Number | Name | Date | Kind |
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4236120 | White | Nov 1980 | |
4636744 | King et al. | Jan 1987 | |
5101170 | Torazzina et al. | Mar 1992 | |
5153529 | Koda et al. | Oct 1992 | |
5193821 | Brambilla et al. | Mar 1993 |
Entry |
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Article entitled "Channel Length and Width Effects on NMOS Transistor Degradation Under Constant Positive Gate-Voltage Stressing" by Ken Wu, Sam Pan, David Chin, and J. Shaw, Intel Corporation, IDEM 91, IEEE 1991, pp. 735-738. |