The present invention relates to an integrated framework, and more particularly, to an integrated framework of a memory storage module and one or more entities or types of sensor modules.
Nowadays, electronic devices (especially, hand-held devices such as cell phones, smart phones, and tablets) generally adopt mass storage devices to store data. For example, non-volatile flash memory is a common mass storage device. There are many types of interfaces connecting the non-volatile flash memory to the electronic device and for example, the interface may include Multimedia Card (MMC), embedded memory storage device (eMMC) interface, and eMCP (eMMC with dynamic random access memory added). Other interfaces are Secure Digital Card (SD card) interface, Universal Flash Storage (UFS) interface, Open NAND Flash Interface (ONFI), and Toggle Flash Interface.
The storage media of the electronic devices (especially, hand-held devices) usually adopts the memory storage module complying with MMC standards. This type of memory storage device usually integrates an eMMC controller, a microcontroller, and a non-volatile memory. This is so-called embedded storage device with eMMC interface. These elements can be packaged into a unity by using Ball Grid Array (BGA) packaging.
Generally speaking, the eMMC module 120 has a static random access memory (not shown) such as SRAM deployed therein, which is usually located in the first microcontroller 124 and is provided for the first microcontroller 124. In addition, the sensor module 130 also has a SRAM, which is integrated in the second microcontroller 134 and is provided for the second microcontroller 134. Therefore, the data in the first (or the second) non-volatile memory 126 (or 136) may first be read to the static random access memory, and then the first (or the second) microcontroller 124 (or 134) accesses the static random access memory for increasing the read performance.
In the conventional electronic device 10 illustrated with the embedded memory storage device eMMC, the eMMC module 120 and the sensor module 130 (e.g., a touch sensor module) are provided by different manufactures, and the manufactures will not produce them all due to divergence of their technologies and division of supply chain. Therefore, in an aspect of packaging structure, the eMMC module 120 and the sensor module 130 will not be packaged in a same packaging structure. For the eMMC module 120 in the conventional skills, MCP (Multi Chip Package) is usually adopted to package the eMMC controller 122 and the first non-volatile memory 126. The first non-volatile memory 126 may be packaged in a manner of stacking. For the sensor module 130, the sensor controller 132 (e.g., a touch sensor controller), the second microcontroller 134, and the second non-volatile memory 136 are usually packaged in a package body or integrated in a same IC wafer, and the microcontroller 134 and other sensors such as an inertial sensor, a gyroscope sensor, an altimeter sensor, a temperature sensor, and a microphone sensor, are manufactured on different silicon wafers or packaged in different package bodies. Further, in the conventional skills, the elements of the eMMC module 120 are not in associated with the elements of the sensor module 130 due to the different functions provided by the eMMC module 120 and the sensor module 130. Besides, the eMMC module 120 and the sensor module 130 are connected to the primary processor 110 via different transmission interfaces, as shown in
The conventional electronic device 10 has the following technical redundancy that it can be improved. First, the memory storage module such as the eMMC module 120 itself implements a microcontroller, a non-volatile memory, and a static random access memory (SRAM), and the sensor module 130 itself also implements a microcontroller, a non-volatile memory, and a static random access memory (SRAM). Each of microcontroller, non-volatile memory, and static random access memory (SRAM) implemented in the memory storage module 120 and the sensor module 130 has similar functions. It turns out the cost increasing by the duplication of similar silicon intellectual property. Second, in the conventional skills, the sensor module 130 and the memory storage module such as the eMMC module 120 are packaged in separated manufacture processes and package bodies that make high cost of packaging, and occupied two package areas on a printed circuit board (PCB).
An objective of the present invention is to provide an integrated framework of a memory storage module and a sensor module, for reducing the use of silicon intellectual property and lowering the cost of packaging.
To achieve the above objective, the present invention provides an integrated framework of a memory storage module and a sensor module, comprising: an embedded memory storage device controller; a microcontroller coupled to the embedded memory storage device controller; a non-volatile memory coupled to the microcontroller, the embedded memory storage device controller reading a data from the non-volatile memory or writing the data to the non-volatile memory by use of the microcontroller; and a sensor controller for controlling a sensing element to generate or receive a sensing signal; wherein the sensor controller is coupled to the microcontroller, and the sensor controller reads the data from the non-volatile memory or writing the data to the non-volatile memory by use of the microcontroller.
In the present invention, the embedded memory storage device controller (such as the eMMC controller) and the sensor controller share the microcontroller and the non-volatile memory. Both of the embedded memory storage device controller and the sensor controller operate a same microcontroller to access the saved data or the hardware execution data (such as software program codes, firmware, operating parameters, and other data) stored in the non-volatile memory. The firmware codes and data relative to both of the embedded memory storage device controller and the sensor controller are stored in the non-volatile memory. Sensing signals generated by sensor elements may be further computed by use of the microcontroller. Compared to the conventional electronic devices, the microcontroller and the non-volatile memory of the present invention are shared by the embedded memory storage device controller and the sensor controller, and therefore it does not need to deploy a separated microcontroller and a separated non-volatile memory for each of the embedded memory storage device controller and the sensor controller as the conventional skills do. Therefore, compared to the conventional skills, the present invention reduces the use of silicon intellectual property, the cost of silicon wafer is accordingly reduced, and the cost of packaging is lowered as well.
To make above objectives, features, and advantages of the present invention more apparently, the present invention will be described in detail below with reference to preferable embodiments and the appending drawings. In the drawings, a same reference number may indicate similar or the same elements.
The memory storage module 220 comprises an embedded memory storage device controller such as an eMMC (embedded Multimedia Card) controller 222 and a microcontroller 224 configured for the eMMC controller 222. The memory storage module 220 also has a non-volatile memory 226 and the eMMC controller 222 accesses the non-volatile memory 226 just by the microcontroller 224.
The embedded memory storage device can also be Multimedia Card (MMC), eMCP (eMMC with dynamic random access memory added), Secure Digital Card (SD card), Universal Flash Storage (UFS), Open NAND Flash Interface (ONFI) Flash, and Toggle Interface Flash, or any storage device complying with other standards. Noted that in the context, the embedded memory storage device controller is illustrated by the eMMC controller 222, but is not limited thereto.
The sensor module 230 has a sensor controller 232. As shown in
The primary processor 210 is a central processor unit (CPU) of a smart phone, for example. Preferably, the memory storage module 220 is carried out by an eMMC (embedded memory storage device) module. The sensor module 230 may include a touch sensor, but is not limited thereto. The non-volatile memory 226 may be implemented by a flash memory such as NAND flash and/or NOR flash. The flash memory has a storage array structure which includes a plurality of blocks, each of which consists of a number of pages.
Taking the eMMC controller 222 as the embedded memory storage device controller for example, as shown in the device 20 in
In the first embodiment of the present invention, the non-volatile memory 226 stores the saved data or the hardware execution data relative to the memory storage module 220 and the sensor module 230. When the primary processor 210 accesses the saved data or the hardware execution data relative to the memory storage module 220, the primary processor 210 transmits a read instruction or a write instruction to the eMMC controller 222 of the memory storage module 220 via the MMC bus 211, and the eMMC controller 222 reads, according to the read instruction, the saved data or the hardware execution data relative to the memory storage module 220 from the non-volatile memory 226 via the microcontroller 224 or writes, according to the write instruction, it to the non-volatile memory 226. When the primary processor 210 accesses the saved data or the hardware execution data relative to the sensor module 230, the primary processor 210 transmits a read instruction or a write instruction to the sensor controller 232 of the sensor module 230 via the sensor bus 212 and the microcontroller 224, and the sensor controller 232 reads, according to the read instruction, the saved data or the hardware execution data relative to the sensor module 230 from the non-volatile memory 226 via a transmission interface between sensor controller 232 and the memory storage module 220 by use of the shared microcontroller 224 or writes, according to the write instruction, it to the non-volatile memory 226. The microcontroller 224 is shared and utilized by the eMMC controller 222 of the memory storage module 220 and the sensor controller 232 of the sensor module 230. Meanwhile, function algorithms or other relative computations required by the memory storage module 220 and the sensor module 230 are all executed in the shared microcontroller 224. The non-volatile memory 226 stores the saved data or the hardware execution data relative to the memory storage module 220 and the sensor module 230 at the same time.
In the first embodiment of the present invention, the eMMC controller 222 and the microcontroller 224 of the memory storage module 220 are packaged in a same package body, as shown in
In the first embodiment of the present invention, the memory storage module 220 and the sensor module 230 share the microcontroller 224 and the non-volatile memory 226. Both of the eMMC controller 222 of the memory storage module 220 and the sensor controller 232 of the sensor module 230 share a same microcontroller 224 and operate it to access the data stored in the non-volatile memory 226. The saved data and the hardware execution data relative to both of the eMMC controller 222 and the sensor controller 232 are stored in the non-volatile memory 226. Meanwhile, function algorithms or other relative computations required by the memory storage module 220 or the sensor module 230 are all executed in the shared microcontroller 224. Compared to the conventional electronic devices, the microcontroller 222 and the non-volatile memory 226 of the present embodiment are shared by the memory storage module 220 and the sensor module 230, and therefore it does not need to deploy a separated microcontroller and a separated non-volatile memory for each of the memory storage module and the sensor module as the conventional skills do. Therefore, compared to the conventional skills, the present embodiment reduce the use of silicon intellectual property, the cost of silicon wafer is accordingly reduced, and the cost of packaging is lowered as well.
In different embodiments, referring to
The microcontroller 224 of the present invention can also be disposed in the sensor module 230 in addition to be disposed in the memory storage module 220 as shown in the first embodiment. Please refer to
As shown in
In one embodiment, the primary processor 210 may directly transmit instructions to the microcontroller 224 via the transmission bus 215 or 215′. The microcontroller 224 transfers the instructions to the eMMC controller 222 and the instructions being processed thereby if the instructions are instructions relative to the memory storage module 220. The microcontroller 224 transfers the instructions to the sensor controller 232 via the transmission interface between the sensor module 230 and the packaging structure of the memory storage module 220 and the random access memory 250, and the instructions being processed thereby if the instructions are instructions relative to the sensor controller 230.
Moreover, the eMMC controller 222, the sensor controller 232, the microcontroller 224, and the static random access memory 228 may be integrated in the one design or said one chip and manufactured on the one piece of wafer, as shown in
It should be noted that in other embodiments, the device may have a structure similar to any one of the third embodiment to the seventh embodiment of the present invention but the microcontroller 224 is deployed in the sensor module 230. Integration of the microcontroller and the non-volatile memory in the above embodiments is similar to that in the first embodiment to the seventh embodiment of the present invention, and thus are not detailed herein.
While the preferred embodiments of the present invention have been illustrated and described in detail, various modifications and alterations can be made by persons skilled in this art. The embodiment of the present invention is therefore described in an illustrative but not restrictive sense. It is intended that the present invention should not be limited to the particular forms as illustrated, and that all modifications and alterations which maintain the spirit and realm of the present invention are within the scope as defined in the appended claims.
Number | Date | Country | Kind |
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104100568 | Jan 2015 | TW | national |