Number | Date | Country | Kind |
---|---|---|---|
5-254217 | Oct 1993 | JPX |
Number | Name | Date | Kind |
---|---|---|---|
4322736 | Sasaki et al. | Mar 1982 | |
4874719 | Kohyama et al. | Oct 1989 | |
5237187 | Suwanai et al. | Aug 1993 | |
5294822 | Verrett | Mar 1994 |
Number | Date | Country |
---|---|---|
0018175 | Oct 1980 | EPX |
0056908 | Aug 1982 | EPX |
0349107 | Jan 1990 | EPX |
4306322 | Sep 1993 | DEX |
59-208856 | Nov 1986 | JPX |
1-120863 | May 1989 | JPX |
1-313972 | Dec 1989 | JPX |
2-40935 | Feb 1990 | JPX |
2-249264 | Oct 1990 | JPX |
3-041727 | Feb 1991 | JPX |
3-292767 | Dec 1991 | JPX |
4-62870 | Feb 1992 | JPX |
4-345065 | Dec 1992 | JPX |
Entry |
---|
1987 Symposium on VLSL Technology, Digest of Technical Papers, p. 93 (A High Density 4Mbit dRAM Process Using a Fully Overlapping Bitline Contact (FOBIC) Trench Cell, K. H. Kusters, et al. (1987). |