Claims
- 1. A channel FET resistor in the substrate of a monolithic integrated circuit device, said substrate being of a first conductivity type, said channel FET resistor comprising,
- a buried layer region of a second conductivity type in the substrate, said buried layer region being band-shaped with an opening therethrough,
- an epitaxial layer of said second conductivity type on said substrate and over said buried layer,
- an isolation region of said first conductivity type in said epitaxial layer around said buried layer region, said isolation region extending completely through said epitaxial layer thereby to isolate a portion of said epitaxial layer including that portion overlying said buried layer region,
- a channel region of said first conductivity type in said epitaxial layer within that portion isolated by said isolation region and extending completely through said epitaxial layer, through the opening in said buried layer and into said substrate, and
- a surface contact contacting said channel region.
- 2. A channel FET resistor as claimed in claim 1 wherein said first conductivity type is P type and said second conductivity type is N type.
- 3. A channel FET resistor as claimed in claim 1 wherein said channel region is more heavily doped than said substrate.
- 4. A channel FET resistor as claimed in claim 3 wherein said first conductivity type is P type and said second conductivity type is N type.
Parent Case Info
The present application is a division of application U.S. Ser. No. 466,225 filed May 2, 1974, now U.S. Pat. No. 3,886,001.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
3414782 |
Lin et al. |
Dec 1968 |
|
3823353 |
Berger et al. |
Jul 1974 |
|
Non-Patent Literature Citations (2)
Entry |
IBM Tech. Bul. -- vol. 12, No. 12, May 1970 -- Gates p. 2061. |
IBM Tech. Bul. -- vol. 12, No. 12, May 1970 -- Feinberg et al. p. 2049. |
Divisions (1)
|
Number |
Date |
Country |
Parent |
466225 |
May 1974 |
|