Number | Name | Date | Kind |
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4599118 | Han et al. | Jul 1986 | A |
5028549 | Chang et al. | Jul 1991 | A |
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F. Ren et al., “Implant isolation of GaAs-AlGaAs heterojunction bipolar transistor structures”, Applied Physics Letters, vol. 56, No. 9, pp. 860-862 (Feb. 26, 1990). |
Appl. Phys. Letters 56 (9), Feb. 26, 1990, “Implant Isolation of GaAs-AlGaAs Heterojunction Bipolar Transistor Structures”. |