The present application claims priority of Korean Patent Application No. 10-2011-0109345, filed on Oct. 25, 2011, which is incorporated herein by reference in its entirety.
1. Field
Exemplary embodiments of the present invention relate to an integrated circuit system, and more particularly, to a technology for efficiently transfer data between chips.
2. Description of the Related Art
Integrated circuit chips may not operate alone and they operate by transferring and receiving data or signal to and from other chips. For example, memory chips such as a Dynamic Random Access Memory (DRAM) device and a flash memory device transfer and receive data to and from a controller, and a Central Processing Unit (CPU) also transfers and receives data to and from diverse chips in a system. As technology advances, the data transfer rate between chips is growing faster and the fast data transfer rate may generate noises and cause concerns in data recognition.
Referring to
When data are transferred from the memory controller chip 110 to the memory chips 121 to 128, the data are transferred through a 256-bit data channel. Although each of the memory chips 121 to 128 are coupled to a data channel of 32 bits, the memory controller chip 110 is coupled to a data channel of 256 bits. Therefore, tremendous noise may be generated when 256-bit data are transferred in the memory controller chip 110. The noise causes some concerns such as data recognition failure when data are transferred between the memory chips 121 to 128 and the memory controller chip 110.
Such concerns may occurs when data are transferred between the memory chips 121 to 128 and the memory controller chip 110 as well as when one chip transfers and receives data to and from a plurality of other chips.
An embodiment of the present invention is directed to devices to improve detoriation such as noise generation and data recognition failure when data are transferred between chips.
In accordance with an embodiment of the present invention, an integrated circuit system includes a master chip; a slave chip configured to operate under a control of the master chip; and a data channel configured to transfer data between the master chip and the slave chip, wherein a data transfer rate from the master chip to the slave chip through the data channel is different from a data transfer rate from the slave chip to the master chip through the data channel.
In accordance with another embodiment of the present invention, an integrated circuit system includes a first chip; a plurality of second chips; and a plurality of data channels configured to transfer data between the first chip and the multiple second chips, respectively, wherein a data transfer rate from the second chips to the first chip through the multiple data channels is different from a data transfer rate from the first chip to the second chips through the data channels.
In accordance with another embodiment of the present invention, a method for operating a memory system includes transferring a write command and a write address from a memory controller to a memory; transferring a write data from the memory controller to the memory with a first frequency; transferring a read command and a read address from the memory controller to the memory; and transferring a read data from the memory to the memory controller with a second frequency that is different from the first frequency.
An integrated circuit system includes plural different types of devices; and a single type of data channels between the devices, wherein data transfers between the devices are performed at different rates according to transmission direction.
Exemplary embodiments of the present invention will be described below in more detail with reference to the accompanying drawings. The present invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art. Throughout the disclosure, like reference numerals refer to like parts throughout the various figures and embodiments of the present invention.
Referring to
The first chip 210 transfers and receives data to and from the second chips 221 to 228 through the channels CHANNEL1 to CHANNEL8, respectively. When data are transferred and received between one chip and other multiple chips, one chip, e.g., the first chip 210, serves as a master chip and the other multiple chips, e.g., the second chips 221 to 228, serve as slave chips which are subordinate to the master chip or under the control of the master chip. For example, the first chip 210 may be a memory controller, and the second chips 221 to 228 may be memories that operate under the control of the memory controller.
In this embodiment of the present invention, the aforementioned detorioration occurring in data transfer is solved by controlling the data transfer rate of the first chip 210 and the data transfer rate of the second chips 221 to 228 to be different from each other. For example, when data are transferred from the first chip 210 to the second chips 221 to 228, the data may be transferred at a low data transfer rate, which may be as low frequency as approximately 400 Mhz. When data are transferred from the second chips 221 to 228 to the first chip 210, the data may be transferred at a high data transfer rate, which may be as high frequency as approximately 500 Mhz.
The system may control upstream or downstream data transfer at different data transfer rates because of the following reasons. First, although a 32-bit data channel, which is respectively coupled to each of the 32-bit channels CHANNEL1 to CHANNEL8, is formed for each of the second chips 221 to 228, the first chip 210 is coupled to one 256-bit data channel CHANNEL1 to CHANNEL8. Additionally, when data are transferred and received, more noise is generated in a data transferring part than in a data receiving part. Generally, the data transferring part consumes more power than the data receiving part because of generating predetermined current amounts or voltage level corresponding to outputted data. On the other hand, the data receiving part just recognizes the data transferred through the data channel. Further, when data are transferred at a high data transfer rate, more noise is generated and more power is consumed as data are transferred faster.
When data are transferred from the first chip 210 to the second chips 221 to 228, a great amount of noise is generated in the first chip 210. Particularly, when a downstream data transfer rate from the first chip 210 to the second chips 221 to 228 is high, enormous noise may be generated at the first chip 210. Therefore, in the embodiment of the present invention, the downstream data transfer rate is controlled to be low while an upstream data transfer rate from the second chips 221 to 228 to the first chip 210 is controlled to be high. Of course, in the upstream data transfer, noise may be generated in the second chips 221 to 228. However, since the number of bits of each data channels coupled to the second chips 221 to 228, which is 32 bits, is much smaller than that of the data channel of the first chip 210, which is 256 bits, the noise might be insignificant.
In the downstream data transfer, the data are not always transferred to all of the second chips 221 to 228 simultaneously. That is, the data may be transferred to some of the second chips 221 to 228. Also, downstream data is transferred through some data channels, upstream data may be transferred through other data channels. While data are transferred from the first chip 210 to some of the second chips 221 to 228 through some data channels among the data channels CHANNEL1 to CHANNEL8, other data may be transferred from the other second chips to the first chip 210 through the other data channels.
The first chip 210 and the second chips 221 to 228 might be not required to be formed in one chip or one wafer. Those may be a chip package including plural chips inside. Although not illustrated in
Referring to
The internal circuit 301 performs the intrinsic function of the first chip 210. The intrinsic function of the first chip 210 depends on what kind of chips the first chip 210 is. For example, if the first chip 210 is a memory controller, the internal circuit 301 may include a logic for controlling a memory. If the first chip 210 is a Central Processing Unit (CPU), the internal circuit 301 may include a circuit for controlling diverse operations and peripheral chips.
The strobe signal generation circuit 302 generates a strobe signal STROBE1 for strobing a data DATA1 that is outputted from the first chip 210. A signal OUT_EN1 inputted to the strobe signal generation circuit 302 is a signal for informing a duration that the data DATA1 is outputted from the first chip 210. In short, the signal OUT_EN1 represents a required duration that the data DATA1 is recognized, which is an enabling duration of the strobe signal generation circuit 302. The strobe signal STROBE1 generated by the strobe signal generation circuit 302 is a signal having a lower frequency than a strobe signal STROBE2. The strobe signal generation circuit 302 may include an oscillator for generating a periodic signal.
The data transferring circuit 304 transfers the data from the internal circuit 301 to the second chip 221 in response to the strobe signal STROBE1. The data transferring circuit 304 may include a plurality of drivers as shown in
The strobe signal receiving circuit 305 receives a strobe signal STROBE2 that is transferred from the second chip 221 through a strobe channel, and transfers the received strobe signal STROBE2 to the data receiving circuit 306. The data receiving circuit 306 then receives the data DATA2 that is transferred from the second chip 221 to the first chip 210 in response to the strobe signal STROBE2.
The second chip 221 includes an internal circuit 311, a strobe signal generation circuit 312, a strobe signal transferring circuit 313, a data transferring circuit 314, a strobe signal receiving circuit 315, and a data receiving circuit 316.
The internal circuit 311 performs the intrinsic function of the second chip 221. The intrinsic function of the second chip 221 depends on what kind of chips the second chip 221 is. For example, if the second chip 221 is a memory, the internal circuit 311 may be a circuit for storing data and a circuit for controlling the data storing circuit.
The strobe signal generation circuit 312 generates a strobe signal STROBE2 for strobing a data DATA2 that is outputted from the second chip 221. A signal OUT_EN2 inputted to the strobe signal generation circuit 312 is a signal for informing a duration that the data DATA2 is outputted from the second chip 221. In short, the signal OUT_EN2 represents a required duration that the data DATA2 is recognized, which is an enabling duration of the strobe signal generation circuit 312. The strobe signal STROBE2 generated by the strobe signal generation circuit 312 is a signal having a higher frequency than a strobe signal STROBE1. The strobe signal generation circuit 312 may include an oscillator for generating a periodic signal. Also, the strobe signal generation circuit 312 may be designed to generate a strobe signal based on either a clock transferred from the first chip 210 or signals inputted from the outside if not including an oscillator.
The data transferring circuit 314 transfers the data to be transferred from the internal circuit 311 to the first chip 210 in response to the strobe signal STROBE2. The data transferring circuit 314 may include a plurality of drivers as shown in
The strobe signal receiving circuit 315 receives a strobe signal STROBE1 that is transferred from the first chip 210 through a strobe channel, and transfers the received strobe signal STROBE1 to the data receiving circuit 316. The data receiving circuit 316 then receives the data DATA1 that is transferred from the first chip 210 to the second chip 221 in response to the strobe signal STROBE1.
In other words, according to the embodiment in
Although
Referring to
Hereafter, a write operation and a read operation that are performed between the memory controller 410 and the memories 421 to 428 is described with reference to
During a write operation, a write command WT, which is also referred to as a program command in a flash memory operation, and a write address WT_ADD are transferred from the memory controller 410 to the memories 421 to 428 through the control channels CONTROL CHANNEL1 to CONTROL CHANNEL8. The memories 421 to 428 receive the write command WT and the write address WT_ADD and get themselves ready to receive data. Herein, the command and the address may be transferred through the data channels CHANNEL1 to CHANNEL8 in some kinds of memory devices such as a flash memory device.
Subsequently, data are transferred from the memory controller 410 to the memories 421 to 428 through the data channels CHANNEL1 to CHANNEL8. The memories 421 to 428 then program the data at an address designated by the write address WT_ADD. The data transferred from the memory controller 410 to the memories 421 to 428 are transferred at a low data transfer rate, as described earlier.
During a read operation, a read command RD and a read address RD_ADD are transferred from the memory controller 410 to the memories 421 to 428 through the control channels CONTROL CHANNEL1 to CONTROL CHANNEL8. The memories 421 to 428 receive the read command RD and the read address RD_ADD, read data at the address designated by the read address RD_ADD, and get themselves ready to transfer the read data to the memory controller 410.
Subsequently, the data are transferred from the memories 421 to 428 to the memory controller 410 through the data channels CHANNEL1 to CHANNEL8. The data transferred from the memories 421 to 428 to the memory controller 410 may be transferred at a high data transfer rate.
In the embodiment of the present invention, since the write data are transferred more slowly than the read data, the performance of the write operation may be relatively inferior to the performance of the read operation. However, such read/write operations prevent the generation of tremendous noise in the memory controller 410 and secure more stable performances. Also, since such scheme rather increases the possibility that the data transfer rate of the read data is raised, it may be understood that the overall performance is improved.
In a flash memory device, it takes much longer internal operation time for a write operation, which is also referred to as a program operation, than for a read operation. The difference in the internal operation times ranges from at least twice to more than tens of times. Also, in a Phase-Change Random Access Memory (PC RAM), it takes much longer internal operation time for a write operation than for a read operation. Therefore, although the data transfer rate of a write data is set to be slow, it scarcely affects the performance of the memory device.
According to an embodiment of the present invention, when data are transferred between one chip and a plurality of other chips, data are transferred at a low data rate from one chip to other chips, and data are transferred at a high data rate from the other chips to the one chip. Therefore, such problems as power noise and excessive current consumption in one chip which has to include many channels may be solved. As a result, the stable data transfer may be achieved.
While the present invention has been described with respect to the specific embodiments, it will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the following claims.
Number | Date | Country | Kind |
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10-2011-0109345 | Oct 2011 | KR | national |