The present disclosure pertains to systems and methods for producing ion beams, and the like. More particularly, the present disclosure pertains to ion sources and related techniques for producing ion beams and reducing turn on delay and/or turn on jitter of the ion sources.
A variety of approaches and systems have been developed for producing ion beams. Such approaches and systems may include an electrode that produces an electric field in response to receiving a voltage, where the electric field may interact with gas around the electrode to produce an ion beam. The developed approaches and systems for producing an ion beam may require a delay after initially receiving a voltage before the ion beam is produced due to a need for the electric field to initiate breakdown of the gas (e.g., a gas with neutral gas atoms) into charged ions. Of the known approaches and systems for producing an ion beam, each has certain advantages and disadvantages.
This disclosure is directed to several alternative designs for, devices of, and methods of using ion sources to produce ion beams. Although it is noted that approaches and systems for producing ion beams are known, there exists a need for improvement on those approaches and systems.
Accordingly, one illustrative instance of the disclosure may include an ion source for producing an ion beam. The ion source may include a housing having an opening and a first electrode within the housing. The first electrode may have a first side facing the opening of the housing and may provide an electric field toward the opening. The ion source may include a second electrode having an end within the housing. The second electrode may be configured to maintain a presence of electrons and/or seed plasma between the first electrode and the opening when the electric field is absent.
Another illustrative instance of the disclosure may include an ion source having a first magnetic pole, a second magnetic pole, a first electric field generator, and a second electric field generator. The first magnetic pole and the second magnetic pole may, at least partially, define an opening. The first electric field generator may be configured to provide a first electric field toward the opening and the second electric field generator may be configured to provide a second electric field between the first electric field generator and the opening.
Another illustrative instance of the disclosure may include a method of providing an ion beam. The method may include emitting electrons between an anode and an opening of a housing to provide a presence of electrons and/or seed plasma adjacent the anode, applying a power to the anode to generate an electric field while the presence of electrons and/or seed plasma adjacent the anode is provided, and discharging an electric discharge through the opening in the housing to produce an ion beam.
The above summary of some example embodiments is not intended to describe each disclosed embodiment or every implementation of the disclosure.
The disclosure may be more completely understood in consideration of the following detailed description of various embodiments in connection with the accompanying drawings, in which:
While the disclosure is amenable to various modifications and alternative forms, specifics thereof have been shown by way of example in the drawings and will be described in detail. It should be understood, however, that the intention is not to limit aspects of the claimed disclosure to the particular embodiments described. On the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the claimed disclosure.
For the following defined terms, these definitions shall be applied, unless a different definition is given in the claims or elsewhere in this specification.
All numeric values are herein assumed to be modified by the term “about”, whether or not explicitly indicated. The term “about” generally refers to a range of numbers that one of skill in the art would consider equivalent to the recited value (i.e., having the same function or result). In many instances, the term “about” may be indicative as including numbers that are rounded to the nearest significant figure.
The recitation of numerical ranges by endpoints includes all numbers within that range (e.g., 1 to 5 includes 1, 1.5, 2, 2.75, 3, 3.80, 4, and 5).
Although some suitable dimensions, ranges and/or values pertaining to various components, features and/or specifications are disclosed, one of skill in the art, incited by the present disclosure, would understand desired dimensions, ranges and/or values may deviate from those expressly disclosed.
As used in this specification and the appended claims, the singular forms “a”, “an”, and “the” include plural referents unless the content clearly dictates otherwise. As used in this specification and the appended claims, the term “or” is generally employed in its sense including “and/or” unless the content clearly dictates otherwise.
As used in this specification and the appended claims, terms such as first, second, third, and so on, along with top, bottom, side, left, right, above, below, and/or other similar relative terms and are used herein for descriptive purposes unless the content clearly dictates otherwise.
The following detailed description should be read with reference to the drawings in which similar elements in different drawings are numbered the same. The detailed description and the drawings, which are not necessarily to scale, depict illustrative embodiments and are not intended to limit the scope of the claimed disclosure. The illustrative embodiments depicted are intended only as exemplary. Selected features of any illustrative embodiment may be incorporated into an additional embodiment unless clearly stated to the contrary.
An ion source (e.g., an anode layer ion source, other Hall-current ion sources, and/or other types of ion sources), may produce ion beams. In some cases, the ion beam produced by an ion source may be an ion beam of plasma (e.g., a high temperature or other temperature ionized gas of positive ions and free electrons), which may be used for plasma processing, surface modification (e.g., smoothing, hardening, and/or other modifications of surfaces), film deposition, plasma thrusters, bomb detection, material analysis, and/or other industrial or research purpose.
An example ion source may include a magnetic system with an annular gap or opening between its poles and an electrode (e.g., an anode) housed within or adjacent to the gap or opening and connected to a positive terminal of a power supply. Free electrons may then drift above the electrode due to the electric field interacting with a magnetic field created in the gap between the poles of the magnetic system. As a result of collisions between the drifting electrons and neutral gas (e.g., ambient gas or gas from an active gaseous supply system), the atoms of the gas may become ionized. The charged gas ions and free electrons may then be accelerated due to the electric field created by the electrode.
The concepts disclosed herein are primarily described with respect to an anode layer ion source. Even so, the disclosed concepts may be used with other types of ion sources including, but not limited to, other types of Hall-current ion sources (extended channel Hall-current ion source, space-charge sheath Hall-current ion source, end-Hall Hall-current ion source, etc.)
The anode layer ion sources discussed herein may utilize a grid-less design (e.g., with no ion accelerating grids in an ion beam path) and a closed electron drift surface. With the closed electron drift surface, magnetic fields and electric fields of the anode layer ion source may interact and cause electrons to orbit above an electrode (e.g., an anode) such that the electrons collide with gas atoms to ionize the gas. Other anode layer ion sources may include an accelerating grid in an ion beam path produced by the ion source and/or may not include a closed electron drift surface.
An anode layer ion source may be differentiated from other closed drift ion sources by a spacing of a gap between poles of the magnetic system and a gap between the poles and an electrode. In anode layer ion sources, the gap between the poles and the gap between the poles and the electrode may be on the order of 2-3 millimeters (mm) or other size such that an electron confinement region (e.g., a region within the gaps) is too small for a conductive plasma to be sustained. Because the electron confinement region is too small for a conductive plasma to generate, the anode layer ion source may be operated in a collimated, high voltage mode. In one example, the electrode of the anode layer ion source may receive 1000s of volts and the ions may be efficiently emitted from the anode layer ion source. If the gaps are larger, a conductive plasma may be sustained in gap between the poles, which may cause electric fields to shift around the plasma and result in having to operate the anode layer ion source in a diffuse mode.
In industry, anode layer ion sources may be run at continuous duty cycles rather than with a pulsed output. As such and because anode layer ion sources may not utilize radio frequency (RF) or filament based ionization to provide a source plasma independent from an accelerating electric field from the electrode of the ion source, ion beam initiation may be delayed after application of a voltage to the electrode until the voltage on the electrode initiates a breakdown of the gas (e.g., a neutral gas) around the electrode into a plasma (e.g., free electrons and ionized gas atoms). Because of this delay, pulse characteristics of an anode layer ion source or other ion source may include a turn on delay (e.g., an average time between commanded and an actual start time of an ion pulse) and a turn on jitter (e.g., a variability in actual turn on time). The turn on delay may limit a maximum pulse frequency and turn on jitter may limit a pulse width. Typical turn on delay from an initial application of voltage to an electrode of an ion source until an ion beam current is produced may be on the order of about two (2) milliseconds (ms).
It has been found that the turn on delay may be reduced and the turn on jitter may be lowered by providing a seed plasma (e.g., a seed amount or initial amount of ionized gas) and/or electrons adjacent an electrode of an ion source (e.g., adjacent an anode of an anode layer ion source or other electrode of an ion source). A seed plasma may be an amount of ionized gas applied to an ion source before applying a voltage to an electrode (e.g., an anode) that facilitates speeding up the commutation of a plasma discharge (e.g., ion beam discharge), but does not cause a plasma arc to occur between the electrode of the ion source and an element providing the seed plasma. Electrons may be provided adjacent the electrode through field emission and/or one or more other techniques to facilitate speeding up the commutation of a plasma discharge without causing a plasma arc to occur between the electrode of the ion source an element providing the electrons. In some cases, as discussed in greater detail below, the addition of a seed plasma and/or electrons between the electrode of an ion source and a gap between magnetic poles may facilitate an ion source that has a turn on delay on the order of approximately 1 microsecond or less and a low turn on jitter. Such a short turn on delay and low turn on jitter may facilitate fast ion pulse generation. Additionally, as electrons may remain present around the electrode (e.g., above or between the electrode and the gap between magnetic poles), subsequent ion pulses after an initial ion pulse may have lower delay. Further, high ion beam current output on the order of 100s of milliamperes (mA) may be achieved.
Turning to the Figures,
In an anode layer ion source, the first electrode 14 may be an anode configured to provide a main electric field when in communication with a positive terminal of a power source. In other ion sources, the first electrode may be a different type of electrode configured to provide a main electric field for producing an ion beam.
The second electrode 16 may be connected to either a positive terminal or a negative terminal of the power source 18. The second electrode 16, when connected to a positive terminal of the power source 18, may be configured to provide an electric field that interacts with gas atoms to supply a seed plasma between the first electrode 14 and an opening (not shown in
The second electrode 16 may be considered a “keep-alive” electrode and may include one or more electrodes or field emission devices connected to a power source. For example, although the second electrode 16 may be referred to herein in the singular, the second electrode 16 may include two or more electrodes that perform the function of a keep-alive electrode (e.g., to facilitate providing a seed plasma and/or electrons) to speed up the production of charged ions when a voltage is applied to the first electrode 14 without creating a plasma arc with the first electrode 14. When the second electrode 16 includes two or more electrodes, the two or more electrodes may be adjacent one another and/or spaced from one another.
In operation, the second electrode 16 may receive a current from the power source 18 or other power source and output an electric field that interacts with ambient gas or other gas (e.g., through field emission, Paschen breakdown, etc.) to produce a seed plasma. The seed plasma may be provided at a location between the first electrode 14 and an opening (not shown) of the housing 12. The first electrode 14 may receive a power from the power source 18 or other power source and output an electric field that interacts with the seed plasma and atoms of gas around the first electrode 14 to produce plasma and an ion beam 20.
Although
The power source 18 may be a suitable type of power source and the ion source 10 may receive power from one or more types of power sources 18. Example types of power sources may include, but are not limited to, line power source, a battery, a capacitor, a generator, and/or one or more other types of power sources.
In some cases, the first pole 40 may be a first magnetic pole and the second pole 42 may be a second magnetic pole (e.g., where the first magnetic pole and/or the second magnetic pole may be coupled to a magnet, such as magnet 52 discussed below). A gap 46 may be located between the first pole 40 and the second pole 42 across which a magnetic field may be located.
The housing 36 and/or one or more of the first pole 40 and the second pole 42 may be made out of a suitable type of material. In one example, one or more of the housing 36, the first pole 40, and the second pole 42 may be made from a stainless steel (e.g., 410 stainless steel or other type of stainless steel) and/or other material.
The anode 32 and the keep-alive electrode 34 may be made from a suitable type of electrically conductive material. In some cases, one or both of the anode 32 and the keep-alive electrode 34 may be made from tungsten, molybdenum, and/or other material (e.g., other electrically conductive metal and/or polymer).
In some cases, the anode 32 may be positioned at a particular distance from the first pole 40 and/or the second pole 42 using one or more sets of spacing components (e.g., the configuration of
To facilitate creating a magnetic field (see
The magnet 52 may be a suitable type of magnet powerful enough to create a magnetic field across the gap 46 between the first pole 40 and the second pole 42 and discharge an ion beam in response to interacting with an electric field from the anode 32. The magnet 52 may be a high temperature magnet that is compatible with hydrogen, deuterium, and/or one or more other gases. Alternatively or in addition, the magnet 52 may have one or more additional or alternative properties. In one example anode layer ion source 30, the magnet 52 may be made from and/or may include samarium cobalt (SmCo).
As depicted in
One or more electronic components may be located between the anode 32 and the first power source 62. For example, as shown in
The first power source 62 may be a suitable type of power source configured to provide a desired amount of voltage to the anode 32. In some cases, the first power source 62 may be configured to provide a first voltage. The first voltage may be a suitable voltage, for example, a voltage between about five hundred (500) volts and about four (4) kilovolts (kV) or other suitable voltage. In one example, the first voltage may be on the order of about 2 kV of direct current (DC) or other amount of voltage.
The switch 66 may be configured to selectively provide power to the anode 32. For example, when the switch 66 is in an opened position, the circuit may be configured such that no power is provided from the first power source 62 to the anode 32. When the switch 66 is in a closed position, the circuit may be configured such that power is provided from the first power source 62 to the anode 32.
In the circuit example of
The switch 66 may be a high-speed switch, but this is not required. A high-speed switch may facilitate generating high-speed pulses of current. In some cases, the switch may be a non-high-speed switch when high-speed pulses of current may not be required and/or needed.
The first resistor 68 may be a suitable type of resistor providing a desired amount of resistance between the first power source 62 and the anode 32. In some cases, the first resistor 68 may be configured to have a first amount of resistance. The first amount of resistance may be a suitable amount of resistance, for example, an amount of resistance between about two hundred (200) ohms (Ω) and about two (2) kiloohms (kΩ) or other amount of resistance. In one example, the first resistance may be about 1 kΩ or other amount of resistance.
In one example configuration of the circuit, the first power source 62 may be configured to provide about 2 kV DC to the anode 32 and the first resistor 68 may be configured to provide a resistance of 1 kΩ. As a result, when the switch 66 is in a closed position and without taking into account a resistance of any plasma present adjacent the anode 32, the first resistor 68 may limit the current that the first power source 62 provides to the anode 32 to a current of less than about two (2) amperes (A). However, in operation and depending on a pressure of the gas around the anode 32, the first power source 62 may provide a charge to the anode 32 at a current on the order of about 500 mA.
One or more electronic components may be located between the keep-alive electrode 34 and the second power source 64. For example, as shown in
The second power source 64 may be a suitable type of power source configured to provide a desired amount of voltage. In some cases, the second power source 64 may be configured to provide a second voltage. The second voltage may be a suitable voltage, for example, a voltage between one (1) kV and about ten (10) kV. In one example, the second voltage may be on the order of about 6 kV of DC or other amount of voltage.
The second resistor 70 may be a suitable type of resistor providing a desired amount of resistance between the second power source 64 and the keep-alive electrode 34. In some cases, the second resistor 70 may be configured to have a second amount of resistance, which may be greater than the first amount of resistance of the first resistor 68.
A resistance for the circuit providing power to the keep-alive electrode 34 may be utilized to limit the current to the keep-alive electrode 34 for the purpose of controlling the seed plasma or field emission discharge current, preventing or mitigating a likelihood of a plasma arc between the keep-alive electrode 34 and the anode 32, and/or for one or more other purposes. In some cases, the second amount of resistance a suitable amount of resistance configured to limit the keep alive electrode current less than a few mA and in some examples less than one (1) mA. For example, a suitable amount of resistance may be between about one (1) megaohms (MΩ) and about 100 MΩ or other suitable amount of resistance. In one example, the second amount of resistance may be on the order of about ten (10) MΩ or other suitable amount of resistance.
In one example configuration of the circuit, the second power source 64 may be configured to provide about 6 kV DC to the keep-alive electrode 34 and the second resistor 70 may be configured to provide a resistance of about 10 MΩ. As a result, the second power source 64 may provide a charge to the keep-alive electrode 34 at a current on the order of less than about one mA (e.g., in some cases on the order of about six hundred (600) microamperes (μA)).
Once the seed plasma, SP, and/or electrons, e−, have been produced, a voltage may be applied to the anode 32 to create an electric field in the gap 73, as represented by arrows 76 in
In operation, when applying an initial ion pulse 88 to the anode layer ion source 30, a control signal (e.g., as represented by the line 82 in the graph 80) may be applied to the switch 66 and in response, the switch 66 may move to a closed position causing a voltage to be applied to the anode 32 (e.g., as represented by the line 84 in the graph 80). The voltage may be applied (e.g., rapidly applied) to the anode 32 and after a period of time, t, an ion beam may be initiated (e.g., as represented by the line 86 in the graph 80). During the period of time, t, electrons in the electric field created by the voltage applied to the anode 32 may interact with neutral gas atoms to produce a mixture of positively charged gas ions and free electrons (e.g., a plasma). The electric field caused by the voltage applied to the anode 32 may create an ion beam by accelerating or propelling the positively charged gas ions that form the ion beam.
As discussed above, typical ion sources (e.g., anode layer ion sources or other ion sources) without a keep-alive electrode may have a time period, t, between application of a voltage to an anode or other electrode and when an ion beam is formed (e.g., turn on delay) of about two (2) milliseconds (ms) during which time the electric field from the anode or other electrode interacts with neutral gas atoms around the anode or other electrode to create a plasma and eventually the ion beam. However, in an ion source (e.g., the anode layer ion source 30 or other ion source) with a keep-alive electrode (e.g., the keep-alive electrode 34 or other keep-alive electrode) that may provide a seed plasma and/or electron presence between the anode 30 and a gap between magnetic poles, may produce the ion beam after a delay of about one (1) microsecond or less with low turn on jitter. As a result, when a keep-alive electrode is present to provide a seed plasma and/or electron presence adjacent the anode, it is possible to achieve a shorter turn on delay than is otherwise achievable without the keep-alive electrode providing a seed plasma and/or electron presence.
Further, when providing a subsequent ion pulse 90 at a time period after the initial pulse, as shown in
Because of the short turn on delay and low jitter for producing an ion beam from ion sources having a keep-alive electrode to provide a seed plasma and/or electron presence as discussed herein, fast ion pulse generation may be possible due, at least in part, to electrons drifting above an anode of the ion sources. For example, the subsequent ion pulse 90 after the initial ion pulse 88 may be achieved within ten (10) microseconds or more from when the initial ion pulse was initiated as long as there are electrons drifting above the anode. Further, with the fast ion pulse generation, a high ion beam current may be achieved. In one example, an ion beam from an ion source having a keep-alive electrode to provide a seed plasma and/or electron presence adjacent to the anode may have a current in the 100s of mA or greater.
As discussed above, power may be provided to the keep-alive electrode 32 at a level of current that may be configured to prevent or mitigate a likelihood of arcing between the keep-alive electrode 34 and the anode 32. In some cases, the configurations of the keep-alive electrode 34 in
Those skilled in the art will recognize that the present disclosure may be manifested in a variety of forms other than the specific embodiments described and contemplated herein. Accordingly, departure in form and detail may be made without departing from the scope and spirit of the present disclosure as described in the appended claims.
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