InN/InP/TiO2 photosensitized electrode

Abstract

The present invention is a photosensitized electrode which absorbs sunlight to obtain electron-hole pair. The photosensitized electrode is fabricated with simple procedure and has low cost. The electrode has excellent chemical resist to be applied in a solar cell device with enhanced sun-light absorbing ability. The present invention can be applied in an optoelectronic device or a hydrogen generator device too.

Description

BRIEF DESCRIPTIONS OF THE DRAWINGS

The present invention will be better understood from the following detailed description of the preferred embodiment according to the present invention, taken in conjunction with the accompanying drawings, in which

FIG. 1 is a structural view showing a preferred embodiment according to the present invention;

FIG. 2 is a flow view showing the fabricating of the photosensitized electrode;

FIG. 2A, FIG. 2B, FIG. 2C, FIG. 2D and FIG. 2E are views showing step (a), step (b), step (c), step (d), and step (e) of the fabricating of the photosensitized electrode respectively; and

FIG. 3 is a view showing a state of use of the electrode.

Claims

1. An InN (indium nitride)/InP(indium phosphide)/TiO2(titanium oxide) photosensitized electrode, comprising: a substrate;a TiO2 film, said TiO2 film covering on said substrate; anda photosensitive layer, said photosensitive layer comprising an InP photosensitive layer and an InN photosensitive layer, said InP photosensitive layer coating on said TiO2 film, said InN photosensitive layer coating on said InP photosensitive layer.

2. The photosensitized electrode according to claim 1, wherein said substrate is a transparent conductive substrate selected from a group consisting of an indium tin oxide (ITO) glass and an fluorine tin oxide (FTO) glass.

3. The photosensitized electrode according to claim 1, wherein said TiO2 film has a nanoparticle structure.

4. The photosensitized electrode according to claim 3, wherein said nanoparticle has a diameter between 7 nm (nanometer) and 50 nm.

5. The photosensitized electrode according to claim 1, wherein said TiO2 film has a thickness between 100 nm and 100000 nm.

6. The photosensitized electrode according to claim 1, wherein said InP photosensitive layer has a thickness between 1 nm and 10000 nm.

7. The photosensitized electrode according to claim 1, wherein said InN photosensitive layer has a thickness between 1 nm and 10000 nm.

8. The photosensitized electrode according to claim 1, wherein said photosensitive layer absorbs light having a wavelength between 390 nm and 600 nm.

9. The photosensitized electrode according to claim 1, wherein said photosensitive layer absorbs light having an optical bandwidth between 390 nm and 800 nm.

10. The photosensitized electrode according to claim 1, said photosensitized electrode having a fabrication method comprising steps a. placing a substrate in a reaction chamber, said substrate coated with a TiO2 film;b. pasting said TiO2 film with an InP solution having nanoparticles to obtain an InP photosensitive layer;c. introducing hydrazoic acid (HN3) and a compound containing indium into said reaction chamber;d. illuminating said InP photosensitive layer with an ultra violet (UV) light; ande. obtaining an InN photosensitive layer coated on said InP photosensitive layer.

11. The method according to claim 10wherein said compound containing indium is selected from a group consisting of a trimethylindium, a triethylindium, a indium-containing metallo-organic precursor and a combination of indium-containing metallo-organic precursors.

12. The method according to claim 10 wherein said hydrazoic acid is a compound containing indium.

13. The method according to claim 10 wherein a ratio of said HN3 to said compound containing indium is between 1 and 10.

14. The method according to claim 10, wherein said TiO2 film bears a temperature between 600° C. (Celsius degrees) and 900° C.

15. The method according to claim 10, wherein a period of time for processing all steps of said step (a) until step (e) is between 1 hr (hour) and 8 hr.

16. The method according to claim 10, wherein said UV light is obtained from a light source selected from a group consisting of a continuous UV lamp, an excimer laser, a semiconductor laser, a gas laser, a solid-state laser, a liquid laser, a chemical laser and a free-electron laser.