Claims
- 1. A method, comprising:
depositing a material on a patterned metal film layer affixed to a substrate, the patterned metal film layer comprising micro-mirror and no-micro-mirror regions; chemically and mechanically polishing the material to a predetermined thickness; and etching away a first portion of the material, such that a second portion of the material remains deposited upon the no-micro-mirror region of the patterned metal film.
- 2. The method of claim 1, further comprising:
coating the patterned metal film and the second portion with an anti-reflective film.
- 3. The method of claim 2, further comprising:
seating a transparent plate upon the second portion, wherein the transparent plate is equidistant from the substrate at all points of the substrate.
- 4. The method of claim 3, further comprising:
adding a liquid crystal material to a space between the patterned metal film and the transparent plate.
- 5. The method of claim 1, further comprising:
grinding a groove into the deposited material, the groove being of a predetermined depth, wherein the groove indicates how much of the material is to be chemically and mechanically polished.
- 6. The method of claim 2, coating the patterned metal film and the second portion with an anti-reflective film further comprising:
depositing a layer of silicon oxide to the patterned metal film and the second portion; and depositing a layer of silicon nitride to the patterned metal film and the second portion.
- 7. The method of claim 1, wherein the material comprises silicon nitride and the second portion is cross-shaped.
- 8. The method of claim 2, coating the patterned metal film and the second portion with an anti-reflective film further comprising:
coating the patterned metal film and the second portion with silicon dioxide.
- 9. A method, comprising:
depositing a layer of silicon nitride on a patterned metal film, the patterned metal film, the patterned metal film comprising a plurality of micro-mirrors arranged in pixel regions, the patterned metal film further comprising no-pixel regions; polishing the silicon nitride layer to a uniform thickness on the patterned metal film, wherein the polishing causes a sub-layer of a predetermined thickness to be removed from the patterned metal film; generating a plurality of spacer patterns over the silicon nitride layer, wherein the spacer patterns are disposed over the no-pixel regions; and removing the silicon nitride layer from the patterned metal film, except where the silicon nitride layer is disposed beneath the plurality of spacer patterns, such that the remaining silicon nitride forms a plurality of spacers.
- 10. The method of claim 9, further comprising:
depositing an anti-reflective coating on the plurality of spacers and the exposed patterned metal film.
- 11. The method of claim 10, further comprising:
depositing a silicon oxide coating on the plurality of spacers and the exposed patterned metal film.
- 12. The method of claim 9, polishing the silver nitride layer further comprising chemically and mechanically polishing the silver nitride layer.
- 13. The method of claim 9, generating a plurality of spacer patterns over the silicon nitride layer further comprising disposing the plurality of spacer patterns upon the silicon nitride layer using lithography and etching techniques.
- 14. The method of claim 9, further comprising:
grinding a groove in the silicon nitride layer before polishing, the groove having the predetermined thickness within the layer.
- 15. A method, comprising:
depositing a material upon a patterned metal film, the patterned metal film being disposed upon a substrate, the patterned metal film including a pixel region and a no-pixel region, a plurality of micro-mirrors being disposed in the pixel region, wherein the material is disposed over both the pixel region and the no-pixel region of the substrate; and removing the material from the pixel region of the patterned metal film such that a remaining material is disposed over the no-pixel region, wherein the remaining material has a uniform predetermined thickness all along the substrate.
- 16. The method of claim 15, removing the material further comprising:
disposing a pattern along the no-pixel region; and sculpting the material away from the patterned metal film, except where the pattern is disposed, such that the patterned metal film in the pixel region is exposed.
- 17. The method of claim 16, further comprising:
depositing a silicon dioxide coating on the remaining material and the exposed patterned metal film.
- 18. The method of claim 17, further comprising:
depositing a silicon nitride film on the silicon dioxide deposit.
- 19. The method of claim 15, further comprising:
chemically and mechanically polishing the deposited material, until the material has the predetermined uniform thickness.
- 20. The method of claim 19, further comprising:
marking the predetermined uniform thickness of the deposited material before chemically and mechanically polishing the deposited material.
Parent Case Info
[0001] This application is a divisional of application Ser. No. 10/369,074, filed in Feb. 18, 2003.
Divisions (1)
|
Number |
Date |
Country |
Parent |
10369074 |
Feb 2003 |
US |
Child |
10867405 |
Jun 2004 |
US |