson ratios of the vibration plate and the piezoelectric film are approximately 0.2 to 0.3 and the denominator is always a positive value. Therefore, when the thickness' of the piezoelectric layer and the vibration plate are determined in accordance with their characteristics, so that the relationship of expression (2) is established, the neutral plane can be positioned inside the vibration plate.












0
D





E
s


1
-

v
s




y



y



>



0
d





E
f


1
-

v
f




y



y







(
2
)













That is, only the thickness' of the individual layers need be determined, so that the product of Young's modulus for the vibration plate and the square of the film thickness is greater than the product of Young's modulus for the upper electrode films


80


and the piezoelectric films


70


and the square of the film thickness. It is especially preferable that the product of Young's modulus for the vibration plate and the square of the film thickness be 1 to 50 times as large as the product of Young's modulus for the upper electrode films


80


and the piezoelectric films


70


and the square of the film thickness. As a result, the displacement of the vibration plate when the piezoelectric element is driven can be improved.




When a vibration plate is displaced by the application of a voltage to a piezoelectric film


70


, the piezoelectric film


70


is stiffened in accordance with the displacement, and Young's modulus seems to be increased. Also in this case, it is preferable that the thickness' of the individual layers be determined in accordance with the characteristics of the layers, so as to satisfy the expression (2).




In this embodiment, the thickness' of the layers that constitute the vibration plate are adjusted, and the neutral plane is positioned in the vibration plate. However, the method that can be used is not thereby limited, and when the piezoelectric film is formed, the thickness of the upper electrode film


80


that is to be formed may be determined in accordance with the characteristics and thickness' of the individual layers. As a result, the neutral plane can be easily and definitely positioned inside the vibration plate. At this time, when the insulating film


55


is formed of zirconium oxide, which is comparatively thick or hard, the thickness of the upper electrode film


80


can be more easily adjusted.




Even when the insulating film


55


that is deposited is hard or thick, so long as it is practically employed, it does not adversely affect the displacement of the vibration plate that occurs when the piezoelectric element is driven. Further, when the rigidity of the vibration plate is increased and the deformation amount is reduced because of the thickness of the vibration plate that has been formed, to cope with this problem the width of the pressure generating chambers must be increased.




Further, the neutral plane can be positioned in the vibration plate by suitably selecting the cross-sectional shape of the piezoelectric film. Namely, according to the present invention, the neutral plane is resultantly positioned in the vibration plate by selecting at least one of the physical property, the film thickness, the cross-sectional shape of the respective films suitably within the scope of the invention.




Further, it is preferable that at least one of the electrodes that are formed on the surface of the piezoelectric film


70


, e.g., the lower electrode film


60


, have a tensile stress that is greater than that of the piezoelectric film


70


. And it is especially preferable that when tensile stress is applied to the piezoelectric film


70


, that the tensile stress placed on the lower electrode film


60


be 1 to 3 times that applied to the piezoelectric film


70


. Similarly, it is preferable that the tensile stress applied to the upper electrode film


80


be greater than that placed on the piezoelectric film


70


. It is also especially preferable that when tensile stress is placed to the piezoelectric film


70


, that the tensile stress applied to the upper electrode film


80


be 1 to 3 times that placed on the piezoelectric film


70


. Therefore, the deformation of the piezoelectric film


70


can be protected from being hindered, and as a result, the efficiency of the deformation of the piezoelectric film


70


can be improved.




When the active part


320


of the piezoelectric element


300


of the thus arranged ink jet recording head is driven by application of a voltage, with the neutral plane y


0


acting as a boundary, compression stress is exerted on the vibration plate, and the layers of the active part


320


nearer the upper electrode film


80


, while tension stress is applied to the side of the elastic film


50


. Therefore, as in this embodiment, when the neutral plane y


0


is positioned inside the vibration plate, only the compression stress is exerted on the piezoelectric film


70


when the active part


320


is driven. Therefore, the displacement force produced by the piezoelectric film


70


can be satisfactorily converted into an ink ejection force, and the drive voltage can be reduced.




In addition, in this embodiment, the neutral plane y


0


is specifically positioned inside the insulating film


55


, which is composed of a brittle material, i.e., the insulating film


55


, composed of a brittle material, is positioned in an area wherein the least stress is concentrated. Therefore, when the active part


320


of the piezoelectric element


300


is driven, the stress exerted on the vibration plate is reduced, and the destruction or the deterioration of the vibration plate can be prevented.




The present invention is not limited to the above embodiment. For example, the vibration plate may be provided as a layer constituted only by the lower electrode. Namely, the vibration plate may be made of a ductile material such as platinum so as to be suitable for tensile stress.




When, as in the conventional art, the neutral plane is positioned in the piezoelectric film


70


, as is shown in

FIG. 8

, tensile stress is exerted on a piezoelectric film


70




b


that is nearer the elastic film


50


, even though greater compression stress is exerted on a piezoelectric film


70




a


that is nearer the upper electrode film


80


than the neutral plane. Therefore, the displacement force of the piezoelectric film


70


can not be satisfactorily converted into an ink ejection force, and deterioration of the deforming efficiency occurs.




A specific example of the ink jet recording head for this embodiment is shown below.




In this embodiment, to satisfy the expression (2), the vibration plate and the individual layers of the piezoelectric element were formed in accordance with the characteristics and thickness' shown in Table 1, so that an ink jet recording head was provided wherein the neutral plane y


0


was positioned inside the vibration plate.




As comparison examples, the vibration plate and the individual layers of the piezoelectric element were formed in accordance with the characteristics and thickness' shown in Table 1, while the other conditions were the same as in the embodiment. Ink-jet recording heads were thereby provided wherein the neutral plane y


0


was positioned outside the vibration plate.
















TABLE 1












Comparison




Comparison







Embodiment




Example 1




Example 2




























Elastic film




Young's




75




75




75







modulus [GPa]







Thickness [μm]




1




1




1






Insulating




Young's




150




150




150






film




modulus [GPa]







Thickness [μm]




0.5




0.4




0.5






Lower




Young's




200




200




100






electrode




modulus [GPa]






film




Thickness [μm]




0.5




0.4




0.5






Piezoelectric




Young's




68




68




100






film




modulus [GPa]







Thickness [μm]




2




2




2






Upper




Young's




200




200




200






electrode




modulus [GPa]






film




Thickness (μm)




0.1




0.3




0.1






























S
1


S
2


=



E
s



D
2




E
f



d
2













1.4




0.5




0.7














For the ink jet recording head of the embodiments and the comparison examples, the piezoelectric element was driven by the application of a voltage of 25 V, and the deformation amount and the deforming efficiency (deforming energy per unit length upon the application of a voltage of 25 V) of the vibration plate were measured. It should be noted that in Comparison example 1, the film thickness was changed while the distortion and Young's modulus were constant, and that in Comparison example 2, Young's modulus was changed, while the film thickness and the distortion were constant. The obtained results are shown in Table 2.
















TABLE 2












Comparison




Comparison







Embodiment




Example 1




Example 2





























Deformation amount




248.4




190.8




213.0







for vibration plate







upon application of







voltage of 25 V [nm]







Deforming energy per




9.86 × 10


−9






6.62 × 10


−9






8.10 × 10


−9









unit length upon appli-







cation of 25 V [J]















As is apparent from Table 2, in the embodiment wherein the neutral plane was positioned inside the vibration plate, the deformation amount and the deforming energy were considerably improved compared with the comparison examples. That is, when the neutral plane is positioned inside the vibration plane, the deforming efficiency of the vibration plate that obtain when the piezoelectric element is driven can be considerably improved.




One embodiment of the present invention has been explained; however, the basic structure of the ink jet recording head is not limited to that described in this embodiment.




In the above embodiment, the neutral plane is positioned inside the insulating film


55


of the vibration plate. However, the positioning of the neutral plane is not thereby limited, and as is shown in

FIG. 9

, for example, the thickness' of the individual layers of the vibration plate may be adjusted, and as indicated by the broken line, the neutral plane y


0


may be positioned inside the elastic film


50


. Further, the neutral plane y


0


may also be positioned inside the lower electrode film


60


. So long as the neutral plane y


0


is positioned inside the vibration plate, the deforming efficiency can be increased, as it is in the above embodiment.




Furthermore, the reservoir formation substrate


30


, as well as the sealing plate


20


, may be made of glass ceramics, and the thin film


40


may be formed as a separate glass ceramic member. The materials and the structure can be freely altered.




In the above embodiment, the nozzle orifices are formed in the end face of the channel formation substrate


10


. However, the nozzle orifices may be formed so that they extend outward perpendicular to the end face.





FIG. 10

is an exploded perspective view of the thus structured embodiment, and

FIG. 11

is a section view of the flow passage. In this embodiment, nozzle orifices


11


are formed on a nozzle substrate


120


that is opposite the piezoelectric element, and nozzle communication ports


22


, which connect the nozzle orifices


11


to pressure generating chambers


12


, are formed that penetrate a sealing plate


20


, a reservoir formation substrate


30


, a thin plate


41


A and a reservoir side plate


40


A.




The arrangement of this embodiment is substantially the same as that of the first embodiment, except that the thin plate


41


A and the reservoir side plate


40




a


are formed as separate members, and that an opening


40




b


is formed in the reservoir side plate


40


A. The same reference numerals are also used to denote corresponding components, and no explanation for them will be given.




This embodiment can also be applied to an ink jet recording head wherein the common ink reservoir is formed in the channel formation substrate.




In the above described embodiment, a thin-film ink jet recording head is employed that can be manufactured by using the film deposition technique and a lithographic process. The present invention, however, is not limited to this type of ink jet recording head, since the present invention can also be applied for ink jet recording heads having various other arrangements, such as an ink jet recording head wherein pressure generating chambers are formed by lamination of substrates, an ink jet recording head wherein a piezoelectric film is deposited by adhering a green sheet or by screen printing, or an ink jet recording head wherein a crystal growth is used to deposit a piezoelectric film.




Furthermore, although in the above embodiments the inter-layer insulating film is formed between the piezoelectric element and the lead electrode, the arrangements that can be used are not thereby limited. For example, instead of forming the inter-layer insulating film, an anisotropic conductive film can be thermally welded to the upper electrodes and connected to the lead electrode. Either this, or various bonding techniques, such as wire bonding, can be employed for such connections.




As is described above, the present invention can be applied for various ink jet recording heads without departing from the scope of the subject of the invention.




The ink jet recording head in each embodiment described above constitutes one part of a recording head unit, wherein an ink flow path is provided that communicates with an ink cartridge, that is incorporated in an ink jet recording apparatus.

FIG. 12

is a schematic diagram illustrating an example ink jet recording apparatus.




As is shown in

FIG. 12

, cartridges


2


A and


2


B, which constitute ink supplier, are detachably mounted on recording head units


1


A and


1


B, each of which includes an ink jet recording head. A carriage


3


, on which the recording head units


1


A and


1


B are mounted, is fitted around a carriage shaft


5


, which is attached to a main body


4


, so that it can slide freely in the axial direction. The recording head units


1


A and


1


B are respectively used to eject, for example, a black ink composition and colored ink compositions.




When the driving force of a drive motor


6


is transmitted to the carriage


3


via a plurality of gears (not shown) and a timing belt


7


, the carriage


3


, on which the recording head units


1


A and


1


B are mounted, is moved along the carriage shaft


5


. Further provided for the main body


4


, along the carriage shaft


5


, is a platen


8


to which a recording sheet S, which is a recording medium such as paper, is supplied by a feed roller (not shown) and is thereafter conveyed while being held against the platen


8


.




As is described above, according to the invention, since the neutral plane is positioned inside the piezoelectric film when the piezoelectric element is driven, the deforming efficiency of the piezoelectric film can be increased, and accordingly, the ink ejection efficiency can be improved. As a result, the drive voltage applied to the piezoelectric element can be reduced. And further, especially when the neutral plane is positioned inside a brittle material, when the piezoelectric element is driven the destruction and the deterioration of the brittle material is prevented.



Claims
  • 1. An ink jet recording head, comprising:a pressure generating chamber communicating with a nozzle orifice from which ink is to be ejected; a vibration plate constituting at least a part of the pressure generating chamber; and a piezoelectric element including: a lower electrode constituting at least a part of the vibration plate; a piezoelectric layer formed on the lower electrode; and an upper electrode formed on the piezoelectric layer, wherein an active part of the piezoelectric element for actuating the vibration plate to eject the ink from the nozzle orifice is situated so as to face the pressure generating chamber; wherein a neutral plane of the actuation of the piezoelectric element is located in the vibration plate; and wherein the following relationship is satisfied:EsD2>Efd2 whereEf: Young's modulus for the piezoelectric film and the upper electrode film Es: Young's modulus for the vibration plate d: total thickness of the piezoelectric film and the upper electrode D: thickness of the vibration plate.
  • 2. The ink jet recording head as set forth in claim 1, wherein EsD2 is 1 to 50 times as large as Efd2.
  • 3. The ink jet recording head as set forth in claim 1, wherein the tensile stress of the lower electrode is greater than the stress of the piezoelectric layer.
  • 4. The ink jet recording head as set forth in claim 3, the stress of the piezoelectric layer is tensile stress, andwherein the tensile stress of the lower electrode is one to three times as large as the tensile stress of the piezoelectric layer.
  • 5. The ink jet recording head as set forth in claim 1, wherein the tensile stress of the upper electrode is greater than the stress of the piezoelectric layer.
  • 6. The ink jet recording head as set forth in claim 5, wherein the stress of the piezoelectric layer is tensile stress, andwherein the tensile stress of the upper electrode is one to three times as large as the tensile stress of the piezoelectric layer.
  • 7. The ink jet recording head as set forth in claim 1, wherein the thickness of the vibration plate is thicker than at least a total thickness of the active part of the piezoelectric film and the upper electrode.
  • 8. The ink jet recording head as set forth in claim 7, further comprising an insulating layer formed on the piezoelectric element,wherein the thickness of the vibration plate is thicker than a total thickness of the active part of the piezoelectric film, the upper electrode and the insulating layer.
  • 9. The ink jet recording head as set forth in claim 7, wherein the relationship is satisfied in the active part of the piezoelectric element.
  • 10. The ink jet recording head as set forth in claim 1, wherein the vibration plate includes at least either a metal oxide film or a brittle film, and wherein the neutral plane of the actuation of the piezoelectric element is located in the metal oxide film or in the brittle material film.
  • 11. The ink jet recording head as set forth in claim 10, wherein the brittle material film is made of zirconium oxide.
  • 12. The ink jet recording head as set forth in claim 10, wherein the metal oxide film is made of silicon oxide.
  • 13. The ink jet recording head as set forth in claim 1, wherein the pressure generating chamber is formed in a monocrystalline silicon substrate by anisotropic etching, and the laminated structure of the piezoelectric element is formed by using a film formation technique and a lithographic process.
  • 14. The ink jet recording head as set forth in claim 1, wherein the relationship is satisfied in the active part of the piezoelectric element.
  • 15. The ink jet recording head as set forth in claim 1, wherein the vibration plate is made of a ductile material.
  • 16. The ink jet recording head as set forth in claim 15, wherein the vibration plate and the lower electrode is made of the same material.
  • 17. An ink jet recording apparatus, comprising the ink jet recording head as set forth in any of the claims 1 to 16.
Priority Claims (2)
Number Date Country Kind
11-040686 Feb 1999 JP
2000-006598 Jan 2000 JP
US Referenced Citations (3)
Number Name Date Kind
3438021 Nelkin et al. Apr 1969 A
4730197 Raman et al. Mar 1988 A
5530465 Hasegawa et al. Jun 1996 A
Foreign Referenced Citations (3)
Number Date Country
0 738 599 Oct 1996 EP
0890440 Jan 1999 EP
5-286131 Nov 1993 JP
Non-Patent Literature Citations (2)
Entry
The online materials information resource [Online], [retrieved on Jun. 27, 2001] Retrieved from the internet:<http://www.matweb.com/SpecificMaterial.asp?bassnum=CCHAN3&group=General>.*
The online materials information resource [Online], [retrieved on Jun. 27, 2001] Retrieved from the internet:<http://www.matweb.com/SpecificMaterial.asp?bassnum=MEPt00&group=General>.