This application claims the benefit of Korean Patent Application No. 2004-93288, filed Nov. 15, 2004 and Korean Patent Application No. 2005-18345, filed Mar. 4, 2005, the disclosures of which are hereby incorporated herein by reference in their entirety.
1. Field of the Invention
The present general inventive concept relates to an inkjet print head and a method of manufacturing the same, and more particularly, to an inkjet print head mounted on an inkjet printer to eject ink in fine droplets and a method of manufacturing the same.
2. Description of the Related Art
A conventional inkjet print head ejects fine droplets of ink onto a surface of a recording medium through a nozzle to obtain a desired image. The inkjet print head is generally classified, depending on a pressure generating element, as a thermal head type for generating bubbles using heat applied to the ink through an electro-thermal transducer or a piezoelectric head type for generating bubbles in the ink using pressure applied to the ink through an electro-mechanical transducer.
Regarding the thermal head type, current is applied to a heat resistor to heat the ink to a temperature of hundreds of degrees in order to boil the ink, thereby generating the bubbles. As the bubbles expand, the ink that is temporarily stored in an ink chamber is pressurized and is ejected through the nozzle.
A thermal inkjet print head typically has several hundreds of densely integrated nozzles in order to increase dots per inch (DPI).
The thermal inkjet print head is manufactured by forming a plurality of layers on a silicon substrate. Specifically, a logic region for controlling current supplied to the heat resistor used to operate the inkjet print head is formed on a wafer, and then an interlayer dielectric (ILD) layer, a metal interconnection layer, and an intermetal dielectric (IMD) layer are sequentially deposited on the logic region. Thereafter, an ink-feed hole and a nozzle are formed to extend through the layers, thereby completing the inkjet print head.
In this process, the interlayer dielectric layer should have a high degree of flatness since it is formed directly on the logic region. For this reason, conventional interlayer dielectric layers are generally made of boron phosphorus silicate glass (BPSG) having a high viscosity.
Since the BPSG has moisture absorption properties and the interlayer dielectric layer has an end that is typically exposed to the ink-feed hole to be in direct contact with the ink, the BPSG tends to absorb moisture from the ink. As a result, problems such as interface de-lamination, corrosion and electrical short-circuit of the metal interconnection layer and the heater, device malfunction in the logic region, etc., are generated. Such problems deteriorate characteristics of the inkjet print head and shorten its lifespan.
The present general inventive concept provides an inkjet print head and a method of fabricating the same having an ink absorption passage that is blocked from an ink-feed hole.
Additional aspects and advantages of the present general inventive concept will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present general inventive concept.
The foregoing and/or other aspects of the present general inventive concept are achieved by providing an inkjet print head including: a substrate having an ink-feed hole, an interlayer dielectric layer formed around the ink-feed hole on the substrate, at least one metal layer formed on the interlayer dielectric layer, and an anti-moisture part formed between the ink-feed hole and the at least one metal layer to prevent ink moisture in the ink-feed hole from contacting the at least one metal layer.
A logic region may be formed on the substrate, and the anti-moisture part may be formed between the ink-feed hole and the logic region.
The anti-moisture part may be formed as an anti-moisture layer filling in a portion of the interlayer dielectric layer.
The interlayer dielectric layer may comprise boron phosphorus silicate glass.
The anti-moisture layer may comprise one of stainless steel, nickel, monel, hastelloy, lead, aluminum, tin, titanium, tantalum, and any alloy thereof.
The at least one metal layer may include a first metal interconnection layer, a second metal interconnection layer in contact with the first metal interconnection layer, and a heat resister layer in contact with the second metal interconnection layer to generate pressure.
The substrate may include a field oxide layer, the interlayer dielectric layer formed on the field oxide layer, the first metal interconnection layer formed on the interlayer dielectric layer, an intermetal dielectric layer formed on the first metal interconnection layer, the second metal interconnection layer and the heat resistor layer formed on the intermetal dielectric layer, and a passivation layer formed on the second metal interconnection layer and the heat resistor layer.
The anti-moisture part may include a trench formed around the ink-feed hole and extending from the passivation layer to the substrate, and an anti-moisture layer filling the trench.
The passivation layer and the anti-moisture layer may be formed of tantalum.
The passivation layer may include a metal passivation layer and an anti-cavitation layer, and the anti-moisture layer may be formed together with the metal passivation layer and the anti-cavitation layer.
The metal passivation layer may comprise silicon nitride, and the anti-cavitation layer may comprise tantalum.
The passivation layer may be formed on the at least one metal layer, and the anti-moisture part may include a step formed around the ink-feed hole toward the substrate and an anti-moisture layer formed on the step together with the passivation layer.
The passivation layer may include a metal passivation layer made of silicon nitride and an anti-cavitation layer made of tantalum deposited on the metal passivation layer.
The anti-moisture layer may be formed of a layered structure of silicon nitride and tantalum.
The foregoing and/or other aspects of the present general inventive concept are also achieved by providing a method of fabricating an inkjet print head including: forming an interlayer dielectric layer on a substrate, forming a metal layer on the interlayer dielectric layer, forming an intermetal dielectric layer on the metal layer, etching the intermetal dielectric layer and the interlayer dielectric layer to form a trench on a surface of the substrate around a region where an ink-feed hole is to be formed, filling the trench in the intermetal dielectric layer and the interlayer dielectric layer to form a passivation layer on the metal layer and an anti-moisture layer in the trench, forming at least one nozzle over the passivation layer, and forming the ink-feed hole to extend through the substrate adjacent to the anti-moisture layer.
The interlayer dielectric layer may comprise boron phosphorus silicate glass.
The passivation layer may include an anti-cavitation layer made of tantalum.
The passivation layer may include a metal passivation layer formed of silicon nitride under the anti-cavitation layer.
The foregoing and/or other aspects of the present general inventive concept are also achieved by providing a method of fabricating an inkjet print head including: forming an interlayer dielectric layer on a substrate, forming a trench in the interlayer dielectric layer around a region where an ink-feed hole is to be formed, filling the trench in the interlayer dielectric layer with an anti-moisture material to form an anti-moisture layer, forming at least one metal layer on the interlayer dielectric layer around the anti-moisture layer, forming a passivation layer on the at least one metal layer, forming at least one nozzle over the passivation layer, and forming the ink-feed hole to extend through the substrate adjacent to the anti-moisture layer.
The interlayer dielectric layer may comprise boron phosphorus silicate glass.
The anti-moisture material may comprise one of stainless steel, nickel, monel, hastelloy, lead, aluminum, tin, titanium, tantalum, and any alloy thereof.
The foregoing and/or other aspects of the present general inventive concept are also achieved by providing a method of fabricating an inkjet print head including: forming an interlayer dielectric layer on a substrate, forming at least one metal layer on the interlayer dielectric layer, partially forming an ink-feed hole in the interlayer dielectric layer to extend to a surface of the substrate adjacent to the at least one metal layer; forming a passivation layer on the at least one metal layer and having an anti-moisture part recessed between the at least one metal layer into the partially formed ink-feed hole, forming a nozzle layer and at least one nozzle over the passivation layer, and etching the substrate to make the partially formed ink-feed hole extend through the substrate.
An intermetal dielectric layer may be formed between the at least one metal layer and the passivation layer.
The interlayer dielectric layer may comprise boron phosphorus silicate glass.
The passivation layer may include an anti-cavitation layer made of tantalum, and a metal passivation layer formed of silicon nitride under the anti-cavitation layer.
The anti-moisture part may be made of tantalum.
The anti-moisture part may include silicon nitride formed under the tantalum.
The ink-feed hole may have a larger width in the interlayer dielectric and the at least one metal layers on the substrate than within the substrate.
These and/or other aspects and advantages of the present general inventive concept will become apparent and more readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
Reference will now be made in detail to the embodiments of the present general inventive concept, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout. The embodiments are described below in order to explain the present general inventive concept by referring to the figures. In the drawings, the thickness of the layers and regions may be exaggerated for illustration purposes. In addition, while
Referring to
The logic region 130 may be formed through a complementary metal-oxide-semiconductor (CMOS) process. The CMOS process is disclosed in Korean Patent Laid-open Publication No. 2004-54432, filed by the present applicant.
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Although not illustrated, the first metal interconnection layer 151 may be connected to the logic region 130. An intermetal dielectric layer 170 is formed on the first metal interconnection layer 151. The intermetal dielectric layer 170 may be formed of oxide using a plasma enhanced CVD (PECVD) method.
A via-hole 153 is formed through the intermetal dielectric layer 170 to the first metal interconnection layer 151. The via-hole 153 may be filled with tungsten (W) using a low-pressure CVD (LPCVD) method or an atomic layer deposition (ALD) method.
The second metal interconnection layer 152 and the heat resistor layer 160 are formed on the intermetal dielectric layer 170 to be in contact with the first metal interconnection layer 151 through the via-hole 153. The second metal interconnection layer 152 and the heat resistor layer 160 may be formed together as a single layer or individually as separate layers on the intermetal dielectric layer 170.
The heat resistor layer 160 may be formed of a high resistance metal such as tantalum or tungsten, an alloy including a high resistance metal such as tantalum nitride (TaN) or tantalum aluminum (TaAl), or polysilicon doped with impurity ions. The second metal interconnection layer 152 and the heat resistor layer 160 may be formed using the sputtering method. The heat resistor layer 160 may include a plurality of heat resistors arranged in two rows. Other arrangements of the heat resistor layer 160 may alternatively be used with the present general inventive concept.
A trench 183 is formed through the intermetal dielectric layer 170, the interlayer dielectric layer 142, and the field oxide layer 141 to surround an area where the ink-feed hole 101 (see
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The passivation layer 180 may include a metal passivation layer 181 made of silicon nitride (SiNx) using the PECVD method. The metal passivation layer 181 functions to protect the first metal interconnection layer 151, the second metal interconnection layer 152, and the heat resistor layer 160 formed thereunder. When the metal passivation layer 181 is formed in the trench 183, the metal passivation layer 181 may be formed to have a height that extends from the substrate 100 at the bottom of the trench 183 to a height of the field oxide layer 141, while conforming to a profile of the trench 183.
In addition, as illustrated in
Therefore, a silicon nitride layer 191 that corresponds to the metal passivation layer 181 and a tantalum layer 192 that corresponds to the anti-cavitation layer 182 are sequentially formed in the trench 183 to form an anti-moisture layer 190 disposed in a perpendicular direction between the ink-feed hole 101 (see
Generally, tantalum is known to minimize corrosion and interface de-lamination caused by moisture. That is, oxidation is not likely to be generated, and erosion is not likely to result in the tantalum from excessive acid. Therefore, the tantalum performs excellent anti-moisture functions, since corrosion is rarely generated even when the anti-moisture layer 190 is directly exposed to ink. As a result, the anti-moisture layer 190 can effectively block moisture that would be absorbed through an end of the interlayer dielectric layer 142 is the interlayer dielectric layer 142 is exposed to the ink-feed hole 101.
As illustrated in
A chamber layer 110 is then formed. The chamber layer 110 is applied by forming a sacrificial layer 124 in the ink-feed hole 101 and on a portion of the passivation layer 180. A photosensitive dry film is then hot-pressed onto another portion of the passivation layer 180 using a lamination method. The photosensitive dry film may be a product such as VACREL or RISTON available from DuPont Inc.
A nozzle layer 120 is then formed on the chamber layer 110. Nozzles 121 are formed in the nozzle layer 120. The nozzle layer 120 may be formed by a nickel electrolytic plating process, a micro punching process, or a polishing process. The nozzles 121 formed in the nozzle layer 120 are arranged to be located directly over chambers 111 and the heat resistor layers 160.
The remaining layer 102 left in the ink-feed hole 101 is then etched to extend the ink-feed hole 101 through the substrate 100, and the sacrificial layer 124 is removed to form an ink passage 123, thereby completing the inkjet print head as illustrated in
The remaining layer 102 may be removed through a bottom surface of the substrate 100 using a lithography process and an etching process, and may be removed before or after removing the sacrificial layer 124.
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A passivation layer 280 (see
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The anti-moisture layer 390 is formed by forming a photo-mask such that the trench 343 is exposed through the interlayer dielectric layer 342, and then filling the trench 343 with the corrosion resistant metal using a sputtering method. Since a first metal interconnection layer 351 is formed on the interlayer dielectric layer 342 after removing the photo-mask (and after the corrosion resistant metal is deposited in the trench 343), it is possible to employ a planarization process using a chemical-mechanical polishing (CMP) method to planarize a surface of the interlayer dielectric layer 342 with a surface of the anti-moisture layer 390.
As illustrated in
The second metal interconnection layer 352 and the heat resistor layer 360, which generate pressure in the inkjet print head, may be formed together as a single layer or individually as separate layers on the intermetal dielectric layer 370. A passivation layer 380 is then formed on the intermetal dielectric layer 370 to cover the heat resistor layer 360 and the second metal interconnection layer 352. The passivation layer 380 includes a metal passivation layer 381 made of silicon nitride (SiNx) using a PECVD method, and an anti-cavitation layer 382 formed of tantalum on the metal passivation layer 381. The ink-feed hole 301 (see
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Although embodiments of the present general inventive concept are described as having first and second metal interconnection layers, an interlayer dielectric layer, an intermetal dielectric layer, etc., it should be understood that other conductive, insulative, and dielectric layers may be used with the present general inventive concept.
As can be seen from the foregoing description, the inkjet print head and the method of fabricating the same of various embodiments of the present general inventive concept are capable of preventing problems such as de-lamination between layers, electrical short-circuit, circuit malfunction, and corrosion of metal interconnection layers, by preventing penetration of ink moisture from layers having absorbent characteristics into the metal interconnection layers, a logic region, or a pressure driving part. As a result, it is possible to increase the lifespan and reliability of the inkjet print head, as well as to increase productivity and reduce manufacturing cost by increasing yield.
Although various embodiments of the present general inventive concept have been shown and described, it should be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the general inventive concept, the scope of which is defined in the appended claims and their equivalents.
Number | Date | Country | Kind |
---|---|---|---|
2004-93288 | Nov 2004 | KR | national |
2005-18345 | Mar 2005 | KR | national |