The invention relates to a Method for Inspection of flat objects, in particular wafers, comprising the steps of:
In different branches of the industry flat products are inspected for defects with imaging methods. In semiconductor- and solar cell industry these products are, amongst others, wafers. Wafers are discs of semiconductor-, glass-, sheet- or ceramic materials. The wafers are inspected entirely or at least with large portions thereof. Such an inspection is called Macro-inspection. The lateral resolution required for the detection of the interesting defects increases with developments of the general production technique. Typically, resolutions of 30 microns or less in macro-inspection are required for new technologies. At the same time, devices having a high throughput of wafers for inspection are desirable.
Similar objects must be solved in different branches of the industry. In flat panel industry the displays must be inspected for defects in the production. Partly, imaging methods are used for the detection of defects imaging the entire display. When inspecting printed circuit boards in the electronic industry defects are detected with optical methods on series of specimen.
All such applications have in common that there is a need for quick inspection of a high number of objects which are normally of the same kind. Such objects are printed circuit boards, wafers, solar cells, displays and the like. They also have in common that sensors are used for the generation of large images of the objects. The images can be generated with optical imaging systems as well as with point-wise operating sensors depending on the kind of the detectable defects. Optical imaging systems are, for example line and array cameras. Point-wise operating sensors are, for example, detectors for the measurement of the reflection of optical rays, microwaves or acoustic waves. Magnetic sensors may be used also.
Normally, a plurality of wafers or other objects of the same kind are inspected. Known methods use a wafer as a reference object which is for this case as good as possible with preferably no defects. The defect-free wafer provides the “golden image” as a reference. It is, however, also possible to generate the reference image in a different way, such as, for example, with mathematical methods by using repeating structures on a wafer or by using several wafers.
WO 00/04488 (Rudolph) discloses a method for the generation of a reference image by optical inspecting a plurality of known, good wafers. Unknown wafers are then inspected using a model which uses this reference image.
U.S. Pat. No. 4,644,172 (Sandland) discloses an inspection method where a reference image is manually selected and stored during a training. In pre-selected geometries the inspection is carried out and compared to the stored reference image. Average values and standard deviations are formed.
U.S. Pat. No. 7,012,684 B1 (Hunter) describes an inspection device where the individual signature of reflected or scattered images is detected and processed with signatures of different reflected or scattered images to a reference image.
Known methods take an image and compare it to a—however obtained—stored reference image. The generation of the reference image requires much efforts and a manual control, “recipes” are generated which may be used, tor example, to consider information about the position of dies on the wafer. The comparison of alt images of a charge with objects of the same kind is always made with the same reference image due to these required efforts.
It is an object of the invention to improve the quality of the inspection method and to automatize the generation of a reference image. According to an aspect of the invention this object is achieved in that
According to the invention all images for all objects of a series are taken and the reference image is generated only afterwards. The images of the objects of this series is used. A perfect object (tor example a perfect wafer) is not necessary. With this method the individual object is inspected by comparison with the entire group. Abnormalities shown by all objects of the series are not detected thereby, but only individual defects. The reference image can be generated automatically and without any manual processing.
There are often very small structures on the objects provided for inspection. An example of such structures are dies on wafers with structure diameters in the range of microns or sub-microns. Typically used inspection devices with normal detectors resolve sizes in the range of some microns to some tens of microns, such as, for example, 30 microns. The micro structures are, therefore, not resolved by such systems called macro inspection devices. The interesting defects have much larger diameters in the range of mm in certain applications where the selected resolution is sufficient. The intensities of adjacent image points, however, may have possibly steps due to the unresolved microstructures depending on the position of the unresolved microstructure in the image. Such an effect is known from everyday life where an image has rough image points (pixels). In reality straight edges are stepped and smooth transitions have a rough stair-shaped structure. The correct positioning of the images is, therefore, difficult or only possible with insufficient accuracy.
When the objects are positioned for imaging this is effected with a positioning inaccuracy which is larger than the structures present on the object with normal conditions. The inaccuracy of the positioning will, therefore, cause an error when generating the reference image with a common assembly if such structures are not resolved.
According to the invention the object position is, therefore, taken into account by the characterizing features of claim 1.
The moving average can be calculated by adding up the intensity values for each point of the image portion of the image portions within the area of an original image point and allocated to the central point of the image portion. In other words: the correct positioning of the image is effected by mathematical oversampling. All images can be superimposed very accurately in such a way that the unresolved structures lay in the same position. In such a way the accuracy for generating the reference image can be increased.
In a preferred modification of the invention the series is a sub-group of a larger series of objects and each sub-group generates its own reference image. Then the reference image is very close to the images of objects which were generated in the same production and method process in the same time frame. As the reference image is automatically generated, i.e. by mere calculating the amount of reference images which are generated will not matter.
In a further modification the reference image generated for a group can be stored and compared to preceding or following reference images. A principal tendency can be obtained from such a comparison for the entire production cycle of the objects. It can be checked, for example, if entire sub-groups or charges deviate from the overall image of the objects by detecting if and/or how much the reference images vary one from another. In the production of semiconductors, for example, lithographic defects of entire charges or drifting process parameters (layer thicknesses, for example) can be recognized automatically.
The reference image can be generated by averaging the images of a series. However, a median or any other suitable averaging method may be used. Furthermore, any other common preprocessing steps, such as De-Bayering, smoothing, differentiating can be applied depending on the precise detection purpose. The average of all intensity values is calculated at the same point for different objects for calculating the average value of the images at all image points. Accordingly, always the same image point of an image is used for averaging when taking images of identically positioned objects.
Preferably, the object position is taken into account when taking the digital image for generating the reference image. The object position may then slightly vary from object to object. Thereby, even with good positioning of the objects the quality of the reference image can be improved.
Further modifications of the invention are subject matter of the subclaims. An embodiment is described below in greater detail with reference to the accompanying drawings.
The embodiments are described using schematic representations of a wafer. It is understood, however, that real images will have a different appearance where the invention can be, however, applied in the same manner.
A median is calculated for each image point on the surface of the wafer 10 and the corresponding image point on the surface of the other wafers 12, 14, 36, 18, 20, 22, 24, 26, 28 and 30. An average is calculated in a different, alternative embodiment which is not shown here. The image assembled of the median values is shown in
The oversampling is shown in an example with a sharp edge 56 running through the image.
The edge present in reality can be resolved by mathematical oversampling during evaluation.
Then, a new average value is attributed to each cell by moving average over the surrounding of the 5×5 cells. This is shown in
As the value range in the example was selected from 0 to 9 the oversampled image generated in the above described way has a value range from 0 to 5625, The line of the edge 56 can, therefore, be found at the value 5625/2=2812,5. The cell values which are nearest to this value are highlighted in
With such a method it is possible to better localize structures than with raw sensor data. This can be used, for example, when the position of the images are adjusted with respect to each other (registering) and for the detection of defects and deviations. In particular, known algorithms such as edge inspection, feature recognition, pattern matcher can be used better and more accurately for adjustment when using the images processed according to the above described method.
The required moving average calculation (step 2—
The above description was illustrated using a sensor section with the size of 4 columns and 5 lines corresponding to 20 image points. It is understood, however, that real sensors and the images generated thereby are much larger and have sometimes diameters of up to several millions of pixels. Also, different values and curvatures etc. can apply, In particular, the method is also applicable with a line camera, several small sensors and with images assembled from several of such images.
| Number | Date | Country | Kind |
|---|---|---|---|
| 10 2012 101 242.3 | Feb 2012 | DE | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/EP2013/051410 | 1/25/2013 | WO | 00 |