This application claims priority under 35 U.S.C. §119 to Korean Patent Application Nos. 10-2016-0073291, filed on Jun. 13, 2016, and 10-2017-0030769, filed on Mar. 10, 2017, in the Korean Intellectual Property Office, the disclosures of which are incorporated by reference herein in their entireties.
Exemplary embodiments of the inventive concept relate to a semiconductor circuit, and more specifically, to an integrated circuit, a mobile device including the same, and a hacking preventing method thereof.
With developments in system hacking techniques, hackers may attempt to extract significant information (e.g., private information, financial information, and technical know-how) from systems through various methods. A system may include an attack detection circuit that helps prevent hacking by detecting abnormal conditions in associated circuitry. A hacker may attempt to make the attack detection circuit weak and ineffective by physically damaging a chip therein or through a laser fault attack, thus circumventing the security provided by the attack detection circuit.
According to an exemplary embodiment of the inventive concept, an integrated circuit may include an internal circuit and an attack detection circuit including at least one sensor configured to sense at least one abnormal condition of the internal circuit. The at least one abnormal condition is a parameter of the internal circuit that is outside of a predetermined range. The attack detection circuit is configured to sense an external attack on the internal circuit based on the at least one abnormal condition. The attack detection circuit further includes a security built-in-self-test (BIST) circuit configured to sense a physical attack on the attack detection circuit.
According to an exemplary embodiment of the inventive concept, an integrated circuit may include an internal circuit and an attack detection circuit configured to sense an external attack on the internal circuit. The attack detection circuit may include a plurality of sensors configured to sense different abnormal conditions, a plurality of built-in-self-test (BIST) units corresponding to the plurality of sensors, a comparator, and a detector. Each of the plurality of BIST units is configured to output one of a voltage from a corresponding sensor, a ground voltage, and a power supply voltage as an output value. The comparator compares each of the output values of the plurality of BIST units with a reference voltage and outputs at least one result value. The detector generates an attack notification signal in response to the at least one result value of the comparator.
According to an exemplary embodiment of the inventive concept, a mobile device may include an application processor, a memory that stores data used for an operation of the application processor, and a security chip that performs a security operation of the application processor. The security chip may include an attack detection circuit including a security built-in-self-test (BIST) circuit that senses a physical attack or a laser fault attack on the attack detection circuit.
According to an exemplary embodiment of the inventive concept, an operating method of an attack detection circuit configured to sense an external attack on an internal circuit may include receiving a built-in-self-test (BIST) enable signal, performing a security BIST operation in response to the security BIST enable signal, determining a normal state or an attack state of the attack detection circuit using a result of the security BIST operation, sending an attack notification signal to the internal circuit when the attack detection circuit is in the attack state, and shutting down the internal circuit, resetting the internal circuit, or deleting data used in the internal circuit, in response to the attack notification signal. The normal state of the attack detection circuit is a state in which a physical attack on the attack detection circuit has not occurred, and the attack state of the attack detection circuit is a state in which the physical attack on the attack detection circuit has occurred.
The above and other objects and features of the inventive concept will become apparent by describing in detail exemplary embodiments thereof with reference to the accompanying drawings.
Exemplary embodiments of the inventive concept will be described more fully hereinafter with reference to the accompanying drawings. Like reference numerals may refer to like elements throughout this application.
Exemplary embodiments of the inventive concept provide an integrated circuit that protects an attack detection circuit from physical damage or a laser fault attack, a mobile device including the same, and an operating method thereof.
The integrated circuit 100 may be included in, for example, security products such as a smart card, an embedded security element (eSE), a universal subscriber identity module (USIM) card, a financial security and identification (FSID) card, a mobile trusted platform module (TPM), a brand protection product, or an IoT (internet of things) wearable device product.
The internal circuit 110 may be implemented to provide at least one security function to the above-described security products. For example, the security function may be a function associated with confidentiality of data, integrity, availability, or access control and authority of a user. According to an exemplary embodiment of the inventive concept, the internal circuit 110 may be implemented with one chip. For example, the internal circuit 110 may be implemented with a system-on-chip (SoC).
To protect the internal circuit 110 from an external attack, the attack detection circuit 120 may be implemented to detect whether the internal circuit 110 operates abnormally, e.g., due to hacking. For example, the attack detection circuit 120 may be implemented to detect an attack on the internal circuit 110 using a glitch, a voltage, a temperature, a frequency, etc.
The attack detection circuit 120 may include a security built-in-self-test (BIST) circuit 122. The security BIST circuit 122 may be implemented to detect whether all or a part of a configuration of the attack detection circuit 120 is physically damaged or subjected to a laser fault attack.
Additionally, the security BIST circuit 122 may be implemented to be activated in response to a BIST enable signal BEN. According to an exemplary embodiment of the inventive concept, the BIST enable signal BEN may be transmitted from the internal circuit 110 periodically or randomly. For example, after the integrated circuit 100 is powered on and a reference time elapses therefrom, the BIST enable signal BEN may be generated periodically. According to an exemplary embodiment of the inventive concept, the BIST enable signal BEN may be generated according to an internal policy of the integrated circuit 100. According to an exemplary embodiment of the inventive concept, the BIST enable signal BEN may be generated according to a predetermined policy in the attack detection circuit 120 itself.
The attack detection circuit 120 may be implemented to generate an attack notification signal when detecting an external attack on the internal circuit 110 or the attack detection circuit 120. The internal circuit 110 may be reset or shut down in response to the attack notification signal. Additionally, the internal circuit 110 may delete significant data, which should not be leaked to the outside, in response to the attack notification signal.
According to an exemplary embodiment of the inventive concept, the integrated circuit 100 may detect an external attack on the attack detection circuit 120 as well as the internal circuit 110, and may perform a protection function based on the detection result, thus increasing security thereof.
The abnormal condition sensing circuit 121 may be implemented to sense various abnormal conditions of the internal circuit 110. For example, the abnormal conditions may include a voltage, a current, a frequency, a temperature, etc. that are out of a normal range. The abnormal condition sensing circuit 121 may include a plurality of abnormal condition detectors that sense the abnormal conditions. According to an exemplary embodiment of the inventive concept, sensing results of the abnormal condition sensing circuit 121 may be provided to the security BIST circuit 122.
The security BIST circuit 122 may include a floating switch 122-1 and a pull-up switch 122-2.
According to an exemplary embodiment of the inventive concept, the floating switch 122-1 may be implemented to float an output terminal of the security BIST circuit 122. For example, when the floating switch 122-1 is turned off in response to an inverted BIST enable signal BENB, an output terminal of the abnormal condition sensing circuit 121 may be isolated from the output terminal of the security BIST circuit 122. Additionally, when the floating switch 122-1 is turned on in response to the inverted BIST enable signal BENB, the output terminal of the abnormal condition sensing circuit 121 may be connected to the output terminal of the security BIST circuit 122.
According to an exemplary embodiment of the inventive concept, the pull-up switch 122-2 may be turned on in response to the BIST enable signal BEN to electrically connect a power terminal to the output terminal of the security BIST circuit 122. The power terminal is provided with a power supply voltage VDD. Additionally, the pull-up switch 122-2 may be turned off in response to the BIST enable signal BEN to electrically disconnect the power terminal and the output terminal of the security BIST circuit 122.
The security BIST circuit 122 may detect whether the attack detection circuit 120 operates normally, in response to the BIST enable signal BEN. For example, when the pull-up switch 122-2 is turned on in response to the BIST enable signal BEN, the comparator 123 may compare the power supply voltage VDD, compulsorily supplied to the output terminal of the security BIST circuit 122, with a reference voltage VREF. A comparison result value of the comparator 123 may include information indicating whether the attack detection circuit 120 is operating normally.
For descriptive convenience, the security BIST circuit 122 is illustrated in
The detector 124 may be implemented to receive at least one output value of the comparator 123 and to determine whether the attack detection circuit 120 is attacked from the outside. For example, if a current output value of the comparator 123 changes compared with a previous output value of the comparator 123 in a previous state, it may be determined that an external attack on the attack detection circuit 120 has not occurred. Here, the previous state is a state in which the floating switch 122-1 is turned on and the pull-up switch 122-2 is turned off. According to an exemplary embodiment of the inventive concept, the previous state may indicate an operation state or an operation mode in which the integrated circuit 100 performs a normal operation.
In contrast, if the current output value of the comparator 123 does not change compared with (e.g., is the same as) the previous output value in the previous state, it may be determined that an external attack on the attack detection circuit 120 has occurred.
In
In
The abnormal frequency sensor 121-1 may be implemented to detect a main clock frequency and to generate a sensing signal when the detected main clock frequency is out of a specified range. The abnormal voltage sensor 121-2 may be implemented to detect a level of an externally supplied voltage and to generate a sensing signal when the detected level of the externally supplied voltage is out of a rated range. The abnormal temperature sensor 121-3 may be implemented to detect a peripheral temperature of the integrated circuit 100 and to generate a sensing signal when the detected peripheral temperature is higher than or lower than a reference range. The light exposure sensor 121-4 may be implemented to generate a sensing signal when a silicon oxide layer used as a protection layer of the integrated circuit 100 is removed and the integrated circuit 100 is exposed to external light. The glitch attack sensor 121-5 may be implemented to detect fluctuations of a power supply voltage and to generate a sensing signal when the power supply voltage changes suddenly. The decapsulation sensor 121-6 may be implemented to generate a detection signal when the integrated circuit 100 is decapsulated.
As illustrated in
The security BIST circuit 122a may include the floating switch 122-1 floating at least one output value (e.g., a sensing signal) of the abnormal condition sensing circuit 121 and the pull-down switch 122-3 connected to a ground terminal. According to an exemplary embodiment of the inventive concept, the floating switch 122-1 in
According to an exemplary embodiment of the inventive concept, the pull-down switch 122-3 may be turned on in response to the BIST enable signal BEN, and the floating switch 122-1 may be turned off in response to the inverted BIST enable signal BENB. According to an exemplary embodiment of the inventive concept, the pull-down switch 122-3 may be turned off in response to the BIST enable signal BEN, and the floating switch 122-1 may be turned on in response to the inverted BIST enable signal BENB.
The security BIST circuit 122a may detect whether the attack detection circuit 120a is operating normally, in response to the BIST enable signal BEN. For example, when the pull-down switch 122-3 of the security BIST circuit 122a is turned on, the comparator 123 may compare the ground voltage GND, compulsorily supplied to the output terminal of the security BIST circuit 122a, with the reference voltage VREF. The comparison result value may indicate whether an external attack is performed on the attack detection circuit 120a.
The security BIST circuit 122 of
The security BIST circuit 122b may include the floating switch 122-1 that is turned on in response to the inverted BIST enable signal BENB, the pull-up switch 122-2 that is turned on in response to a first BIST enable signal BEN1, and the pull-down switch 122-3 that is turned on in response to a second BIST enable signal BEN2. According to an exemplary embodiment of the inventive concept, one of the first BIST enable signal BEN1 and the second BIST enable signal BEN2 may be the BIST enable signal BEN, and the other thereof may be a signal having the ground voltage GND. However, the inventive concept is not limited thereto.
According to an exemplary embodiment of the inventive concept, both the pull-up switch 122-2 and the pull-down switch 122-3 may be turned off when the floating switch 122-1 is turned on in response to the inverted BIST enable signal BENB. According to an exemplary embodiment of the inventive concept, one of the pull-up switch 122-2 and the pull-down switch 122-3 may be turned on when the floating switch 122-1 is turned off in response to the inverted BIST enable signal BENB.
One security BIST circuit 122b is illustrated in
The integrated circuit 100 may start to perform an operation (S110). For example, the integrated circuit 100 may start to perform an operation by booting-up a system including the integrated circuit 100, by providing the integrated circuit 100 with power, or under the control of an external device connected to the integrated circuit 100. According to an exemplary embodiment of the inventive concept, when the integrated circuit 100 starts to perform an operation, the integrated circuit 100 may enter a security BIST mode to perform a security BIST operation. The security BIST operation will be described with reference to further operations below.
For example, the internal circuit 110 of
The security BIST circuit 122 may block output values of the abnormal condition sensing circuit 121 in response to the BIST enable signal BEN. The security BIST circuit 122 may perform the security BIST operation for compulsorily pulling an output terminal (e.g., an attack sensing terminal) of the security BIST circuit 122 up to the power supply voltage VDD or down to the ground voltage GND (S130).
It may be determined whether the attack detection circuit 120 is attacked based on an execution result of the security BIST operation (S140). If the result of the security BIST operation, e.g., a result of comparing a previous output value and a current output value, indicates that a level changes, it may be determined that an external attack on the attack detection circuit 120 has not occurred. In other words, the attack detection circuit 120 is in a normal state. In contrast, if the result of the security BIST operation indicates that the previous output value is maintained (e.g., there is no change in level), it may be determined that an external attack on the attack detection circuit 120 has occurred. In other words, the attack detection circuit 120 is in an attack state.
If the attack detection circuit 120 is in the normal state, the security BIST circuit 122 may be deactivated (S150). In this case, the abnormal condition sensing circuit 121 of the attack detection circuit 120 may perform a normal operation (S160). It is then determined whether an operation of the attack detection circuit 120 is to be continued (S170). If so, the security BIST circuit 122 may be activated periodically or according to a policy (e.g., returning back to S120). Otherwise, an operation of the attack detection circuit 120 terminates.
In contrast, if the attack detection circuit 120 is in the attack state, the attack detection circuit 120 may notify the attack state to the internal circuit 110 (S155). The internal circuit 110 may be reset or shut down in response to a notification signal of the attack state or may delete significant information (e.g., private information and financial information) that should not be hacked (S165). According to an exemplary embodiment of the inventive concept, the significant information to be deleted may be determined in advance.
Accordingly, the integrated circuit 100 according to an exemplary embodiment of the inventive concept may monitor an attack state of the attack detection circuit 120 as well as the internal circuit 110, thus providing a safer and more secure hacking security policy.
In
Referring to
The attack detection circuit operates in a normal mode or a security BIST mode. Since a floating switch of a security BIST circuit is turned on in the normal mode, output values of an abnormal condition sensing circuit may be normally sent to the comparator 123 (refer to
According to an exemplary embodiment of the inventive concept, in the normal state of the attack detection circuit, the output value COMP_OUT of the comparator 123 may change. In contrast, in the attack state of the attack detection circuit, the output value COMP_OUT of the comparator 123 may be uniform without any change. According to an exemplary embodiment of the inventive concept, the change of the output value COMP_OUT may indicate a change or a difference between output values in each of the normal mode and the security BIST mode.
For example, if the attack detection circuit is in the normal state (e.g., there is no attack from attackers), an output of the security BIST circuit will change by the power supply voltage VDD or the ground voltage GND that is compulsorily supplied. In other words, the attack detection circuit can detect the power supply voltage VDD or the ground voltage GND that is compulsorily supplied. Thus, when the output value COMP_OUT of the comparator 123 changes, the attack detection circuit is operating normally and is in the normal state.
In contrast, if the attack detection circuit is in the attack state (e.g., there is an attack from attackers), an output of the security BIST circuit may not change by the power supply voltage VDD or the ground voltage GND that is compulsorily supplied. Thus, the attack detection circuit cannot detect a change by the power supply voltage VDD or the ground voltage GND that is compulsorily supplied. In other words, when the output value COMP_OUT of the comparator 123 does not change, the attack detection circuit abnormally operates and is in the attack state.
According to an exemplary embodiment of the inventive concept, if an external attack is detected during a normal operation mode of the attack detection circuit, the output value COMP_OUT of the comparator 123 may change.
According to an exemplary embodiment of the inventive concept, the first reference voltage VREF1 and the second reference voltage VREF2 may have different voltage levels. According to an exemplary embodiment of the inventive concept, the first reference voltage VREF1 and the second reference voltage VREF2 may have substantially the same voltage level.
If the attack detection circuit is attacked, output values of the comparison units 123-1 and 123-2 may not be changed by a compulsorily received voltage VDD or GND. The detector 124 may include a logic circuit 124-1 that performs a logical operation on output values of the comparison units 123-1 and 123-2. For example, the logic circuit 124-1 may be implemented to perform an AND operation. When logical levels of the output values of the comparison units 123-1 and 123-2 are substantially the same as each other, the detector 124 may generate an attack notification signal RST providing notification of an external attack. It should be understood that a configuration of the comparator 124 is not limited to a logical AND operation as illustrated, but can be implemented using equivalent logic circuits.
According to exemplary embodiments of the inventive concept, a laser detector that detects a laser fault attack may be included in each of the internal configurations of the attack detection circuits described above with reference to
Each of the laser detectors 225-1, 225-2, 225-3, and 225-4 may be implemented with a latch circuit.
According to an exemplary embodiment of the inventive concept, the initial value signal IV may be generated in an internal circuit. The latch circuit 14 may include inverters (INV1 and INV2) 15 and 16 that are connected back-to-back between the first node N1 and a second node N2. In the case of a laser fault attack, the initial value of the first node N1 may be changed due to a leakage current of the latch circuit 14. The laser detector 10 may generate an output signal OUT at the first node N1 indicating whether the initial value is changed. Additionally, the laser detector 10 may generate an inverted output signal OUTB at the second node N2.
The second inverter 16a may include a second PMOS transistor PT2 and a second NMOS transistor NT2. The second PMOS transistor PT2 is connected between the power supply voltage VDD and the second node N2 and has a gate connected to the first node N1. The second NMOS transistor NT2 is connected between the second node N2 and the ground voltage GND and has a gate connected to the first node N1. According to an exemplary embodiment of the inventive concept, the first node N1 may be a node outputting the output signal OUT, and the second node N2 may be a node outputting the inverted output signal OUTB.
The initial value setting circuit 12a may include an NMOS transistor NIT that is connected between the first node N1 and the ground voltage GND and has a gate connected to receive the initial value signal IV. The NMOS transistor NIT may be turned on in response to the initial value signal IV to initialize the output signal OUT with a low level (e.g., GND).
Some of the first and second PMOS transistors PT1 and PT2 and the first and second NMOS transistors NT1 and NT2 may be designed (e.g., with a layout) to increase reactivity to a laser, and others thereof may be designed (e.g., with a layout) to suppress reactivity to the laser. For example, to increase responsiveness to a laser, some of the first and second PMOS transistors PT1 and PT2 and the first and second NMOS transistors NT1 and NT2 may be designed (e.g., with a layout) to be larger in size than the others.
According to an exemplary embodiment of the inventive concept, the first NMOS transistor NT1 and the second PMOS transistor PT2 may be controlled to be turned on initially by the initial value setting circuit 12a, and the first PMOS transistor PT1 and the second NMOS transistor NT2 may be controlled to be turned off initially by the initial value setting circuit 12a.
The first NMOS transistor NT1 and the second PMOS transistor PT2 that are controlled to be turned on initially may have a relatively small size compared with the first PMOS transistor PT1 and the second NMOS transistor NT2 so as not to react to the laser. In contrast, the first PMOS transistor PT1 and the second NMOS transistor NT2 that are controlled to be turned off initially may have a relatively large size compared with the first NMOS transistor NT1 and the second PMOS transistor PT2 so as to react to the laser well.
A ratio of width to length (W/L) of an active area of each transistor may be adjusted to adjust a size of each of the first NMOS transistor NT1, the second PMOS transistor PT2, the first PMOS transistor PT1, and the second NMOS transistor NT2. A length and/or a width of an active area of each transistor may be adjusted to adjust the W/L.
According to an exemplary embodiment of the inventive concept, a ratio of the W/L of the active area of the first NMOS transistor NT1 to the W/L of the active area of the second NMOS transistor NT2 may be 1:2. Additionally, according to an exemplary embodiment of the inventive concept, a ratio of the W/L of the active area of the second PMOS transistor PT2 to the W/L of the active area of the first PMOS transistor PT1 may be 1:2. However, the inventive concept is not limited thereto.
According to an exemplary embodiment of the inventive concept, to prevent the first NMOS transistor NT1 and the second PMOS transistor PT2 from reacting to the laser, the first NMOS transistor NT1 and the second PMOS transistor PT2 may have a layout to be covered by a metal layer. Additionally, to allow the first PMOS transistor PT1 and the second NMOS transistor NT2 to react to the laser well, the first PMOS transistor PT1 and the second NMOS transistor NT2 may have a layout to not to be covered by a metal layer.
It should be understood that the laser detectors 10a to 10d illustrated in
According to an exemplary embodiment of the inventive concept, an integrated circuit may be implemented to include a laser detector in a reference voltage generating circuit generating the reference voltage VREF.
The reference voltage generating circuit 230 may generate the reference voltage VREF for an attack detection circuit (e.g., the attack detection circuit 220 of
According to an exemplary embodiment of the inventive concept, an attack detection circuit may perform a laser detecting operation at substantially the same time as a security BIST operation.
According to an exemplary embodiment of the inventive concept, the integrated circuit 200 may detect a laser fault attack in a security BIST mode (S230). For example, as described with reference to
The integrated circuit 200 may determine a normal state or an attack state based on a result of detection for the laser fault attack (S240). For example, if the laser fault attack is not detected, it is determined as the normal state, and if the laser fault attack is detected, it is determined as the attack state. The integrated circuit 200 may perform operations S250 to S270 based on the determination.
According to an exemplary embodiment of the inventive concept, the security BIST mode for detecting the laser fault attack has been described with reference to
According to an exemplary embodiment of the inventive concept, the security BIST mode for detecting a laser fault attack in
According to an exemplary embodiment of the inventive concept, an integrated circuit may further include a laser detector in an internal circuit.
The attack detection circuit according to exemplary embodiments of the inventive concept may be applied to a memory system (e.g., a smart card).
The CPU 1100 may be implemented to control overall operations of the security system 1000. The buffer memory 1200 may be implemented to temporarily store data needed to drive the security system 1000. For example, the buffer memory 1200 may be implemented with a random access memory. The code memory 1300 may be implemented to store code data needed to drive the security system 1000. The crypto circuit 1400 may decode (or decrypt) encrypted instructions, perform authentication, process electronic signatures and other data, etc. under control of the CPU 1100. The nonvolatile memory 1500 may be implemented to store data needed to drive the crypto circuit 1400. The nonvolatile memory controller 1600 may be implemented to access the nonvolatile memory 1500 under control of the CPU 1100 or the crypto circuit 1400.
The attack detection circuit 1700 may be implemented with the attack detection circuit described above with reference to
The security system 1000 may be implemented to further include a laser detector in a crypto circuit to enhance security of the crypto circuit.
An attack detection circuit according to an exemplary embodiment of the inventive concept may be applied to a security identification card.
An attack detection circuit according to an exemplary embodiment of the inventive concept may be applied to a security product embedded in a mobile device.
The application processor 3100 may be implemented to control overall operations of the mobile device 3000 and wired/wireless communication with the outside. The memory 3200 may be implemented to temporarily store data needed for a processing operation of the mobile device 3000. According to an exemplary embodiment of the inventive concept, the memory 3200 may be implemented with a dynamic random access memory (DRAM), a synchronous DRAM (SDRAM), a magnetic RAM (MRAM), etc. The security chip 3300 may be implemented with software and/or tamper resistant hardware, may control high-level security, and may work in cooperation with a trusted execution environment (TEE) of the application processor 3100. For example, the security chip 3300 may perform an encryption and decryption operation, message authentication code (MAC) generation/verification, etc. performed in the TEE.
The security chip 3300 may include a native operating system as an operating system, a secure storage device that is an internal data storage, an access control block that controls authority to access the security chip 3300, a security function block that performs ownership management, key management, digital signature processing, encryption/decryption, etc., and a firmware update block that updates firmware of the security chip 3300. The security chip 3300 may be, for example, an embedded secure element (eSE). Additionally, the security chip 3300 may be implemented to include an attack detection circuit as described above with reference to
The mobile device 3000 may further include a display/touch module. The display/touch module may be implemented to display data processed by the application processor 3100 or to receive data from a touch panel.
The mobile device 3000 may further include a storage device. The storage device may be implemented to store data of a user. The storage device may be an embedded multimedia card (eMMC), a solid state drive (SSD), a universal flash storage (UFS), etc. The storage device may include at least one nonvolatile memory device. The nonvolatile memory device may be a NAND flash memory, a vertical NAND flash memory (VNAND), a NOR flash memory, a resistive random access memory (RRAM), a phase change memory (PRAM), a magneto-resistive random access memory (MRAM), a ferroelectric random access memory (FRAM), a spin transfer torque random access memory (STT-RAM), etc.
Furthermore, the nonvolatile memory device may be implemented to have a three-dimensional (3D) array structure. In an exemplary embodiment of the inventive concept, a 3D memory array is provided. The 3D memory array is monolithically formed with one or more physical levels of arrays of memory cells having an active area disposed above a silicon substrate and circuitry associated with the operation of those memory cells, whether such associated circuitry is above or within the silicon substrate. The term “monolithic” indicates that layers of each level of the memory array are directly deposited on the layers of an underlying level of the memory array.
In an exemplary embodiment of the inventive concept, the 3D memory array includes vertical NAND strings that are vertically oriented such that at least one memory cell is disposed over another memory cell. The at least one memory cell may comprise a charge trap layer. Each vertical NAND string may include at least one selection transistor located over the memory cells. At least one selection transistor may have substantially the same structure as those of the memory cells and may be monolithically formed together with the memory cells.
The 3D memory array is formed of a plurality of levels and has word lines or bit lines shared among the levels. The following patent documents, which are hereby incorporated by reference, describe suitable configurations for 3D memory arrays: U.S. Pat. Nos. 7,679,133, 8,553,466, 8,654,587, and 8,559,235; and U.S. Pat. Pub. No. 2011/0233648. The nonvolatile memory according to exemplary embodiments of the inventive concept may be applicable to a charge trap flash (CTF) in which an insulating layer is used as a charge storage layer, as well as a flash memory device in which a conductive floating gate is used as a charge storage layer.
An attack detection circuit according to an exemplary embodiment of the inventive concept may be applied to an electronic device.
The electronic device 4100 may include a bus 4110, a processor 4120, a memory 4130, a user input module 4140, a display module 4150, a communication module 4160, and an attack detection circuit 4170.
The bus 4110 may be a circuit that interconnects the above-described components and conveys communications (e.g., a control message) between the above-described components.
The processor 4120 may receive, for example, a command from the above-described other components (e.g., the memory 4130, the user input module 4140, the display module 4150, and the communication module 4160) through the bus 4110, may decode the received command, and may perform an arithmetic operation or a data processing operation based on the decoded command.
The memory 4130 may store instructions or data which are received from the processor 4120 or other components (e.g., the user input module 4140, the display module 4150, and the communication module 4160) or are generated by the processor 4120 or the other components. The memory 4130 may include programming modules, for example, a kernel 4131, a middleware 4132, an application programming interface (API) 4133, and an application 4134. Each of the above-mentioned programming modules may be configured with software, firmware, hardware, or a combination of at least two or more thereof.
The kernel 4131 may control or manage system resources (e.g., the bus 4110, the processor 4120, and the memory 4130) that are used to execute operations or functions of other programming modules (e.g., the middleware 4132, the API 4133, and the application 4134). Additionally, the kernel 4131 may provide an interface that allows the middleware 4132, the API 4133, or the application 4134 to access discrete components of the electronic device 4100 so as to control or manage system resources.
The middleware 4132 may perform, for example, a mediation role such that the API 4133 or the application 4134 communicates with the kernel 4131 to exchange data. Additionally, with regard to task requests received from the application 4134, the middleware 4132 may perform load balancing on a task request by using a method of assigning the priority, which makes it possible to use a system resource (e.g., the bus 4110, the processor 4120, or the memory 4130) of the electronic device 4100, to at least one of a plurality of applications of the application 4134.
The API 4133, which is an interface through which the application 4134 controls a function provided by the kernel 4131 or the middleware 4132, may include, for example, at least one interface or function for a file control, a window control, image processing, a character control, etc.
The user input module 4140 may convey an instruction or data received from a user to the processor 4120 or the memory 4130 through the bus 4110. The display module 4150 may display a video, an image, or data to the user.
The communication module 4160 may establish communication between any other electronic device 4102 and the electronic device 4100. The communication module 4160 may support short range communication protocols (e.g., wireless fidelity (Wi-Fi), Bluetooth (BT), and near field communication (NFC)) or network communications (e.g., Internet, a local area network (LAN), a wide area network (WAN), a telecommunications network, a cellular network, a satellite network, and plain old telephone service (POTS)). The electronic device 4102 may be a device that is substantially the same (e.g., the same type) as or different (e.g., a different type) from the electronic device 4100.
The attack detection circuit 4170 may be implemented to detect an external attack thereon or on internal configurations of the electronic device 4100 and to prevent information leakage from the detected attack. According to an exemplary embodiment of the inventive concept, the attack detection circuit 4170 may be implemented with the attack detection circuit described above with reference to
The electronic device 4100 may include a biometric information management module to provide an additional security function. The biometric information management module may manage creation, storage, and deletion of biometric information of a user.
A security system according to an exemplary embodiment of the inventive concept may automatically determine whether a security detector operates abnormally, by using a security BIST. In the case of an abnormal operation, an attack state of the security detector may be conveyed to the interior of the system, and the security system may perform a system reset operation or may delete significant information. Additionally, the security system may add a laser detector, which operates in a normal mode and a security BIST mode, in the vicinity of an attack sensing block.
The security system may block in advance a physical attack or a laser fault attack on security detectors to prevent hacking against a chip, thus increasing the security reliability of the security system. Therefore, security products to which the security system is applied have a high security level.
According to an exemplary embodiment of the inventive concept, an integrated circuit, a mobile device including the same, and an operating method thereof may block a hacking attack on an internal circuit of the integrated circuit in real time by monitoring a physical attack or a laser fault attack on an attack detection circuit of the integrated circuit.
While the inventive concept has been described with reference to exemplary embodiments thereof, it will be apparent to those of ordinary skill in the art that various changes and modifications may be made thereto without departing from the spirit and scope of the inventive concept as set forth in the following claims.
Number | Date | Country | Kind |
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10-2016-0073291 | Jun 2016 | KR | national |
10-2017-0030769 | Mar 2017 | KR | national |