Integrated circuit with configurable on-die termination

Information

  • Patent Grant
  • 11843372
  • Patent Number
    11,843,372
  • Date Filed
    Tuesday, April 20, 2021
    3 years ago
  • Date Issued
    Tuesday, December 12, 2023
    11 months ago
Abstract
Described are integrated-circuit die with differential receivers, the inputs of which are coupled to external signal pads. Termination legs coupled to the signal pads support multiple termination topologies. These termination legs can support adjustable impedances, capacitances, or both, which may be controlled using an integrated memory.
Description
FIELD

The subject matter presented herein relates generally to the field of communications, and more particularly to high speed electronic signaling within and between integrated circuit devices.


BACKGROUND

High-speed data communication integrated circuit (IC) dies are known to include both drivers and receivers. The driver of one such IC connects to the receiver of another via one or more signal transmission lines. Both the driver and receiver circuits include termination elements that attempt to match the characteristic impedance of the transmission line to the output impedance of the driver and input impedance of the receiver, as impedance mismatches degrade signal quality and consequently reduce communication speed and reliability.


Some conventional communication systems employ control systems that calibrate the impedance of on-die termination (ODT) elements for improved impedance matching. These systems work well in many applications. Still, high-speed data communication circuits often must achieve ever-greater performance levels, at competitive prices, to satisfy customer demand. Furthermore, different customers typically have different requirements that may not be met by a given ODT configuration. One customer might favor power-efficiency over speed, or may prefer different termination voltages or impedances. There is therefore a need for ODT circuits that offer customers access to a broader range of termination topologies and values.





BRIEF DESCRIPTION OF THE DRAWINGS

The subject matter presented herein is illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings and in which like reference numerals refer to similar elements and in which:



FIG. 1 depicts an integrated-circuit die 100 that includes configurable on-die termination in accordance with one embodiment.



FIG. 2 depicts a communication system 200 that employs configurable on-die termination in accordance with another embodiment.



FIG. 3 depicts an IC die 300 in accordance with another embodiment.



FIG. 4 depicts a communication system 400 that employs configurable ODT circuitry in accordance with another embodiment.



FIG. 5 depicts a communication system 500 in accordance with yet another embodiment.



FIG. 6 depicts a configurable RC circuit 600 that can be used in place of the third termination leg of die 510 of FIG. 5, which extends between node 535 and ground.





DETAILED DESCRIPTION


FIG. 1 depicts an integrated-circuit (IC) die 100 in accordance with one embodiment. Die 100 includes a pseudo-differential receiver 105 that compares an input signal RXi, received via a pad 110, with a reference voltage Vref on a like-named voltage terminal or node to produce an output signal RXo. Die 100 also includes programmable on-die termination (ODT) circuitry 115 that can be programmed to provide either of two common termination topologies for high-speed communications: the so-called “rail-to-rail” topology and the so-called “half-supply” topology. The choice of termination topology is then left to the discretion of the user of IC die 100. An external source or internal memory 120 can deliver a signal S/P to temporarily or permanently select one of the two configurations.


ODT circuitry 115 includes two termination legs extending from the communication port between pad 110 and receiver 105. The upper termination leg includes a first termination impedance 125 and a first termination switch 130. Switch 130 includes three switch nodes, two of which are connected to supply voltage Vodt and reference voltage Vref, respectively. The third switch node is coupled to the communication port via termination impedance 125. The lower termination leg includes a second termination impedance 135 and a second termination switch 140 similar to switch 130. Two switch nodes of switch 140 are connected to ground and reference voltage Vref, respectively, while the third is coupled to the communication port via termination impedance 135. Both switches 130 and 140 are two position switches responsive to signal S/P from memory 120 to selectively couple one of the first and second switch nodes to the third switch node.


In rail-to-rail or serial terminations, the communication channel is coupled to each of two opposite supply voltages via a pair of termination impedances. To select a rail-to-rail termination topology, switches 130 and 140 are switched to supply nodes Vodt and ground, respectively. In that case, the input terminal to receiver 105 is coupled to Vodt and ground via respective impedances 125 and 135. Termination voltage Vodt on the like-named supply node is supply voltage Vdd in some embodiments, but may be a different fixed voltage or a variable voltage in other embodiments.


In half-supply or parallel terminations, the communication channel is coupled to a reference voltage between the two supply voltages. To select a half-supply termination topology, switches 130 and 140 are both switched to voltage Vref, in which case the input terminal to receiver 105 is coupled to the reference voltage terminal Vref via parallel impedances 125 and 135. As the name implies, the reference voltage in half-supply terminations is typically half the difference between the voltages on the supply nodes (e.g., Vref=½(Vdd−Gnd)), but voltage Vref may be a different fixed voltage or a variable voltage in other embodiments.


IC die 100 optionally includes a coupling switch 145 between pad 110 and the input terminal of receiver 105. An external or internal signal, such as from memory 120, can deliver a signal AC/DC to temporarily or permanently open or close switch 145. When switch 145 is closed, receiver 105 is DC coupled to pad 110: when open, receiver 105 is AC coupled to pad 110 via a capacitor 150.


Impedances 125 and 135 may be adjustable and capable of calibration. Suitable calibration methods and circuits are detailed in U.S. Pat. No. 6,924,660 entitled “Calibration Methods and Circuits for Optimized On-Die Termination,” which is incorporated herein. Switches 130, 140, and 145 can be fashioned of transistors, as is well understood by those of skill in the art. Capacitor 150 may also be adjustable using methods and circuits detailed below in connection with FIG. 6.



FIG. 2 depicts a communication system 200 in accordance with another embodiment. System 200 has features in common with IC die 100 of FIG. 1, like-numbered elements being the same or similar. System 200 includes ODT circuitry that can selectively introduce filter elements that may be useful for low power configurations. Further, the selection can be accomplished dynamically in some embodiments, which allows system 200 to select appropriate ODT characteristics for high and low-frequency communication. This flexibility is useful for example in systems that support both a low-frequency, power-saving mode and a high-frequency, high-performance mode.


System 200 includes a transmitter IC die 205 coupled to a receiver IC die 210 via a single-ended communication port made up of pads 215, a channel 220, and related conductors on dies 205 and 210. Die 205 includes a transmitter 225 and a pair of termination legs 230. Legs 230 may be the same or similar to the termination legs detailed in connection with the receiver dies 100 and 210 of FIGS. 1 and 2. Transmitter 225 conveys a signal TX to receiver 105 on die 210 via pad 215 and the other elements of the associated communication port.


IC die 210 includes ODT circuitry 235 that can select either a filtered or unfiltered half-supply termination topology. The termination topology is then left to the discretion of the user of IC die 210. The topology may be fixed, defined at start up, or allowed to change dynamically to support different performance modes. In the depicted embodiment, termination select logic 240 issues a control signal L/H, the state of which identifies either a lower-performance, lower-power mode, or a higher-performance, higher-power mode.


ODT circuitry 235 includes two termination legs extending from the communication port between pad 215 and receiver 105 of die 210. The upper termination leg includes a first termination impedance 245 and a first termination switch 250. Switch 250 includes three switch nodes, two of which are connected to reference voltage Vref, one directly and the other via a filter capacitor 255. The third switch node is coupled to the communication port via termination impedance 245. The lower termination leg is substantially the same. The switches of the upper and lower termination legs are responsive to signal L/H from termination select logic 240.


The switches of both termination legs connect their respective termination resistors directly to voltage node Vref in a high-performance mode, and to voltage node Vref via a respective filter capacitor in a low-frequency mode. Filtering the input signal in the low-frequency mode advantageously dampens high-frequency noise components. The filter capacitors may be adjustable in some embodiments to allow filter tuning. Fixed or adjustable resistors in series and/or in parallel with the filter capacitors can also be included.



FIG. 3 depicts an IC die 300 in accordance with another embodiment. Die 300 includes a receiver 305 that compares an input signal RXi with a reference voltage Vref on a like-named voltage node to produce an output signal RXo. Die 300 also includes programmable ODT circuitry 310 that can be programmed to provide filtered or unfiltered rail-to-rail or a half-supply termination topologies, and thus combines the functionality of the embodiments of FIGS. 1 and 2.


ODT circuitry 310 includes two termination legs. Each leg includes switches 315 and 320, a filter capacitor 325, and a termination impedance 330. Switches 315 and 320 support four modes as follows:

    • 1. Unfiltered Rail-to-Rail: Switches 320 are closed and switches 315 of the upper and lower termination legs select nodes Vodt and Ground, respectively.
    • 2. Filtered Rail-to-Rail: Switches 320 are open and switches 315 of the upper and lower termination legs select nodes Vodt and Ground, respectively.
    • 3. Unfiltered Half-Supply: Switches 320 are closed and switches 315 both select node Vref.
    • 4. Filtered Half-Supply: Switches 320 are open and switches 315 both select node Vref.


      ODT circuitry 310 can be adapted to support more modes. Additional supply voltages can be supported, for example, and the impedances and capacitances can be adjustable.



FIG. 4 depicts a communication system 400 that employs configurable ODT circuitry in accordance with another embodiment. The configurable ODT circuitry allows a transmitter die 405 to select between two or more termination voltages when transmitting data to a receiver die 410 over a differential communication channel 415. The resulting output common-mode voltage can thus be tailored to the needs of a receiver on die 410. If, for example, multiple receivers timeshare a common bus but require or benefit from different receive termination voltages, then the associated transmitter or transmitters can use the termination voltage best suited for the receiver with which they are communicating. A communication channel may also support different operational modes that require or benefit from different termination voltages. A transmitter might, for example, support a loop-back communication mode for self test or initialization that employs a first termination voltage, and additionally support one or more operational modes that employ different termination voltages suitable for one or more target receivers.


Die 405 includes a differential transmitter with two identical or nearly identical termination legs. Each leg includes a fixed or adjustable termination impedance 417 and a voltage-select switch 420. The state of switches 420 are controlled using select signal S that may be provided externally or internally, as by a memory 425. Control logic can be included to dynamically alter the states of switches 420, which can alternatively select either of two termination voltages V1 and V2. In other embodiments, a variable voltage source is used in lieu of switches 420 and the two supply nodes.



FIG. 5 depicts a communication system 500 in accordance with yet another embodiment. Communication system 500 includes a transmitting die 505 communicating with a receiving die 510 via a differential channel 515. The transmitting die includes differential output pads 513 coupled via the channel to input pads 517 of the receiving die. In one embodiment, communication system 500 includes a transmitter 520 that employs low-voltage differential signaling (LVDS) for serial data transmission to a corresponding receiver 525, though other types of signaling may also be used. System 500 optionally includes an external differential termination resistor 530 (in phantom).


Die 510 includes programmable ODT circuitry that can select from a number of possible termination topologies. In support of this selectivity, die 510 includes three termination legs that extend from a common node 535, two to the differential input terminals to receiver 525 and one to a reference voltage node, e.g. ground. Each of the first two termination legs includes a termination impedance 540 and a switch 545 connected in series. The third termination leg includes a capacitance 550, a termination impedance 555, and a switch 560. The inclusion of impedances 540 and as associated switches 545 allows for the omission of external resistor 530. The third leg allows for the selective incorporation of a noise-reducing RC filter. The impedances and capacitance of the ODT circuitry of FIG. 5 are variable in some embodiments, which allows filter and termination values to be trimmed for improved performance. Switches 545 and 560 can be controlled by external or internal control signals applied to switch control terminals (not shown). The various capacitive and resistive elements can be similarly controlled.



FIG. 6 depicts a configurable RC circuit 600 that can be used in place of the third termination leg of die 510 of FIG. 5, which extends between node 535 and ground. Circuit 600 includes some memory 605, the outputs of which are coupled to the control terminals of a plurality of transistors 610. The transistors 610 selectively couple one or more differently sized capacitors 615 between node 535 and ground. In addition to controlling the capacitance, the resistance between nodes 535 and ground can be adjusted by selecting various combinations of transistors. The width-to-length ratios of transistors 610 may be varied to provide various impedances so that enabling different combinations of transistors provides different levels of termination impedance.


In the foregoing description and in the accompanying drawings, specific terminology and drawing symbols are set forth to provide a thorough understanding of the present invention. In some instances, the terminology and symbols may imply specific details that are not required to practice the invention. For example, the interconnection between circuit elements or circuit blocks may be shown or described as multi-conductor or single conductor signal lines. Each of the multi-conductor signal lines may alternatively be single-conductor signal lines, and each of the single-conductor signal lines may alternatively be multi-conductor signal lines. Signals and signaling paths shown or described as being single-ended may also be differential, and vice-versa. Similarly, signals described or depicted as having active-high or active-low logic levels may have opposite logic levels in alternative embodiments. As another example, circuits described or depicted as including metal oxide semiconductor (MOS) transistors may alternatively be implemented using bipolar technology or any other technology in which a signal-controlled current flow may be achieved. With respect to terminology, a signal is said to be “asserted” when the signal is driven to a low or high logic state (or charged to a high logic state or discharged to a low logic state) to indicate a particular condition. Conversely, a signal is said to be “de-asserted” to indicate that the signal is driven (or charged or discharged) to a state other than the asserted state (including a high or low logic state, or the floating state that may occur when the signal driving circuit is transitioned to a high impedance condition, such as an open drain or open collector condition). A signal driving circuit is said to “output” a signal to a signal receiving circuit when the signal driving circuit asserts (or de-asserts, if explicitly stated or indicated by context) the signal on a signal line coupled between the signal driving and signal receiving circuits.


An output of a process for designing an integrated circuit, or a portion of an integrated circuit, comprising one or more of the circuits described herein may be a computer-readable medium such as, for example, a magnetic tape or an optical or magnetic disk. The computer-readable medium may be encoded with data structures or other information describing circuitry that may be physically instantiated as an integrated circuit or portion of an integrated circuit. Although various formats may be used for such encoding, these data structures are commonly written in Caltech Intermediate Format (CIF), Calma GDS II Stream Format (GDSII), or Electronic Design Interchange Format (EDIF). Those of skill in the art of integrated circuit design can develop such data structures from schematic diagrams of the type detailed above and the corresponding descriptions and encode the data structures on computer readable medium. Those of skill in the art of integrated circuit fabrication can use such encoded data to fabricate integrated circuits comprising one or more of the circuits described herein.


While the present invention has been described in connection with specific embodiments, variations of these embodiments will be obvious to those of ordinary skill in the art. For example, the embodiments can be adapted for use with various single-ended and differential communication schemes over unidirectional and bidirectional channels. Specific examples include Series Stub Terminated Logic (SSTL) and double-data-rate (DDR) signaling, though this is by no means an exhaustive list. Embodiments may also be used for channels employing various modulation schemes, including those that employ multi-pulse-amplitude-modulation (multi-PAM) and single-PAM signals. Moreover, some components are shown directly connected to one another while others are shown connected via intermediate components. In each instance the method of interconnection, or “coupling,” establishes some desired electrical communication between two or more circuit nodes, or terminals. Such coupling may often be accomplished using a number of circuit configurations, as will be understood by those of skill in the art. Therefore, the spirit and scope of the appended claims should not be limited to the foregoing description. Only those claims specifically reciting “means for” or “step for” should be construed in the manner required under the sixth paragraph of 35 U.S.C. § 112.

Claims
  • 1. An integrated-circuit (IC) die comprising: first and second input pads to receive complementary signals;a receiver having first and second input nodes coupled respectively to the first and second input pads to receive the complementary signals;a common node;a first termination leg to support a first termination topology and a second termination topology, the first termination leg including a first switch in series with a first termination impedance between the first input node of the receiver and the common node;a second termination leg to support the first termination topology and the second termination topology, the second termination leg including a second switch in series with a second termination impedance between the second input node of the receiver and the common node; anda third termination leg having capacitors selectively coupled between the common node and a supply node;wherein the first and second switches are closed in the first termination topology and are open in the second termination topology.
  • 2. The IC die of claim 1, further comprising a termination resistor extending between the first input pad and the second input pad.
  • 3. The IC die of claim 2, wherein the termination resistor extends between the first input pad and the second input pad in the second termination topology.
  • 4. The IC die of claim 1, wherein the supply node is a ground node.
  • 5. The IC die of claim 1, the third termination leg including a third switch and a third termination impedance connected in series with the capacitors between the common node and the supply node.
  • 6. The IC die of claim 1, the third termination leg including a third termination impedance connected in series with a third switch and the capacitors between the common node and the supply node.
  • 7. A method of terminating differential first and second input nodes of a receiver on an integrated circuit, the method comprising: writing a termination setting to a memory, the termination setting indicative of a termination topology for the receiver; andresponsive to the termination setting, closing a first switch between the first input node and a common node to establish a first termination impedance between the first input node and the common node;closing a second switch between the second input node and the common node to establish a second termination impedance between the second input node and the common node;closing a third switch between the common node and a supply node to establish a third termination impedance between the common node and the supply node;adjusting a resistance in series with the third switch between the common node and the supply node; andconnecting at least one of a plurality of capacitors in series with the third switch and the resistance between the common node and the supply node.
  • 8. The method of claim 7, further comprising holding the supply node at ground potential.
  • 9. An integrated-circuit (IC) die comprising: first and second input pads to receive complementary signals;receiver means for recovering an output signal from the complementary signals;a first termination leg to support a first termination topology and a second termination topology, the first termination leg including a first switch in series with a first termination impedance between the first input pad and a common node;a second termination leg to support the first termination topology and the second termination topology, the second termination leg including a second switch in series with a second termination impedance between the second input pad and the common node; anda third termination leg extending from the common node to a supply node, the third termination leg including parallel capacitors switchably in series with a resistor;wherein the first and second switches are closed in the first termination topology and are open in the second termination topology.
  • 10. The IC die of claim 9, further comprising a termination resistor extending between the first input pad and the second input pad.
  • 11. The IC die of claim 10, wherein the termination resistor extends between the first input pad and the second input pad in the second termination topology.
  • 12. The IC die of claim 9, the third termination leg including a third switch in series with a third termination impedance and the parallel capacitors.
US Referenced Citations (124)
Number Name Date Kind
4584695 Wong et al. Apr 1986 A
4590396 Koike May 1986 A
5254883 Horowitz et al. Oct 1993 A
5298800 Dunlop Mar 1994 A
5396028 Tomassetti Mar 1995 A
5406147 Coyle Apr 1995 A
5467455 Gay et al. Nov 1995 A
5523703 Yamamoto et al. Jun 1996 A
5528168 Kleveland Jun 1996 A
5544067 Rostoker Aug 1996 A
5663661 Dillon et al. Sep 1997 A
5666078 Lamphier et al. Sep 1997 A
5680060 Banniza Oct 1997 A
5726582 Hedberg Mar 1998 A
5781028 Decuir Jul 1998 A
5926031 Wallace Jul 1999 A
5939986 Schiffbauer et al. Aug 1999 A
5969658 Naylor Oct 1999 A
5982191 Starr Nov 1999 A
5995894 Wendte Nov 1999 A
6028484 Cole Feb 2000 A
6040714 Klein Mar 2000 A
6060907 Vishwanthaiah et al. May 2000 A
6064224 Esch, Jr. May 2000 A
6072943 Gasparik et al. Jun 2000 A
6147520 Kothandaraman Nov 2000 A
6157206 Taylor et al. Dec 2000 A
6232792 Starr May 2001 B1
6266001 Fang Jul 2001 B1
6288564 Hedberg Sep 2001 B1
6308232 Gasbarro Oct 2001 B1
6344765 Taguchi Feb 2002 B2
6353334 Schultz et al. Mar 2002 B1
6356105 Volk Mar 2002 B1
6356106 Greet et al. Mar 2002 B1
6366128 Ghia et al. Apr 2002 B1
6411122 Mughal Jun 2002 B1
6418500 Gai Jul 2002 B1
6424170 Raman Jul 2002 B1
6448813 Donnelly et al. Sep 2002 B2
6462588 Lau et al. Oct 2002 B2
6462591 Garret et al. Oct 2002 B2
6495997 Hall et al. Dec 2002 B2
6509756 Yu et al. Jan 2003 B1
6525558 Kim Feb 2003 B2
6530062 Donnelly et al. Mar 2003 B1
6535047 Mughal et al. Mar 2003 B2
6545522 Mughal Apr 2003 B2
6552565 Chang Apr 2003 B2
6573746 Kim Jun 2003 B2
6573747 Radhakrishnan Jun 2003 B2
6608507 Garret et al. Aug 2003 B2
6661250 Kim Dec 2003 B2
6700823 Rahman Mar 2004 B1
6711073 Martin Mar 2004 B2
6734702 Ikeoku et al. May 2004 B1
6762620 Jang et al. Jul 2004 B2
6768352 Maher Jul 2004 B1
6781405 Rajan et al. Aug 2004 B2
6806728 Nguyen et al. Oct 2004 B2
6856169 Frans et al. Feb 2005 B2
6888370 Luo et al. May 2005 B1
6894691 Juenger May 2005 B2
6924660 Nguyen et al. Aug 2005 B2
6940303 Vargas Sep 2005 B2
6965529 Zumkehr et al. Nov 2005 B2
6968413 Cranford, Jr. et al. Nov 2005 B2
6980020 Best et al. Dec 2005 B2
6981089 Dodd et al. Dec 2005 B2
7038498 Funaba May 2006 B2
7042254 Hori May 2006 B2
7068064 Yen Jun 2006 B1
7102200 Fan et al. Sep 2006 B2
7102390 Frans et al. Sep 2006 B2
7109744 Shumarayev et al. Sep 2006 B1
7120390 Grundvig et al. Oct 2006 B2
7123047 Lim Oct 2006 B2
7135884 Talbot Nov 2006 B1
7148721 Park Dec 2006 B2
7151390 Nguyen et al. Dec 2006 B2
7161378 Kang et al. Jan 2007 B2
7196567 Nguyen Mar 2007 B2
7245146 Ishizuka et al. Jul 2007 B2
7245154 Davidson et al. Jul 2007 B1
7268712 Shen Sep 2007 B1
7301371 Kim Nov 2007 B2
7342411 Vergis et al. Mar 2008 B2
7750666 Zhang et al. Jul 2010 B2
7843212 Tanaka Nov 2010 B2
7948262 Nguyen May 2011 B2
7965104 Ishibashi Jun 2011 B2
8072235 Nguyen Dec 2011 B2
8798204 Chen Aug 2014 B2
8941407 Nguyen Jan 2015 B2
9281816 Amirkhany Mar 2016 B2
9338037 Nguyen May 2016 B2
9871516 Jeong Jan 2018 B2
9935606 Lin Apr 2018 B1
10291275 Lee May 2019 B2
11184196 Yang Nov 2021 B1
20010047450 Gillingham et al. Nov 2001 A1
20020130680 Meyer et al. Sep 2002 A1
20030112751 Yuffe et al. Jun 2003 A1
20030146772 Chansungsan Aug 2003 A1
20040000924 Best et al. Jan 2004 A1
20040124850 Koneru Jul 2004 A1
20040189343 Jang Sep 2004 A1
20040201402 Rajan et al. Oct 2004 A1
20040222834 Frans et al. Nov 2004 A1
20040246026 Wang et al. Dec 2004 A1
20050057275 Nguyen et al. Mar 2005 A1
20050225353 Kwon Oct 2005 A1
20050275425 Lee Dec 2005 A1
20060007761 Ware et al. Jan 2006 A1
20060071683 Best et al. Apr 2006 A1
20060077731 Ware et al. Apr 2006 A1
20070007992 Bains et al. Jan 2007 A1
20070070717 Kim Mar 2007 A1
20070085562 Nguyen et al. Apr 2007 A1
20100066404 Zhang et al. Mar 2010 A1
20110019760 Nguyen Jan 2011 A1
20110267101 Oh et al. Nov 2011 A1
20120187978 Fazeel et al. Jul 2012 A1
20180004281 Kang et al. Jan 2018 A1
Foreign Referenced Citations (10)
Number Date Country
0520687 Dec 1992 EP
0817441 Jan 1998 EP
02-140676 May 1990 JP
WO-1997-002658 Jan 1997 WO
WO-1998-004041 Jan 1998 WO
WO-2000-041300 Jul 2000 WO
WO-2000-070474 Nov 2000 WO
WO-02063833 Aug 2002 WO
WO-2004-061690 Jul 2004 WO
WO-2005-119471 Dec 2005 WO
Non-Patent Literature Citations (43)
Entry
Black, Mike, “Xilinx/Micron Partner to Provide High-Speed Memory Interfaces.” Xcell Journal, First Quarter 2005. 2 pages.
Cao, T et al. “On-Chip Programmable Termination Scheme.” IP.Com PriorArt Database—Technical Disclosure, Original Publication date . vol. 38 No. 02, Feb. 1, 1995. 4 Pages.
DE Office Action dated Jun. 3, 2011 re DE Application No. 112006003478.2. 11 Pages.
DE Response dated Nov. 23, 2011 to the Office Action dated Jun. 3, 2011 re DE Application No. 112006003478.2. 30 Pages.
Dell Computer Corporation et al., “Serial ATA II: Electrical Specification,” Rev. 1, May 26, 2004. 187 pages.
Elpida Memory, Inc., “512M bits DDR3 SDRAM,” Preliminary Data Sheet, Document No. E0785E11, Ver. 1.1, Feb. 2006, www.elpida.com. 4 pages.
Ethirajan et al., “Termination Techniques For High-Speed buses,” EDN Magazine, Issue 04, Feb. 16, 1998. 9 pages.
Farrell, Todd, “Core Architecture Doubles MEM Data Rate,” in Electronic Engineering Times Asia, Dec. 16, 2005. 4 pages.
Gabara et al., “Digitally Adjustable Resistors in CMOS for High-Performance Applications,” IEEE Journal of Solid-State Circuits, vol. 27, No. 8, Aug. 1992. 10 pages.
Gabara, Thaddeus J., “On-Chip Terminating Resistors for High Speed ECL-CMOS Interfaces.” Feb. 1992. IEEE, p. 292-295. 4 pages.
Gervasi, Bill, “DRAM Module Market Overview,” SimpleTech, JEDEX Shanghai, Oct. 25-26, 2005. 50 pages.
Huq, Syed B., et al., “An Overview of LVDS Technology.” 1998 National Semiconductor Corporation. 12 pages.
Hynix Semiconductor, “JEDEX Shanghai 2005,” Oct. 2005. 24 pages.
Janzen, Jeff, “DDR2 Offers New Features and Functionality,” Designline, vol. 12, Issue 2, Micron, Jul. 31, 2003, EN.L. 16 pages.
Johnson, Chris, “Graphics DDR3 On-Die Termination and Thermal Considerations,” Micron Designline, vol. 12, Issue 1, Rev. Apr. 1, 2003, 1Q03/2Q03. 8 pages.
Johnson, Chris, “The Future of Memory: Graphics DDR3 SDRAM Functionality,” Micron Designline, vol. 11, Issue 4, 4Q02, Oct. 2002. 8 pages.
JP Office Action dated Dec. 14, 2011 re JP Application No. 2008-547256. 2 Pages. (With Translation).
JP Response dated Mar. 14, 2012 re JP Application No. 2008-547256. 4 pages. (No. Translation).
Khouri, Gaby “Evaluation of Alcatel Patent Portfolio by Semiconductor Insights.” Nov. 2004. Copyright Semiconductor Insights Inc. 38 pages.
Kim, Su-Chul, “Programmable Digital On-Chip Terminator.” ITC-CSCC, 2002. 4 pages.
Knight et al., “Self-Terminating Low-Voltage Swing CMOS Output Driver,” IEEE Journal of Solid-State Circuits, vol. 23, No. 2, Apr. 1988. 8 pages.
Lee, K.H., “MultiMediaCard Solutions of Digital Storage Applications,” Samsung Electronics, JEDEX Shanghai, Oct. 26, 2005. 28 pages.
LSI Logic Corporation, Copyright., “Achieving Flexible, High Performance I/O with RapidChip Platform ASICs.” 2005. 7 pages.
Micron Technical Note, “DDR2-533 Memory Design Guide for Two-DIMM Unbuffered Systems,” TN-47-01, 2003. 19 pages.
Micron Technical Note, “TN-47-07: DDR2 Simulation Support,” Rev. A Jul. 5, 2003. 4 pages.
Micron Technology, Inc., “Graphics DDR3 DRAM,” Advance, 256 Mb × 32 GDDR3 DRAM, © 2003, pp. 1-67. 67 pages.
PCT Int'l. Preliminary Report on Patentability (Chapter I of the Patent Cooperation treaty) re PCT/US2006/045966, dated Jul. 3, 2008. 12 pages.
Pericom Semiconductor Corporation, “High Performance Switches: Silicon Switch Product Line Detail,” Jul. 2004, Slide Show Presentation. 53 pages.
Rhoden et al., “DDR/DDR2/DDR3 SDRAM Tutorial,” Oct. 25-26, 2005, Slide Presentation. 118 pages.
Rhoden, Desi, “VTF 2005: The Evolution of DDR,” Via Technology Forum 2005, Inphi Corporation, JEDEC 42 Memory Committee. 23 pages.
Samsung Electronics, “512Mb E-die DDR3 SDRAM Specification,” Preliminary 512Mb DDR3 SDRAM, Rev. 0.5, Dec. 2006, K4B510846E. 55 pages.
Samsung Electronics, “DDR2 ODT Control,” Product Planning & Application Engineering Team, Dec. 2004. 8 pages.
Serial ATA International Organization, “Serial ATA Revision 2.5”, dated Oct. 2, 2005. 587 Pages.
Shen, Dr. William Wu, “DDR3 Functional Outlook,” Infineon, JEDEX Shanghai, Oct. 25-26, 2005, JEDEC 42.3B Letter Committee, Functional and Features. 30 pages.
Shen, Dr. William Wu, “DDR3 Functional Outlook,” JEDEX San Jose, Apr. 2006, JEDEC 42.3B Letter Committee, Functional and Features. 31 pages.
Shen, Dr. William Wu, “System Challenges on DDR3 High Speed Clock/Address/Command Fly-by Bus Topology,” JEDEX San Jose, Apr. 18, 2006. 47 pages.
Texas Instruments, Copyright, “LVDS Multidrop Connections, Application Report, Mixed Signal Products (SLLA054).” Jul. 1999. 37 pages.
The International Engineering Consortium, Copyright, “Low-Voltage Differential Signaling.” Downloaded from Web ProForum Tutorials http://www.ied.org, Dec. 2005. 15 pages.
Trost, Dr. Hans-Peter, “Press Presentation DDR3 Introduction,” Memory Products Group, Infineon Technologies, AG, Jun. 2005. 11 pages.
Weidlich, Rainer, “What Comes Next in Commodity DRAMS—DDR3,” Infineon Technologies, Jun. 2005. 4 pages.
Wikipedia dated Mar. 8, 2010, “Serial ATA”. 10 pages.
Xilinx Inc., “Xilinx Digitally Controlled Impedance (DCI) Technology,” VTT011 (v1.1) Sep. 20, 2001, Virtex Tech Topic. 3 pages.
Xilinx, Inc., “Virtex-II Platform FPGAs: Functional Description,” Product Specification, DS031-2 (v3.3), Jun. 24, 2004, pp. 1-11, 35-39. 16 pages.
Related Publications (1)
Number Date Country
20210297079 A1 Sep 2021 US
Continuations (11)
Number Date Country
Parent 16856645 Apr 2020 US
Child 17235283 US
Parent 16290749 Mar 2019 US
Child 16856645 US
Parent 15612455 Jun 2017 US
Child 16290749 US
Parent 15134513 Apr 2016 US
Child 15612455 US
Parent 14598990 Jan 2015 US
Child 15134513 US
Parent 13906219 May 2013 US
Child 14598990 US
Parent 13312762 Dec 2011 US
Child 13906219 US
Parent 13023993 Feb 2011 US
Child 13312762 US
Parent 12790381 May 2010 US
Child 13023993 US
Parent 12288612 Oct 2008 US
Child 12790381 US
Parent 11313054 Dec 2005 US
Child 12288612 US