Claims
- 1. An integrated fuse, comprising:one or more polysilicon layers; wherein at least one of the layers includes (i) first and second regions arrayed along a longitudinal axis thereof and (ii) a third region positioned between the first and second regions, respective proximal ends of the first and second regions abutting respective sides of the third region; wherein one of the first and second regions includes a first type dopant and the other includes a second type dopant; and wherein the third region is one from the group including (i) an undoped region and (ii) a region having a doping range substantially equal to the first and second regions.
- 2. The integrated fuse of claim 1, wherein the fuse is programmable.
- 3. The integrated fuse of claim 1, wherein a distal end of each of the first and second regions defines respective first and second fuse contact portions.
- 4. The integrated fuse of claim 3, wherein the third region is a fuse neck; andwherein the fuse neck is substantially centered along the longitudinal axis.
- 5. The integrated fuse of claim 1, wherein the first type dopant includes polysilicon having P-type dopants; andwherein the second type dopant includes polysilicon having N-type dopants.
- 6. The integrated fuse of claim 5, wherein the N-type and P-type dopants are within a range of 1×1015 to 5×1016 ions/cm2.
- 7. The integrated fuse of claim 6, wherein the third region includes undoped polysilicon.
- 8. The integrated fuse of claim 6, wherein the third region includes polysilicon having a region of P-type and N-type dopants within a range of 1×1015 to 5×1016 ions/cm2.
- 9. The integrated fuse of claim 5, wherein the N-type and P-type dopants are within a range of 1×1013 to 5×1014 ions/cm2.
- 10. The integrated fuse of claim 9, wherein the third region includes undoped polysilicon.
- 11. The integrated fuse of claim 9, wherein the third region includes polysilicon having a region of P-type and N-type dopants within a range of 1×1013 to 5×1014 ions/cm2.
- 12. An apparatus for making an integrated fuse having a fuse neck region in between two contact regions, comprising:means for forming a polysilicon layer that includes first and second regions having first and second types of dopants, respectively; and means for forming a silicide layer on the polysilicon layer; wherein the first and second regions of the polysilicon layer each have one end located in the fuse neck region, and the first and second types of dopants are different types of dopants, wherein the polysilicon layer further includes a third region in between the first and second regions, the third region being one from the group including (i) an undoped region and (ii) a region having a doping range substantially equal to the first and second regions; and wherein a fusing event is initiated within the fuse neck region when the integrated fuse receives an electrical current stress.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a continuation of the U.S. Non-Provisional Application entitled “An Integrated Fuse With Regions of Different Doping Within The Fuse Neck,” Ser. No. 10/115,013, filed Apr. 4, 2002, now U.S. Pat. No. 6,580,156 which is incorporated by reference herein in its entirety.
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Continuations (1)
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Number |
Date |
Country |
Parent |
10/115013 |
Apr 2002 |
US |
Child |
10/409584 |
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US |