Claims
- 1. An integrated circuit, comprising:
- a semiconductor substrate;
- a FET device formed in said substrate, said FET device having source, drain, and gate elements;
- a region of TiSi.sub.2 in each of said source, drain, and gate elements; and
- a Schottky diode comprising a layer comprising a metal in said substrate, wherein one of said TiSi.sub.2 regions in said source and drain elements includes a region of platinum silicide.
Parent Case Info
This is a divisional of application Ser. No. 08/316,588 filed on Sep. 29, 1994, now abandoned.
US Referenced Citations (6)
Divisions (1)
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Number |
Date |
Country |
Parent |
316588 |
Sep 1994 |
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