The present teachings generally relate to electronic circuits, and more specifically to apparatus and method for control of roll off of interdigitated radio frequency (RF) filters.
Generally, in RF circuits and applications, there is a need for small low loss filters with sharp roll off to handle RF power. The frequency response of RF filters may degrade due to parasitics. These parasitics cause the insertion loss of the filter to decrease at higher frequencies, thus reducing the selectivity of the filter at those frequencies. The reduction of insertion loss at higher frequencies is also referred to as flyback. Historically RF filters are fairly large because they are built with passive components which consume a lot of space. Since space if often correlated with cost, small size may be desired for low cost solutions.
Accordingly, there is a need for method and apparatus for control of roll off of RF filters. The control of roll off of an RF filter would enable the RF filter to exhibit better flyback performance.
Various embodiments of apparatus and method and for control of roll off of interdigitated RF filters are disclosed.
According to a first aspect of the present disclosure, a radio frequency (RF) interdigitated RF filter is provided, comprising: a plurality of input fingers connected to an input node; and a plurality of output fingers connected to an output node, wherein at least one output finger is connected to the input node, and/or at least one input finger is connected to the output node.
According to a second aspect of the present disclosure, a method of filtering a signal is disclosed, comprising: providing, between an input node and an output one, an electronic structure by interleaving a plurality of input fingers connected to the input node with a plurality of output fingers connected with the output node; connecting at least one output finger to the input node or at least one input finger the output node; and applying the signal at the input node, thereby filtering the signal to generate a filtered signal at the output node.
Further aspects of the disclosure are shown in the specification, claims and drawings of the present application.
The disclosed apparatus, in accordance with one or more various embodiments, are described with reference to the following figures. The drawings are provided for purposes of illustration only and merely depict examples of some embodiments of the disclosed method and apparatus. These drawings are provided to facilitate the reader's understanding of the disclosed method and apparatus. They should not be considered to limit the breadth, scope, or applicability of the claimed invention. It should be noted that for clarity and ease of illustration these drawings are not necessarily made to scale.
Like reference numbers and designations in the various drawings indicate like elements.
Throughout this document the term “input node” is used to refer to a section of an interdigitated RF filter including input fingers (see for example
The RF interdigitated RF filter according to the present disclosure provides solutions to the problem of flyback phenomenon in interdigitated RF filters, while providing low loss and sharp roll off of the RF characteristics.
The direct connection of the bottom finger 208 of the output to the input causes the interdigitated RF filter to have a roll off characteristic as a function of frequency where the roll of is sharp and there is very little flyback. The structure acts as a lowpass filter.
It will be understood by those skilled in the art that this technique of directly connecting a bottom output finger to the input can be used by directly connecting the top output finger to the input, instead of connecting the bottom output finger to the input.
Differential or balanced implementations of the filter structure are also possible.
Referring back to the embodiment of
It will be understood by those skilled in the art that these interdigitated structures can be repeated on lower metal layers as is typically done in IC design to increase capacitor density for MOM capacitors.
It will also be understood by those skilled in the art that a single metal layer can be used to connect the output fingers of an interdigitated capacitor to the input, whereas in other cases multiple metal layers may be used to connect the output fingers of an interdigitated capacitor to the input. It will be further understood by those skilled in the art that the approaches in accordance with the present disclosure are not limited to integrated circuits (IC), and can be employed in circuits that are built in laminate or in low temperature co-fired ceramics (LTCC)
In accordance with various embodiments of the present disclosure, interdigitated RF filters may be built wherein:
The person skilled in the art will understand that, RF interdigitated capacitors according to the present disclosure may be implemented:
As should be readily apparent to one of ordinary skill in the art, various embodiments of the invention can be implemented to meet a wide variety of specifications. Unless otherwise noted above, selection of suitable component values is a matter of design choice and various embodiments of the invention may be implemented in any suitable IC technology (including but not limited to MOSFET structures), or in hybrid or discrete circuit forms. Integrated circuit embodiments may be fabricated using any suitable substrates and processes, including but not limited to standard bulk silicon, silicon-on-insulator (SOI), and silicon-on-sapphire (SOS). Unless otherwise noted above, the presently claimed subject matter may be implemented in other transistor technologies such as bipolar, GaAs HBT, GaN HEMT, GaAs pHEMT, and MESFET technologies. The presently claimed subject matter has been shown in relation to NMOS RF switches, however the presently claimed subject matter may be implemented in relation with PMOS RF switches as well. The Fabrication in CMOS on SOI or SOS processes enables circuits with low power consumption, the ability to withstand high power signals during operation due to FET stacking, good linearity, and high frequency operation (i.e., radio frequencies up to and exceeding 50 GHz). Monolithic IC implementation is particularly useful since parasitic capacitances generally can be kept low (or at a minimum, kept uniform across all units, permitting them to be compensated) by careful design.
A number of embodiments of the invention have been described. It is to be understood that various modifications may be made without departing from the spirit and scope of the invention. For example, some of the steps described above may be order independent, and thus can be performed in an order different from that described. Further, some of the steps described above may be optional. Various activities described with respect to the methods identified above can be executed in repetitive, serial, or parallel fashion.
It is to be understood that the foregoing description is intended to illustrate and not to limit the scope of the invention, which is defined by the scope of the following claims, and that other embodiments are within the scope of the claims.
The present application is a continuation of U.S. patent application Ser. No. 17/723,341, filed Apr. 18, 2022, which is a continuation of U.S. patent application Ser. No. 16/863,083, filed Apr. 30, 2020, titled “Interdigitated RF Filter,” now U.S. Pat. No. 11,316,491 issued Apr. 26, 2022, all of which are herein incorporated by reference in their entireties.
Number | Name | Date | Kind |
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5621364 | Ruile | Apr 1997 | A |
11316491 | Gaynor | Apr 2022 | B2 |
11722114 | Gaynor | Aug 2023 | B2 |
20060255884 | Tanaka | Nov 2006 | A1 |
20080238576 | Takahashi | Oct 2008 | A1 |
20090273408 | Inoue | Nov 2009 | A1 |
20220294412 | Gaynor | Sep 2022 | A1 |
Entry |
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1.98(d) Certification Statement + List. Date of Jul. 5, 2024. 1 page. |
U.S. Appl. No. 17/723,341, filed Apr. 18, 2022, US20220294412A1 Sep. 15, 2022, U.S. Pat. No. 11,722,114 Aug. 8, 2023, pSemi Corporation, Michael P. Gaynor. |
U.S. Appl. No. 16/863,083, filed Apr. 30, 2020, US20210344319A1 Nov. 4, 2021, U.S. Pat. No. 11,316,491 Apr. 26, 2022, pSemi Corporation, Michael P. Gaynor. |
Number | Date | Country | |
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20230396227 A1 | Dec 2023 | US |
Number | Date | Country | |
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Parent | 17723341 | Apr 2022 | US |
Child | 18339070 | US | |
Parent | 16863083 | Apr 2020 | US |
Child | 17723341 | US |