Claims
- 1. A substrate for an ink jet recording head, comprising:
- a substrate plate, said substrate plate having a first conduction type semiconductor of a low impurity concentration;
- a plurality of electrothermal transducers for generating energies to be applied to an ink, each of said plurality of electrothermal transducer having a pair of wiring electrodes electrically connected to that said electrothermal transducer;
- a plurality of functional devices, each said functional device being electrically connected to a one of said electrothermal transducers to drive that said one electrothermal transducer, said one electrothermal transducer and said functional device being formed commonly on or in said substrate plate, each of said plurality of functional devices including:
- a pair of major electrode regions arranged to be separated from each other in said substrate plate, said pair of major electrode regions being composed of a second conduction type semiconductor and having a lower-side;
- a control electrode region so arranged to surround a lower-side of one of said pair of major electrode regions, and said control electrode being composed of a first conduction type semiconductor of a higher impurity concentration than the impurity concentration of said substrate plate;
- a first insulating layer arranged on said control electrode region and having a film thickness of 100 .ANG. to 1000 .ANG.; and
- a second insulating layer arranged on a region other than said region on which said first insulating layer is arranged and having a film thickness of at least 5000 .ANG.,
- wherein said one of said major electrode regions is electrically connected to one of said pairs of said wiring electrodes, the other major electrode region being used for a high voltage as compared with said one of said major electrode regions, said plurality of electrothermal transducers being driven by electric signals that flow between said pairs of major electrode regions.
- 2. A substrate as claimed in claim 1, further comprising a guard ring region disposed between said functional devices, said guard ring regions having the same conduction type semiconductor as that of said substrate plate and having a higher impurity concentration than the impurity concentration of said substrate plate.
- 3. A substrate as claimed in claim 2, wherein said plurality of energy generating members are for generating thermal energies in correspondency with driving signals from said plurality of functional devices, said thermal energies causing film boiling in ink.
- 4. A substrate as claimed in claim 1, wherein said plurality of energy generating members are provided to generate thermal energies in correspondency with driving signals from said plurality of functional devices, said thermal energies causing film boiling in ink.
- 5. A recording head comprising:
- a fluid ejection outlet part including an ink ejection outlet; and
- a substrate comprising:
- a substrate plate having a first conduction type semiconductor of a low impurity concentration;
- a plurality of electrothermal transducers for generating energies to be applied to an ink in said ejection outlet part, each of said plurality of electrothermal transducers having a pair of wiring electrodes electrically connected to that said electrothermal transducer;
- a plurality of functional devices, each of said functional devices being electrically connected to a one of said electrothermal transducers for driving said one electrothermal transducer, each said electrothermal transducer and said functional device being formed commonly on or in said substrate plate, each of said plurality of functional devices including;
- a pair of major electrode regions arranged to be separated from each other in said substrate plate, said pair of major electrode regions being composed of a second conduction type semiconductor and having a lower-side;
- a control electrode region so arranged to surround a lower-side of one of said pair of major electrode regions, and said control electrode being composed of a first conduction type semiconductor of a higher impurity concentration than the impurity concentration of said substrate plate;
- a first insulating layer arranged on said control electrode region and having a film thickness of 100 .ANG. to 1000 .ANG.; and
- a second insulating layer arranged on a region other than said region on which said first insulating layer is arranged and having a film thickness of at least 5000 .ANG.;
- wherein said one of said major electrode regions is electrically connected to one of said pairs of said wiring electrodes, the other major electrode region being used for a high voltage as compared with said one of said major electrode regions, said plurality of electrothermal transducers being driven by electric signals that flow between said pairs of major electrode regions.
- 6. A recording head as claimed in claim 5, further comprising a guard ring region disposed between said functional devices, said guard ring region having the same conduction type semiconductor as that of said substrate plate and having a higher impurity concentration than the impurity concentration of said substrate plate.
- 7. A recording head as claimed in claim 6, wherein said plurality of energy generating members are for generating thermal energies in correspondency with driving signals from said plurality of functional devices, said thermal energies cause film boiling in ink and thereby eject ink from said ink ejection outlet.
- 8. A recording head as claimed in claim 6, wherein each of said control electrodes of said plurality of functional devices is grounded.
- 9. A recording head as claimed in claim 5, wherein said plurality of energy generating members are for generating thermal energies in correspondency with driving signals from said plurality of functional devices, said thermal energies cause film boiling in ink and thereby eject ink from said ink ejection outlet.
- 10. A recording head as claimed in claim 5, wherein each of said control electrodes of said plurality of functional devices is grounded.
- 11. An ink jet recording system comprising:
- a recording head having a substrate and a fluid ejection outlet part including an ink ejection outlet, said substrate including;
- a substrate plate having a first conduction
- type semiconductor of a low impurity concentration;
- a plurality of electrothermal transducers for generating energies to be applied to the ink in said ejection outlet part, each of said plurality of electrothermal transducers having a pair of wiring electrodes electrically connected to that said electrothermal transducer;
- a plurality of functional devices, each said functional device being electrically connected to a one of said electrothermal transducers to drive that said electrothermal transducer, said one electrothermal transducer and said functional device being formed commonly on or in said substrate plate, each of said plurality of functional devices including;
- a pair of major electrode regions arranged to be separated from each other in said substrate plate, said pair of major electrode regions being composed of a second conduction type semiconductor and having a lower-side;
- a control electrode region so arranged to surround a lower-side of one of said pair of major electrode regions, and said control electrode being composed of a first conduction type semiconductor of a higher impurity concentration than the impurity concentration of said substrate plate;
- a first insulating layer arranged on said control electrode region and having a film thickness of 100 .ANG.to 1000 .ANG.; and
- a second insulating layer arranged on a region other than said region on which said first insulating layer is arranged and having a film thickness of at least 5000 .ANG.;
- wherein said one of said major electrode regions is electrically connected to one of said pairs of said wiring electrodes, the other major electrode region being used for a high voltage as compared with said one of said major electrode regions, said plurality of electrothermal transducers being driven by electric signals that flow between said pairs of major electrode regions;
- ink feed means for supplying ink into said recording head; and
- transport means for carrying a recording medium to a recording position of said recording head.
- 12. An ink jet recording system as claimed in claim 11, further comprising a guard ring region disposed between said functional devices, said guard ring region having the same conduction type semiconductor as that of said substrate plate and having a higher impurity concentration than the impurity concentration of said substrate plate.
- 13. An ink jet recording system as claimed in claim 12, wherein said plurality of energy generating members are for generating thermal energies in correspondency with driving signals from said plurality of functional devices, said thermal energies cause film boiling in ink and thereby eject ink from said ink ejection outlet.
- 14. An ink jet recording system as claimed in claim 12, wherein each of said control electrodes of said plurality of functional devices is grounded.
- 15. An ink jet recording system as claimed in claim 11, wherein said plurality of energy generating members are for generating thermal energies in correspondency with driving signals from said plurality of functional devices, said thermal energies cause film boiling in ink and thereby eject ink from said ink ejection outlet.
- 16. An ink jet recording system as claimed in claim 11, wherein each of said control electrodes of said plurality of functional devices is grounded.
- 17. A method of fabricating a substrate for a recording head, said substrate including a substrate plate; a plurality of electrothermal transducers for generating energies to be applied to an ink, each of said plurality of electrothermal transducers having a pair of wiring electrodes electrically connected to that said electrothermal transducer; and a plurality of functional devices, each said functional device being electrically connected to a one of said electrothermal transducers to drive that said one electrothermal transducer, said one electrothermal transducer and said functional device being formed commonly on or in said substrate plate, said method comprising the steps of:
- preparing said substrate plate, said substrate plate having a first conduction type semiconductor of a low impurity concentration;
- forming a high impurity concentration region of said first conduction type in said substrate plate, said high impurity concentration region having a higher impurity concentration than the impurity concentration of said substrate plate;
- forming a pair of major electrode regions of a second conduction type semiconductor in said higher impurity concentration region and at a position remote from said high impurity concentration region in said substrate plate;
- providing a control electrode between said pair of major electrodes by forming said pair of major electrodes;
- forming a first insulating layer on said control electrode, said first insulating layer having a film thickness of 100 .ANG. to 1000 .ANG.;
- forming a second insulating layer arranged on a region other than said region on which said first insulating layer is arranged and having a film thickness of at least 5000 .ANG.;
- forming a wiring electrode for controlling a current flowing between said pair of major electrodes by applying a control voltage to said control electrode region through said insulating layer; and
- connecting each pair of major electrode regions to one of said pairs of wiring electrodes electrically connected to said plurality of electrothermal transducers.
- 18. A method as claimed in claim 17, further comprising the step of forming a guard ring region between said functional devices, said guard ring region having the same conduction type semiconductor as that of said substrate plate and having a higher impurity concentration than the impurity concentration of the substrate plate.
- 19. A method as claimed in claim 18, wherein said plurality of energy generating members are provided to generate thermal energies in correspondency driving signals from said plurality of functional devices, said thermal energies causing film boiling.
- 20. A method as claimed in claim 18, wherein said higher impurity concentration region and said major electrode region formed in said higher impurity concentration region are formed by a double diffusion process.
- 21. A method as claimed in claim 17, wherein said plurality of energy generating members are for generating thermal energies in correspondency with driving signals from said plurality of functional devices, said thermal energies causing film boiling.
- 22. A method as claimed in claim 17, wherein said higher impurity concentration region and said major electrode region formed in said higher impurity concentration region are formed by a double diffusion process.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2-19320 |
Jan 1990 |
JPX |
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Parent Case Info
This application is a continuation of application Ser. No. 08/106,164 filed Dec. 28, 1992, now abandoned, which is a continuation of application Ser. No. 07/646,290 filed Jan. 28, 1991, now abandoned.
US Referenced Citations (19)
Foreign Referenced Citations (1)
Number |
Date |
Country |
369347 |
Oct 1989 |
EPX |
Continuations (2)
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Number |
Date |
Country |
Parent |
106164 |
Dec 1992 |
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Parent |
646290 |
Jan 1991 |
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