Integrated gate driver

Information

  • Patent Grant
  • 10176752
  • Patent Number
    10,176,752
  • Date Filed
    Tuesday, March 24, 2015
    9 years ago
  • Date Issued
    Tuesday, January 8, 2019
    5 years ago
Abstract
A gate driver suitable for integration with the backplane of an AMOLED display includes first and second clock signal sources producing first and second clock signals each having alternating active and inactive portions configured such that when one of the clock signals is active the other of the clock signals is inactive, and active portions of the first and second clock signals do not overlap. In a daisy chain of circuits for producing gate signals, each of the circuits except the last has an output coupled to the input of the next circuit in the chain. A source of a start token signal is coupled to an input of a first circuit in the daisy chain. Each of the circuits is configured to produce a gate signal one clock cycle after an active portion of one of the clock signals is received.
Description
FIELD OF THE INVENTION

The present disclosure relates generally to AMOLED displays. More specifically, this disclosure relates to gate drivers suitable for integration into the back plane of an AMOLED display, which typically uses thin film transistors (TFTs).


BACKGROUND

Traditionally, when building AMOLED displays, it has been the practice to manufacture the display panel backplane and the gate drivers as separate devices. Doing so allows different manufacturing techniques to be applied to each case. If the same techniques could be used to manufacture the gate driver and the display itself, i.e., if the gate driver could be integrated into the back plane of the display, then they could be manufactured simultaneously with fewer components and less assembly required, leading to lower cost displays.


SUMMARY

In accordance with one embodiment, a gate driver suitable for integration with the backplane of an active matrix organic light emitting diode (AMOLED) display comprises clock signal sources producing first and second clock signals each having alternating active and inactive portions configured such that when one of the clock signals is active the other of the clock signals is inactive, and active portions of the first and second clock signals do not overlap; a daisy chain of circuits for producing gate signals, each of the circuits except the last circuit in the chain having an output coupled to the input of an adjacent circuit in the daisy chain; and a source of a start token signal coupled to an input of a first circuit in the daisy chain; wherein each of the circuits is configured to produce a gate signal one clock cycle after an active portion of one of the clock signals is received.


In one implementation, the gate driver is configured for use with an AMOLED display comprising p-type transistors so that an active signal corresponds to a low voltage and an inactive signal corresponds to a high voltage. The gate signals are active low for selecting or addressing p-type thin film transistors, or active high for selecting or addressing n-type thin film transistors.


Adjacent circuits in the daisy chain produce consecutive gate signals with a predetermined time interval between each pair of consecutive gate signals. The active portions of the first and second clock signals preferably have a predetermined time interval between them, to produce the predetermined time interval between each pair of consecutive gate signals.


In accordance with another embodiment, an integrated gate driver for performing emission operations comprises a source of first and second clock signals each, having alternating active and inactive portions configured such that when one is active the other is inactive and active signals do not overlap; a start token signal source and an inverse start token signal source for input into a first circuit block. Alternating odd and even circuit blocks are daisy chained together such that the output of one circuit block is connected to the input of the next circuit block, and each circuit block receives as inputs both first and second clock signals, wherein each circuit block is configured to produce an active output one clock cycle after an active signal is received and an inactive output at all other times. This gate driver may be configured for use with a display comprising p-type transistors so that an active signal corresponds with a high voltage and an inactive signal corresponds with a low voltage. The alternating circuit blocks are configured to select a line of pixels for two clock cycles in order to allow time for the pixels to settle before being programmed.


The foregoing and additional aspects and embodiments of the present disclosure will be apparent to those of ordinary skill in the art in view of the detailed description of various embodiments and/or aspects, which is made with reference to the drawings, a brief description of which is provided next.





BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other advantages of the disclosure will become apparent upon reading the following detailed description and upon reference to the drawings.



FIG. 1A is a block diagram of a display system using an integrated gate driver.



FIG. 1B is a block diagram of a select signal driver for the array of pixel circuits in the display of FIG. 1A.



FIG. 2A is a circuit diagram of a circuit for use in an odd block of FIG. 1B when configured as an active low select signal driver.



FIG. 2B is a circuit diagram of a circuit for use in an even block of FIG. 1B when configured as an active low select signal driver.



FIG. 2C is a timing diagram illustrating the operation of the circuits of FIGS. 2A and 2B.



FIG. 3A is a circuit diagram of a circuit for use in an odd block of FIG. 1B when configured as an active high select signal driver.



FIG. 3B is a circuit diagram of a circuit for use in an even block of FIG. 1B when configured as an active high select signal driver.



FIG. 3C is a timing diagram illustrating the operation of circuits of FIGS. 3A and 3B.



FIG. 4A is a circuit diagram of a second circuit for use in an odd block of FIG. 1B when configured as an active high select signal driver.



FIG. 4B is a circuit diagram of a second circuit for use in an even block of FIG. 1B when configured as an active high select signal driver.



FIG. 5A is a circuit diagram of a third circuit for use in an odd block of FIG. 1B when configured as an active high select signal driver.



FIG. 5B is a circuit diagram of a third circuit for use in an even block of FIG. 1B when configured as an active high select signal driver.





While the present disclosure is susceptible to various modifications and alternative forms, specific embodiments or implementations have been shown by way of example in the drawings and will be described in detail herein. It should be understood, however, that the disclosure is not intended to be limited to the particular forms disclosed. Rather, the disclosure is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of an invention as defined by the appended claims.


DETAILED DESCRIPTION


FIG. 1A shows a display 10 for use with an integrated gate driver 12. Display 10 comprises an array (m×n) of pixels. FIG. 1B shows a block diagram of an integrated select signal driver 100 for the array of pixel circuits in the display of FIG. 1A. It should be noted that although select driver 100 is shown, and discussed below, as driving rows (1 to n), it may also be implemented to drive columns (1 to m). Select driver 100 comprises a series of alternating odd blocks 101 and even blocks 102 daisy chained together so that the output of each block, e.g., SEL(1), both drives its associated row of pixels and serves as an input to the following block. Accordingly, rows can be selected and driven in sequence. Other inputs clk1 and clk2 from clock signal sources are used to regulate timing and are discussed in greater detail below. A start token signal ST from a start token signal source is used to initiate the row driving sequence.


Exemplary embodiments of select driver 100 are discussed below. In each case, it is assumed that all transistors are p-type transistors, and are therefore active low devices. Those of skill in the art will understand that complementary circuit designs can be used with active high or n-type transistors. Alternatively, a combination of p-type and n-type devices may be used to implement select signal driver 100.



FIGS. 2A and 2B show circuit diagrams for use in odd blocks 201 and even blocks 202 corresponding to blocks 101 and 102 of FIG. 1B when configured as an active low select signal driver suitable for use as a select driver during read or write operations.


Physically, the circuit elements in odd blocks 201 and even blocks 202 are identical. The difference between odd blocks 201 and even blocks 202 is the inputs. The signals clk1 and clk2 play complementary roles in odd and even circuit blocks. It should be noted that in this implementation only one of clk1 and clk2 may be active at any given time; active clock signals do not overlap, but inactive clock signals may overlap during periods where the signals are transitioning. Other combinations of clk1 and clk2 may be used to achieve similar or extra functionality.


In operation a sequence proceeds through several time periods, a subset of which is shown as 280 to 292 in FIG. 2C. It should be noted that some time periods are longer than others and that the sequence proceeds by alternating long and short periods. For example, a longer period 280-281 is followed by a short period 281-282 which is followed by a longer period 282-283. In actual operation, the number of time periods will be related to the number of rows in the display. Vgh is a voltage that corresponds to a high, therefore inactive, signal while Vgl corresponds to a low, therefore active, signal. Vgh and Vgl are either fixed or adjustable voltages provided by the power supply unit (not shown) of the display system 10.


Referring to FIGS. 2A and 2C, the operation of an odd block proceeds as follows. Block 1 will be described as an example.


At 280, Start Token (ST) and clk2 go low, therefore active, while clk1 goes high, therefore inactive. This causes transistor switches Tc, Te and Tg to close. The low ST signal will expose the bottom plate of capacitor Ca to a low signal, bring a low signal to point A 205 and cause transistor switches Ta and Tf to close. This allows a high signal to reach point B 207 which exposes the bottom plate of Cb to a high signal and causes transistor switches Tb and Td to open. Accordingly, SEL(1) goes out high as it is being fed from Vgh via Tc and high clk1 via Ta.


At 281, clk2 goes high, causing Tc, Te and Tg to open.


At 282, clk1 goes low while ST goes high. ST will stay high for the remainder of the sequence. Capacitor Ca will maintain a low signal at point A 205 and keep Ta and Tf closed. Capacitor Cb will maintain a high signal at point B 207 and keep Tb and Td open. Accordingly, SEL(1) output will be low as it is being fed from low clk1 via Ta.


At 283, clk1 goes high causing SEL(1) to go high.


At 284, clk2 goes low causing Tc, Te and Tg to close. The high ST signal will expose the bottom plate of capacitor Ca to a high signal, bring a high signal to point A 205 and cause transistor switches Ta and Tf to open. This brings a low signal, Vgl, to point B 207 which exposes Cb to a low signal and causes Tb and Td to close. Accordingly, SEL(1) goes out high as it is being fed from Vgh via Tb and Tc.


At 285, clk2 goes high causing Tc, Te and Tg to open.


At 286, clk1 goes low. Capacitor Ca will maintain a high signal at point A 205 and keep Ta and Tf open. Capacitor Cb will maintain a low signal at point B 207 and keep Tb and Td close. Accordingly, SEL(1) will remain high since it is being fed from Vgh via Tb.


At 287, clk1 goes high.


Since ST will not change again until the entire sequence needs to be repeated, block 1 will simply repeat the pattern of 284 to 287 until the ST is changed, regardless of the state of clk1 and clk2. For example, the circuit will proceed through the same states from 288-291 as it did from 284-287 and SEL(1) will remain high.


Referring to FIGS. 2B and 2C, the operation of an even block proceeds as follows. Block 2 will be described as an example. It should be noted that the operation of an even block is complementary to the operation of an odd block in that clk1 and clk2 play opposite roles.


At 282, SEL(1) and clk1 go low, therefore active, while clk2 is high, therefore inactive. This causes transistor switches Tc, Te and Tg to close. The low SEL(1) signal will expose the bottom plate of capacitor Ca to a low signal, bring a low signal to point A 206 and cause transistor switches Ta and Tf to close. This allows a high signal to reach point B 208 which exposes the bottom plate of Cb to a high signal and causes Tb and Td to open. Accordingly, SEL(2) goes out high as it is being fed from Vgh via Tc and high clk2 via Ta.


At 283, clk1 goes high, causing Tc, Te and Tg to open. SEL(1) will also go high and stay high for the remainder of the sequence. Capacitor Ca will maintain a low signal at point A 206 and keep Ta and Tf closed. Capacitor Cb will maintain a high signal at point B 208 and keep Tb and Td open.


At 284, SEL(2) and clk2 go low while SEL(1) remains high. Thus, there is a time interval (284-283) between clk1 going high and clk2 going low, and also between SEL(1) going high and SEL (2) going low.


At 285, clk2 goes high causing SEL(2) to go high.


At 286, clk1 goes low causing Tc, Te and Tg to close. The high SEL(1) signal will now expose the bottom plate of capacitor Ca to a high signal, bring a high signal to point A 206 and cause transistor switches Ta and Tf to open. This brings a low signal, Vgl, to point B 208 which exposes the bottom plate of Cb to a low signal and causes Tb and Td to close. Accordingly, SEL(2) goes out high as it is being fed from Vgh via Tb and Tc.


At 287, clk1 goes high causing Tc, Te and Tg to open. Capacitor Ca will maintain a high signal at point A 206 and keep Ta and Tf open. Capacitor Cb will maintain a low signal at point B 208 and keep Tb and Td closed.


At 288, clk2 goes low. Accordingly, SEL(2) will remain high since it is being fed from Vgh via Tb.


At 289, clk2 goes high.


Since SEL(1) will not change again until the entire sequence needs to be repeated, block 2 will simply repeat the pattern of 286 to 289, regardless of the state of clk1 and clk2, until SEL(1) changes. For example, the circuit will proceed through the same states from 290-293 as it did from 286-289 and SEL(2) will remain high.


All the odd blocks with follow the same pattern described for block 1 and all even block will follow the same pattern described for block 2, only delayed since the input of each block is the output of the previous block. In this way, each row of the display 10 may be selected and driven exclusively.


A pixel circuit in an (m×n) array, such as display system 10, may require multiple select signals to operate. An example of typical SEL signals used in a display system is write (WR), read (RD) and emission (EM). The circuits described above in FIGS. 2A-2C are suitable for WR and RD functions, but not for EM functions. Since emission is active low in a display comprising p-type transistors, a signal to tell a row to stop emitting will be active high.



FIGS. 3A and 3B show circuit diagrams for use in odd blocks 301 and even blocks 302 corresponding to 101 and 102 in FIG. 1B when configured as an active high select signal driver. Note that the circuits of FIGS. 3A and 3B are designed to hold EM signals high for twice as long in order to allow time for the components in the pixels to settle before programming.


Physically, the circuit elements in odd blocks 301 and even blocks 302 are identical. The difference between odd blocks 301 and even blocks 302 is the inputs. Clk1 and clk2 play complementary roles in odd/even blocks. It should be noted that only one of clk1 and clk2 may be active at any given time in this implementation; active clock signals do not overlap. Other combinations of clk1 and clk2 may be used to achieve similar or extra functionality.


In operation a sequence proceeds through several time periods, a subset of which are shown as 380 to 392 in FIG. 3C. It should be noted that some time periods are longer than others and that the sequence proceeds by alternating long and short periods. For example, a longer period 380-381 is followed by a short period 381-382 which is followed by a longer period 382-383. In actual operation, the number of time periods will be related to the number of rows in the display system 10. Vgh is a voltage that corresponds to a high, therefore inactive state, signal while Vgl corresponds to a low, therefore active state, signal.


Referring to FIGS. 3A and 3C, the operation of an odd block proceeds as follows. Block 1 will be described as an example. Note that an underscore, “_” indicates a signal in an inverse state. For example, ST and ST_ will always have inverse states; STwill be low when ST is high and vice versa.


At 380, ST_and clk2 go low, while ST and clk1 go high. This causes transistor switches T3, T6, T7 and T10 to close. The high ST signal will expose the bottom plate of capacitor C4 to a high signal, cause T4 to open and bring a high signal to point A 303 which exposes the bottom plate of C1 to a high signal and causes T11, T5 and T2 to open. The low ST_ signal will expose the bottom plate of capacitor C3 to a low signal and cause transistor switch T8 to close and bring a low signal to point B 305 which exposes the bottom plate of C2 to a low signal and causes T12, T9 and T1 to close. Accordingly, EM(1) will be high and EM_(1) will be low.


At 381, clk2 goes high, causing transistors T3, T6, T7 and T10 to close, effectively shutting out ST and ST_signals. Capacitor C4 will maintain a high signal and keep T4 open while C3 will maintain a low signal and keeps T8 closed. Capacitor C2 will maintain a low signal at point B 305 and keep transistors T12, T1 and T9 closed while C1 maintains a high signal at point A 303 and keeps T11, T2 and T5 open. Accordingly, EM(1) will remain high while EM_(1) will remain low.


At 382, clk1 goes low but has no effect on the output of block 1, EM(1) and EM_(1). Before 383, ST goes low and ST_ goes high, but has no effect since the transistors controlled by clk2 are closed.


At 383, clk1 goes high.


At 384, clk2 goes low causing transistor switches T3, T6, T7 and T10 to close. The low ST signal will expose the bottom plate of capacitor C4 to a low signal, cause T4 to close and bring a low signal to point A 303 which exposes the bottom plate of C1 to a low signal and causes T2, T5 and T11 to close. The high ST_signal will expose the bottom plate of capacitor C3 to a high signal, cause T8 to open and bring a high signal to point B 305 which exposes the bottom plate of C2 to a high signal and causes T1, T9 and T12 to open. Consequently, EM(1) will turn low while EM_(1) turns high.


At 385, clk2 goes high, causing T3, T6, T7 and T10 to close. Capacitor C4 will maintain a low signal and keep T4 closed while C3 maintains a high signal and keeps T8 open. Capacitor C2 will maintain a high signal at point B 305 and keep transistor switches T1, T9 and T12 open while C1 maintains a low signal at point A 303 and keeps T2, T5 and T11 closed. Accordingly, EM(1) will remain low while EM_(1) remains high.


At 386, clk1 goes low.


At 387, clk1 goes high but has not effect on the output of block 1, EM(1) and EM_(1).


Since ST and STinputs will not change again until the entire sequence needs to be repeated, block 1 will simply repeat the pattern of 384 to 387, regardless of the state of clk1 and clk2, until the inputs are changed. For example, the circuit will proceed through the same states from 388-391 as it did from 384-387. EM(1) will remain low and EM_(1) will remain high.


Referring to FIGS. 3B and 3C, the operation of an even block proceeds as follows. Block 2 will be described as an example.


At 382, EM_(1) and clk2 go low while EM(1) and clk1 go high. This causes T3, T6, T7 and T10 to close. The high EM(1) signal will expose the bottom plate of capacitor C4 to a high signal, cause T4 to open and bring a high signal to point A 304 which exposes the bottom plate of C1 to a high signal and causes T11, T5 and T2 to open. The low EM_(1) signal will expose the bottom plate of capacitor C3 to a low signal and cause transistor T8 to close and bring a low signal to point B 306 which exposes the bottom plate of C2 to a low signal and causes T12, T9 and T1 to close. Accordingly, EM(2) will go high and EM_(2) will turn low.


At 383, clk1 goes high, causing transistors T3, T6, T7 and T10 to open, effectively isolating the EM(1) and EM_(1) signals into block 2. Capacitor C4 will maintain a high signal and keep T4 open while C3 will maintain a low signal and keep T8 closed. Capacitor C2 will maintain a low signal at point B 306 and keep transistor switches T12, T1 and T9 closed while C1 maintains a high signal at point A 304 and keeps T11, T2 and T5 open. Accordingly, EM(2) will remain high while EM_(2) will remain low.


At 384, clk2 goes low but has not effect on the output, EM(2) and EM(_(2), of block 2.


At 385, clk2 goes high, which also has no effect on the output of block 2.


At 386 clk1 goes low causing transistor switches T3, T6, T7 and T10 to close. The low EM(1) signal will expose the bottom plate of capacitor C4 to a low signal, cause T4 to close and bring a low signal to point A 304 which exposes the bottom plate of C1 to a low signal and causes T2, T5 and T11 to close. The high EM_(1) signal will expose the bottom plate of capacitor C3 to a high signal, cause T8 to open and bring a high signal to point B 306 which exposes the bottom plate of C2 to a high signal and causes T1, T9 and T12 to open. Accordingly, EM(2) will turn low while EM_(2) turns high.


At 387, clk1 goes high, causing T3, T6, T7 and T10 to close. Capacitor C4 will maintain a low signal and keep T4 closed while C3 maintains a high signal and keeps T8 open. Capacitor C2 will maintain a high signal at point B 306 and keep transistors T1, T9 and T12 open while C1 maintains a low signal at point A 304 and keeps T2, T5 and T11 closed. Accordingly, EM(2) will remain low while EM_(2) remains high.


At 388, clk2 goes low and has no effect on the output of block 2.


At 389, clk1 goes high and also has no effect on the output of block 2.


Since EM(1) and EM_(1) inputs will not change again until the entire sequence needs to be repeated, block 2 will simply repeat the pattern of 386 to 389, regardless of the state of clk1 and clk2, until the inputs are changed. For example, the circuit will proceed through the same states from 390-393 as it did from 386-389. EM(2) will remain low and EM_(2) will remain high.


An analogous pattern will occur in subsequent odd blocks. A complementary analogous pattern, with clk1 and clk2 playing opposite roles, will occur in subsequent even blocks.



FIGS. 4A and 4B show circuit diagrams of a second embodiment of odd blocks 401 and even blocks 402 of FIG. 1B when configured as an active high select signal driver. The circuits of FIGS. 4A and 4B are identical to those of FIGS. 3A and 3B except for one connection of capacitor C2. In FIGS. 4A and 4B the terminals of C2 are connected to point B and the EMoutput rather than point B and clk1 or clk2. Clk1 and clk2 now drive EM_(1) through T12. The timing diagram of FIG. 3C also applies to the circuits in FIGS. 4 and 4B.


It has been found that the circuits of FIGS. 4A and 4B are better able to handle variations in T12 than those shown in FIGS. 3A and 3B.



FIGS. 5A and 5B show circuit diagrams of a third embodiment of odd blocks 501 and even blocks 502, corresponding to 101 and 102 of FIG. 1B, when configured as an active high select signal driver. The circuits of FIGS. 5A and 5B are identical to those of FIGS. 3A and 3B except that C1 has been removed and T10 has been replaced by a resistance, R, connected to voltage V1, where V1<Vgl. The circuits shown in FIGS. 5A and 5B provide a more stable voltage at point A.


Physically, the circuit elements in odd blocks 501 and even blocks 502 are identical. The difference between odd blocks 501 and even blocks 502 is the inputs. Clk1 and clk2 play complementary roles in odd/even blocks. It should be noted that only one of clk1 and clk2 may be active at any given time in this implementation; active clock signals do not overlap. Other combination of clk1 and clk2 may be used to achieve similar or extra functionality.


In operation, a sequence proceeds through several time periods, a subset of which are shown as 380 to 392 in FIG. 3C. It should be noted that some time periods are longer than others and that the sequence proceeds by alternating long and short periods. For example, a longer period, 380-381, is followed by a short period, 381-382 which is followed by a longer period, 382-383. In actual operation, the number of time periods will be related to the number of rows in display system 10. Vgh is a voltage that corresponds to a high, therefore inactive state, signal while Vgl corresponds to a low, therefore active state, signal and V1<Vgl.


Referring to FIGS. 5A and 3C, the operation of an odd block proceeds as follows. Block 1 will be described as an example. Note that a “_” indicates an inverse state. For example, ST and STwill always have inverse states; STwill be low when ST is high and vice versa.


At 380, ST_goes low, while ST and clk1 go high. Clk2 is also low at this time. This causes transistors T3, T6 and T7 to close. The high ST signal will expose the bottom plate of capacitor C4 to a high signal and cause T4 to open. The low ST signal will expose the bottom plate of capacitor C3 to a low signal and cause T8 to close and bring a low signal to point B 505 which exposes the bottom plate of C2 to a low signal and causes T12, T9 and T1 to close. Since T8 and T9 are closed, and by design the on-resistance of T8 and T9 is much less than R, a high signal reaches point A, exposes the bottom plate of C1 to a high signal and causes T11, T5 and T2 to open. Accordingly, EM(1) will be high and EM_(1) will be low.


At 381, clk2 goes high, causing transistors T3, T6 and T7 to open, effectively shutting out ST and ST_ signals. Capacitor C4 will maintain a high signal and keep T4 open while C3 will maintain a low signal and keep T8 closed. Capacitor C2 will maintain a low signal at point B 505 and keep T12, T1 and T9 closed. Since T8 and T9 are closed, and by design the on-resistance of T8 and T9 is much less than R, a high signal reaches point A 503, exposes the bottom plate of C1 to a high signal and causes T11, T5 and T2 to open. Accordingly, EM(1) will remain high while EM_(1) will remain low.


At 382, clk1 goes low. Before 383, ST goes low and STgoes high, but has no effect since the transistors controlled by clk2 are open.


At 383, clk1 goes high.


At 384 clk2 goes low causing T3, T6 and T7 to close. The low ST signal will expose the bottom plate of capacitor C4 to a low signal and cause T4 to close. The high ST_signal will expose the bottom plate of capacitor C3 to a high signal, cause T8 to open and bring a high signal to point B 505 which exposes the bottom plate of C2 to a high signal and causes T1, T9 and T12 to open. Since T8 and T9 are open, V1 is the only signal source able to reach point A 503. This brings a low signal to point A 503 which causes T2, T5 and T11 to close. Accordingly, EM(1) will turn low while EM_(1) turns high.


At 385, clk2 goes high, causing T3, T6 and T7 to open. Capacitor C4 will maintain a low signal and keep T4 closed while C3 maintains a high signal and keeps T8 open. Capacitor C2 will maintain a high signal at point B 505 and keep T1, T9 and T12 open. Since T8 and T9 are open, V1 is the only signal source able to reach point A 503. This brings a low signal to point A 503 which causes T2, T5 and T11 to close. Accordingly, EM(1) will remain low while EM_(1) remains high.


At 386, clk1 goes low.


At 387, clk1 goes high and has no effect on the outputs of block 1.


Since ST and ST_ inputs will not change again until the entire sequence needs to be repeated, block 1 will simply repeat the pattern of 384 to 387, regardless of the state of clk1 and clk2, until the inputs are changed. For example, the circuit will proceed through the same states from 388-391 as it did from 384-387. EM(1) will remain low and EM_(1) will remain high.


Referring to FIGS. 5B and 3C, the operation of an even block proceeds as follows. Block 2 will be described as an example.


At 382, clk1 goes low, while EM(1) and clk2 are high. EM_(1) is also low at this time. This causes T3, T6 and T7 to close. The high EM(1) signal will expose the bottom plate of capacitor C4 to a high signal and cause T4 to open. The low EM_(1) signal will expose the bottom plate of capacitor C3 to a low signal, cause T8 to close and bring a low signal to point B 506 which exposes the bottom plate of C2 to a low signal and causes T12, T9 and T1 to close. Since T8 and T9 are closed, and by design the on-resistance of T8 and T9 is much less than R, a high signal reaches point A 504, exposes the bottom plate of C1 to a high signal and causes T11, T5 and T2 to open. Accordingly, EM(2) will go high and EM_(2) will turn low.


At 383, clk1 goes high, causing transistors T3, T6 and T7 to open, effectively isolating the EM(1) and EM_(1) signals. Capacitor C4 will maintain a high signal and keep T4 open while C3 will maintain a low signal and keep T8 closed. Capacitor C2 will maintain a low signal at point B 506 and keep transistors T12, T1 and T9 closed. Since T8 and T9 are closed, and by design the on-resistance of T8 and T9 is much less than R, a high signal reaches point A 504, exposes the bottom plate of C1 to a high signal and causes T11, T5 and T2 to open. Accordingly, EM(2) will remain high while EM_(2) remains low.


At 384, clk2 goes low and has no effect on the output of block 2.


At 385, clk2 goes high which also has no effect on the output of block 2.


At 386 clk1 goes low causing T3, T6 and T7 to close. The low EM(1) signal will expose the bottom plate of capacitor C4 to a low signal and cause T4 to close. The high EM_(1) signal will expose capacitor the bottom plate of C3 to a high signal, cause T8 to open and bring a high signal to point B 506 which exposes the bottom plate of C2 to a high signal and causes T1, T9 and T12 to open. Since T8 and T9 are open, V1 is the only signal source able to reach point A 504. This brings a low signal to point A 504 which causes T2, T5 and T11 to close. Accordingly, EM(2) will turn low while EM_(2) turns high.


At 387, clk1 goes high, causing T3, T6 and T7 to open. Capacitor C4 will maintain a low signal and keep T4 closed while C3 maintains a high signal and keeps T8 open. Capacitor C2 will maintain a high signal at point B 506 and keep T1, T9 and T12 open. Since T8 and T9 are open, V1 is the only signal source able to reach point A 504. This brings a low signal to point A 504 which causes T2, T5 and T11 to close. Accordingly, EM(2) will remain low while EM_(2) remains high.


At 388, clk2 goes low and has no effect on the output of block 2.


At 389, clk1 goes high and also has no effect on the output of block 2.


Since EM(1) and EM (1) inputs will not change again until the entire sequence needs to be repeated, block 2 will simply repeat the pattern of 386 to 389, regardless of the state of clk1 and clk2, until the inputs are changed. For example, the circuit will proceed through the same states from 390-393 as it did from 386-389. EM(2) will remain low and EM_(2) will remain high.


An analogous pattern will occur in subsequent odd blocks. A complementary analogous pattern, with clk1 and clk2 playing opposite roles, will occur in subsequent even blocks.


Other permutations of the circuits shown in FIGS. 5A and 5B include: making resistance R an active element and replacing T5 and T9 with directed connections between their adjacent transistors.


In a display system 10 implementing the integrated gate driver described in FIG. 3, 4 or 5 under normal operating conditions, each row of pixels will be in turn, off and being allowed to settle, off and being programmed and on and emitting. Accordingly, at any given time, one row will be off and settling, one row will be off and being programmed and the remainder will be emitting according to their last programmed state.


Additional functionality can be achieved by varying the inputs. For example, a power-on function, a light-on function and a gate output enable (GOE) function are all possible with any of the circuits described above.


A power-on function can be used whenever display system 10 is first powered up or at any other time that a simultaneous reset of all SEL outputs is desired. In the circuits of FIGS. 2A and 2B, if clk1, clk2 and Vgl are set low while Vgh and ST are set high then the inactive signal will propagate to the entire SEL(1) to SEL(n) of display system 10 and all SEL signals will be deactivated. In the circuits of FIGS. 3A, 3B, 4A, 4B, 5A, and 5B, if clk1, clk2, Vgl and STare set low while Vgh and ST are set high the same result will be achieved. V1 can be allowed to float during this operation.


A light-on function can be used to test the functionality of all the pixels by selecting and driving all rows simultaneously. In the circuits of FIGS. 2A and 2B this can be achieved by setting all of the inputs, clk1, clk2, Vgl, Vgh and ST to low. Light-on can be achieved in the circuits of FIGS. 3A, 3B, 4A, 4B, 5A and 5B by setting inputs clk1, clk2, Vgl, Vgh, ST and ST_ to low. V1 can be allowed to float.


A GOE (gate output enable) function allows an active SEL line to be momentarily deactivated even when a token is present. This can be achieved by altering the clk1 signal input for odd blocks or the clk2 signal input for even blocks. For example, consider the circuit of FIG. 2A, an odd block, as it reaches time 284. Normally, clk2 would rise at 284 causing the token to shift into the next block. However, if clk2 is instead held high, a GOE function can be realized. In this situation, if clk1 goes low again, SEL(1) will be reactivated. This can be used to implement in-pixel compensation or to read out pixel characteristics for external compensation.


While particular implementations and applications of the present disclosure have been illustrated and described, it is to be understood that the present disclosure is not limited to the precise construction and compositions disclosed herein and that various modifications, changes, and variations can be apparent from the foregoing descriptions without departing from the spirit and scope of an invention as defined in the appended claims.

Claims
  • 1. A gate driver suitable for integration with the backplane of an active matrix organic light emitting diode (AMOLED) display, said gate driver comprising clock signal sources producing first and second clock signals each having alternating active and inactive portions configured such that when one of said clock signals is active the other of said clock signals is inactive, and active portions of said first and second clock signals do not overlap;a daisy chain of more than two circuits integrated within said backplane and for producing gate signals, each of said circuits including capacitors and thin film transistors and substantially physically identical to one another and receiving as inputs both said first and second clock signals, each of said circuits receiving over first one or more clock inputs one of said first and second clock signals and receiving over second one or more clock inputs the other of said first and second clock signals, the first one or more clock inputs of each circuit receiving the same clock signal as the second one or more clock inputs of adjacent circuits, and the second one or more clock inputs of each circuit receiving the same clock signal as the first one or more clock inputs of adjacent circuits, each of said circuits except the first circuit in the daisy chain receiving as the only input from said circuits, one or more gate signal outputs, all from only one adjacent circuit of said circuits, and each of said circuits except the last circuit in the daisy chain having an output coupled to an input of an adjacent circuit in the daisy chain; anda source of a start token signal coupled to an input of the first circuit in said daisy chain; wherein each of said circuits is configured to produce a gate signal one clock cycle after an active portion of one of said clock signals is received.
  • 2. The gate driver of claim 1 which is configured for use with an AMOLED display comprising p-type transistors so that an active signal corresponds to a low voltage and an inactive signal corresponds to a high voltage.
  • 3. The gate driver of claim 1 in which said gate signals are active low for selecting or addressing p-type thin film transistors.
  • 4. The gate driver of claim 1 in which said gate signals are active high for selecting or addressing n-type thin film transistors.
  • 5. The gate driver of claim 1 in which said circuits produce consecutive gate signals with a predetermined time gap between each pair of consecutive gate signals.
  • 6. The gate driver of claim 5 in which said active portions of said first and second clock signals have a predetermined time gap between them, to produce said time gap between each pair of consecutive gate signals.
  • 7. An integrated gate driver for performing emission operations of a display, the gate driver comprising: a source of first and second clock signals each, having alternating active and inactive portions configured such that when one is active the other is inactive and active signals do not overlap;a source for a start token signal and an inverse start token signal for input into a first circuit block;integrated within a backplane of the display alternating odd and even circuit blocks of more than two circuit blocks daisy chained together such that an output of one circuit block is connected to an input of the next circuit block and each circuit block receives as inputs both first and second clock signals, each odd and even circuit block including capacitors and thin film transistors and substantially physically identical to one another, each of said circuit blocks receiving over first one or more clock inputs one of said first and second clock signals and receiving over second one or more clock inputs the other of said first and second clock signal, the first one or more clock inputs of each odd circuit block receiving the same clock signal as the second one or more clock inputs of each even circuit block, and the second one or more clock inputs of each odd circuit block receiving the same clock signal as the first one or more clock inputs of each even circuit block, each of said circuit blocks except the first circuit block in the chain receiving as the only input from said circuit blocks, one or more gate signal outputs, all from only one adjacent circuit block of said circuit blocks, wherein each circuit block is configured to produce an active output one clock cycle after an active signal is received and an inactive output at all other times.
  • 8. The integrated gate driver of claim 7 configured for use with a display comprising p-type transistors so that an active signal corresponds with a high voltage and an inactive signal corresponds with a low voltage.
  • 9. The integrated gate driver of claim 7 wherein the alternating circuit blocks are configured to select a line of pixels for two clock cycles in order to allow time for the pixels to settle before being programmed.
  • 10. A method of producing gate signals from a gate driver integrated with the backplane of an active matrix organic light emitting diode (AMOLED) display, said method comprising producing first and second clock signals each having alternating active and inactive portions configured such that when one of said clock signals is active the other of said clock signals is inactive, and active portions of said first and second clock signals do not overlap;producing gate signals from a daisy chain of more than two circuits integrated within said backplane, each of said circuits including capacitors and thin film transistors and substantially physically identical to one another and receiving as inputs both said first and second clock signals, each of said circuits receiving over first one or more clock inputs one of said first and second clock signals and receiving over second one or more clock inputs the other of said first and second clock signals, the first one or more clock inputs of each circuit receiving the same clock signal as the second one or more clock inputs of adjacent circuits, and the second one or more clock inputs of each circuit receiving the same clock signal as the first one or more clock inputs of adjacent circuits, each of said circuits except the first circuit in the daisy chain receiving as the only input from said circuits, one or more gate signal outputs, all from only one adjacent circuit of said circuits, and each of said circuits except the last circuit in the daisy chain having an output coupled to an input of an adjacent circuit in the daisy chain;supplying a start token signal to an input of a first circuit in said daisy chain; and producing a gate signal from each of said circuits, each gate signal being produced one clock cycle after said start token signal or an active portion of one of said clock signals is received.
  • 11. The method of claim 10 in which the AMOLED display comprises p-type transistors so that an active signal corresponds to a low voltage and an inactive signal corresponds to a high voltage.
  • 12. The method of claim 10 in which said gate signals are active low for selecting or addressing p-type thin film transistors.
  • 13. The method of claim 10 in which said gate signals are active high for selecting or addressing n-type thin film transistors.
  • 14. The method of claim 10 which produces consecutive gate signals with a predetermined time gap between each pair of consecutive gate signals.
  • 15. The method of claim 14 in which said active portions of said first and second clock signals have a predetermined time gap between them, to produce said time gap between each pair of consecutive gate signals.
CROSS REFERENCE TO RELATED APPLICATION

This application claims the benefit of U.S. Provisional Application No. 61/969,533, filed Mar. 24, 2014, and U.S. Provisional Application No. 61/975,321, filed Apr. 4, 2014, each of which is hereby incorporated by reference herein in its entirety.

US Referenced Citations (360)
Number Name Date Kind
4354162 Wright Oct 1982 A
4758831 Kasahara et al. Jul 1988 A
4963860 Stewart Oct 1990 A
4975691 Lee Dec 1990 A
4996523 Bell et al. Feb 1991 A
5051739 Hayashida et al. Sep 1991 A
5222082 Plus Jun 1993 A
5266515 Robb et al. Nov 1993 A
5498880 Lee et al. Mar 1996 A
5589847 Lewis Dec 1996 A
5619033 Weisfield Apr 1997 A
5648276 Hara et al. Jul 1997 A
5670973 Bassetti et al. Sep 1997 A
5684365 Tang et al. Nov 1997 A
5686935 Weisbrod Nov 1997 A
5712653 Katoh et al. Jan 1998 A
5714968 Ikeda Feb 1998 A
5747928 Shanks et al. May 1998 A
5748160 Shieh et al. May 1998 A
5784042 Ono et al. Jul 1998 A
5790234 Matsuyama Aug 1998 A
5815303 Berlin Sep 1998 A
5870071 Kawahata Feb 1999 A
5874803 Garbuzov et al. Feb 1999 A
5880582 Sawada Mar 1999 A
5903248 Irwin May 1999 A
5917280 Burrows et al. Jun 1999 A
5923794 McGrath et al. Jul 1999 A
5952789 Stewart et al. Sep 1999 A
5990629 Yamada et al. Nov 1999 A
6023259 Howard et al. Feb 2000 A
6069365 Chow et al. May 2000 A
6081131 Ishii Jun 2000 A
6091203 Kawashima et al. Jul 2000 A
6097360 Holloman Aug 2000 A
6144222 Ho Nov 2000 A
6157583 Starnes et al. Dec 2000 A
6166489 Thompson et al. Dec 2000 A
6177915 Beeteson et al. Jan 2001 B1
6225846 Wada et al. May 2001 B1
6229508 Kane May 2001 B1
6232939 Saito et al. May 2001 B1
6246180 Nishigaki Jun 2001 B1
6252248 Sano et al. Jun 2001 B1
6259424 Kurogane Jul 2001 B1
6274887 Yamazaki et al. Aug 2001 B1
6288696 Holloman Sep 2001 B1
6300928 Kim Oct 2001 B1
6303963 Ohtani et al. Oct 2001 B1
6306694 Yamazaki et al. Oct 2001 B1
6307322 Dawson et al. Oct 2001 B1
6316786 Mueller et al. Nov 2001 B1
6320325 Cok et al. Nov 2001 B1
6323631 Juang Nov 2001 B1
6323832 Nishizawa et al. Nov 2001 B1
6345085 Yeo et al. Feb 2002 B1
6348835 Sato et al. Feb 2002 B1
6365917 Yamazaki Apr 2002 B1
6373453 Yudasaka Apr 2002 B1
6384427 Yamazaki et al. May 2002 B1
6392617 Gleason May 2002 B1
6399988 Yamazaki Jun 2002 B1
6414661 Shen et al. Jul 2002 B1
6420758 Nakajima Jul 2002 B1
6420834 Yamazaki et al. Jul 2002 B2
6420988 Azami et al. Jul 2002 B1
6433488 Bu Aug 2002 B1
6445376 Parrish Sep 2002 B2
6468638 Jacobsen et al. Oct 2002 B2
6489952 Tanaka et al. Dec 2002 B1
6501098 Yamazaki Dec 2002 B2
6501466 Yamagashi et al. Dec 2002 B1
6512271 Yamazaki et al. Jan 2003 B1
6518594 Nakajima et al. Feb 2003 B1
6524895 Yamazaki et al. Feb 2003 B2
6531713 Yamazaki Mar 2003 B1
6559594 Fukunaga et al. May 2003 B2
6573195 Yamazaki et al. Jun 2003 B1
6573584 Nagakari et al. Jun 2003 B1
6576926 Yamazaki et al. Jun 2003 B1
6580408 Bae et al. Jun 2003 B1
6580657 Sanford et al. Jun 2003 B2
6583775 Sekiya et al. Jun 2003 B1
6583776 Yamazaki et al. Jun 2003 B2
6587086 Koyama Jul 2003 B1
6593691 Nishi et al. Jul 2003 B2
6594606 Everitt Jul 2003 B2
6597203 Forbes Jul 2003 B2
6611108 Kimura Aug 2003 B2
6617644 Yamazaki et al. Sep 2003 B1
6618030 Kane et al. Sep 2003 B2
6641933 Yamazaki et al. Nov 2003 B1
6661180 Koyama Dec 2003 B2
6661397 Mikami et al. Dec 2003 B2
6670637 Yamazaki et al. Dec 2003 B2
6677713 Sung Jan 2004 B1
6680577 Inukai et al. Jan 2004 B1
6687266 Ma et al. Feb 2004 B1
6690344 Takeuchi et al. Feb 2004 B1
6693388 Oomura Feb 2004 B2
6693610 Shannon et al. Feb 2004 B2
6697057 Koyama et al. Feb 2004 B2
6720942 Lee et al. Apr 2004 B2
6734636 Sanford et al. May 2004 B2
6738034 Kaneko et al. May 2004 B2
6738035 Fan May 2004 B1
6771028 Winters Aug 2004 B1
6777712 Sanford et al. Aug 2004 B2
6780687 Nakajima et al. Aug 2004 B2
6806638 Lih et al. Oct 2004 B2
6806857 Sempel et al. Oct 2004 B2
6809706 Shimoda Oct 2004 B2
6859193 Yumoto Feb 2005 B1
6861670 Ohtani et al. Mar 2005 B1
6873117 Ishizuka Mar 2005 B2
6873320 Nakamura Mar 2005 B2
6878968 Ohnuma Apr 2005 B1
6909114 Yamazaki Jun 2005 B1
6909419 Zavracky et al. Jun 2005 B2
6919871 Kwon Jul 2005 B2
6937215 Lo Aug 2005 B2
6940214 Komiya et al. Sep 2005 B1
6943500 LeChevalier Sep 2005 B2
6954194 Matsumoto et al. Oct 2005 B2
6956547 Bae et al. Oct 2005 B2
6995510 Murakami et al. Feb 2006 B2
6995519 Arnold et al. Feb 2006 B2
7022556 Adachi Apr 2006 B1
7023408 Chen et al. Apr 2006 B2
7027015 Booth, Jr. et al. Apr 2006 B2
7034793 Sekiya et al. Apr 2006 B2
7088051 Cok Aug 2006 B1
7106285 Naugler Sep 2006 B2
7116058 Lo et al. Oct 2006 B2
7129914 Knapp et al. Oct 2006 B2
7129917 Yamazaki et al. Oct 2006 B2
7141821 Yamazaki et al. Nov 2006 B1
7161566 Cok et al. Jan 2007 B2
7193589 Yoshida et al. Mar 2007 B2
7199516 Seo et al. Apr 2007 B2
7220997 Nakata May 2007 B2
7235810 Yamazaki et al. Jun 2007 B1
7245277 Ishizuka Jul 2007 B2
7248236 Nathan et al. Jul 2007 B2
7264979 Yamagata et al. Sep 2007 B2
7274345 Imamura et al. Sep 2007 B2
7274363 Ishizuka et al. Sep 2007 B2
7279711 Yamazaki et al. Oct 2007 B1
7304621 Oomori et al. Dec 2007 B2
7310092 Imamura Dec 2007 B2
7315295 Kimura Jan 2008 B2
7317429 Shirasaki et al. Jan 2008 B2
7319465 Mikami et al. Jan 2008 B2
7321348 Cok et al. Jan 2008 B2
7339636 Voloschenko et al. Mar 2008 B2
7355574 Leon et al. Apr 2008 B1
7358941 Ono et al. Apr 2008 B2
7402467 Kadono et al. Jul 2008 B1
7414600 Nathan et al. Aug 2008 B2
7432885 Asano et al. Oct 2008 B2
7474285 Kimura Jan 2009 B2
7485478 Yamagata et al. Feb 2009 B2
7502000 Yuki et al. Mar 2009 B2
7535449 Miyazawa May 2009 B2
7554512 Steer Jun 2009 B2
7569849 Nathan et al. Aug 2009 B2
7619594 Hu Nov 2009 B2
7619597 Nathan et al. Nov 2009 B2
7697052 Yamazaki et al. Apr 2010 B1
7825419 Yamagata et al. Nov 2010 B2
7859492 Kohno Dec 2010 B2
7868859 Tomida et al. Jan 2011 B2
7876294 Sasaki et al. Jan 2011 B2
7948170 Striakhilev et al. May 2011 B2
7969390 Yoshida Jun 2011 B2
7995010 Yamazaki et al. Aug 2011 B2
8044893 Nathan et al. Oct 2011 B2
8115707 Nathan et al. Feb 2012 B2
8378362 Heo et al. Feb 2013 B2
8493295 Yamazaki et al. Jul 2013 B2
8497525 Yamagata et al. Jul 2013 B2
20010002703 Koyama Jun 2001 A1
20010004190 Nishi et al. Jun 2001 A1
20010013806 Notani Aug 2001 A1
20010015653 De Jong et al. Aug 2001 A1
20010020926 Kujik Sep 2001 A1
20010026127 Yoneda et al. Oct 2001 A1
20010026179 Saeki Oct 2001 A1
20010026257 Kimura Oct 2001 A1
20010030323 Ikeda Oct 2001 A1
20010033199 Aoki Oct 2001 A1
20010038098 Yamazaki et al. Nov 2001 A1
20010043173 Troutman Nov 2001 A1
20010045929 Prache et al. Nov 2001 A1
20010052606 Sempel et al. Dec 2001 A1
20010052898 Osame et al. Dec 2001 A1
20020000576 Inukai Jan 2002 A1
20020011796 Koyama Jan 2002 A1
20020011799 Kimura Jan 2002 A1
20020011981 Kujik Jan 2002 A1
20020015031 Fujita et al. Feb 2002 A1
20020015032 Koyama et al. Feb 2002 A1
20020030528 Matsumoto et al. Mar 2002 A1
20020030647 Hack et al. Mar 2002 A1
20020036463 Yoneda et al. Mar 2002 A1
20020047852 Inukai et al. Apr 2002 A1
20020048829 Yamazaki et al. Apr 2002 A1
20020050795 Imura May 2002 A1
20020053401 Ishikawa et al. May 2002 A1
20020070909 Asano et al. Jun 2002 A1
20020080108 Wang Jun 2002 A1
20020084463 Sanford et al. Jul 2002 A1
20020101172 Bu Aug 2002 A1
20020101433 McKnight Aug 2002 A1
20020113248 Yamagata et al. Aug 2002 A1
20020122308 Ikeda Sep 2002 A1
20020130686 Forbes Sep 2002 A1
20020154084 Tanaka et al. Oct 2002 A1
20020158823 Zavracky et al. Oct 2002 A1
20020163314 Yamazaki et al. Nov 2002 A1
20020167471 Everitt Nov 2002 A1
20020180369 Koyama Dec 2002 A1
20020180721 Kimura et al. Dec 2002 A1
20020186214 Siwinski Dec 2002 A1
20020190332 Lee et al. Dec 2002 A1
20020190924 Asano et al. Dec 2002 A1
20020190971 Nakamura et al. Dec 2002 A1
20020195967 Kim et al. Dec 2002 A1
20020195968 Sanford et al. Dec 2002 A1
20030020413 Oomura Jan 2003 A1
20030030603 Shimoda Feb 2003 A1
20030062524 Kimura Apr 2003 A1
20030063081 Kimura et al. Apr 2003 A1
20030071804 Yamazaki et al. Apr 2003 A1
20030076048 Rutherford Apr 2003 A1
20030090445 Chen et al. May 2003 A1
20030090447 Kimura May 2003 A1
20030090481 Kimura May 2003 A1
20030095087 Libsch May 2003 A1
20030107560 Yumoto et al. Jun 2003 A1
20030111966 Mikami et al. Jun 2003 A1
20030122745 Miyazawa Jul 2003 A1
20030140958 Yang et al. Jul 2003 A1
20030151569 Lee et al. Aug 2003 A1
20030169219 LeChevalier Sep 2003 A1
20030174152 Noguchi Sep 2003 A1
20030179626 Sanford et al. Sep 2003 A1
20030197663 Lee et al. Oct 2003 A1
20030206060 Suzuki Nov 2003 A1
20030230980 Forrest et al. Dec 2003 A1
20040027063 Nishikawa Feb 2004 A1
20040056604 Shih et al. Mar 2004 A1
20040066357 Kawasaki Apr 2004 A1
20040070557 Asano et al. Apr 2004 A1
20040080262 Park et al. Apr 2004 A1
20040080470 Yamazaki et al. Apr 2004 A1
20040090400 Yoo May 2004 A1
20040108518 Jo Jun 2004 A1
20040113903 Mikami et al. Jun 2004 A1
20040129933 Nathan et al. Jul 2004 A1
20040130516 Nathan et al. Jul 2004 A1
20040135749 Kondakov et al. Jul 2004 A1
20040145547 Oh Jul 2004 A1
20040150592 Mizukoshi et al. Aug 2004 A1
20040150594 Koyama et al. Aug 2004 A1
20040150595 Kasai Aug 2004 A1
20040155841 Kasai Aug 2004 A1
20040174347 Sun et al. Sep 2004 A1
20040174349 Libsch Sep 2004 A1
20040183759 Stevenson et al. Sep 2004 A1
20040189627 Shirasaki et al. Sep 2004 A1
20040196275 Hattori Oct 2004 A1
20040201554 Satoh Oct 2004 A1
20040207615 Yumoto Oct 2004 A1
20040233125 Tanghe et al. Nov 2004 A1
20040239596 Ono et al. Dec 2004 A1
20040252089 Ono et al. Dec 2004 A1
20040257355 Naugler Dec 2004 A1
20040263437 Hattori Dec 2004 A1
20050007357 Yamashita et al. Jan 2005 A1
20050030267 Tanghe et al. Feb 2005 A1
20050035709 Furuie et al. Feb 2005 A1
20050067970 Libsch et al. Mar 2005 A1
20050067971 Kane Mar 2005 A1
20050068270 Awakura Mar 2005 A1
20050088085 Nishikawa et al. Apr 2005 A1
20050088103 Kageyama et al. Apr 2005 A1
20050110420 Arnold et al. May 2005 A1
20050117096 Voloschenko et al. Jun 2005 A1
20050140598 Kim et al. Jun 2005 A1
20050140610 Smith et al. Jun 2005 A1
20050145891 Abe Jul 2005 A1
20050156831 Yamazaki et al. Jul 2005 A1
20050168416 Hashimoto et al. Aug 2005 A1
20050206590 Sasaki et al. Sep 2005 A1
20050225686 Brummack et al. Oct 2005 A1
20050260777 Brabec et al. Nov 2005 A1
20050269959 Uchino et al. Dec 2005 A1
20050269960 Ono et al. Dec 2005 A1
20050285822 Reddy et al. Dec 2005 A1
20050285824 Shin Dec 2005 A1
20050285825 Eom et al. Dec 2005 A1
20060007072 Choi et al. Jan 2006 A1
20060012310 Chen et al. Jan 2006 A1
20060027807 Nathan et al. Feb 2006 A1
20060030084 Young Feb 2006 A1
20060038758 Routley et al. Feb 2006 A1
20060044227 Hadcock Mar 2006 A1
20060066527 Chou Mar 2006 A1
20060092185 Jo et al. May 2006 A1
20060221042 Cho Oct 2006 A1
20060232522 Roy et al. Oct 2006 A1
20060261841 Fish Nov 2006 A1
20060264143 Lee et al. Nov 2006 A1
20060273997 Nathan et al. Dec 2006 A1
20060284801 Yoon et al. Dec 2006 A1
20070001937 Park et al. Jan 2007 A1
20070001939 Hashimoto et al. Jan 2007 A1
20070008268 Park et al. Jan 2007 A1
20070008297 Bassetti Jan 2007 A1
20070046195 Chin et al. Mar 2007 A1
20070069998 Naugler et al. Mar 2007 A1
20070080905 Takahara Apr 2007 A1
20070080906 Tanabe Apr 2007 A1
20070080908 Nathan et al. Apr 2007 A1
20070080918 Kawachi et al. Apr 2007 A1
20070103419 Uchino et al. May 2007 A1
20070182671 Nathan et al. Aug 2007 A1
20070273294 Nagayama Nov 2007 A1
20070285359 Ono Dec 2007 A1
20070296672 Kim et al. Dec 2007 A1
20080042948 Yamashita et al. Feb 2008 A1
20080055209 Cok Mar 2008 A1
20080074413 Ogura Mar 2008 A1
20080088549 Nathan et al. Apr 2008 A1
20080101529 Tobita May 2008 A1
20080122803 Izadi et al. May 2008 A1
20080230118 Nakatani et al. Sep 2008 A1
20090032807 Shinohara et al. Feb 2009 A1
20090051283 Cok et al. Feb 2009 A1
20090160743 Tomida et al. Jun 2009 A1
20090162961 Deane Jun 2009 A1
20090174628 Wang et al. Jul 2009 A1
20090213046 Nam Aug 2009 A1
20100052524 Kinoshita Mar 2010 A1
20100078230 Rosenblatt et al. Apr 2010 A1
20100079711 Tanaka Apr 2010 A1
20100097335 Jung et al. Apr 2010 A1
20100133994 Song et al. Jun 2010 A1
20100134456 Oyamada Jun 2010 A1
20100156279 Tamura et al. Jun 2010 A1
20100237374 Chu et al. Sep 2010 A1
20100328294 Sasaki et al. Dec 2010 A1
20110090210 Sasaki et al. Apr 2011 A1
20110133636 Matsuo et al. Jun 2011 A1
20110180825 Lee et al. Jul 2011 A1
20120212468 Govil Aug 2012 A1
20130009930 Cho et al. Jan 2013 A1
20130032831 Chaji et al. Feb 2013 A1
20130113785 Sumi May 2013 A1
Foreign Referenced Citations (83)
Number Date Country
1294034 Jan 1992 CA
2109951 Nov 1992 CA
2 249 592 Jul 1998 CA
2 368 386 Sep 1999 CA
2 242 720 Jan 2000 CA
2 354 018 Jun 2000 CA
2 436 451 Aug 2002 CA
2 438 577 Aug 2002 CA
2 483 645 Dec 2003 CA
2 463 653 Jan 2004 CA
2498136 Mar 2004 CA
2522396 Nov 2004 CA
2443206 Mar 2005 CA
2472671 Dec 2005 CA
2567076 Jan 2006 CA
2526782 Apr 2006 CA
1381032 Nov 2002 CN
1448908 Oct 2003 CN
20 2006 005427 Jun 2006 DE
0 940 796 Sep 1999 EP
1 028 471 Aug 2000 EP
1 103 947 May 2001 EP
1 130 565 Sep 2001 EP
1 184 833 Mar 2002 EP
1 194 013 Apr 2002 EP
1 310 939 May 2003 EP
1 335 430 Aug 2003 EP
1 372 136 Dec 2003 EP
1 381 019 Jan 2004 EP
1 418 566 May 2004 EP
1 429 312 Jun 2004 EP
1 439 520 Jul 2004 EP
1 465 143 Oct 2004 EP
1 467 408 Oct 2004 EP
1 517 290 Mar 2005 EP
1 521 203 Apr 2005 EP
2317499 May 2011 EP
2 205 431 Dec 1988 GB
09 090405 Apr 1997 JP
10-153759 Jun 1998 JP
10-254410 Sep 1998 JP
11 231805 Aug 1999 JP
11-282419 Oct 1999 JP
2000056847 Feb 2000 JP
2000-077192 Mar 2000 JP
2000-089198 Mar 2000 JP
2000-352941 Dec 2000 JP
2002-91376 Mar 2002 JP
2002-268576 Sep 2002 JP
2002-278513 Sep 2002 JP
2002-333862 Nov 2002 JP
2003-022035 Jan 2003 JP
2003-076331 Mar 2003 JP
2003-150082 May 2003 JP
2003-177709 Jun 2003 JP
2003-271095 Sep 2003 JP
2003-308046 Oct 2003 JP
2005-057217 Mar 2005 JP
2006065148 Mar 2006 JP
2009282158 Dec 2009 JP
485337 May 2002 TW
502233 Sep 2002 TW
538650 Jun 2003 TW
569173 Jan 2004 TW
WO 9425954 Nov 1994 WO
WO 9948079 Sep 1999 WO
WO 0127910 Apr 2001 WO
WO 02067327 Aug 2002 WO
WO 03034389 Apr 2003 WO
WO 03063124 Jul 2003 WO
WO 03077231 Sep 2003 WO
WO 03105117 Dec 2003 WO
WO 2004003877 Jan 2004 WO
WO 2004034364 Apr 2004 WO
WO 2005022498 Mar 2005 WO
WO 2005029455 Mar 2005 WO
WO 2005055185 Jun 2005 WO
WO 2006053424 May 2006 WO
WO 2006063448 Jun 2006 WO
WO 2006137337 Dec 2006 WO
WO 2007003877 Jan 2007 WO
WO 2007079572 Jul 2007 WO
WO 2010023270 Mar 2010 WO
Non-Patent Literature Citations (81)
Entry
Ahnood et al.: “Effect of threshold voltage instability on field effect mobility in thin film transistors deduced from constant current measurements”; dated Aug. 2009 (3 pages).
Alexander et al.: “Pixel circuits and drive schemes for glass and elastic AMOLED displays”; dated Jul. 2005 (9 pages).
Alexander et al.: “Unique Electrical Measurement Technology for Compensation, Inspection, and Process Diagnostics of AMOLED HDTV”; dated May 2010 (4 pages).
Ashtiani et al.: “AMOLED Pixel Circuit With Electronic Compensation of Luminance Degradation”; dated Mar. 2007 (4 pages).
Chaji et al.: “A Current-Mode Comparator for Digital Calibration of Amorphous Silicon AMOLED Displays”; dated Jul. 2008 (5 pages).
Chaji et al.: “A fast settling current driver based on the CCII for AMOLED displays”; dated Dec. 2009 (6 pages).
Chaji et al.: “A Low-Cost Stable Amorphous Silicon AMOLED Display with Full V˜T- and V˜O˜L˜E˜D Shift Compensation”; dated May 2007 (4 pages).
Chaji et al.: “A low-power driving scheme for a-Si:H active-matrix organic light-emitting diode displays”; dated Jun. 2005 (4 pages).
Chaji et al.: “A low-power high-performance digital circuit for deep submicron technologies”; dated Jun. 2005 (4 pages).
Chaji et al.: “A novel a-Si:H AMOLED pixel circuit based on short-term stress stability of a-Si:H TFTs”; dated Oct. 2005 (3 pages).
Chaji et al.: “A Novel Driving Scheme and Pixel Circuit for AMOLED Displays”; dated Jun. 2006 (4 pages).
Chaji et al.: “A novel driving scheme for high-resolution large-area a-Si:H AMOLED displays”; dated Aug. 2005 (4 pages).
Chaji et al.: “A Stable Voltage-Programmed Pixel Circuit for a-Si:H AMOLED Displays”; dated Dec. 2006 (12 pages).
Chaji et al.: “A Sub-μA fast-settling current-programmed pixel circuit for AMOLED displays”; dated Sep. 2007.
Chaji et al.: “An Enhanced and Simplified Optical Feedback Pixel Circuit for AMOLED Displays”; dated Oct. 2006.
Chaji et al.: “Compensation technique for DC and transient instability of thin film transistor circuits for large-area devices”; dated Aug. 2008.
Chaji et al.: “Driving scheme for stable operation of 2-TFT a-Si AMOLED pixel”; dated Apr. 2005 (2 pages).
Chaji et al.: “Dynamic-effect compensating technique for stable a-Si:H AMOLED displays”; dated Aug. 2005 (4 pages).
Chaji et al.: “Electrical Compensation of OLED Luminance Degradation”; dated Dec. 2007 (3 pages).
Chaji et al.: “eUTDSP: a design study of a new VLIW-based DSP architecture”; dated My 2003 (4 pages).
Chaji et al.: “Fast and Offset-Leakage Insensitive Current-Mode Line Driver for Active Matrix Displays and Sensors”; dated Feb. 2009 (8 pages).
Chaji et al.: “High Speed Low Power Adder Design With a New Logic Style: Pseudo Dynamic Logic (SDL)”; dated Oct. 2001 (4 pages).
Chaji et al.: “High-precision, fast current source for large-area current-programmed a-Si flat panels”; dated Sep. 2006 (4 pages).
Chaji et al.: “Low-Cost AMOLED Television with IGNIS Compensating Technology”; dated May 2008 (4 pages).
Chaji et al.: “Low-Cost Stable a-Si:H AMOLED Display for Portable Applications”; dated Jun. 2006 (4 pages).
Chaji et al.: “Low-Power Low-Cost Voltage-Programmed a-Si:H AMOLED Display”; dated Jun. 2008 (5 pages).
Chaji et al.: “Merged phototransistor pixel with enhanced near infrared response and flicker noise reduction for biomolecular imaging”; dated Nov. 2008 (3 pages).
Chaji et al.: “Parallel Addressing Scheme for Voltage-Programmed Active-Matrix OLED Displays”; dated May 2007 (6 pages).
Chaji et al.: “Pseudo dynamic logic (SDL): a high-speed and low-power dynamic logic family”; dated 2002 (4 pages).
Chaji et al.: “Stable a-Si:H circuits based on short-term stress stability of amorphous silicon thin film transistors”; dated May 2006 (4 pages).
Chaji et al.: “Stable Pixel Circuit for Small-Area High- Resolution a-Si:H AMOLED Displays”; dated Oct. 2008 (6 pages).
Chaji et al.: “Stable RGBW AMOLED display with OLED degradation compensation using electrical feedback”; dated Feb. 2010 (2 pages).
Chaji et al.: “Thin-Film Transistor Integration for Biomedical Imaging and AMOLED Displays”; dated 2008 (177 pages).
European Search Report and Written Opinion for Application No. 08 86 5338 dated Nov. 2, 2011 (7 pages).
European Search Report for European Application No. EP 04 78 6661 dated Mar. 9, 2009.
European Search Report for European Application No. EP 05 75 9141 dated Oct. 30, 2009.
European Search Report for European Application No. EP 05 82 1114 dated Mar. 27, 2009.
European Search Report for European Application No. EP 07 71 9579 dated May 20, 2009.
European Search Report dated Mar. 26, 2012 in corresponding European Patent Application No. 10000421.7 (6 pages).
Extended European Search Report dated Apr. 27, 2011 issued during prosecution of European patent application No. 09733076.5 (13 pages).
Goh et al., “A New a-Si:H Thin Film Transistor Pixel Circul for Active-Matrix Organic Light-Emitting Diodes”, IEEE Electron Device Letters, vol. 24, No. 9, Sep. 2003, 4 pages.
International Search Report for International Application No. PCT/CA02/00180 dated Jul. 31, 2002 (3 pages).
International Search Report for International Application No. PCT/CA2004/001741 dated Feb. 21, 2005.
International Search Report for International Application No. PCT/CA2005/001844 dated Mar. 28, 2006 (2 pages).
International Search Report for International Application No. PCT/CA2005/001007 dated Oct. 18, 2005.
International Search Report for International Application No. PCT/CA2007/000652 dated Jul. 25, 2007.
International Search Report for International Application No. PCT/CA2008/002307, dated Apr. 28. 2009 (3 pages).
International Search Report for International Application No. PCT/IB2011/055135, Canadian Patent Office, dated Apr. 16, 2012 (5 pages).
International Search Report dated Jul. 30, 2009 for International Application No. PCT/CA2009/000501 (4 pages).
Jafarabadiashtiani et al.: “A New Driving Method for a-Si AMOLED Displays Based on Voltage Feedback”; dated 2005 (4 pages).
Lee et al.: “Ambipolar Thin-Film Transistors Fabricated by PECVD Nanocrystalline Silicon”; dated 2006 (6 pages).
Ma e y et al: “Organic Light-Emitting Diode/Thin Film Transistor Integration for foldable Displays” Conference record of the 1997 International display research conference and international workshops on LCD technology and emissive technology. Toronto, Sep. 15-19, 1997 (6 pages).
Matsueda y et al.: “35.1: 2.5-in. AMOLED with Integrated 6-bit Gamma Compensated Digital Data Driver”; dated May 2004.
Nathan et al.: “Backplane Requirements for Active Matrix Organic Light Emitting Diode Displays”; dated 2006 (16 pages).
Nathan et al.: “Call for papers second international workshop on compact thin-film transistor (TFT) modeling for circuit simulation”; dated Sep. 2009 (1 page).
Nathan et al.: “Driving schemes for a-Si and LTPS AMOLED displays”; dated Dec. 2005 (11 pages).
Nathan et al.: “Invited Paper: a -Si for AMOLED—Meeting the Performance and Cost Demands of Display Applications (Cell Phone to HDTV)”, dated 2006 (4 pages).
Nathan et al.: “Thin film imaging technology on glass and plastic” ICM 2000, Proceedings of the 12th International Conference on Microelectronics, (IEEE Cat. No. 00EX453), Tehran Iran; dated Oct. 31-Nov. 2, 2000, pp. 11-14, ISBN: 964-360-057-2, p. 13, col. 1, line 11-48; (4 pages).
Nathan et al., “Amorphous Silicon Thin Film Transistor Circuit Integration for Organic LED Displays on Glass and Plastic”, IEEE Journal of Solid-State Circuits, vol. 39, No. 9, Sep. 2004, pp. 1477-1486.
Office Action issued in Chinese Patent Application 200910246264.4 dated Jul. 5, 2013; 8 pages.
Patent Abstracts of Japan, vol. 2000, No. 09, Oct. 13, 2000—JP 2000 172199 A, Jun. 3, 2000, abstract.
Patent Abstracts of Japan, vol. 2002, No. 03, Apr. 3, 2002 (Apr. 4, 2004 & JP 2001 318627 A (Semiconductor EnergyLab DO LTD), Nov. 16, 2001, abstract, paragraphs '01331-01801, paragraph '01691, paragraph '01701, paragraph '01721 and figure 10.
Philipp: “Charge transfer sensing” Sensor Review, vol. 19, No. 2, Dec. 31, 1999 (Dec. 31, 1999), 10 pages.
Rafati et al.: “Comparison of a 17 b multiplier in Dual-rail domino and in Dual-rail D L (D L) logic styles”; dated 2002 (4 pages).
Safavaian et al.: “Three-TFT image sensor for real-time digital X-ray imaging”; dated Feb. 2, 2006 (2 pages).
Safavian et al.: “3-TFT active pixel sensor with correlated double sampling readout circuit for real-time medical x-ray imaging”; dated Jun. 2006 (4 pages).
Safavian et al.: “A novel current scaling active pixel sensor with correlated double sampling readout circuit for real time medical x-ray imaging”; dated May 2007 (7 pages).
Safavian et al.: “A novel hybrid active-passive pixel with correlated double sampling CMOS readout circuit for medical x-ray imaging”; dated May 2008 (4 pages).
Safavian et al.: “Self-compensated a-Si:H detector with current-mode readout circuit for digital X-ray fluoroscopy”; dated Aug. 2005 (4 pages).
Safavian et al.: “TFT active image sensor with current-mode readout circuit for digital x-ray fluoroscopy [5969D-82]”; dated Sep. 2005 (9 pages).
Sanford, James L., et al., “4.2 TFT AMOLED Pixel Circuits and Driving Methods”, SID 03 Digest, ISSN/0003, 2003, pp. 10-13.
Stewart M. et al., “Polysilicon TFT technology for active matrix OLED displays” IEEE transactions on electron devices, vol. 48, No. 5; dated May 2001 (7 pages).
Tatsuya Sasaoka et al., 24.4L; Late-News Paper: A 13.0-inch AM-Oled Display with Top Emitting Structure and Adaptive Current Mode Programmed Pixel Circuit (TAC), SID 01 Digest, (2001), pp. 384-387.
Vygranenko et al.: “Stability of indium-oxide thin-film transistors by reactive ion beam assisted deposition”; dated 2009.
Wang et al.: “Indium oxides by reactive ion beam assisted evaporation: From material study to device application”; dated Mar. 2009 (6 pages).
Written Opinion dated Jul. 30, 2009 for International Application No. PCT/CA2009/000501 (6 pages).
Yi He et al., “Current-Source a-Si:H Thin Film Transistor Circuit for Active-Matrix Organic Light-Emitting Displays”, IEEE Electron Device Letters, vol. 21, No. 12, Dec. 2000, pp. 590-592.
Zhiguo Meng et al; “24.3: Active-Matrix Organic Light-Emitting Diode Display implemented Using Metal-Induced Unilaterally Crystallized Polycrystalline Silicon Thin-Film Transistors”, SID 01Digest, (2001), pp. 380-383.
International Search Report for Application No. PCT/IB2014/059409, Canadian Intellectual Property Office, dated Jun. 12, 2014 (4 pages).
Written Opinion for Application No. PCT/IB2014/059409, Canadian Intellectual Property Office, dated Jun. 12, 2014 (5 pages).
Extended European Search Report for Application No. EP 14181848.4, dated Mar. 5, 2015, (9 pages).
Related Publications (1)
Number Date Country
20150269883 A1 Sep 2015 US
Provisional Applications (2)
Number Date Country
61975321 Apr 2014 US
61969533 Mar 2014 US